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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE5730/D

High Voltage PNP Silicon Power

Transistors

. . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.

300 V to 400 V (Min) Ð V CEO(sus)

1.0 A Rated Collector Current

Popular TO±220 Plastic Package

PNP Complements to the TIP47 thru TIP50 Series

MJE5730

MJE5731

MJE5731A

1.0 AMPERE

POWER TRANSISTORS

PNP SILICON

300 ± 350 ± 400 VOLTS

40 WATTS

CASE 221A±06

TO±220AB

MAXIMUM RATINGS

Rating

Symbol

MJE5730

MJE5731

MJE5731A

Unit

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

300

350

400

Vdc

Collector±Base Voltage

VCB

300

350

400

Vdc

Emitter±Base Voltage

VEB

 

5.0

 

Vdc

Collector Current Ð Continuous

IC

 

1.0

 

Adc

Peak

 

 

3.0

 

 

 

 

 

 

 

 

Base Current

IB

 

1.0

 

Adc

Total Power Dissipation

PD

 

 

 

 

@ TC = 25_C

 

 

40

 

Watts

Derate above 25_C

 

 

0.32

 

W/_C

 

 

 

 

 

 

Total Power Dissipation

PD

 

 

 

 

@ TA = 25_C

 

 

2.0

 

Watts

Derate above 25_C

 

 

0.016

 

W/_C

 

 

 

 

 

 

Unclamped Inducting Load Energy (See Figure 10)

E

 

20

 

mJ

 

 

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

 

± 65 to +150

 

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

3.125

_C/W

Thermal Resistance, Junction to Ambient

RθJA

62.5

_C/W

Motorola, Inc. 1995

MJE5730 MJE5731

MJE5731A

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

VCEO(sus)

 

 

Vdc

 

(IC = 30 mAdc, IB = 0)

MJE5730

 

300

Ð

 

 

 

MJE5731

 

350

Ð

 

 

 

MJE5732

 

400

Ð

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICEO

 

 

mAdc

 

 

 

 

 

(VCE = 200 Vdc, IB = 0)

MJE5730

 

Ð

1.0

 

 

(VCE = 250 Vdc, IB = 0)

MJE5731

 

Ð

1.0

 

 

(VCE = 300 Vdc, IB = 0)

MJE5732

 

Ð

1.0

 

 

Collector Cutoff Current

 

ICES

 

 

mAdc

 

(VCE = 300 Vdc, VBE = 0)

MJE5730

 

Ð

1.0

 

 

(VCE = 350 Vdc, VBE = 0)

MJE5731

 

Ð

1.0

 

 

(VCE = 400 Vdc, VBE = 0)

MJE5732

 

Ð

1.0

 

 

Emitter Cutoff Current

 

IEBO

Ð

1.0

mAdc

 

(VBE = 5.0 Vdc, IC = 0)

 

 

 

 

 

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

 

 

(IC = 0.3 Adc, VCE = 10 Vdc)

 

30

150

Ð

 

(IC = 1.0 Adc, VCE = 10 Vdc)

 

10

Ð

 

 

Collector±Emitter Saturation Voltage

VCE(sat)

Ð

1.0

Vdc

 

 

(IC = 1.0 Adc, IB = 0.2 Adc)

 

 

 

 

 

 

Base±Emitter On Voltage

 

VBE(on)

Ð

1.5

Vdc

 

(IC = 1.0 Adc, VCE = 10 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current Gain Ð Bandwidth Product

fT

10

Ð

MHz

 

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz)

 

 

 

 

 

Small±Signal Current Gain

 

hfe

25

Ð

Ð

 

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

 

 

 

 

 

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

200

 

 

 

 

 

 

 

(VOLTS)

1.4

 

 

 

 

 

 

 

 

 

 

 

100

 

= 150°C

 

 

 

VCE

= 10 V

1.2

 

 

 

 

 

 

 

 

 

 

 

TJ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

 

 

 

CURRENT GAIN

50

 

25°C

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

30

 

± 55°C

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

COLLECTOR±EMITTER

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C

 

 

FE

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

150°C

h

5.0

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

@ I

/I

= 5.0

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

,

 

CE(sat))

 

C B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

0.05

0.1

0.2

0.3

0.5

1.0

V

0.03

0.05

 

0.1

0.2

0.3

0.5

1.0

2.0

 

0.02 0.03

2.0

0.02

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 1. DC Current Gain

Figure 2. Collector±Emitter Saturation Voltage

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

 

 

 

MJE5730

MJE5731

MJE5731A

 

1.4

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

1.2

 

 

 

 

 

 

 

 

 

 

 

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

0.8

 

 

DERATING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(V)VOLTAGEV,

1.0

 

 

 

TJ = ± 55°C

 

 

FACTORDERATING

 

 

 

 

 

 

 

 

VBE(sat) @ IC/IB = 5.0

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

THERMAL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

150°C

 

 

 

0.4

 

DERATING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.05

0.1

0.2

0.3

0.5

1.0

2.0

 

0

25

50

75

100

125

150

175

 

0.02 0.03

 

0

 

 

I

, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 3. Base±Emitter Voltage

Figure 4. Normalized Power Derating

 

10

 

 

 

 

 

 

 

 

(AMP)

5.0

 

 

 

 

 

 

 

 

2.0

 

 

1.0 ms

 

100 μs

 

CURRENT

 

 

 

 

 

 

 

1.0

TC = 25°C

 

dc

 

500 μs

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR

0.2

 

 

 

 

 

 

 

 

0.1

 

BONDING WIRE LIMIT

 

 

 

 

0.05

 

THERMAL LIMIT

 

 

 

 

 

,

 

 

SECOND BREAKDOWN LIMIT

 

 

 

 

C

 

 

MJE5730

 

 

I

0.02

 

 

 

 

 

 

 

 

 

 

 

MJE5731

 

 

 

0.01

 

 

 

 

MJE5732

 

 

 

 

 

30

 

100

 

 

 

 

5.0

10

20

50

200

300

500

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Forward Bias Safe Operating Area

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RESISTANCE (NORMALIZED)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

r(t), TRANSIENT THERMAL

0.3

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.1

 

 

 

 

 

 

 

 

 

P(pk)

 

 

 

0.05

 

 

 

 

 

RθJC(t) = r(t) RθJC

 

 

 

 

 

0.07

 

 

 

 

 

 

RθJC = 3.125°C/W MAX

 

 

 

 

 

0.05

0.02

 

 

 

 

 

D CURVES APPLY FOR POWER

 

 

 

 

 

0.03

 

 

 

 

 

 

PULSE TRAIN SHOWN

 

t1

 

 

 

 

0.01

 

 

 

 

READ TIME AT t1

 

 

t2

 

 

 

 

0.02

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ(pk) ± TC = P(pk) θJC(t)

 

 

 

 

 

 

 

SINGLE PULSE

 

 

 

 

 

 

DUTY CYCLE, D = t1/t2

 

 

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.02

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1 k

t, TIME (ms)

Figure 6. Thermal Response

Motorola Bipolar Power Transistor Device Data

3

MJE5730 MJE5731 MJE5731A

 

 

TURN±ON PULSE

 

 

 

t1

 

 

 

VBE(off)

 

 

 

Vin

0 V

VCC

 

 

 

RC

 

 

 

APPROX

t1 7.0 ns

 

SCOPE

.

100 t2 < 500 μs

 

RB

±11 V

 

t3 < 15 ns

Vin

 

 

 

t2

t3

 

 

 

 

51

Cjd << Ceb

 

APPROX. +9.0 V

 

+ 4.0 V

 

 

 

 

DUTY CYCLE 2.0%

 

 

TURN±OFF PULSE

Figure 7. Switching Time Equivalent Circuit

 

1.0

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

°

 

 

3.0

 

t

 

 

 

 

 

 

0.5

 

tr

 

 

 

TJ = 25 C

 

 

 

 

s

 

 

 

 

VCC = 200 V

 

 

 

 

 

 

VCC

= 200 V

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC/IB = 5.0

 

 

0.3

 

 

 

 

 

IC/IB = 5.0

 

 

 

 

tf

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

td

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

μs)

 

 

 

 

 

 

 

μs)

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

TIMEt,

0.1

 

 

 

 

 

 

 

 

TIMEt,

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.03

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

 

0.02

0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 8. Turn±On Resistive Switching Times

Figure 9. Resistive Turn±Off Switching Times

Test Circuit

Voltage and Current Waveforms

 

 

 

 

 

 

 

 

 

 

 

 

tw 3 ms

 

 

 

 

 

 

VCE MONITOR

0 V

 

 

 

(SEE NOTE 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INPUT

 

 

 

 

 

 

 

MJE171

RBB1 =

 

TUT

 

100 mH

VOLTAGE

± 5 V

150

Ω

 

 

 

 

50

 

 

 

 

+

VCC = 20 V

 

100 ms

INPUT

 

 

 

 

±

0.63 A

50

RBB2

=

 

 

IC MONITOR

COLLECTOR

 

 

 

 

CURRENT

0 V

 

100 Ω

VBB2 =

RS =

 

VCER

 

+

 

 

VBB1 = 10 V

±

 

0

0.1

Ω

 

COLLECTOR

 

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10 V

 

 

 

 

 

 

 

VCE(sat)

Figure 10. Inductive Load Switching

4

Motorola Bipolar Power Transistor Device Data

MJE5730 MJE5731 MJE5731A

PACKAGE DIMENSIONS

 

 

 

 

±T±

 

B

 

F

C

 

 

 

T

S

4

 

 

 

 

Q

 

 

A

 

1

2

3

U

 

H

 

 

 

 

Z

 

 

K

 

 

 

 

 

L

 

 

 

R

V

 

 

 

J

G

 

 

 

 

 

 

 

D

 

 

N

 

 

 

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.570

0.620

14.48

15.75

B

0.380

0.405

9.66

10.28

C

0.160

0.190

4.07

4.82

D

0.025

0.035

0.64

0.88

F

0.142

0.147

3.61

3.73

G

0.095

0.105

2.42

2.66

H

0.110

0.155

2.80

3.93

J

0.018

0.025

0.46

0.64

K

0.500

0.562

12.70

14.27

L

0.045

0.060

1.15

1.52

N

0.190

0.210

4.83

5.33

Q

0.100

0.120

2.54

3.04

R

0.080

0.110

2.04

2.79

S

0.045

0.055

1.15

1.39

T

0.235

0.255

5.97

6.47

U

0.000

0.050

0.00

1.27

V

0.045

±±±

1.15

±±±

Z

±±±

0.080

±±±

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

5

MJE5730 MJE5731 MJE5731A

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

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INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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