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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3055A/D

Complementary Silicon

High-Power Transistors

. . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc±to±dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955.

Current±Gain Ð Bandwidth±Product @ I C = 1.0 Adc fT = 0.8 MHz (Min) ± NPN

=2.2 MHz (Min) ± PNP

Safe Operating Area Ð Rated to 60 V and 120 V, Respectively

*MAXIMUM RATINGS

 

 

2N3055A

 

MJ15015

 

Rating

Symbol

MJ2955A

 

MJ15016

Unit

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

 

120

Vdc

Collector±Base Voltage

VCBO

100

 

200

Vdc

Collector±Emitter Voltage Base

VCEV

100

 

200

Vdc

Reversed Biased

 

 

 

 

 

 

 

 

 

 

 

Emitter±Base Voltage

VEBO

 

7.0

Vdc

Collector Current Ð Continuous

IC

 

15

Adc

Base Current

IB

 

7.0

Adc

Total Device Dissipation @ TC = 25_C

PD

115

 

180

Watts

Derate above 25_C

 

0.65

 

1.03

W/_C

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 65 to +200

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Max

Unit

 

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

1.52

0.98

_C/W

* Indicates JEDEC Registered Data. (2N3055A)

 

 

 

 

 

 

 

 

(W)

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

150

 

 

 

 

 

 

 

 

 

 

 

 

 

MJ15015

 

 

 

POWER

 

 

 

 

 

MJ15016

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, AVERAGE

50

 

 

2N3055A

 

 

 

 

 

 

 

MJ2955A

 

 

 

 

 

D(AV)

 

 

 

 

 

 

 

 

 

P

0

 

 

 

 

 

 

 

 

 

25

50

75

100

125

150

175

200

 

0

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

 

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

NPN

2N3055A MJ15015*

MJ2955A

PNP

MJ15016*

*Motorola Preferred Device

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60, 120 VOLTS

115, 180 WATTS

CASE 1±07 TO±204AA (TO±3)

Motorola, Inc. 1995

2N3055A

MJ15015

MJ2955A

MJ15016

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*Collector±Emitter Sustaining Voltage

 

 

2N3055A, MJ2955A

VCEO(sus)

60

Ð

Vdc

 

(IC = 200 mAdc, IB = 0)

 

 

 

MJ15015, MJ15016

 

120

Ð

 

 

Collector Cutoff Current

 

 

 

 

ICEO

 

 

mAdc

 

(VCE = 30 Vdc, VBE(off) = 0 Vdc)

 

 

2N3055A, MJ2955A

 

Ð

0.7

 

 

(VCE = 60 Vdc, VBE(off) = 0 Vdc)

 

 

MJ15015, MJ15016

 

Ð

0.1

 

 

*Collector Cutoff Current

 

 

 

2N3055A, MJ2955A

ICEV

Ð

5.0

mAdc

 

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

 

 

MJ15015, MJ15016

 

Ð

1.0

 

 

Collector Cutoff Current

 

 

 

 

ICEV

 

 

mAdc

 

(VCEV = Rated Value, VBE(off) = 1.5 Vdc,

 

 

2N3055A, MJ2955A

 

Ð

30

 

 

TC = 150_C)

 

 

 

MJ15015, MJ15016

 

Ð

6.0

 

 

Emitter Cutoff Current

 

 

 

2N3055A, MJ2955A

IEBO

Ð

5.0

mAdc

 

(VEB = 7.0 Vdc, IC = 0)

 

 

 

MJ15015, MJ15016

 

Ð

0.2

 

 

*SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

IS/b

 

 

Adc

 

(t = 0.5 s non±repetitive)

 

 

 

2N3055A, MJ2955A

 

1.95

Ð

 

 

(VCE = 60 Vdc)

 

 

 

MJ15015, MJ15016

 

3.0

Ð

 

 

*ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

 

 

hFE

 

 

Ð

 

(IC = 4.0 Adc, VCE = 2.0 Vdc)

 

 

 

 

10

70

 

 

(IC = 4.0 Adc, VCE = 4.0 Vdc)

 

 

 

 

20

70

 

 

(IC = 10 Adc, VCE = 4.0 Vdc)

 

 

 

 

5.0

Ð

 

 

Collector±Emitter Saturation Voltage

 

 

 

VCE(sat)

 

 

Vdc

 

(IC = 4.0 Adc, IB = 400 mAdc)

 

 

 

 

Ð

1.1

 

 

(IC = 10 Adc, IB = 3.3 Adc)

 

 

 

 

 

Ð

3.0

 

 

(IC = 15 Adc, IB = 7.0 Adc)

 

 

 

 

 

Ð

5.0

 

 

Base±Emitter On Voltage

 

 

 

 

VBE(on)

0.7

1.8

Vdc

 

(IC = 4.0 Adc, VCE = 4.0 Vdc)

 

 

 

 

 

 

 

 

*DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current±Gain Ð Bandwidth Product

 

 

2N3055A, MJ15015

fT

0.8

6.0

MHz

 

(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

 

 

MJ2955A, MJ15016

 

2.2

18

 

 

Output Capacitance

 

 

 

 

Cob

60

600

pF

 

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

 

 

 

*SWITCHING CHARACTERISTICS (2N3055A only)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RESISTIVE LOAD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

 

 

 

 

td

Ð

0.5

μs

 

Rise Time

 

 

 

(VCC = 30 Vdc, IC = 4.0 Adc,

t

Ð

4.0

μs

 

 

 

 

 

IB1

= IB2 = 0.4 Adc,

r

 

 

 

 

Storage Time

 

 

 

ts

Ð

3.0

μs

 

 

 

 

tp = 25

μs Duty Cycle v 2%

 

Fall Time

 

 

 

 

 

tf

Ð

6.0

μs

 

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%.

 

 

 

 

 

 

* Indicates JEDEC Registered Data. (2N3055A)

 

 

 

 

 

 

 

2

Motorola Bipolar Power Transistor Device Data

 

200

 

 

 

 

 

 

 

 

 

 

100

 

 

 

TJ = 150°C

 

 

 

 

GAIN

70

 

 

 

 

 

 

 

 

 

50

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

25°C

 

 

 

 

 

 

VCE = 4.0 V

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

7

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

2

0.3 0.5

0.7

1

2

3

5

7

10

15

 

0.2

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

Figure 2. DC Current Gain

 

3.5

 

 

 

 

 

 

 

 

 

 

 

3

 

TC = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(VOLTS)

2.5

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

 

 

 

 

 

VBE(sat) @ IC/IB = 10

 

 

 

 

 

 

V,

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

VBE(on) @ VCE = 4 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

VCE(sat) @ IC/IB = 10

 

 

0.3

0.5

0.7

1

2

3

5

7

10

20

 

0.2

 

2N3055A

MJ15015

MJ2955A

MJ15016

(VOLTS)

2.8

 

 

 

 

 

 

 

TJ = 25°C

2.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

IC = 1 A

 

 

4 A

 

8 A

 

 

, COLLECTOR±EMITTER

1.6

 

 

 

 

 

1.2

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

V

0

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

 

 

0.005

IB, BASE CURRENT (AMP)

Figure 3. Collector Saturation Region

(MHz)

10

 

 

 

 

 

 

 

 

 

 

 

PRODUCT

5.0

 

MJ2955A

 

 

 

 

 

MJ15016

 

 

 

BANDWIDTH

2.0

 

 

 

 

 

 

 

2N3055A

 

 

 

Ð

 

 

 

 

 

 

 

MJ15015

 

 

 

,CURRENT±GAIN

 

 

 

 

 

1.0

 

 

 

 

 

0.1

0.2

0.3

0.5

1.0

2.0

T

f

 

 

 

 

 

 

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMPS)

Figure 4. ªOnº Voltages

Figure 5. Current±Gain Ð Bandwidth Product

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7

VCC = 30 V

 

 

 

 

 

 

 

 

 

 

 

 

VCC

 

5

IC/IB = 10

 

 

 

 

 

 

 

 

 

 

 

 

 

3

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

+ 30 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

( μs)

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7.5 Ω

 

 

 

 

 

 

tr

 

 

 

 

 

+13 V

30

Ω

TIMEt,

0.7

 

 

 

 

 

 

 

 

 

 

 

25

μs

 

 

SCOPE

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

±11 V

 

 

1N6073

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

td

 

 

 

 

 

tr, tf 10 ns

 

 

±5 V

 

 

 

 

 

 

 

 

 

 

 

 

DUTY CYCLE = 1.0%

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

0.3

0.5

0.7

1

2

3

5

7

10

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

 

Figure 6. Switching Times Test Circuit

Figure 7. Turn±On Time

(Circuit shown is for NPN)

Motorola Bipolar Power Transistor Device Data

3

2N3055A

MJ15015

 

MJ2955A

MJ15016

 

 

10

 

 

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

μs)

2

 

 

 

 

ts

 

 

 

 

 

 

 

tf

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

 

t, TIME

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

0.5

VCC = 30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

IC/IB = 10

 

 

 

 

 

 

 

 

 

IB1 = IB2

 

 

 

 

 

 

 

 

 

0.2

TJ = 25

°

 

 

 

 

 

 

 

 

 

0.1

C

 

 

 

 

 

 

 

 

 

0.3

0.5

0.7

1

2

3

5

7

10

15

 

0.2

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

Figure 8. Turn±Off Times

 

400

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

2N3055A

 

(pF)

200

 

 

Cib

 

 

 

 

MJ15015

 

 

 

 

 

 

 

 

MJ2955A

 

C, CAPACITANCE

 

 

 

 

 

 

 

 

MJ15016

 

100

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

Cob

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

20

2.0

5.0

10

20

50

100

200

500

1000

 

1.0

 

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

 

Figure 9. Capacitances

COLLECTOR CUT±OFF REGION

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

PNP

 

 

 

10,000

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

VCE = 30 V

 

 

 

 

 

 

 

 

 

VCE = 30 V

 

 

 

 

 

 

A)

1000

 

 

 

 

 

 

 

A)

 

100

 

 

 

 

 

 

 

 

(μ

 

 

 

 

 

 

 

 

(μ

 

 

 

 

 

 

 

 

 

 

CURRENT

100

 

 

 

 

 

 

 

CURRENT

 

10

TJ = 150°C

 

 

 

 

 

 

TJ = 150°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

COLLECTOR

 

 

 

 

 

 

 

COLLECTOR

 

 

100°C

 

 

 

 

 

 

 

100°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = ICES

 

 

 

1.0

 

 

IC = ICES

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REVERSE

 

FORWARD

 

 

 

 

,

 

REVERSE

FORWARD

 

 

 

,

 

 

 

 

 

 

 

 

 

 

C

0.1

 

 

 

C

 

0.01

 

25°C

 

 

 

 

 

 

I

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

0.01

 

25°C

 

 

 

 

 

 

0.001

 

 

 

 

 

 

 

 

 

+ 0.1

0

± 0.1

± 0.2

± 0.3

± 0.4

± 0.5

 

 

± 0.1

0

+ 0.1

+ 0.2

+ 0.3

+ 0.4

+ 0.5

 

+ 0.2

 

 

± 0.2

 

 

 

VBE, BASE±EMITTER VOLTAGE (VOLTS)

 

 

 

 

 

 

VBE, BASE±EMITTER VOLTAGE (VOLTS)

 

 

 

 

 

Figure 10. 2N3055A, MJ15015

 

 

 

 

 

 

Figure 11. MJ2955A, MJ15016

 

 

 

20

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

(AMPS)

 

 

 

 

 

 

30 μs

 

(AMP)

 

10

 

 

 

 

 

 

0.1 ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

100 μs

 

CURRENT

 

5.0

 

 

 

 

 

 

 

 

5

 

 

 

 

 

1 ms

 

 

 

 

 

 

 

 

 

1.0 ms

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

,COLLECTOR

 

 

 

 

 

 

 

 

,COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

BONDING WIRE LIMIT

 

 

100 ms

 

 

1.0

 

BONDING WIRE LIMIT

 

 

100 ms

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

THERMAL LIMIT @ TC = 25°C

 

dc

 

 

0.5

 

THERMAL LIMIT @ T

= 25°C

 

 

 

C

 

(SINGLE PULSE)

 

 

 

 

C

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

(SINGLE PULSE)

 

 

 

 

I

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

SECOND BREAKDOWN LIMIT

 

 

 

 

 

 

 

SECOND BREAKDOWN LIMIT

 

dc

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

10

20

 

 

60

100

 

 

0.2

15

20

30

 

60

 

100

120

 

 

 

 

 

 

 

 

 

 

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

 

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 12. Forward Bias Safe Operating Area

Figure 13. Forward Bias Safe Operating Area

2N3055A, MJ2955A

MJ15015, MJ15016

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 12 and 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1.

4

Motorola Bipolar Power Transistor Device Data

2N3055A MJ15015 MJ2955A MJ15016

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

5

2N3055A MJ15015 MJ2955A MJ15016

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

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2N3055A/D

*2N3055A/D*

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