MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3773/D
Complementary Silicon Power
Transistors
The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters.
•High Safe Operating Area (100% Tested) 150 W @ 100 V
•Completely Characterized for Linear Operation
•High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8 A, 4 V
VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
• For Low Distortion Complementary Designs
*MAXIMUM RATINGS
NPN
2N3773*
PNP
2N6609
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY POWER TRANSISTORS 140 VOLTS
150 WATTS
CASE 1±07 TO±204AA (TO±3)
Rating |
Symbol |
Value |
Unit |
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Collector Emitter Voltage |
VCEO |
140 |
Vdc |
Collector±Emitter Voltage |
VCEX |
160 |
Vdc |
Collector±Base Voltage |
VCBO |
160 |
Vdc |
Emitter±Base Voltage |
VEBO |
7 |
Vdc |
Collector Current Ð Continuous |
IC |
16 |
Adc |
Ð Peak (1) |
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30 |
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Base Current Ð Continuous |
IB |
4 |
Adc |
Ð Peak (1) |
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15 |
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Total Power Dissipation @ TC = 25_C |
PD |
150 |
Watts |
Derate above 25_C |
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0.855 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +200 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.17 |
_C/W |
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
2N3773 |
2N6609 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS (1) |
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*Collector±Emitter Breakdown Voltage |
VCEO(sus) |
140 |
Ð |
Vdc |
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(IC = 0.2 Adc, IB = 0) |
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*Collector±Emitter Sustaining Voltage |
VCEX(sus) |
160 |
Ð |
Vdc |
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(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) |
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Collector±Emitter Sustaining Voltage |
VCER(sus) |
150 |
Ð |
Vdc |
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(IC = 0.2 Adc, RBE = 100 Ohms) |
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*Collector Cutoff Current |
ICEO |
Ð |
10 |
mAdc |
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(VCE = 120 Vdc, IB = 0) |
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*Collector Cutoff Current |
ICEX |
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mAdc |
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(VCE = 140 Vdc, VBE(off) = 1.5 Vdc) |
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Ð |
2 |
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(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) |
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Ð |
10 |
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Collector Cutoff Current |
ICBO |
Ð |
2 |
mAdc |
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(VCB = 140 Vdc, IE = 0) |
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*Emitter Cutoff Current |
IEBO |
Ð |
5 |
mAdc |
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(VBE = 7 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
hFE |
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Ð |
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*(IC = 8 Adc, VCE = 4 Vdc) |
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15 |
60 |
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(IC = 16 Adc, VCE = 4 Vdc) |
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5 |
Ð |
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Collector±Emitter Saturation Voltage |
VCE(sat) |
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Vdc |
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*(IC = 8 Adc, IB = 800 mAdc) |
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Ð |
1.4 |
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(IC = 16 Adc, IB = 3.2 Adc) |
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Ð |
4 |
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*Base±Emitter On Voltage |
VBE(on) |
Ð |
2.2 |
Vdc |
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(IC = 8 Adc, VCE = 4 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Magnitude of Common±Emitter |
|hfe| |
4 |
Ð |
Ð |
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Small±Signal, Short±Circuit, Forward Current Transfer Ratio |
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(IC = 1 A, f = 50 kHz) |
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*Small±Signal Current Gain |
hfe |
40 |
Ð |
Ð |
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(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) |
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SECOND BREAKDOWN CHARACTERISTICS |
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Second Breakdown Collector Current with Base Forward Biased |
IS/b |
1.5 |
Ð |
Adc |
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t = 1 s (non±repetitive), VCE = 100 V, See Figure 12 |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%. |
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* Indicates JEDEC Registered Data. |
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2 |
Motorola Bipolar Power Transistor Device Data |
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NPN |
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300 |
150°C |
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200 |
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GAIN |
100 |
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70 |
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25°C |
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± 55°C |
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CURRENT |
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50 |
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30 |
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VCE = 4 V |
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, DC |
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20 |
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FE |
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h |
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10 |
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7.0 |
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5.0 |
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0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 1. DC Current Gain
(VOLTS) |
2.0 |
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IC = 4 A |
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VOLTAGE |
1.6 |
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1.2 |
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,COLLECTOR±EMITTER |
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IC = 8 A |
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0.8 |
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IC = 16 A |
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0.4 |
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TC = 25°C |
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CE |
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0 |
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V |
0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
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0.05 |
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IB, BASE CURRENT (AMPS) |
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Figure 3. Collector Saturation Region
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2N3773 |
2N6609 |
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PNP |
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300 |
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200 |
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150°C |
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25°C |
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GAIN |
100 |
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± 55°C |
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70 |
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CURRENT |
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50 |
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30 |
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VCE = 4 V |
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, DC |
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20 |
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FE |
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h |
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10 |
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7.0 |
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5.0 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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0.2 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 2. DC Current Gain
(VOLTS) |
2.0 |
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IC |
= 4 A |
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VOLTAGE |
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1.6 |
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IC |
= 16 A |
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1.2 |
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,COLLECTOR±EMITTER |
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IC = 8 A |
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0.8 |
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0.4 |
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TC = 25°C |
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CE |
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0 |
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V |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
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0.05 0.07 |
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IB, BASE CURRENT (AMPS) |
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Figure 4. Collector Saturation Region
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2.0 |
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2.0 |
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IC/IB = 10 |
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IC/IB = 10 |
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1.6 |
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1.6 |
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(VOLTS) |
1.2 |
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(VOLTS) |
1.2 |
VBE(sat) |
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V, VOLTAGE |
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V, VOLTAGE |
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0.8 |
VBE(sat) |
25°C |
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0.8 |
25°C |
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150°C |
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150°C |
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150°C |
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0.4 |
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150°C |
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0.4 |
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25°C |
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VCE(sat) |
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25°C |
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0 |
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VCE(sat) |
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0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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0.2 |
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IC, COLLECTOR CURRENT (AMPS) |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 5. ªOnº Voltage |
Figure 6. ªOnº Voltage |
Motorola Bipolar Power Transistor Device Data |
3 |
2N3773 2N6609
IC, COLLECTOR CURRENT (AMP)
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.05
0.03
3.0
10 μs 40 μs
100 μs
dc 200 μs 1.0 ms
100 ms
500 ms
BONDING WIRE LIMIT THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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100 |
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(%) |
80 |
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FACTOR |
60 |
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DERATING |
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THERMAL |
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40 |
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DERATING |
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POWER |
20 |
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0 |
40 |
80 |
120 |
160 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 8. Power Derating
4 |
Motorola Bipolar Power Transistor Device Data |
2N3773 2N6609
PACKAGE DIMENSIONS
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A |
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N |
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NOTES: |
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C |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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±T± |
SEATING |
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2. CONTROLLING DIMENSION: INCH. |
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E |
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PLANE |
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3. ALL RULES AND NOTES ASSOCIATED WITH |
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REFERENCED TO±204AA OUTLINE SHALL APPLY. |
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D 2 PL |
K |
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INCHES |
MILLIMETERS |
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0.13 (0.005) M |
T |
Q |
M |
Y |
M |
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DIM |
MIN |
MAX |
MIN |
MAX |
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U |
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A |
1.550 REF |
39.37 REF |
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±Y± |
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B |
±±± |
1.050 |
±±± |
26.67 |
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V |
L |
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C |
0.250 |
0.335 |
6.35 |
8.51 |
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2 |
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D |
0.038 |
0.043 |
0.97 |
1.09 |
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B |
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E |
0.055 |
0.070 |
1.40 |
1.77 |
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H |
G |
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G |
0.430 BSC |
10.92 BSC |
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1 |
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H |
0.215 BSC |
5.46 BSC |
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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L |
0.665 BSC |
16.89 BSC |
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±Q± |
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N |
±±± |
0.830 |
±±± |
21.08 |
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0.13 (0.005) M |
T |
Y |
M |
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Q |
0.151 |
0.165 |
3.84 |
4.19 |
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U |
1.187 BSC |
30.15 BSC |
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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2. EMITTER |
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CASE: COLLECTOR |
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CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |
2N3773 2N6609
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2N3773/D |
*2N3773/D*