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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ14001/D

High-Current Complementary

Silicon Power Transistors

. . . designed for use in high±power amplifier and switching circuit applications,

•High Current Capability Ð I C Continuous = 60 Amperes

•DC Current Gain Ð h FE = 15±100 @ IC = 50 Adc

•Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc

MAXIMUM RATINGS

Rating	Symbol			MJ14002	Unit
Rating	Symbol	MJ14001		MJ14003	Unit
		MJ14001		MJ14003

Collector±Emitter Voltage	VCEO	60		80	Vdc
Collector Base Voltage	VCBO	60		80	Vdc
Emitter±Base Voltage	VEBO		5		Vdc
Collector Current Ð Continuous	IC		60		Adc
Base Current Ð Continuous	IB		15		Adc
Emitter Current Ð Continuous	IE		75
Total Power Dissipation @ TC = 25_C	PD		300		Watts
Derate above 25_C			17		W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +200			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.584	_C/W

NPN

MJ14002*

PNP

MJ14001 MJ14003*

*Motorola Preferred Device

60 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSITORS

60 ± 80 VOLTS

300 WATTS

CASE 197A±05

TO±204AE (TO±3)

	360
(WATTS)	330
	270

DISSIPATION	210
DISSIPATION	150
POWER	150
POWER	90
,
D
P
	30
	0	40	80	120	160	200	240
	0	40	80	120	160	200	240
			TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1995

MJ14002		MJ14001	MJ14003
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

			Characteristic		Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)				VCEO(sus)			Vdc
	(IC = 200 mAdc, IB = 0)			MJ14001		60	Ð
				MJ14002, MJ14003		80	Ð

	Collector Cutoff Current				ICEO			mA
	(VCE = 30 Vdc, IB = 0)			MJ14001		Ð	1.0
	(VCE = 40 Vdc, IB = 0)			MJ14402, MJ14003		Ð	1.0
	Collector Cutoff Current				ICEX			mA
	(VCE = 60 Vdc, VBE(off) = 1.5 V)			MJ14001		Ð	1.0
	(VCE = 80 Vdc, VBE(off) = 1.5 V)			MJ14002, MJ14003		Ð	1.0
	Collector Cutoff Current				ICBO			mA
	(VCB = 60 Vdc, IE = 0)			MJ14001		Ð	1.0
	(VCB = 80 Vdc, IE = 0)			MJ14002, MJ14003		Ð	1.0
	Emitter Cutoff Current				IEBO	Ð	1.0	mA
	(VBE = 5 Vdc, IC = 0)
	ON CHARACTERISTICS

	DC Current Gain (1)				hFE			Ð
	(IC = 25 Adc, VCE = 3.0 V)					30	Ð
	(IC = 50 Adc, VCE = 3.0 V)					15	100
	(IC = 60 Adc, VCE = 3.0 V)					5	Ð
	Collector±Emitter Saturation Voltage (1)				VCE(sat)			Vdc
	(IC = 25 Adc, IB = 2.5 Adc)					Ð	1
	(IC = 50 Adc, IB = 5.0 Adc)					Ð	2.5
	(IC = 60 Adc, IB = 12 Adc)					Ð	3
	Base±Emitter Saturation Voltage (1)				VBE(sat)			Vdc
	(IC = 25 Adc, IB = 2.5 Adc)					Ð	2
	(IC = 50 Adc, IB = 5.0 Adc)					Ð	3
	(IC = 60 Adc, IB = 12 Adc)					Ð	4
	DYNAMIC CHARACTERISTICS

	Output Capacitance				Cob	Ð	2000	pF
	(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
	(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%.

	100						5.0 ms		1.0 ms		1.0 μs
	70						5.0 ms		1.0 ms		1.0 μs
	50
(AMP)	30
	20					dc

CURRENT	10
	7.0	TC = 25°C
	5.0	TC = 25°C
	3.0		WIRE BOND LIMIT
COLLECTOR	3.0		THERMAL LIMIT
	2.0		THERMAL LIMIT
	2.0		SECOND BREAKDOWN LIMIT
	1.0		SECOND BREAKDOWN LIMIT
	1.0
	0.7
	0.5
,	0.3
C
I							MJ14001
	0.2						MJ14001
	0.1					MJ14002, MJ14003
	0.1							30		70
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Biased

Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 13. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

2	Motorola Bipolar Power Transistor Device Data

MJ14002 MJ14001 MJ14003

TYPICAL ELECTRICAL CHARACTERISTICS

						NPN											PNP
					MJ14002											MJ14001, MJ14003
	300												300
	200												200
GAIN	100											GAIN	100
GAIN	70			TJ = ± 55°C								GAIN	70			TJ = ± 55°C
CURRENT	50			TJ = ± 55°C								CURRENT	50			TJ = ± 55°C
	50												50
	30		VCE = 3.0 V										30		VCE = 3.0 V
	30												30
, DC	20			TJ = 25°C								, DC	20			TJ = 25°C
, DC				TJ = 150°C								, DC				TJ = 150°C
FE	10											FE	10
h	7.0											h	7.0
	7.0												7.0
	5.0												5.0
	3.0	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70		3.0	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70
	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70		0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70
			IC, COLLECTOR CURRENT (AMPS)												IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain

Figure 4. DC Current Gain

(VOLTS)	2.8											(VOLTS)	2.8
(VOLTS)	2.4		°									(VOLTS)	2.4		°
VOLTAGE		TJ = 25 C							IC = 60 A			VOLTAGE		TJ = 25 C							IC = 60 A
	2.0								IC = 60 A				2.0								IC = 60 A
	2.0												2.0

COLLECTOR±EMITTER	1.6											COLLECTOR±EMITTER	1.6
	1.2				IC = 25 A								1.2				IC = 25 A
	1.2												1.2
	0.8	IC = 10 A											0.8	IC = 10 A
	0.4												0.4
,												,
CE	0											CE	0
V	0	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	V	0	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10		0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
				IB, BASE CURRENT (AMPS)												IB, BASE CURRENT (AMPS)

Figure 5. Collector Saturation Region

Figure 6. Collector Saturation Region

	2.8												2.8			= 25°C
				°										T	J	= 25°C
	2.4		TJ = 25 C										2.4		J
	2.4												2.4
(VOLTS)	2.0											(VOLTS)	2.0
(VOLTS)	1.6											(VOLTS)	1.6
VOLTAGE	1.2											VOLTAGE	1.2
VOLTAGE			VBE(sat) @ IC/IB = 10									VOLTAGE		VBE(sat) @ IC/IB = 10
V,	0.8		VBE(sat) @ IC/IB = 10									V,	0.8	VBE(sat) @ IC/IB = 10
	0.8				VBE(on) @ VCE = 3.0 V								0.8
					VBE(on) @ VCE = 3.0 V													VBE(on) @ VCE = 3.0 V
	0.4												0.4					VBE(on) @ VCE = 3.0 V
	0.4		VCE(sat) @ IC/IB = 10										0.4	VCE(sat) @ IC/IB = 10
			VCE(sat) @ IC/IB = 10										0	VCE(sat) @ IC/IB = 10
	0	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70		0	1.0	2.0		3.0	5.0	7.0	10	20	30	50	70
	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70		0.7	1.0	2.0		3.0	5.0	7.0	10	20	30	50	70
			IC, COLLECTOR CURRENT (AMPS)													IC, COLLECTOR CURRENT (AMPS)

Figure 7. ªOnº Voltages

Figure 8. ªOnº Voltages

Motorola Bipolar Power Transistor Device Data

MJ14002			MJ14001		MJ14003
	1.0												4.0
	0.7												3.0
	0.5			tr									2.0			ts
	0.3			tr
	0.3												1.0
	0.2												1.0
( μs)	0.2											( μs)	0.7
													0.7
	0.07		td										0.5		tf
TIME	0.07											TIME	0.3		tf
	0.1
t,	0.05											t,	0.2
	0.05												0.2
	0.03												0.1
	0.02		MJ14002 (NPN)										0.1			MJ14002 (NPN)
	0.02		MJ14002 (NPN)										0.07			MJ14002 (NPN)
			MJ14001, MJ14003 (PNP)										0.07			MJ14001, MJ14003 (PNP)
	0.01	1.0	2.0	3.0	5.0	7.0							0.04
	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70		0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70
			IC, COLLECTOR CURRENT (AMPS)												IC, COLLECTOR CURRENT (AMPS)

Figure 9. Turn±On Switching Times

Figure 10. Turn±Off Switching Times

VCC

± 30 V

+ 2.0 V

TO SCOPE

10000

tr ≤

±12 V

tr ≤ 20 ns

7000

5000

20 ns

10 to 100 μs

(pF)

3000

DUTY CYCLE ≈ 2.0%

VCC

± 30 V

2000

CAPACITANCE

Cib

Cob

±12 V

+10

Cib

1000

TO SCOPE

700

tr ≤ 20 ns

500

tr ≤ 20 ns

TJ = 25°C

300

10 to 100 μs

MJ14002 (NPN)

DUTY CYCLE ≈ 2.0%

VBB

200

MJ14001, MJ14003 (PNP)

+ 7.0 V

100

FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.

1.0

2.0

3.0

5.0 7.0

100

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

VR, REVERSE VOLTAGE (VOLTS)

FOR NPN CIRCUITS, REVERSE ALL POLARITIES.

Figure 11. Capacitance Variation

Figure 12. Switching Test Circuit

(NORMALIZED)	1.0
	0.7	D = 0.5
	0.5	D = 0.5
	0.5

RESISTANCE	0.3		0.2
	0.2		0.2
	0.2		0.1										RθJC(t) = r(t) RθJC							P(pk)
	0.1		0.05										RθJC = 0.584°C/W MAX
THERMAL	0.1		0.05										D CURVES APPLY FOR POWER
	0.07												D CURVES APPLY FOR POWER
	0.07	0.02											PULSE TRAIN SHOWN								t1
	0.05	0.02											PULSE TRAIN SHOWN								t1
	0.05												READ TIME AT t1									t2
													READ TIME AT t1									t2
													TJ(pk) ± TC = P(pk) RθJC(t)
TRANSIENT	0.03			0.01									TJ(pk) ± TC = P(pk) RθJC(t)							DUTY CYCLE, D = t1/t2
	0.02	SINGLE PULSE																		DUTY CYCLE, D = t1/t2
	0.02	SINGLE PULSE
	0.01
r(t),	0.01										2.0				10					100			500 700 1000
r(t),	0.02	0.03	0.05	0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200	300	500 700 1000	2000

t, TIME (ms)

Figure 13. Thermal Response

4	Motorola Bipolar Power Transistor Device Data

MJ14002 MJ14001 MJ14003

PACKAGE DIMENSIONS

±T±

SEATING

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

PLANE

Y14.5M, 1982.

D 2 PL

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

0.30 (0.012) M

DIM

MIN

MAX

MIN

MAX

1.530 REF

38.86 REF

±Y±

0.990

1.050

25.15

26.67

0.250

0.335

6.35

8.51

0.057

0.063

1.45

1.60

0.060

0.070

1.53

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

0.760

0.830

19.31

21.08

0.25 (0.010) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 197A±05

TO±204AE (TO±3)

ISSUE J

Motorola Bipolar Power Transistor Device Data

MJ14002 MJ14001 MJ14003

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
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