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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6576/D

NPN Silicon Power Darlington

Transistors

General±purpose EpiBase power Darlington transistors, suitable for linear and switching applications.

Replacement for 2N3055 and Driver

High Gain Darlington Performance

Built±in Diode Protection for Reverse Polarity Protection

Can Be Driven from Low±Level Logic

Popular Voltage Range

Operating Range Ð ±65 to +200 _C

MAXIMUM RATINGS (1)

Rating

Symbol

2N6576

 

2N6577

 

2N6578

Unit

 

 

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO(sus)

60

 

90

 

120

Vdc

Collector±Base Voltage

VCB

60

 

90

 

120

Vdc

Emitter±Base Voltage

VEB

 

7.0

 

 

Vdc

Collector Current Ð Continuous

IC

 

15

 

 

Adc

Ð Peak

 

 

30

 

 

 

 

 

 

 

 

 

 

Base Current Ð Continuous

IB

 

0.25

 

 

Adc

Ð Peak

 

 

0.50

 

 

 

 

 

 

 

 

 

 

Emitter Current Ð Continuous

IE

 

15.25

 

 

Adc

Ð Peak

 

 

30.5

 

 

 

 

 

 

 

 

 

 

 

Total Power Dissipation

PD

 

120

 

 

Watts

@ TC = 25_C

 

 

 

 

Derate above 25_C

 

 

0.685

 

 

W/_C

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

 

± 65 to +200

 

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RqJC

1.46

_C/W

Maximum Lead Temperature for Soldering

TL

265

_C

Purposes: 1/16″ from Case for 10s.

 

 

 

 

 

 

 

(1) Indicates JEDEC Registered Data.

 

 

 

DARLINGTON SCHEMATIC

 

COLLECTOR

BASE

 

[ 4 k

[ 50

 

EMITTER

REV 7

2N6576

2N6577

2N6578

15 AMPERE

POWER TRANSISTORS

NPN SILICON

DARLINGTON

60, 90, 120 VOLTS

120 WATTS

CASE 1±07 TO±204AA (TO±3)

Motorola, Inc. 1995

2N6576

2N6577

2N6578

 

 

 

 

 

*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

VCEO(sus)

 

 

Vdc

 

(IC = 200 mAdc, IB = 0)

 

2N6576

 

60

Ð

 

 

 

 

 

 

2N6577

 

90

Ð

 

 

 

 

 

 

2N6578

 

120

Ð

 

 

 

 

 

 

 

 

 

Collector Cutoff Current (VCE = Rated Value)

ICEO

Ð

1.0

mAdc

 

Collector Cutoff Current

 

 

ICER

Ð

5.0

mAdc

 

(VCER = Rated VCEO(sus) Value, RBE = 10 kΩ, TC = 150_C)

 

 

 

 

 

Collector Cutoff Current

 

 

ICEV

Ð

5.0

mAdc

 

VCEX = Rated VCEO(sus) Value, VBE(off) = 1.5 Vdc)

 

 

 

 

 

Collector Cutoff Current (VCB = Rated Value)

ICBO

Ð

0.5

mAdc

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

hFE

 

 

Ð

 

(IC = 15 Adc, VCE = 4.0 Vdc)

 

 

100

Ð

 

 

(IC = 10 Adc, VCE = 3.0 Vdc)

 

 

500

5,000

 

 

(IC = 4.0 Adc, VCE = 3.0 Vdc)

 

 

2000

20,000

 

 

(IC = 0.4 Adc, VCE = 3.0 Vdc)

 

 

200

Ð

 

 

Collector±Emitter Saturation Voltage

 

VCE(sat)

 

 

Vdc

 

(IC = 15 Adc, IB = 0.15 Adc)

 

 

Ð

4.0

 

 

(IC = 10 Adc, IB = 0.1 Adc)

 

 

Ð

2.8

 

 

Base±Emitter Saturation Voltage

 

VBE(sat)

 

 

Vdc

 

(IC = 15 Adc, IB = 0.15 Adc)

 

 

Ð

4.5

 

 

(IC = 10 Adc, IB = 0.1 Adc)

 

 

Ð

3.5

 

 

Collector±Emitter Diode Voltage Drop

 

VF

Ð

4.5

Vdc

 

(IEC = 15 Adc)

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Magnitude of Common±Emitter Small±Signal Short±Circuit Current Transfer Ratio

|hfe|

10

200

Ð

 

(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

 

 

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

RESISTIVE LOAD (Figure 2)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

 

(VCC = 30 Vdc, IC = 10 Adc, IB1 = 0.1 Adc,

td

Ð

0.15

μs

 

Rise Time

 

 

 

tp = 300 μs, Duty Cycle v 2.0%)

tr

Ð

1.0

μs

 

Storage Time

 

(VCC

= 30 Vdc, IC = 10 Adc, IB1 = IB2 = 0.1 Adc,

ts

Ð

2.0

μs

 

Fall Time

 

 

 

tp = 300 μs, Duty Cycle v 2.0%)

tf

Ð

7.0

μs

* Indicates JEDEC Registered Data

(1) Pulse test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

 

40

 

 

 

 

 

 

 

(AMP)

20

 

 

 

 

 

100 μs

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

5.0

TJ = 200°C

 

dc

 

 

1.0 ms

 

2.0

 

 

 

 

 

BONDING WIRE LIMITED

 

 

5.0 ms

, COLLECTOR

1.0

THERMAL LIMIT, SINGLE PULSE,

 

 

 

 

0.5

TC = 25°C

 

 

 

 

 

SECOND BREAKDOWN LIMIT

 

 

 

 

 

 

 

0.2

 

 

 

2N6576

 

 

 

C

 

 

 

 

2N6577

 

 

 

I

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N6578

 

 

 

 

0.05

 

 

 

 

 

 

 

5.0

10

20

40

60

100

150

 

2.0

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 1. Rated Forward Biased

Safe±Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 1 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10%.

TJ(pk) may be calculated from the data in Figure 6. At high case temperatures thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

2

Motorola Bipolar Power Transistor Device Data

hFE, DC CURRENT GAIN

10 k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 k

 

+ 150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2 k

 

25°

C

 

 

 

 

 

 

 

VCE = 3

Vdc

 

 

 

 

 

 

 

 

 

1 k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

500

 

± 30°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

0.5

1.0

2.0

 

5.0

 

10

15

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

 

Figure 2. DC Current Gain

VCE, COLLECTOR±EMITTER (VOLTS)

 

 

 

 

 

 

 

 

 

 

 

 

2N6576

2N6577

 

2N6578

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

A

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.0001

0.0003

 

 

0.001

0.002

0.005

0.01

0.02

0.05

 

0.1

 

 

 

 

 

 

 

 

IB, BASE CURRENT (AMPS)

 

 

 

 

 

 

 

 

 

Figure 3. Collector Saturation Region

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VBE(sat) @ IC/IB = 100

 

 

 

 

4

I

/I

 

= 100

 

 

 

 

 

 

4

VBE(on) @ VCE = 3 V, 25°C

 

 

 

 

C B

 

 

 

 

 

 

(VOLTS)

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

3

 

TJ = + 150°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+ 25°C

 

 

 

 

1.5

 

 

 

 

 

 

 

 

 

VOLTAGEV,

1.5

 

 

 

 

 

 

 

 

± 30°C

 

 

 

 

 

 

± 30°C

 

 

 

 

2

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

+ 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

+150°C

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

0.2

 

0.5

1

2

5

10

15

 

0.2

0.5

1

2

5

10

15

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

Figure 4. Collector Saturation Voltage

Figure 5. Base±Emitter Voltage

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.1

 

 

 

 

 

 

 

 

 

θJC(t) = r(t) θJC

 

 

 

P(pk)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.07

 

 

 

 

 

 

 

 

 

θJC = 1.46

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.05

0.02

 

 

 

 

 

 

 

 

 

D CURVES APPLY FOR POWER

t1

 

 

 

 

0.03

 

 

 

 

 

 

 

 

 

 

PULSE TRAIN SHOWN

 

 

t2

 

 

 

 

 

SINGLE PULSE

 

 

 

 

 

READ TIME AT t1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

 

0.01

 

 

 

 

 

 

 

 

TJ(pk) ± TC = P(pk) θJC(t)

 

DUTY CYCLE, D = t1/t2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

300

500

700

1000

0.1

t, TIME (ms)

Figure 6. Thermal Response

Motorola Bipolar Power Transistor Device Data

3

2N6576 2N6577 2N6578

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

2N6576/D

*2N6576/D*

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