MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE1123/D
Bipolar Power PNP
Low Dropout Regulator
Transistor
The MJE1123 is an applications specific device designed to provide low±dropout linear regulation for switching±regulator post regulators, battery powered systems and other applications. The MJE1123 is fully specified in the saturation region and exhibits the following main features:
•High Gain Limits Base±Drive Losses to only 1±2% of Circuit Output Current
•Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
•Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp
MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.)
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Sustaining Voltage |
VCEO |
40 |
Vdc |
Collector±Base Voltage |
VCB |
50 |
Vdc |
Emitter±Base Voltage |
VEB |
5.0 |
Vdc |
Collector Current Ð Continuous |
IC |
4.0 |
Adc |
Collector Current Ð Peak |
ICM |
8.0 |
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Base Current Ð Continuous |
IB |
4.0 |
Adc |
Total Power Dissipation @ TC = 25°C |
PD |
75 |
Watts |
Derate above 25°C |
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0.6 |
W/°C |
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Operating and Storage Temperature |
TJ, Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS
Thermal Resistance Ð Junction to Case ° |
RqJC |
°1.67° |
°C/W |
Thermal Resistance Ð Junction to Ambient ° |
RqJA |
°70° |
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Maximum Lead Temperature for Soldering Purposes: |
TL |
275 |
°C |
1/8″ from Case for 5 seconds |
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ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted)
MJE1123
PNP LOW DROPOUT
TRANSISTOR
4.0 AMPERES
40 VOLTS
CASE 221A±06
TO±220AB
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS* |
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Collector±Emitter Sustaining Voltage (IC = 1.0 mA, I = 0) |
VCEO(sus) |
40 |
65 |
Ð |
Vdc |
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Emitter±Base Voltage (IE = 100 mA) |
VEBO |
7.0 |
11 |
Ð |
Vdc |
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Collector Cutoff Current |
ICEO |
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mAdc |
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(VCE = 7.0 Vdc, IB = 0) |
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Ð |
Ð |
100 |
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(VCE = 20 Vdc, IB = 0) |
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Ð |
Ð |
250 |
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ON CHARACTERISTICS* |
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Collector±Emitter Saturation Voltage |
VCE(sat) |
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Vdc |
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(IC = 1.0 Adc, IB = 20 mAdc) |
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Ð |
0.16 |
0.30 |
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(IC = 1.0 Adc, IB = 50 mAdc) |
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Ð |
0.13 |
0.25 |
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(IC = 1.0 |
Adc, IB = 120 mAdc) |
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Ð |
0.10 |
0.20 |
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(IC = 2.0 |
Adc, IB = 50 mAdc) |
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Ð |
0.25 |
0.40 |
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(IC = 2.0 |
Adc, IB = 120 mAdc) |
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Ð |
0.20 |
0.35 |
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(IC = 4.0 |
Adc, IB = 120 mAdc) |
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Ð |
0.45 |
0.75 |
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* Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. |
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(continued) |
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Motorola, Inc. 1995
MJE1123
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C Unless Otherwise Noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS* (continued) |
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Base±Emitter Saturation Voltage |
VBE(sat) |
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Vdc |
(IC = 1.0 Adc, IB = 20 mAdc) |
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Ð |
0.77 |
0.95 |
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(IC = 2.0 Adc, IB = 50 mAdc) |
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Ð |
0.87 |
1.20 |
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(IC = 4.0 Adc, IB = 120 mAdc) |
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Ð |
1.00 |
1.40 |
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DC Current Gain |
hFE |
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Ð |
(IC = 1.0 Adc, VCE = 7.0 Vdc) |
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100 |
170 |
225 |
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(IC = 1.0 Adc, VCE = 10 Vdc) |
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100 |
180 |
225 |
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(IC = 2.0 Adc, VCE = 7.0 Vdc) |
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75 |
120 |
170 |
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(IC = 2.0 Adc, VCE = 10 Vdc) |
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80 |
140 |
180 |
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(IC = 4.0 Adc, VCE = 7.0 Vdc) |
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45 |
75 |
100 |
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(IC = 4.0 Adc, VCE = 10 Vdc) |
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45 |
79 |
100 |
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Base±Emitter On Voltage |
VBE(on) |
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Vdc |
(IC = 1.0 Adc, VCE = 1.0 Vdc) |
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Ð |
0.75 |
0.90 |
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(IC = 2.0 Adc, VCE = 1.0 Vdc) |
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Ð |
0.84 |
1.00 |
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(IC = 4.0 Adc, VCE = 1.0 Vdc) |
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Ð |
0.90 |
1.20 |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product |
fT |
5.0 |
11.5 |
Ð |
MHz |
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |
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* Indicates Pulse Test: Pulse Width = 300 μs max, Duty Cycle = 2%. |
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100 |
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COLLECTOR±EMITTER |
VOLTAGE (VOLTS) |
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TJ = 25°C |
IB = 20 mA |
10 |
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50 mA |
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1 |
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100 mA |
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, |
SATURATION |
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120 mA |
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CE(sat) |
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V |
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0.1 |
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0.1 |
1 |
10 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 1. Saturation Voltage versus Collector Current as a Function of Base Drive
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1 |
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COLLECTOR±EMITTER |
VOLTAGE (VOLTS) |
0.8 |
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0.6 |
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IC = 4 A, IB = 100 mA |
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0.4 |
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, |
SATURATION |
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IC = 2 A, IB = 50 mA |
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CE(sat) |
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0.2 |
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V |
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IC = 1 A, IB = 20 mA |
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0 |
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20 |
40 |
60 |
80 |
100 |
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TJ, CASE TEMPERATURE (°C) |
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Figure 2. Saturation Voltage
versus Temperature
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1.2 |
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IB = 20 mA |
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1.1 |
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1.1 |
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VOLTAGE (VOLTS) |
1 |
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50 mA |
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VOLTAGE (VOLTS) |
1 |
BASE±EMITTER |
0.9 |
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120 mA |
BASE±EMITTER |
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0.8 |
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0.7 |
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0.9 |
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0.6 |
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0.5 |
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0.8 |
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, |
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, |
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BE(sat) |
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0.4 |
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BE(S) |
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0.3 |
TJ = 25°C |
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0.7 |
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V SATURATION |
0.2 |
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V |
SATURATION |
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0.1 |
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0 |
1 |
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10 |
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0.6 |
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0.1 |
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IC, COLLECTOR CURRENT (AMPS)
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IC = 4 A, IB = 100 mA |
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IC = 2 A, IB = 50 mA |
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IC = 1 A, IB = 20 mA |
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20 |
40 |
60 |
80 |
100 |
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TJ, CASE TEMPERATURE (°C) |
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Figure 3. Base±Emitter Saturation Voltage |
Figure 4. Base±Emitter Saturation Voltage |
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versus Temperature |
2 |
Motorola Bipolar Power Transistor Device Data |
1000 |
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40 |
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TJ = 25°C |
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(%) |
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C |
30 |
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° |
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CURRENTDC GAIN |
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25 |
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CHANGERELATIVE TO |
20 |
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100 |
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VCE = 2 V |
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7 V |
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10 |
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10 V |
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GAIN |
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10 |
1 |
10 |
100 |
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0 |
0.1 |
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0.1 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 5. DC Current Gain
MJE1123
VCE = 2, 7, or 10 V
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TJ = 100°C |
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50°C |
1 |
10 |
100 |
IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain Variation
TYPICAL LOW PASS TRANSISTOR APPLICATION
The MJE1123 was designed to operate as a low pass transistor in conjunction with the LT1123 offered by Linear Technology Corporation. Together they provide several excellent advantages:
ÐA dropout voltage below 50 mV at 1.0 amp, increasing to only 225 mV at 4.0 amps, typically.
ÐLine and load regulation are within 5.0 mV.
ÐInitial output accuracy is better than 1 percent.
ÐFull short circuit protection is included.
Ð Base drive loss is less than 2% of output current . . . even at 4.0 full amps output.
ÐThe high gain and excellent collector±emitter saturation voltage make the combination better than monolithic devices.
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10 μF* |
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600 Ω |
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5.6 V |
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20 Ω |
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*REQUIRED IF DEVICE IS |
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DRIVE |
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*MORE THAN 6″ FROM MAIN |
LT1123 FB |
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*FILTER CAPACITOR. |
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GND |
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#REQUIRED FOR STABILITY |
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#(LARGER VALUES INCREASE |
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#STABILITY). |
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MJE1123
5 V
OUTPUT
10 μF#
(VOLTS) |
0.4 |
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VOLTAGE |
0.3 |
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DROPOUT |
0.2 |
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REGULATOR |
0.1 |
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TYPICAL |
0 |
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0 |
1 |
2 |
3 |
4 |
5 |
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REGULATOR CIRCUIT OUTPUT CURRENT (AMPS)
Figure 7. Typical Dropout Voltage of a
MJE1123 and LT1123 Circuit
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100 |
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(AMPS) |
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TJ = 150°C |
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10 |
1 ms |
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CURRENT |
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5 ms |
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COLLECTOR, |
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DC |
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1 |
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C |
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I |
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0.1 |
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1 |
10 |
100 |
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VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) |
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Figure 8. Maximum Forward Bias Safe
Operating Area
Motorola Bipolar Power Transistor Device Data |
3 |
MJE1123 |
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(NORMALIZE |
1 |
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0.5 |
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D = 0.5 |
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RESISTANCE |
0.3 |
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D = 0.2 |
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0.2 |
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0.1 |
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D = 0.1 |
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RθJC(t) = r(t) RθJC |
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THERMAL |
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D = 0.05 |
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P(pk) |
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0.05 |
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RθJC = 1.67°C/W MAX |
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t1 |
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D CURVES APPLY FOR POWER |
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D = 0.02 |
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0.03 |
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PULSE TRAIN SHOWN |
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TRANSIENT |
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t2 |
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READ TIME AT t1 |
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0.02 |
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D = 0.01 |
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DUTY CYCLE, D = t /t |
T |
J(pk) |
± T |
= P |
Rθ |
(t) |
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SINGLE PULSE |
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1 2 |
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C |
(pk) |
JC |
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0.01 |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1 |
2 |
5 |
10 |
20 |
50 |
100 |
200 |
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500 |
1K |
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r(t), |
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t, TIME (ms)
Figure 9. Typical Thermal Response
4 |
Motorola Bipolar Power Transistor Device Data |
MJE1123
PACKAGE DIMENSIONS
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±T± |
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B |
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F |
C |
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T |
S |
4 |
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Q |
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A |
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1 |
2 |
3 |
U |
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H |
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Z |
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K |
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L |
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R |
V |
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J |
G |
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D |
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N |
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SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
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INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data |
5 |
MJE1123
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