Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

MJD47REV

.PDF

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

188.7 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Power Transistors

DPAK For Surface Mount Applications

Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (ª±1º Suffix)

•Lead Formed Version in 16 mm Tape and Reel (ªT4º Suffix)

•Electrically Similar to Popular TIP47, and TIP50

•250 and 400 V (Min) Ð V CEO(sus)

•1 A Rated Collector Current

MAXIMUM RATINGS

Rating	Symbol	MJD47		MJD50	Unit

Collector±Emitter Voltage	VCEO	250		400	Vdc
Collector±Base Voltage	VCB	350		500	Vdc
Emitter±Base Voltage	VEB		5		Vdc
Collector Current Ð Continuous	IC		1		Adc
Peak			2

Base Current	IB		0.6		Adc
Total Power Dissipation @ TC = 25_C	PD		15		Watts
Derate above 25_C			0.12		W/_C

Total Power Dissipation* @ TA = 25_C	PD		1.56		Watts
Derate above 25_C		0.0125			W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic		Symbol		Max			Unit

Thermal Resistance, Junction to Case		RθJC		8.33			_C/W
Thermal Resistance, Junction to Ambient*		RθJA		80			_C/W
Lead Temperature for Soldering Purpose			TL	260			_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic			Symbol	Min	Max		Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (1) MJD47			VCEO(sus)	250	Ð		Vdc
(IC = 30 mAdc, IB = 0)	MJD50			400	Ð
Collector Cutoff Current			ICEO				mAdc
(VCE = 150 Vdc, IB = 0)	MJD47			Ð	0.2
(VCE = 300 Vdc, IB = 0)	MJD50			Ð	0.2
* When surface mounted on minimum pad sizes recommended.						(continued)
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Order this document by MJD47/D

MJD47*

MJD50*

*Motorola Preferred Device

NPN SILICON

POWER TRANSISTORS

1 AMPERE

250, 400 VOLTS

15 WATTS

CASE 369A±13

CASE 369±07

MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS

0.190	4.826
			0.165	4.191
		0.07	1.8
			0.118	3.0
0.243	0.063	1.6
0.243	6.172		inches
			inches
				mm

Motorola, Inc. 1995

MJD47 MJD50

ELECTRICAL CHARACTERISTICS ± continued (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min	Max	Unit

OFF CHARACTERISTICS Ð continued

Collector Cutoff Current		ICES			mAdc
(VCE = 350 Vdc, VBE = 0)	MJD47		Ð	0.1
(VCE = 500 Vdc, VBE = 0)	MJD50		Ð	0.1
Emitter Cutoff Current		IEBO	Ð	1	mAdc
(VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS (1)

DC Current Gain		hFE			Ð
(IC = 0.3 Adc, VCE = 10 Vdc)			30	150
(IC = 1 Adc, VCE = 10 Vdc)			10	Ð
Collector±Emitter Saturation Voltage		VCE(sat)	Ð	1	Vdc
(IC = 1 Adc, IB = 0.2 Adc)
Base±Emitter On Voltage		VBE(on)	Ð	1.5	Vdc
(IC = 1 Adc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS

Current Gain Ð Bandwidth Product		fT	10	Ð	MHz
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)
Small±Signal Current Gain		hfe	25	Ð	Ð
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.

TYPICAL CHARACTERISTICS

PD, POWER DISSIPATION (WATTS)

TA TC 2.5 25

2 20

1.5 15

1 10

0.5 5

0 0

TURN±ON PULSE

VCC

APPROX

+11 V

Vin

SCOPE

Vin 0

TA (SURFACE

MOUNT)

VEB(off)

Cjd << Ceb

± 4 V

APPROX

t1 ≤ 7 ns

+11 V

10 < t2 < 500 μs

t3 < 15 ns

DUTY CYCLE ≈ 2%

APPROX ±9 V

100

125

150

RB and RC VARIED TO OBTAIN

TURN±OFF PULSE

T, TEMPERATURE (°C)

DESIRED CURRENT LEVELS.

Figure 1. Power Derating

Figure 2. Switching Time Equivalent Circuit

2	Motorola Bipolar Power Transistor Device Data

																MJD47			MJD50
	200										1.4
	100						VCE = 10 V				1.2
	100	TJ = 150°C									1.2
GAINCURRENTDC,	10	TJ = 150°C								(VOLTS)VOLTAGEV,
	60										1
	40										1
	40	25°C									0.8		VBE(sat) @ IC/IB = 5 V
											0.8
	20	± 55°C													VBE(on) @ VCE = 4 V
		± 55°C									0.6				VBE(on) @ VCE = 4 V
											0.6
FE											0.4				TJ = 25°C
h	6
	6
	4										0.2			VCE(sat) @ IC/IB = 5 V
														VCE(sat) @ IC/IB = 5 V
	2	0.04	0.06	0.1	0.2	0.4	0.6	1	2		0	0.04	0.06	0.1	0.2	0.4	0.6	1	2
	0.02	0.04	0.06	0.1	0.2	0.4	0.6	1	2		0.02	0.04	0.06	0.1	0.2	0.4	0.6	1	2
			IC, COLLECTOR CURRENT (AMPS)										IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain

Figure 4. ªOnº Voltages

		1
		0.7	D = 0.5
	RESISTANCE(NORMALIZED)	0.5
r(t), TRANSIENT THERMAL		0.3	0.2
		0.2	0.1
			0.1													P(pk)
		0.1	0.05								RθJC(t) = r(t) RθJC					P(pk)
		0.1									RθJC = 8.33°C/W MAX
		0.07									RθJC = 8.33°C/W MAX
		0.07	0.02								D CURVES APPLY FOR POWER
		0.05		0.01							PULSE TRAIN SHOWN						t1
				0.01							READ TIME AT t1						t1
		0.03	SINGLE PULSE								READ TIME AT t1						t2
		0.02									TJ(pk) ± TC = P(pk) θJC(t)						DUTY CYCLE, D = t1/t2
		0.02															DUTY CYCLE, D = t1/t2
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500	1 k

t, TIME (ms)

Figure 5. Thermal Response

	5
(AMP)	2		1 ms		100 μs
	1		1 ms		500 μs
	1
CURRENT	0.5	TC ≤ 25°C		dc
				dc
	0.2

,COLLECTOR
	0.1		SECOND BREAKDOWN LIMIT
	0.05		THERMAL LIMIT @ 25°C
	0.05		WIRE BOND LIMIT
			WIRE BOND LIMIT
	0.02				MJD47
C	0.02	CURVES APPLY BELOW			MJD47
I		CURVES APPLY BELOW			MJD50
	0.01	RATED VCEO			MJD50
	0.005	10	20	50	100	200	300	500
	5	10	20	50	100	200	300	500

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 6. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

Motorola Bipolar Power Transistor Device Data

MJD47		MJD50
	1								5
	0.5				TJ = 25°C								t
	0.5				VCC = 200 V				2				s
					VCC = 200 V				2
				tr	IC/IB = 5
μs)	0.2			tr				μs)	1					TJ = 25°C
μs)								μs)						TJ = 25°C
(				td				(						VCC = 200 V
TIME	0.1			td				TIME	0.5					VCC = 200 V
TIME								TIME						IC/IB = 5
t,	0.05							t,
	0.05								0.2				tf
									0.2				tf
	0.02								0.1
	0.01								0.05
	0.02	0.05	0.1	0.2	0.5	1	2		0.02	0.05	0.1	0.2	0.5	1	2

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 7. Turn±On Time	Figure 8. Turn-Off Time

4	Motorola Bipolar Power Transistor Device Data

MJD47 MJD50

PACKAGE DIMENSIONS

			±T±	SEATING
				PLANE
	B		C
V	R		E
	4			Z
			A	Z
S			A
S
1	2	3		U
			K	U
			K
F			J
		L	H
			H

D 2 PL

G	0.13 (0.005) M T

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.235	0.250	5.97	6.35
B	0.250	0.265	6.35	6.73
C	0.086	0.094	2.19	2.38
D	0.027	0.035	0.69	0.88
E	0.033	0.040	0.84	1.01
F	0.037	0.047	0.94	1.19
G	0.180 BSC		4.58 BSC
H	0.034	0.040	0.87	1.01
J	0.018	0.023	0.46	0.58
K	0.102	0.114	2.60	2.89
L	0.090 BSC		2.29 BSC
R	0.175	0.215	4.45	5.46
S	0.020	0.050	0.51	1.27
U	0.020	±±±	0.51	±±±
V	0.030	0.050	0.77	1.27
Z	0.138	±±±	3.51	±±±

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

			CASE 369A±13
			ISSUE W
	B		C	NOTES:
				NOTES:
V	R		E	1. DIMENSIONING AND TOLERANCING PER ANSI
V	R		E	2.	Y14.5M, 1982.
				2.	CONTROLLING DIMENSION: INCH.
	4							INCHES		MILLIMETERS
	4				DIM		MIN		MAX	MIN	MAX
					DIM		MIN		MAX	MIN	MAX
		A			A		0.235		0.250	5.97	6.35
		A			B		0.250		0.265	6.35	6.73
1	2	3			C		0.086		0.094	2.19	2.38
S					D		0.027		0.035	0.69	0.88
S					E		0.033		0.040	0.84	1.01
±T±					F		0.037		0.047	0.94	1.19
±T±					G		0.090 BSC			2.29 BSC
SEATING		K			G		0.090 BSC			2.29 BSC
SEATING		K			H		0.034		0.040	0.87	1.01
PLANE					J		0.018		0.023	0.46	0.58
					J		0.018		0.023	0.46	0.58
					K		0.350		0.380	8.89	9.65
			J		R		0.175		0.215	4.45	5.46
F			J		S		0.050		0.090	1.27	2.28
F			H		V		0.030		0.050	0.77	1.27
			H		V		0.030		0.050	0.77	1.27
		D 3 PL			STYLE 1:
	G	0.13 (0.005) M	T		STYLE 1:
	G	0.13 (0.005) M	T			PIN 1.		BASE
							2.	COLLECTOR
							3.	EMITTER
							4.	COLLECTOR

CASE 369±07

ISSUE K

Motorola Bipolar Power Transistor Device Data

MJD47 MJD50

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ MJD47/D

*MJD47/D*

Соседние файлы в папке Bipolar

#
06.01.2022227.01 Кб2MJ3281A_.PDF
#
06.01.2022143.2 Кб2MJ410REV.PDF
#
06.01.2022137.23 Кб2MJ413REV.PDF
#
06.01.2022122.44 Кб2MJ4502RE.PDF
#
06.01.2022197.51 Кб2MJD44H11.PDF
#
06.01.2022188.7 Кб2MJD47REV.PDF
#
06.01.2022277.09 Кб2MJD6036R.PDF
#
06.01.2022118.82 Кб2MJE1123R.PDF
#
06.01.2022311.59 Кб2MJE13002.PDF
#
06.01.2022319.05 Кб2MJE13005.PDF
#
06.01.2022345.91 Кб2MJE13007.PDF