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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6040/D

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for general±purpose amplifier and low±speed switching applications.

High DC Current Gain Ð

hFE = 2500 (Typ) @ IC = 4.0 Adc

Collector±Emitter Sustaining Voltage Ð @ 100 mAdc Ð

VCEO(sus) = 60 Vdc (Min) Ð 2N6040, 2N6043

VCEO(sus) = 80 Vdc (Min) Ð 2N6041, 2N6044

VCEO(sus) = 100 Vdc (Min) Ð 2N6042, 2N6045

Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc Ð 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc Ð 2N6042, 2N6045

Monolithic Construction with Built±In Base±Emitter Shunt Resistors

PNP

2N6040 thru

2N6042*

NPN

2N6043

thru 2N6045*

*Motorola Preferred Device

MAXIMUM RATINGS (1)

 

 

 

 

 

 

 

 

 

 

 

DARLINGTON

 

 

 

 

2N6040

 

 

2N6041

 

2N6042

 

 

Rating

Symbol

 

2N6043

 

 

2N6044

 

2N6045

Unit

 

8 AMPERE

 

 

 

 

 

 

 

 

 

 

 

 

COMPLEMENTARY

Collector±Emitter Voltage

VCEO

 

60

 

80

 

100

Vdc

 

 

 

 

SILICON

Collector±Base Voltage

VCB

 

60

 

80

 

100

Vdc

 

 

 

 

 

POWER TRANSISTORS

Emitter±Base Voltage

VEB

 

 

5.0

 

 

Vdc

 

 

 

 

 

 

60 ± 80 ± 100 VOLTS

Collector Current Ð Continuous

IC

 

 

8.0

 

 

Adc

 

 

 

 

 

75 WATTS

Peak

 

 

 

 

16

 

 

 

 

 

Base Current

IB

 

 

120

 

 

mAdc

 

 

Total Power Dissipation @ TC = 25_C

PD

 

 

75

 

 

Watts

 

 

Derate above 25_C

 

 

 

 

0.60

 

 

W/_C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Total Power Dissipation @ TA = 25_C

PD

 

 

2.2

 

 

Watts

 

 

Derate above 25_C

 

 

 

 

0.0175

 

 

W/_C

 

 

 

 

 

 

 

 

 

 

 

 

Operating and Storage Junction,

TJ, Tstg

 

 

± 65 to +150

_C

 

 

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Symbol

 

 

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

 

 

θJC

 

 

1.67

_C/W

 

 

Thermal Resistance, Junction to Ambient

 

 

θJA

 

 

 

57

_C/W

 

CASE 221A±06

(1) Indicates JEDEC Registered Data.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TO±220AB

 

 

 

 

 

 

 

 

 

 

 

 

 

TA

TC

 

 

 

 

 

 

 

 

 

4.0

80

 

 

 

 

 

 

 

 

(WATTS)

3.0

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

2.0

40

 

 

 

 

TC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, POWER

1.0

20

 

 

 

TA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

0

0

20

40

60

80

100

120

140

160

 

 

0

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

2N6040 thru 2N6042 2N6043 thru 2N6045

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

 

VCEO(sus)

 

 

Vdc

(IC = 100 mAdc, IB = 0)

2N6040, 2N6043

 

60

Ð

 

 

2N6041, 2N6044

 

80

Ð

 

 

2N6042, 2N6045

 

100

Ð

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICEO

 

 

μA

(VCE = 60 Vdc, IB = 0)

2N6040, 2N6043

 

Ð

20

 

(VCE = 80 Vdc, IB = 0)

2N6041, 2N6044

 

Ð

20

 

(VCE = 100 Vdc, IB = 0)

2N6042, 2N6045

 

Ð

20

 

Collector Cutoff Current

 

ICEX

 

 

μA

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

2N6040, 2N6043

 

Ð

20

 

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

2N6041, 2N6044

 

Ð

20

 

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)

2N6042, 2N6045

 

Ð

20

 

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

2N6040, 2N6043

 

Ð

200

 

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

2N6041, 2N6044

 

Ð

200

 

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

2N6042, 2N6045

 

Ð

200

 

Collector Cutoff Current

 

ICBO

 

 

μA

(VCB = 60 Vdc, IE = 0)

2N6040, 2N6043

 

Ð

20

 

(VCB = 80 Vdc, IE = 0)

2N6041, 2N6044

 

Ð

20

 

(VCB = 100 Vdc, IE = 0)

2N6042, 2N6045

 

Ð

20

 

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

 

IEBO

Ð

2.0

mAdc

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

Ð

(IC = 4.0 Adc, VCE = 4.0 Vdc)

2N6040, 41, 2N6043, 44

 

1000

20.000

 

(IC = 3.0 Adc, VCE = 4.0 Vdc)

2N6042, 2N6045

 

1000

20,000

 

(IC = 8.0 Adc, VCE = 4.0 Vdc)

All Types

 

100

Ð

 

Collector±Emitter Saturation Voltage

 

VCE(sat)

 

 

Vdc

(IC = 4.0 Adc, IB = 16 mAdc)

2N6040, 41, 2N6043, 44

 

Ð

2.0

 

(IC = 3.0 Adc, IB = 12 mAdc)

2N6042, 2N6045

 

Ð

2.0

 

(IC = 8.0 Adc, IB = 80 Adc)

All Types

 

Ð

4.0

 

Base±Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)

 

VBE(sat)

Ð

4.5

Vdc

Base±Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

 

VBE(on)

Ð

2.8

Vdc

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

|hfe|

4.0

Ð

 

Output Capacitance

2N6040/2N6042

Cob

Ð

300

pF

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

2N6043/2N6045

 

Ð

200

 

Small±Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

hfe

300

Ð

Ð

* Indicates JEDEC Registered Data.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC

 

 

± 30 V

 

 

D1 MUST BE FAST RECOVERY TYPE, eg:

 

 

 

 

1N5825 USED ABOVE IB 100 mA

RC

 

 

MSD6100 USED BELOW IB 100 mA

SCOPE

 

 

TUT

 

 

 

 

 

 

 

 

V2

 

 

R

 

 

approx

 

B

 

 

 

 

 

 

+ 8.0

V

 

 

 

 

 

0

51

D1

8.0 k

120

 

 

 

 

 

V1

 

 

 

 

 

 

+ 4.0 V

 

 

 

 

 

 

approx

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

±12 V

 

 

25

μs

for td and tr, D1 is disconnected

 

 

tr, tf 10 ns

 

 

and V2 = 0

 

 

For NPN test circuit reverse all polarities and D1.

DUTY CYCLE = 1.0%

 

 

 

 

 

 

 

 

 

 

 

Figure 2. Switching Times Equivalent Circuit

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0

 

 

ts

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

tf

 

 

 

 

μs)

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

 

 

 

t, TIME

0.5

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

tr

 

 

 

VCC = 30 V

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

I

/I

= 250

 

 

 

 

 

 

 

 

 

 

 

 

C B

 

 

 

 

 

 

 

 

 

 

 

0.1

IB1 = IB2

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

0.07

 

 

PNP

 

td @ VBE(off) = 0 V

 

 

 

 

 

0.05

 

 

NPN

 

 

 

 

 

 

 

 

 

 

 

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.1

 

IC, COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

 

 

 

2N6040

thru

2N6042

2N6043

thru

2N6045

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL RESISTANCE (NORMALIZED)

0.7

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

r(t), EFFECTIVE TRANSIENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

0.1

 

 

 

 

 

 

 

θJC(t) = r(t) θJC

 

 

P(pk)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.05

 

 

 

 

 

 

 

θJC = 1.67°C/W

 

 

 

 

 

 

 

 

0.07

 

 

 

 

 

 

 

D CURVES APPLY FOR POWER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

 

PULSE TRAIN SHOWN

 

t1

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

READ TIME AT t1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

0.03

 

0.01

 

 

 

 

 

 

TJ(pk) ± TC = P(pk) θJC(t)

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

DUTY CYCLE, D = t1/t2

 

 

SINGLE PULSE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

100

200

300

500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

 

20

 

 

 

 

 

 

 

 

100 μs

 

10

 

 

 

 

 

 

 

 

(AMP)

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

500 μs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

2.0

 

 

 

1.0 ms

 

dc

 

 

 

 

TJ = 150°C

 

5.0 ms

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

BONDING WIRE LIMITED

 

 

 

 

 

COLLECTOR

0.5

 

THERMALLY LIMITED @ TC = 25°C

 

 

 

 

 

(SINGLE PULSE)

 

 

 

 

 

 

0.2

 

SECOND BREAKDOWN LIMITED

 

 

 

 

0.1

CURVES APPLY BELOW RATED VCEO

 

 

 

 

,

 

 

 

 

 

 

2N6040, 2N6043

 

 

 

C

0.05

 

 

 

 

 

 

 

 

I

 

 

 

 

 

2N6041, 2N6044

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

2N6045

 

 

 

 

2.0

3.0

5.0

7.0

10

20

30

50

70

100

 

1.0

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

Figure 5. Active±Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

 

10,000

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

 

GAIN

 

5000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

3000

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

, SMALL±SIGNAL CURRENT

 

2000

 

 

 

 

 

 

 

 

C, CAPACITANCE (pF)

 

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

500

 

TC = 25°C

 

 

 

 

 

 

 

 

 

 

Cob

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

300

 

VCE = 4.0 Vdc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

IC = 3.0 Adc

 

 

 

 

 

 

 

 

 

Cib

 

 

 

 

 

 

100

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

PNP

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

fe

30

 

 

 

 

 

 

 

 

 

 

PNP

 

 

 

 

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

2.0

5.0

10

20

50

100

200

500

1000

30

0.2

0.5

1.0

2.0

5.0

10

20

50

100

 

 

1.0

0.1

f, FREQUENCY (kHz)

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Small±Signal Current Gain

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

3

2N6040

thru

2N6042

2N6043

thru

2N6045

 

 

 

 

 

 

 

 

PNP

 

 

 

 

 

 

 

 

 

 

2N6040, 2N6041, 2N6042

 

 

 

 

20,000

 

 

 

 

 

 

 

 

 

 

 

 

10,000

 

 

 

 

 

 

 

VCE = 4.0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

 

7000

 

 

 

 

 

 

 

 

 

 

 

 

5000

TJ = 150°C

 

 

 

 

 

 

 

 

 

, DC CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

3000

 

 

 

 

 

 

 

 

 

 

 

 

2000

 

25°C

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

 

FE

700

 

 

 

 

 

 

 

 

 

 

 

h

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

 

0.1

 

 

 

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

 

 

 

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

2N6043, 2N6044, 2N6045

 

 

 

 

20,000

 

 

 

 

 

 

 

 

 

 

 

10,000

 

 

 

 

 

 

 

VCE = 4.0 V

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

 

7000

 

 

 

 

 

 

 

 

 

 

 

5000

TJ = 150°C

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

3000

 

 

 

 

 

 

 

 

 

 

 

2000

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

FE

700

 

 

 

 

 

 

 

 

 

 

h

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

 

 

 

 

200

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

 

0.1

 

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

Figure 8. DC Current Gain

(VOLTS)

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

VOLTAGE

2.6

 

 

 

 

 

 

 

 

 

 

 

 

IC = 2.0 A

4.0 A

 

6.0 A

 

 

 

2.2

 

 

 

 

 

 

 

 

 

 

, COLLECTOR±EMITTER

 

 

 

 

 

 

 

 

 

 

1.8

 

 

 

 

 

 

 

 

 

 

1.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

1.0

 

 

 

 

 

 

 

 

 

 

V

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

 

0.3

 

 

 

 

 

IB, BASE CURRENT (mA)

 

 

 

(VOLTS)

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

VOLTAGE

2.6

 

 

 

 

 

 

 

 

 

 

 

IC = 2.0 A

 

4.0 A

 

6.0 A

 

 

 

 

2.2

 

 

 

 

 

 

 

 

 

 

, COLLECTOR±EMITTER

 

 

 

 

 

 

 

 

 

 

1.8

 

 

 

 

 

 

 

 

 

 

1.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

1.0

 

 

 

 

 

 

 

 

 

 

V

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

 

0.3

 

 

 

 

 

IB, BASE CURRENT (mA)

 

 

 

Figure 9. Collector Saturation Region

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

2.5

 

 

 

 

 

 

 

 

 

 

(VOLTS)

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V, VOLTAGE

1.5

VBE @ VCE = 4.0 V

 

 

 

 

 

 

 

 

VBE(sat) @ IC/IB = 250

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

VCE(sat) @ IC/IB = 250

 

 

 

 

 

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.1

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

2.5

 

 

 

 

 

 

 

 

 

 

(VOLTS)

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V, VOLTAGE

1.5

VBE(sat) @ IC/IB = 250

 

 

 

 

 

 

 

 

VBE @ VCE = 4.0 V

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE(sat) @ IC/IB = 250

 

 

 

 

 

 

 

 

0.5

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.1

IC, COLLECTOR CURRENT (AMP)

Figure 10. ªOnº Voltages

4

Motorola Bipolar Power Transistor Device Data

2N6040 thru 2N6042 2N6043 thru 2N6045

PACKAGE DIMENSIONS

 

 

 

 

±T±

 

B

 

F

C

 

 

 

T

S

4

 

 

 

 

Q

 

 

A

 

1

2

3

U

 

H

 

 

 

 

Z

 

 

K

 

 

 

 

 

L

 

 

 

R

V

 

 

 

J

G

 

 

 

 

 

 

 

D

 

 

N

 

 

 

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.570

0.620

14.48

15.75

B

0.380

0.405

9.66

10.28

C

0.160

0.190

4.07

4.82

D

0.025

0.035

0.64

0.88

F

0.142

0.147

3.61

3.73

G

0.095

0.105

2.42

2.66

H

0.110

0.155

2.80

3.93

J

0.018

0.025

0.46

0.64

K

0.500

0.562

12.70

14.27

L

0.045

0.060

1.15

1.52

N

0.190

0.210

4.83

5.33

Q

0.100

0.120

2.54

3.04

R

0.080

0.110

2.04

2.79

S

0.045

0.055

1.15

1.39

T

0.235

0.255

5.97

6.47

U

0.000

0.050

0.00

1.27

V

0.045

±±±

1.15

±±±

Z

±±±

0.080

±±±

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

5

2N6040 thru 2N6042 2N6043 thru 2N6045

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

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2N6040/D

*2N6040/D*

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