MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE15028/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use as high±frequency drivers in audio amplifiers.
•DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc
•Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 120 Vdc (Min) Ð MJE15028, MJE15029
VCEO(sus) = 150 Vdc (Min) Ð MJE15030, MJE15031
•High Current Gain Ð Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc
•TO±220AB Compact Package
MAXIMUM RATINGS
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MJE15028 |
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MJE15030 |
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Rating |
Symbol |
MJE15029 |
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MJE15031 |
Unit |
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Collector±Emitter Voltage |
VCEO |
120 |
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150 |
Vdc |
Collector±Base Voltage |
VCB |
120 |
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150 |
Vdc |
Emitter±Base Voltage |
VEB |
5.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
8.0 |
Adc |
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Ð Peak |
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16 |
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Base Current |
IB |
2.0 |
Adc |
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Total Power Dissipation @ TC = 25_C |
PD |
50 |
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Watts |
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Derate above 25_C |
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0.40 |
W/_C |
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Total Power Dissipation @ TA = 25_C |
PD |
2.0 |
Watts |
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Derate above 25_C |
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0.016 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
2.5 |
_C/W |
Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
NPN
MJE15028* MJE15030*
PNP
MJE15029* MJE15031*
*Motorola Preferred Device
8 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
120 ± 150 VOLTS
50 WATTS
CASE 221A±06
TO±220AB
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TA |
TC |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
2.0 |
40 |
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TC |
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POWER |
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1.0 |
20 |
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TA |
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, |
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D |
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P |
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0 |
0 |
20 |
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80 |
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140 |
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0 |
40 |
60 |
100 |
120 |
160 |
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
MJE15028 |
MJE15030 |
MJE15029 |
MJE15031 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 10 mAdc, IB = 0) |
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MJE15028, MJE15029 |
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120 |
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Ð |
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MJE15030, MJE15031 |
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150 |
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Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 120 Vdc, IB = 0) |
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MJE15028, MJE15029 |
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Ð |
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0.1 |
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(VCE = 150 Vdc, IB = 0) |
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MJE15030, MJE15031 |
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Ð |
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0.1 |
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Collector Cutoff Current |
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ICBO |
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μAdc |
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(VCB = 120 Vdc, IE = 0) |
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MJE15028, MJE15029 |
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Ð |
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10 |
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(VCB = 150 Vdc, IE = 0) |
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MJE15030, MJE15031 |
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Ð |
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10 |
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Emitter Cutoff Current |
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IEBO |
Ð |
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10 |
μAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 0.1 Adc, VCE = 2.0 Vdc) |
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40 |
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Ð |
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(IC = 2.0 Adc, VCE = 2.0 Vdc) |
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40 |
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Ð |
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(IC = 3.0 Adc, VCE = 2.0 Vdc) |
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40 |
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Ð |
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(IC = 4.0 Adc, VCE = 2.0 Vdc) |
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20 |
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Ð |
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DC Current Gain Linearity |
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hFE |
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Typ |
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(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) |
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2 |
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(NPN TO PNP) |
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3 |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
Ð |
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0.5 |
Vdc |
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(IC = 1.0 Adc, IB = 0.1 Adc) |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
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1.0 |
Vdc |
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(IC = 1.0 Adc, VCE = 2.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current Gain Ð Bandwidth Product (2) |
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fT |
30 |
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Ð |
MHz |
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(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) |
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(1) |
Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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(2) |
fT = hfe•ftest. |
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1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
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r(t), TRANSIENT THERMAL |
0.3 |
0.2 |
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0.2 |
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0.1 |
0.1 |
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P(pk) |
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0.05 |
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ZθJC(t) = r(t) RθJC |
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0.07 |
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° |
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0.05 |
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RθJC = 1.56 C/W MAX |
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0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.03 |
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READ TIME AT t1 |
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t2 |
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0.02 |
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0.01 |
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TJ(pk) ± TC = P(pk) ZθJC(t) |
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DUTY CYCLE, D = t1/t2 |
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SINGLE PULSE |
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0.01 |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
t, TIME (ms)
Figure 2. Thermal Response
2 |
Motorola Bipolar Power Transistor Device Data |
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20 |
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16 |
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100 μs |
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(AMP) |
10 |
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5 ms |
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CURRENT |
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dc |
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1.0 |
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, COLLECTOR |
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BONDING WIRE LIMITED |
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THERMALLY LIMITED |
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SECOND BREAKDOWN |
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0.1 |
LIMITED @ TC = 25°C |
MJE15028 |
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C |
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MJE15029 |
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I |
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MJE15030 |
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0.02 |
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MJE15031 |
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5.0 |
10 |
20 |
50 |
120 150 |
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2.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
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8.0 |
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(AMP) |
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CURRENT |
5.0 |
IC/IB = 10 |
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COLLECTOR |
2.0 |
TC = 25°C |
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5 V |
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3.0 |
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VBE(off) = 9 V |
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, |
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C |
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3 V |
I |
1.0 |
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1.5 V |
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0 |
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120 |
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140 |
0 V |
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0 |
100 |
110 |
130 |
150 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 4. Reverse±Bias Switching
Safe Operating Area
MJE15028 MJE15030 MJE15029 MJE15031
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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1000 |
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500 |
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Cib (NPN) |
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(pF) |
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Cib (PNP) |
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200 |
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CAPACITANCE |
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100 |
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Cob (PNP) |
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50 |
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C, |
30 |
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Cob (NPN) |
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20 |
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10 |
3.0 |
5.0 |
7.0 |
10 |
30 |
50 |
100 |
150 |
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1.5 |
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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100 |
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(MHz) |
100 |
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SIGNALSMALL, CURRENT GAIN |
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GAIN±BANDWIDTHPRODUCT |
90 |
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(PNP) |
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10 |
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20 |
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50 |
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(NPN) |
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30 |
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60 |
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20 |
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VCE = 10 V |
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PNP |
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50 |
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IC = 0.5 A |
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TC = 25°C |
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NPN |
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h |
5.0 |
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CURRENT, |
0 |
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fe |
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10 |
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0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
T |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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f |
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f, FREQUENCY (MHz) |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 6. Small±Signal Current Gain |
Figure 7. Current Gain±Bandwidth Product |
Motorola Bipolar Power Transistor Device Data |
3 |
MJE15028 |
MJE15030 |
MJE15029 |
MJE15031 |
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NPN Ð MJE15028 MJE15030 |
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1K |
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500 |
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VCE = 2.0 V |
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GAIN |
200 |
TJ = 150°C |
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CURRENT |
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150 |
TJ = 25°C |
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100 |
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70 |
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, DC |
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TJ = ± 55°C |
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50 |
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FE |
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h |
30 |
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20 |
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10 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
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0.1 |
10 |
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IC, COLLECTOR CURRENT (AMP) |
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PNP Ð MJE15029 MJE15031 |
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1K |
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500 |
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VCE = 2 V |
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GAIN |
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TJ = 150°C |
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200 |
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, DC CURRENT |
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100 |
TJ = 25°C |
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50 |
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TJ = ± 55°C |
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FE |
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h |
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20 |
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10 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 8. DC Current Gain
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NPN |
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TJ = 25°C |
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1.6 |
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(VOLTS) |
1.2 |
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V, VOLTAGE |
1.0 |
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VBE(sat) @ IC/IB = 10 |
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0.6 |
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VBE(on) @ VCE = 2.0 V |
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0.2 |
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VCE(sat) = IC/IB = 20 |
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IC/IB = 10 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (AMP) |
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PNP |
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1.8 |
TJ = 25°C |
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(VOLTS) |
1.4 |
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V, VOLTAGE |
1.0 |
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0.8 |
VBE(sat) @ IC/IB = 10 |
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VBE(on) @ VCE = 2.0 V |
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0.4 |
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VCE(sat) = IC/IB = 20 |
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IC/IB = 10 |
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0 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 9. ªOnº Voltage
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1.0 |
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VCC = 80 V |
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0.5 |
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IC/IB = 10 |
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TJ = 25°C |
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μs) |
0.2 |
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tr (PNP) |
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td (NPN, PNP) |
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( |
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t, TIME |
0.1 |
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0.05 |
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0.03 |
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tr (NPN) |
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0.02 |
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0.01 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 10. Turn±On Times
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10 |
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VCC = 80 V |
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5.0 |
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IC/IB = 10, IB1 = IB2 |
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3.0 |
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ts (NPN) TJ = 25°C |
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μs) |
2.0 |
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ts (PNP) |
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( |
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t, TIME |
1.0 |
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0.5 |
tf (PNP) |
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0.2 |
tf (NPN) |
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0.1 |
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0.1 |
0.2 |
0.3 |
0.5 |
2.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 11. Turn±Off Times
4 |
Motorola Bipolar Power Transistor Device Data |
MJE15028 MJE15030 MJE15029 MJE15031
PACKAGE DIMENSIONS
|
|
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|
±T± |
|
B |
|
F |
C |
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T |
S |
4 |
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Q |
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A |
|
1 |
2 |
3 |
U |
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H |
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Z |
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K |
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L |
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R |
V |
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J |
G |
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D |
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N |
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|
SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data |
5 |
MJE15028 MJE15030 MJE15029 MJE15031
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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