Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

MJE18204

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

495.95 Кб

Скачать

☆

1 / 21 2 > Следующая >>>

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE18204/D

Designer's Data Sheet

SWITCHMODE NPN Bipolar

Power Transistor for Electronic Light Ballast and Switching Power Supply Applications

The MJE/MJF18204 have an application specific state±of±the±art die dedicated to the electronic ballast (ªlight ballastº) and power supply applications.

•Improved Global Efficiency Due to Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

ÐNo Coil Required in Base Circuit for Fast Turn±Off (No Current Tail)

•Full Characterization at 125_C

•Motorola ª6 SIGMAº Philosophy Provides Tight and Reproducible Parametric Distributions

•Two Package Choices: Standard TO±220 or Isolated TO±220

MAXIMUM RATINGS

Rating		Symbol	MJE18204	MJF18204	Unit

Collector±Emitter Voltage		VCEO	600		Vdc
Collector±Base Voltage		VCBO	1200		Vdc
Collector±Emitter Voltage		VCES	1200		Vdc
Emitter±Base Voltage		VEBO	10		Vdc
Collector Current Ð Continuous		IC	5		Adc
Ð Peak (1)		ICM	10
Base Current Ð Continuous		IB	2		Adc
Ð Peak (1)		IBM	4
RMS Isolation Voltage (2)	Per Figure 22	VISOL1		4500	Volts
(for 1 sec, R.H. ≤ 30%)	Per Figure 23	VISOL2		3500
TC = 25°C	Per Figure 24	VISOL3		1500
*Total Device Dissipation @ TC = 25°C		PD	75	35	Watt
*Derate above 25_C			0.6	0.28	W/_C

Operating and Storage Temperature		TJ, Tstg	± 65 to 150		_C
THERMAL CHARACTERISTICS

Rating		Symbol	MJE18204	MJF18204	Unit

Thermal Resistance Ð Junction to Case		RqJC	1.65	3.55	_C/W
Ð Junction to Ambient		RqJA	62.5	62.5
Maximum Lead Temperature for Soldering		TL	260		_C
Purposes: 1/8″ from Case for 5 Seconds

(1)Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

(2)Proper strike and creepage distance must be provided.

MJE18204

MJF18204

POWER TRANSISTORS

5 AMPERES

1200 VOLTS

35 and 75 WATTS

CASE 221A±06

TO±220AB

CASE 221D±02

TO±220 FULLPACK

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

MJE18204

MJF18204

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Voltage

VCEO

600

660

Vdc

(IC = 1 mA, IB = 0)

Collector±Emitter Sustaining Voltage

Vdc

(IC = 100 mA, L = 25 mH)

VCEO(sus)

550

630

(IC = 200 mA, L = 25 mH, R = 2 Ω)

VCER(sus)

600

700

Collector±Base Breakdown Voltage

VCBO

1200

1300

Vdc

(ICBO = 1 mA, IE = 0)

Emitter±Base Breakdown Voltage

VEBO

12.9

Vdc

(IEBO = 1 mA, IC = 0)

Collector Cutoff Current (VCE = 600 V, IB = 0)

@ TC = 25°C

ICEO

200

μAdc

Collector Cutoff Current (VCE = 550 V, IB = 0)

@ TC = 125°C

2000

Collector Cutoff Current (VCE = Rated VCES, VBE = 0)

@ TC = 25°C

ICES

100

μAdc

@ TC = 125°C

500

Collector Cutoff Current (VCE = 1000 V, VBE = 0)

@ TC = 125°C

100

Collector Cutoff Current

ICBO

100

μAdc

(VCB = Rated VCB, IE = 0)

Emitter±Cutoff Current

IEBO

100

μAdc

(VEB = 10 Vdc, IC = 0)

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 1 Adc, IB = 0.1 Adc)

0.83

1.1

(IC = 2 Adc, IB = 0.4 Adc)

0.92

1.25

Collector±Emitter Saturation Voltage

@ TC = 25°C

VCE(sat)

Vdc

(IC = 1 Adc, IB = 0.1 Adc)

0.3

@ TC = 125°C

0.7

1.25

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C

0.3

0.6

@ TC = 125°C

0.8

1.25

DC Current Gain

@ TC = 25°C

hFE

(IC = 0.5 Adc, VCE = 3 Vdc)

@ TC = 125°C

(IC = 1 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

(IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

(IC = 5 mAdc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

200

Input Capacitance (VEB = 8 Vdc)

Cib

2000

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

IC = 2 Adc

@ 3 μs

@ TC = 25°C

VCE(dsat)

2.5

IB1 = 660 mAdc

Voltage:

@ TC = 125°C

7.5

VCC = 300 V

Determined 1 s and

3 μs respectively after

IC = 2 Adc

@ 3 μs

@ TC = 25°C

rising IB1 reaches

IB1 = 0.4 Adc

90% of final I

VCC = 300 V

@ TC = 125 C

2	Motorola Bipolar Power Transistor Device Data

					MJE18204		MJF18204
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max		Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs)

Turn±on Time	IC = 2 Adc, IB1 = 0.4 Adc	@ TC = 25°C	ton		105	175		ns
	IB2 = 1 Adc
Turn±off Time	IB2 = 1 Adc	@ TC = 25°C	toff		1.75	2.5		μs
Turn±off Time	VCC = 300 Vdc	@ TC = 25°C	toff		1.75	2.5		μs
Turn±on Time	IC = 2 Adc, IB1 = 0.4 Adc	@ TC = 25°C	ton		95	200		ns
	IB2 = 0.4 Adc
Turn±off Time	IB2 = 0.4 Adc	@ TC = 25°C	toff		3.5	4.5		μs
Turn±off Time	VCC = 300 Vdc	@ TC = 25°C	toff		3.5	4.5		μs
Turn±on Time	IC = 0.7 Adc, IB1 = 50 mAdc	@ TC = 25°C	td		70	150		ns
	IC = 0.7 Adc, IB1 = 50 mAdc	@ TC = 25°C	tr		210	400		ns
	IB2 = 0.4 Adc		tr		210	400		ns
Turn±off Time	VCC = 125 Vdc		t		0.9	1.2		μs
	PW = 70 μs	@ TC = 25°C	s
	PW = 70 μs	@ TC = 25°C	tf		275	450		ns
			tf		275	450		ns
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)
Fall Time		@ TC = 25°C	tf		110	175		ns
	IC = 1 Adc	@ TC = 125°C			95
Storage Time	IC = 1 Adc	@ TC = 25°C	ts		1.35	2		μs
Storage Time	IB1 = 0.1 Adc	@ TC = 25°C	ts		1.35	2		μs
	IB1 = 0.1 Adc	@ TC = 125°C			1.9
	IB2 = 0.5 Adc	@ TC = 125°C			1.9
Crossover Time		@ TC = 25°C	tc		150	250		ns
		@ TC = 125°C			115
Fall Time		@ TC = 25°C	tf		120	200		ns
	IC = 2 Adc	@ TC = 125°C			180
Storage Time	IC = 2 Adc	@ TC = 25°C	ts		1.9	2.75		μs
Storage Time	IB1 = 0.4 Adc	@ TC = 25°C	ts		1.9	2.75		μs
	IB1 = 0.4 Adc	@ TC = 125°C			2.35
	IB2 = 1 Adc	@ TC = 125°C			2.35
Crossover Time		@ TC = 25°C	tc		190	300		ns
		@ TC = 125°C			180
Fall Time	IC = 2 Adc	@ TC = 25°C	tf		185	300		ns
Storage Time	IC = 2 Adc	@ TC = 25°C	ts		4	5		μs
Storage Time	IB1 = 0.4 Adc	@ TC = 25°C	ts		4	5		μs
Crossover Time	IB2 = 0.4 Adc	@ TC = 25°C	tc		350	500		ns
Crossover Time		@ TC = 25°C	tc		350	500		ns

Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL STATIC CHARACTERISTICS

	100
		TJ = 125°C	TJ = 25°C		VCE = 1 V
		TJ = 125°C	TJ = 25°C
GAIN
, DC CURRENT	10	TJ = ± 20°C
, DC CURRENT
FE
h
	1
	0.01		0.1	1	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	100
		TJ = 125°C			VCE = 5 V
		TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
, DC CURRENT
FE
h
	1
	0.01		0.1	1	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volts

	10
,VOLTAGE (VOLTS)			IC/IB = 10
	1	IC/IB = 5
		IC/IB = 5
	0.1
CE	0.1
CE
V				TJ = 125°C
				TJ = 125°C
				TJ = 25°C
	0.01
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
		TJ = 125°C	TJ = 25°C	VCE = 3 V
		TJ = 125°C	TJ = 25°C
GAIN
, DC CURRENT	10	TJ = ± 20°C
, DC CURRENT
FE
h
	1
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volts

	2
(VOLTS)				TJ = 25°C
(VOLTS)			4 A
			4 A
VOLTAGE			3 A
VOLTAGE	1	1.5 A	2 A
	1		2 A
,
CE
V		IC = 1 A
		IC = 1 A
	0
	10	100	1000	10000

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

	1.5
(VOLTS)	1
(VOLTS)	TJ = ± 20°C
VOLTAGE	TJ = ± 20°C
VOLTAGE	T	J	= 25°C
,	0.5	J
BE	0.5
BE
V	TJ = 125°C
	TJ = 125°C				IC/IB = 5
					IC/IB = 10
	0
	0.01		0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base±Emitter Saturation Region

4	Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL STATIC CHARACTERISTICS

	10000			1600
		TJ = 25°C		1400
		f(test) = 1 MHz		1200
(pF)				1200
(pF)	1000	Cib (pF)		1000
CAPACITANCE		Cib (pF)	t, TIME (ns)

				800
	100	Cob (pF)		600
C,	100
C,				400
				400
				200
	10	10	100	0
	1	10	100

	IC/IB = 10
	IC/IB = 5
								TJ =	125°C
								TJ =	25°C
							IB1	= IB2
							VCC = 300 V
							PW = 20		μs
0.5	1	1.5	2	2.5	3	3.5	4	4.5		5

VR, REVERSE VOLTAGE (VOLTS)	IC, COLLECTOR CURRENT (AMPS)
Figure 7. Capacitance	Figure 8. Resistive Switching, ton

	8			TJ = 125°C
				TJ = 125°C				IB1 = IB2
	7			TJ = 25°C				VCC = 300 V
								PW = 20 μs
	6				IC/IB = 5
μs)	5
(	5
TIME	4
t,	4
t,
	3
	2	IC/IB = 10
	2
	1
	0.5	1	1.5	2	2.5	3	3.5	4	4.5	5

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Resistive Switching, toff

	6					IB1 = IB2
						IB1 = IB2
				IC = 1 A		VCC = 15 V
				IC = 1 A		VZ = 300 V
s)						VZ = 300 V
s)						LC = 200 μH
(μ	5					LC = 200 μH
, STORAGE TIME	5
, STORAGE TIME	4
si
t
		IC = 2 A			TJ = 125°C
		IC = 2 A			TJ = 25	°
	3				TJ = 25	C
	3	5			11
	3	5	7	9	11	13	15

hFE, FORCED GAIN

	6				TJ = 125°C
					TJ = 125°C	IB1 = IB2
					TJ = 25°C	VCC = 15 V
	5					VZ = 300 V
						LC = 200 μH
(ns)
t, TIME	4
t, TIME
	3	IC/IB = 5
	3
	2			IC/IB = 10
	2			2	2.5	3
	0.5	1	1.5	2	2.5	3	3.5
			IC, COLLECTOR CURRENT (AMPS)

Figure 10. Inductive Storage Time, tsi

1500			TJ = 125°C
I	= I		TJ = 125°C
B1		B2	TJ = 25°C
V		= 15 V	TJ = 25°C
CC
VZ	= 300 V		tc
LC = 200 μH			tc
1000
TIME (ns)			tfi
t,				tc
500				tc
500
				tfi
0
0		1	2	3
		IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Storage Time, tsi (hFE)	Figure 12. Inductive Switching,
	tc & tfi @ IC/IB = 5

Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL STATIC CHARACTERISTICS

	1100	IBoff = IB2	TJ = 125°C
	1000	IBoff = IB2	TJ = 125°C
	1000	VCC = 15 V	TJ = 25°C
	900	VCC = 15 V	TJ = 25°C
	900	VZ = 300 V
	800	LC = 200 μH			tc
(ns)	700				tc
	700

t, TIME	600
t, TIME	500
	400
	300				tfi
	200				tfi
	200
	100	1
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Switching,

					tc & tfi @ IC/IB = 10
	1200			TJ = 125°C
				TJ = 125°C							I	= I		B2
				TJ = 25°C							B1			B2
				TJ = 25°C							V		= 15 V
	1000										CC
(ns)	1000										VZ	= 300 V
											VZ	= 300 V
											LC	= 200 μH
TIME								IC = 2 A			LC	= 200 μH
TIME	800							IC = 2 A
, CROSSOVER	800
	600

c
t	400							IC = 1 A
	400							IC = 1 A
	200
	3	4	5	6	7	8	9	10	11	12	13			14	15

hFE, FORCED GAIN

Figure 15. Inductive Crossover Time

	100
(AMPS)	10		1 μs
COLLECTOR CURRENT			10 μs	EXTENDED SOA
		5 ms	1 ms
		5 ms
	1
		MJE18204±DC
	0.1

,
C		MJF18204±DC
I

	0.01		100
	10		100	1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 17. Forward Bias Safe Operating Area

	680
	IBoff = IB2						TJ = 125°C
	V	CC	= 15 V				TJ = 25	°
		CC					TJ = 25	C
	VZ = 300 V
TIME (ns)	LC = 200 μH					IC = 2 A
	480
		IC = 1 A
, FALL		IC = 1 A
, FALL	280
fi
t
	80		5			11	13
	3		5	7	9	11	13	15

hFE, FORCED GAIN

Figure 14. Inductive Fall Time

	1400		TJ = 25°C
	1300		TJ = 25°C
	1300
	1200	BVCER (VOLTS) @ 10 mA
(VOLTS)	1100
(VOLTS)	1000
BVCER	1000
	900

	800
	700	BVCER(sus) @ 200 mA
	700
	600
	10	100	1000
		RBE (Ω)

Figure 16. BVCER = f (RBE)

	6
(AMPS)	5						TC ≤ 125°C
	5						GAIN ≥ 5
							LC = 4 mH
CURRENT	4
CURRENT	3
, COLLECTOR	3
	2
							± 5 V
	1
C					±1.5 V
I

	0		0 V
	0		600
	400	500	600	700	800	900	1000	1100	1200
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 18. Reverse Bias Switching Safe

Operating Area

6	Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL STATIC CHARACTERISTICS

	1.0
							SECOND
FACTOR	0.8						BREAKDOWN
							DERATING
	0.6
DERATING	0.6
DERATING	0.4
POWER	0.2				THERMAL
	0.2				DERATING
					DERATING
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 19. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 19 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figures 21 and 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base±to±emitter junction reverse biased. The safe level is specified as a reverse±biased safe operating area (Figure 17). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

TYPICAL SWITCHING CHARACTERISTICS

(IB1 = IB2 FOR ALL CURVES)

VCE	dyn 1 μs
	dyn 1 μs
		dyn 3 μs
0 V
90% IB
1	μs
IB	3	μs
	3	μs
		TIME

Figure 20. Dynamic Saturation

Voltage Measurements

10
9	IC					90% IC
8			tsi			tfi
7			tsi
7
6							10% IC
5	Vclamp		10% Vclamp			tc	10% IC
4						tc
4
3	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 21. Inductive Switching Measurements

Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL SWITCHING CHARACTERISTICS

(IB1 = IB2 FOR ALL CURVES)

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 μF		100	Ω		MTP8P10	100 μF
1 μF	150 Ω				MTP8P10

		3 W
	3 W	3 W
	3 W
						MTP8P10
MPF930					MUR105	RB1
					MUR105	Iout
+10 V	MPF930					Iout
						A
50 Ω					MJE210	RB2
						RB2

COMMON				150 Ω		MTP12N10
						MTP12N10
	μ
	μ	F		3 W
	500	F
						1 μF

±Voff

		IC PEAK
	VCE PEAK
VCE
	IB1
IB
	IB2
V(BR)CEO(sus)	Inductive Switching	RBSOA
L = 10 mH	L = 200 μH	L = 500 μH
RB2 = ∞	RB2 = 0	RB2 = 0
VCC = 20 Volts	VCC = 15 Volts	VCC = 15 Volts
IC(pk) = 100 mA	RB1 selected for desired IB1	RB1 selected for desired IB1

8	Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL THERMAL RESPONSE (IB1 = IB2 FOR ALL CURVES)

		1
TRANSIENT THERMAL RESISTANCE			D = 0.5
	(NORMALIZED)		0.2
			0.1			P(pk)	RθJC(t) = r(t) RθJC
		0.1				P(pk)	RθJC(t) = r(t) RθJC
		0.1	0.05				RθJC = 1.65°C/W MAX
			0.02				D CURVES APPLY FOR POWER
			0.02				PULSE TRAIN SHOWN
						t1	PULSE TRAIN SHOWN
						t1	READ TIME AT t1
						t2	TJ(pk) ± TC = P(pk) RθJC(t)
			SINGLE PULSE			DUTY CYCLE, D = t1/t2	TJ(pk) ± TC = P(pk) RθJC(t)
r(t),			SINGLE PULSE			DUTY CYCLE, D = t1/t2
		0.01
		0.01		0.1	1	10	100	1000

t, TIME (ms)

Figure 22. Typical Thermal Response (ZθJC(t)) for MJE18204

		1
TRANSIENT THERMAL RESISTANCE		D = 0.5
	(NORMALIZED)	0.2				P(pk)		RθJC(t) = r(t) RθJC
		0.1				P(pk)		RθJC(t) = r(t) RθJC
		0.1						°
		0.1						RθJC = 3.55 C/W MAX
		0.1						D CURVES APPLY FOR POWER
		0.05				t1		PULSE TRAIN SHOWN
		0.05				t1	t2	READ TIME AT t1
							t2	TJ(pk) ± TC = P(pk) RθJC(t)
		0.02				DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) RθJC(t)
r(t),		0.02				DUTY CYCLE, D = t1/t2
r(t),		SINGLE PULSE
		SINGLE PULSE
		0.01
		0.01	0.1	1	10	100	1000	10000	100000

t, TIME (ms)

Figure 23. Typical Thermal Response (ZθJC(t)) for MJF18204

Motorola Bipolar Power Transistor Device Data

MJE18204		MJF18204
			TEST CONDITIONS FOR ISOLATION TESTS*

		MOUNTED		MOUNTED		MOUNTED
	CLIP	FULLY ISOLATED	CLIP	FULLY ISOLATED	0.107″ MIN	FULLY ISOLATED	0.107″ MIN
	CLIP	PACKAGE	CLIP	PACKAGE		PACKAGE
		PACKAGE		PACKAGE		PACKAGE

LEADS	LEADS
HEATSINK	HEATSINK
0.110″ MIN

LEADS

HEATSINK

Figure 24. Screw or Clip Mounting Position for Isolation Test Number 1

Figure 25. Clip Mounting Position

for Isolation Test Number 2

Figure 26. Screw Mounting Position

for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**

4±40 SCREW

CLIP

PLAIN WASHER

HEATSINK
COMPRESSION WASHER
NUT	HEATSINK
NUT
Figure 27a. Screw±Mounted	Figure 27b. Clip±Mounted

Figure 27. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4±40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4±40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.

** For more information about mounting power semiconductors see Application Note AN1040.

10	Motorola Bipolar Power Transistor Device Data

1 / 21 2 > Следующая >>>

Соседние файлы в папке Bipolar

#
06.01.2022425.02 Кб2MJE18006.PDF
#
06.01.2022431.83 Кб2MJE18008.PDF
#
06.01.2022443.78 Кб2MJE18009.PDF
#
06.01.2022156.34 Кб2mje1802d.pdf
#
06.01.2022477.78 Кб2mje1804d.pdf
#
06.01.2022495.95 Кб2MJE18204.PDF
#
06.01.2022516.68 Кб2MJE18206.PDF
#
06.01.2022222.46 Кб2MJE18604.PDF
#
06.01.2022156.34 Кб2MJE18_2D.PDF
#
06.01.2022477.78 Кб2MJE18_4D.PDF
#
06.01.2022261.87 Кб2MJE200RE.PDF