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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUH150/D

BUH150

Designer's Data Sheet

SWITCHMODE NPN Silicon

Planar Power Transistor

POWER TRANSISTOR

15 AMPERES

700 VOLTS

150 WATTS

The BUH150 has an application specific state±of±art die designed for use in 150 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current during either the start±up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•Improved Efficiency Due to the Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

•Robustness Thanks to the Technology Developed to Manufacture this Device

•Motorola ª6 SIGMAº Philosophy Provides Tight and Reproducible Parametric Distributions

MAXIMUM RATINGS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	400	Vdc
Collector±Base Breakdown Voltage	VCBO	700	Vdc
Collector±Emitter Breakdown Voltage	VCES	700	Vdc
Emitter±Base Voltage	VEBO	10	Vdc
Collector Current Ð Continuous	IC	15	Adc
Ð Peak (1)	ICM	25
Base Current Ð Continuous	IB	6	Adc
Base Current Ð Peak (1)	IBM	12
*Total Device Dissipation @ TC = 25_C	PD	150	Watt
*Derate above 25°C		1.2	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance			_C/W
Ð Junction to Case	RqJC	0.85
Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes:	TL	260	_C
1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

BUH150

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic				Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage					VCEO(sus)	400	460		Vdc
(IC = 100 mA, L = 25 mH)
Collector±Base Breakdown Voltage					VCBO	700	860		Vdc
(ICBO = 1 mA)
Emitter±Base Breakdown Voltage					VEBO	10	12.3		Vdc
(IEBO = 1 mA)
Collector Cutoff Current					ICEO			100	μAdc
(VCE = Rated VCEO, IB = 0)
Collector Cutoff Current		@ TC = 25°C			ICES			100	μAdc
(VCE = Rated VCES, VEB = 0)		@ TC = 125°C						1000
Collector Base Current		@ TC = 25°C			ICBO			100	μAdc
(VCB = Rated VCBO, VEB = 0)		@ TC = 125°C						1000
Emitter±Cutoff Current					IEBO			100	μAdc
(VEB = 9 Vdc, IC = 0)
ON CHARACTERISTICS

Base±Emitter Saturation Voltage					VBE(sat)		1	1.25	Vdc
(IC = 10 Adc, IB = 2 Adc)
Collector±Emitter Saturation Voltage		@ TC = 25°C			VCE(sat)		0.16	0.4	Vdc
(IC = 2 Adc, IB = 0.4 Adc)		@ TC = 125°C					0.15	0.4
(IC = 10 Adc, IB = 2 Adc)		@ TC = 25°C					0.45	1	Vdc
(IC = 20 Adc, IB = 4 Adc)		@ TC = 25°C					2	5	Vdc
DC Current Gain (IC = 20 Adc, VCE = 5 Vdc)		@ TC = 25°C			hFE	4	7		Ð
		@ TC = 125°C				2.5	4.5
DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)		@ TC = 25°C				8	12		Ð
		@ TC = 125°C				6	10
DC Current Gain (IC = 2 Adc, VCE = 1 Vdc)		@ TC = 25°C				12	20		Ð
		@ TC = 125°C				14	22
DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc)		@ TC = 25°C				10	20		Ð
DYNAMIC SATURATION VOLTAGE

Dynamic Saturation	IC = 5 Adc, IB1 = 1 Adc	@ TC = 25°C			VCE(dsat)		1.5		V
Voltage:	VCC = 300 V
Voltage:		@ T	C	= 125°C			2.8		V
μ		@ T	C	= 125°C			2.8		V
Determined 3 s after
rising IB1 reaches	IC = 10 Adc, IB1 = 2 Adc	@ T	C	= 25°C			2.4		V
90% of final IB1			C

	VCC = 300 V			°			5		V
(see Figure 19)	VCC = 300 V			°
(see Figure 19)		@ TC = 125 C
DYNAMIC CHARACTERISTICS

Current Gain Bandwidth					fT		23		MHz
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance					Cob		100	150	pF
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance					Cib		1300	1750	pF
(VEB = 8 Vdc, f = 1 MHz)

2	Motorola Bipolar Power Transistor Device Data

									BUH150
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic				Symbol	Min	Typ	Max		Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

Turn±on Time				@ TC = 25°C	ton		200	300		ns
Storage Time	IC = 2 Adc, IB1 = 0.2 Adc			@ T = 25°C	t		5.3	6.5		μs
		IB2 = 0.2 Adc		C	s
Fall Time		IB2 = 0.2 Adc		@ TC = 25°C	tf		240	350		ns
Fall Time		VCC = 300 Vdc		@ TC = 25°C	tf		240	350		ns
Turn±off Time				@ TC = 25°C	toff		5.6	7		μs
Turn±on Time				@ TC = 25°C	ton		100	200		ns
Storage Time	IC = 2 Adc, IB1 = 0.4 Adc			@ T = 25°C	t		6.1	7.5		μs
		IB2 = 0.4 Adc		C	s
Fall Time		IB2 = 0.4 Adc		@ TC = 25°C	tf		320	500		ns
Fall Time		VCC = 300 Vdc		@ TC = 25°C	tf		320	500		ns
Turn±off Time				@ TC = 25°C	toff		6.5	8		μs
Turn±on Time	I	= 5 Adc, I	= 0.5 Adc	@ TC = 25°C	ton		450	650		ns
	I	= 5 Adc, I	= 0.5 Adc	°			800
	C	B1		@ TC = 125 C			800
		IB2 = 0.5 Adc
Turn±off Time		IB2 = 0.5 Adc		@ TC = 25°C	toff		2.5	3		μs
Turn±off Time		VCC = 300 Vdc		@ TC = 25°C	toff		2.5	3		μs
				@ TC = 125°C			3.9
Turn±on Time	I	= 10 Adc, I	= 2 Adc	@ TC = 25°C	ton		500	700		ns
	I	= 10 Adc, I	= 2 Adc	°			900
	C	B1		@ TC = 125 C			900
		IB2 = 2 Adc
Turn±off Time		IB2 = 2 Adc		@ TC = 25°C	toff		2.25	2.75		μs
Turn±off Time		VCC = 300 Vdc		@ TC = 25°C	toff		2.25	2.75		μs
				@ TC = 125°C			2.75
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)
Fall Time				@ TC = 25°C	tfi		110	250		ns
		IC = 2 Adc		@ TC = 125°C			160
Storage Time		IC = 2 Adc		@ TC = 25°C	tsi		6.5	8		μs
Storage Time		IB1 = 0.2 Adc		@ TC = 25°C	tsi		6.5	8		μs
		IB1 = 0.2 Adc		@ TC = 125°C			8
		IB2 = 0.2 Adc		@ TC = 125°C			8
Crossover Time				@ TC = 25°C	tc		235	350		ns
				@ TC = 125°C			240
Fall Time				@ TC = 25°C	tfi		110	250		ns
		IC = 2 Adc		@ TC = 125°C			170
Storage Time		IC = 2 Adc		@ TC = 25°C	tsi		6	7.5		μs
Storage Time		IB1 = 0.4 Adc		@ TC = 25°C	tsi		6	7.5		μs
		IB1 = 0.4 Adc		@ TC = 125°C			7.8
		IB2 = 0.4 Adc		@ TC = 125°C			7.8
Crossover Time				@ TC = 25°C	tc		250	350		ns
				@ TC = 125°C			270
Fall Time				@ TC = 25°C	tfi		110	150		ns
		IC = 5 Adc		@ TC = 125°C			140
Storage Time		IC = 5 Adc		@ TC = 25°C	tsi		3.25	3.75		μs
Storage Time		IB1 = 0.5 Adc		@ TC = 25°C	tsi		3.25	3.75		μs
		IB1 = 0.5 Adc		@ TC = 125°C			4.6
		IB2 = 0.5 Adc		@ TC = 125°C			4.6
Crossover Time				@ TC = 25°C	tc		275	350		ns
				@ TC = 125°C			450
Fall Time				@ TC = 25°C	tfi		110	175		ns
		IC = 10 Adc		@ TC = 125°C			160
Storage Time		IC = 10 Adc		@ TC = 25°C	tsi		2.3	2.75		μs
Storage Time		IB1 = 2 Adc		@ TC = 25°C	tsi		2.3	2.75		μs
		IB1 = 2 Adc		@ TC = 125°C			2.8
		IB2 = 2 Adc		@ TC = 125°C			2.8
Crossover Time				@ TC = 25°C	tc		250	350		ns
				@ TC = 125°C			475

Motorola Bipolar Power Transistor Device Data

BUH150

TYPICAL STATIC CHARACTERISTICS

	100
					VCE = 1 V
GAIN			TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
	10			TJ = 25°C

FE
h
	1					100
	0.001	0.01	0.1	1	10	100
			IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	100
					VCE = 5 V
GAIN		TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C	TJ = 25°C
	10		TJ = 25°C

FE
h
	1
	0.01	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volt

	10
		IC/IB = 10
(VOLTS)	1
(VOLTS)
,VOLTAGE			TJ = 125°C
,VOLTAGE	0.1
CE	0.1
CE
V
				TJ = 25°C
	0.01	0.01				100
	0.001	0.01	0.1	1	10	100
			IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
					VCE = 3 V
GAIN			TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
	10			TJ = 25°C

FE
h
	1
	0.001	0.01	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volt

	10
		IC/IB = 5			TJ = 125°C
(VOLTS)					TJ = 125°C
	1

,VOLTAGE			TJ = 25°C
,VOLTAGE	0.1		TJ = ± 20°C
CE	0.1		TJ = ± 20°C
CE
V
	0.01	0.01			10
	0.001	0.01	0.1	1	10	100
			IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	1.5
		IC/IB = 5
(VOLTS)	1
(VOLTS)		TJ = ± 20°C
, VOLTAGE		TJ = ± 20°C
, VOLTAGE	0.5	TJ = 25°C
BE	0.5
BE
V		TJ = 125°C
		TJ = 125°C
	0				10
	0.001	0.01	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base±Emitter Saturation Region

4	Motorola Bipolar Power Transistor Device Data

											BUH150
					TYPICAL STATIC CHARACTERISTICS
	1.5						2
		IC/IB = 10									TJ = 25°C
		IC/IB = 10
(VOLTS)						(VOLTS)	1.5
(VOLTS)	1					(VOLTS)
	1
VOLTAGE,		TJ = ± 20°C				VOLTAGE,	1			20 A
VOLTAGE,		TJ = 25°C				VOLTAGE,				20 A

BE	0.5					CE
BE		TJ = 125°C				CE	0.5	VCE(sat)		15 A
V		TJ = 125°C				V	0.5	VCE(sat)		15 A
								(IC = 1 A)	10 A
									8 A
									5 A
	0	0.01			10		0			10
	0.001	0.01	0.1	1	10	100	0.01	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)							IB, BASE CURRENT (A)

Figure 7. Base±Emitter Saturation Region

Figure 8. Collector Saturation Region

	10000
			TJ = 25°C
		Cib (pF)	f(test) = 1 MHz
(pF)		Cib (pF)
(pF)	1000
CAPACITANCE	100		Cob (pF)
C,
	10
	1	10	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitance

	900
			TJ = 25°C
	800	BVCER @ 10 mA
(VOLTS)	700
(VOLTS)
BVCER	600	BVCER(sus) @ 200 mA
	600

	500
	400
	10	100	1000
		RBE (Ω)

Figure 10. Resistive Breakdown

Motorola Bipolar Power Transistor Device Data

BUH150

TYPICAL SWITCHING CHARACTERISTICS

	2000
	1800	IB1 = IB2
	1600	VCC = 300 V			IC/IB = 10
	1400	PW = 40 μs
	1400				25°C
(ns)	1200		125°C
(ns)
t, TIME	1000				125°C
t, TIME	800
	600
	400			25°C
	200			25°C	IC/IB	= 5
	200				IC/IB	= 5
	0			9	12
	0	3	6	9	12	15
		IC, COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switching, ton

	8
	7			IC/IB = 5			IB1 = IB2
							VCC = 15 V
	6						VZ = 300 V
μs)	5						LC = 200 μH
(
t, TIME	4
t, TIME	3
	3
	2
	1		TJ = 125°C
	1		TJ = 25°C
			TJ = 25°C
	0
	1	3	5	7	9	11	13	15

IC, COLLECTOR CURRENT (AMPS)

	12
		TJ = 25°C	IB1 = IB2
	10	TJ = 125°C	VCC = 300 V
			PW = 20 μs
μs)	8
μs)
(		IC/IB = 5
t, TIME	6	IC/IB = 5
t, TIME
	4
	2	IC/IB = 10
	0	5
	0	5	10	15
		IC, COLLECTOR CURRENT (AMPS)

Figure 12. Resistive Switch Time, toff

	8
	7	IC/IB = 10		IB1 = IB2
				VCC = 15 V
	6			VZ = 300 V
μs)	5			LC = 200 μH
(
t, TIME	4
t, TIME	3
	3
	2
	1	TJ = 125°C
	1	TJ = 25°C
		TJ = 25°C
	0
	1	4	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, tsi

Figure 13 Bis. Inductive Storage Time, tsi

	550	IB1 = IB2			TJ = 125°C				800
		IB1 = IB2			TJ = 125°C				700
		VCC = 15 V			TJ = 25	°			700
	450	VCC = 15 V			TJ = 25	C
	450	VZ = 300 V							600
		LC = 200 μH							600
		LC = 200 μH
(ns)	350						tc	(ns)	500
	350

t, TIME								t, TIME	400
t, TIME	250						tfi	t, TIME	300
							tfi		300
	150								200
	150
									100
	50		5						0
	1	3	5	7	9	11	13	15

	IB1 = IB2		TC = 125°C
	VCC = 15 V		TC = 25°C
	VZ = 300 V
	LC = 200 μH
				tc
					tfi
0	2	4	6	8	10

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 14. Inductive Storage Time,	Figure 15. Inductive Storage Time,
tc & tfi @ IC/IB = 5	tc & tfi @ IC/IB = 10

6	Motorola Bipolar Power Transistor Device Data

BUH150

TYPICAL SWITCHING CHARACTERISTICS

	5							200
s)	4						IC = 5 A	150
s)								150
TIME (μ	3							TIME (ns)
TIME (μ								TIME (ns)
STORAGE								100
	2							FALL
								,
								fi
		I	= I					t
,
si
t		B1	B2					50
	1	VCC = 15 V						50
	1	VCC = 15 V		I		= 10 A
		V	= 300 V	I	C	= 10 A		°
		Z	= 200 μH		C		TJ = 125 C
		L	= 200 μH				TJ = 25	°
	0	C					TJ = 25	C
	0	2	4			6	8	0
		2	4			6	8	10

			TJ = 125°C
			TJ = 25°C
					IC = 5 A	IBoff = IB2
	IC = 10 A					IBoff = IB2
	IC = 10 A					VCC = 15 V
						VZ = 300 V
						LC = 200 μH
3	4	5	6	7	8	9	10

hFE, FORCED GAIN	hFE, FORCED GAIN
Figure 16. Inductive Storage Time	Figure 17. Inductive Fall Time

	800
	700	IB1 = IB2			TJ = 125°C
	700	VCC = 15 V			TJ = 25	°
		VCC = 15 V			TJ = 25	C
(ns)		VZ = 300 V
(ns)	600	LC = 200 μH
TIME	600	LC = 200 μH
TIME	500						IC = 10 A
CROSSOVER	500
	400
						I	= 5 A
,	300					C
c	300
t
	200
	100
	3	4	5	6	7	8	9	10

hFE, FORCED GAIN

Figure 18. Inductive Crossover Time

Motorola Bipolar Power Transistor Device Data

BUH150

TYPICAL SWITCHING CHARACTERISTICS

	VCE
	dyn 1 μs
		dyn 3 μs
0 V
	90% IB
	1 μs
IB	3	μs
	3	μs
		TIME

Figure 19. Dynamic Saturation Voltage

Measurements

10
9	IC					90% I
						C
8				tsi		tfi
7				tsi
7
6
5	Vclamp	10% Vclamp				tc	10% IC
4						tc
4
3	I	90% IB1
	B
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 μF	150 Ω	100 Ω	MTP8P10	100	μF
1 μF	150 Ω	100 Ω	MTP8P10
	3 W	3 W
	3 W
				MTP8P10	VCE
MPF930			MUR105	RB1	IB1
	MPF930		MUR105		IB1
+10 V	MPF930			Iout	I
					B
				A
50 Ω			MJE210	RB2
				RB2

COMMON		150 Ω		MTP12N10
		150 Ω		MTP12N10	V(BR)CEO(sus)
	500 μF	3 W			V(BR)CEO(sus)
		3 W			L = 10 mH
					L = 10 mH
				1 μF	RB2 = ∞
				1 μF	VCC = 20 Volts
±Voff					IC(pk) = 100 mA
±Voff

IC PEAK

VCE PEAK

IB2
Inductive Switching	RBSOA
L = 200 μH	L = 500 μH
RB2 = 0	RB2 = 0
VCC = 15 Volts	VCC = 15 Volts
RB1 selected for	RB1 selected for
desired IB1	desired IB1

TYPICAL THERMAL RESPONSE

	1
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6
		THERMAL DERATING
	0.4
POWER	0.4
POWER	0.2
	0.2
	0	40	60	80		120	140
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 21. Forward Bias Power Derating

8	Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based

on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21.

BUH150

TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

	100
(AMPS)				1 μs
(AMPS)	10		10 μs
COLLECTOR CURRENT			5 ms
			1 ms	EXTENDED SOA
			DC
	1
	0.1

,
C
I
	0.01
	1	10	100	1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 22. Forward Bias Safe Operating Area

	16
(AMPS)	14		GAIN ≥	5	TC ≤ 125°C
					LC = 4 mH
	12
CURRENT	10
CURRENT	8
,COLLECTOR	8
	6		± 5 V
			± 5 V
	4
			0 V		±1.5 V
C	2		0 V		±1.5 V
I

	0
	300	400	500	600	700	800

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

TYPICAL THERMAL RESPONSE

		1
TRANSIENTTHERMAL RESISTANCE			0.5
	(NORMALIZED)		0.2
		0.1	0.1			P(pk)		RθJC(t) = r(t) RθJC
								RθJC = 0.83°C/W MAX
			0.05					D CURVES APPLY FOR POWER
			0.02			t1		PULSE TRAIN SHOWN
			0.02			t1	t	READ TIME AT t1
r(t),							2	TJ(pk) ± TC = P(pk) RθJC(t)
r(t),				SINGLE PULSE		DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) RθJC(t)
		0.01		SINGLE PULSE
		0.01
		0.01		0.1	1	10		100	1000

t, TIME (ms)

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH150

Motorola Bipolar Power Transistor Device Data

BUH150

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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