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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3715/D

Silicon NPN Power Transistors

. . . designed for medium±speed switching and amplifier applications. These devices feature:

Total Switching Time at 3 A typically 1.15 μs

Gain Ranges Specified at 1 A and 3 A

Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A

Excellent Safe Operating Areas

Complement to 2N3791±92

NPN

2N3715

2N3716

10 AMPERE

POWER TRANSISTORS

SILICON NPN

60 ± 80 VOLTS

150 WATTS

CASE 1±07 TO±204AA (TO±3)

MAXIMUM RATINGS

Rating

Symbol

2N3715

2N3716

Unit

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

80

Volts

Collector±Base Voltage

VCB

80

100

Volts

Emitter±Base Voltage

VEB

7.0

7.0

Volts

Collector Current

IC

10

10

Amps

Base Current

IB

4.0

4.0

Amps

Power Dissipation

PD

150

150

Watts

Thermal Resistance

θJC

1.17

1.17

_C/W

Operating Junction and Storage Temperature Range

TJ, Tstg

± 65 to +200

_C

 

160

 

 

 

 

 

 

 

 

(WATTS)

140

 

 

 

 

 

 

 

 

120

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

100

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

, POWER

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

P

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

175

200

 

0

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

 

Figure 1. Power±Temperature Derating Curve

Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed.

REV 7

Motorola, Inc. 1995

 

 

 

 

 

 

 

 

 

 

 

 

 

2N3715

2N3716

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

 

Symbol

Min

Max

Unit

 

Emitter±Base Cutoff Current

 

 

 

 

 

 

IEBO

Ð

5.0

mAdc

 

(VEB = 7.0 Vdc)

 

 

 

 

 

 

All Types

 

 

 

 

 

 

Collector±Emitter Cutoff Current

 

 

 

 

 

 

 

ICEX

 

 

mAdc

 

(VCE = 80 Vdc, VBE = ±1.5 Vdc)

 

 

 

 

2N3715

 

 

Ð

1.0

 

 

(VCE = 100 Vdc, VBE = ±1.5 Vdc)

 

 

 

2N3716

 

 

Ð

1.0

 

 

(VCE = 60 Vdc, VBE = ±1.5 Vdc, TC = 150_C)

 

 

2N3715

 

 

Ð

10

 

 

(VCE = 80 Vdc, VBE = ±1.5 Vdc, TC = 150_C)

 

 

2N3716

 

 

Ð

10

 

 

Collector±Emitter Sustaining Voltage (1)

 

 

 

 

VCEO(sus)*

 

 

Vdc

 

(IC = 200 mAdc, IB = 0)

 

 

 

 

 

 

2N3715

 

 

60

Ð

 

 

 

 

 

 

 

 

 

 

 

2N3716

 

 

80

Ð

 

 

DC Current Gain (1)

 

 

 

 

 

 

 

 

hFE*

 

 

Ð

 

(IC = 1.0 Adc, VCE = 2.0 Vdc)

 

 

 

 

 

2N3715, 2N3716

 

 

50

150

 

 

(IC = 3.0 Adc, VCE = 2.0 Vdc)

 

 

 

 

 

2N3715, 2N3716

 

 

30

Ð

 

 

Collector±Emitter Saturation Voltage (1)

 

 

 

 

VCE(sat)*

Ð

0.8

Vdc

 

(IC = 5.0 Adc, IB = 0.5 Adc)

 

 

 

 

 

2N3715, 2N3716

 

 

 

 

 

 

Base±Emitter Saturation Voltage (1)

 

 

 

 

 

VBE(sat)*

Ð

1.5

Vdc

 

(IC = 5.0 Adc, IB = 0.5 Adc)

 

 

 

 

 

2N3715, 2N3716

 

 

 

 

 

 

Base±Emitter Voltage (1)

 

 

 

 

 

 

 

VBE*

Ð

1.5

Vdc

 

(IC = 3.0 Adc, VCE = 2.0 Vdc)

 

 

 

 

 

All Types

 

 

 

 

 

 

Small Signal Current Gain

 

 

 

 

 

 

 

 

hfe

4.0

Ð

Ð

 

(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz)

 

 

 

All Types

 

 

 

 

 

 

Switching Times (Figure 2)

 

 

 

 

 

 

 

 

 

Typ

 

μs

 

(IC = 5.0 A, IB1 = IB2 = 0.5 Adc)

 

 

 

 

 

 

 

 

 

 

 

 

Rise Time

 

 

 

 

 

 

 

 

 

 

tr

0.45

 

 

 

Storage Time

 

 

 

 

 

 

 

 

 

ts

0.3

 

 

 

Fall Time

 

 

 

 

 

 

 

 

 

 

tf

0.4

 

 

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TEST CIRCUIT

IC = 5 A, IB1 = IB2 = 0.5 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μ

f 150 cps

DUTY CYCLE 2%

 

1.5

 

 

 

 

 

 

 

 

ton ~ 30

s

 

 

 

 

 

 

 

 

 

 

 

 

+11.5 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WAVE SHAPE

 

 

 

 

 

ts

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

AT POINT A

 

 

μs)

0.7

 

 

 

 

 

 

 

 

± 9 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

toff

 

 

+ 30 V

 

TIMES

0.5

 

 

 

 

 

 

 

 

~ 4.8 ms

 

 

tf

 

 

 

 

 

 

~ 1.7 ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6 Ω

 

 

SWITCHING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

tr

 

 

 

 

 

 

100 Ω

 

20 Ω

4 W

 

 

 

 

 

 

 

 

 

 

 

 

 

900 Ω

 

 

0.2

 

 

 

 

 

 

 

 

1 W

A

1 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Hg RELAYS

 

900 Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB1 = IB2

 

 

 

 

 

 

 

 

 

 

 

100 Ω

 

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

+ 62 V

± 9 V

 

 

 

 

0.1

 

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

100 Ω ± 4 V

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 2. Typical Switching Times

Motorola Bipolar Power Transistor Device Data

3±13

2N3715

2N3716

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

7.0

2N3715, 2N3716

 

 

 

 

 

 

 

 

(AMPS)

5.0

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

1.0

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

0.3

TJ = 175°C

 

 

 

 

 

 

 

 

 

COLLECTOR

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

VCE = 2 V

 

0.1

 

 

 

 

± 40°C

 

 

 

SEE NOTES 1, 2

 

0.07

 

 

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

C

0.03

 

 

 

 

25°C

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1000

 

0.1

IB, BASE CURRENT (mA)

Figure 3. Collector Current versus Base Current

1000

 

 

 

 

 

 

700

 

 

 

 

 

 

500

 

 

 

 

 

 

300

VCE = 2 V

 

 

 

 

(mA)

200

SEE NOTE 2

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

CURRENT

 

 

 

 

 

70

 

 

 

 

 

50

 

 

 

 

 

30

 

 

 

 

 

BASE

20

TJ = 175°C

 

± 40°C

 

 

10

 

 

 

 

 

 

 

 

,

7.0

 

 

 

 

 

B

 

 

 

 

 

I

5.0

 

 

25°C

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

1.0

0.4

0.8

1.2

1.6

2.0

 

0

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 4. Base Current±Voltage Variations

 

10

 

 

 

 

 

(AMPS)

7

2N3715, 2N3716

 

 

 

 

5

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

CURRENT

 

 

 

 

 

2

 

 

 

VCE = 2 V

 

 

TJ = 175°C

 

± 40°C

SEE NOTE 2

 

1

 

 

 

COLLECTOR

 

 

 

 

 

0.7

25°C

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

,

 

 

 

 

 

 

C

0.2

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.4

0.8

1.2

1.6

2.0

 

0.1

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 5. Collector Current±Voltage Variations

NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175_C. NOTE 2. Pulse test: pulse width 200 μsec, duty cycle 1.5%.

3±14

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

 

 

 

2N3715

2N3716

SATURATION

 

1.4

 

 

 

 

 

 

 

 

 

 

TJ =

 

 

 

 

 

 

 

 

 

 

 

 

 

1.2

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

± 40°C

 

1.0

 

 

 

 

 

 

 

 

 

 

175°C

COLLECTOR±EMITTER

VOLTAGE (VOLTS)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SEE NOTE 2

0.8

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

IC = 5 A

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

IC = 3 A

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

CE(sat)

 

0.2

 

 

 

 

 

 

IC = 1 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

20

30

50

70

100

200

300

500

700

1000

2000

 

 

10

IB, BASE CURRENT (mA)

Figure 6. Collector±Emitter Saturation Voltage Variations

 

 

1.4

 

 

 

 

 

 

 

 

 

 

 

BASE±EMITTERSATURATION

 

1.2

 

 

 

 

 

 

 

 

 

IC = 5 A

 

VOLTAGE (VOLTS)

1.0

 

 

 

 

 

 

 

 

IC = 3 A

 

 

0.8

 

 

 

 

 

 

IC = 1 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

TJ =

,

 

 

 

 

 

 

 

 

 

 

25

°

 

 

 

 

 

 

 

 

 

 

 

BE(sat)

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

± 40°C

 

0.2

 

 

 

 

 

 

 

 

 

175°C

V

 

 

 

 

 

 

 

 

 

 

 

SEE NOTE 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

20

30

50

70

100

200

300

500

700

1000

2000

 

 

10

IB, BASE CURRENT (mA)

Figure 7. Base±Emitter Saturation Voltage Variations

 

10

 

 

 

 

 

100

 

7.0

 

 

 

 

 

50

(mA)

5.0

 

 

 

 

(mA)

 

 

 

 

30

 

 

 

 

 

3.0

VCE = VCEO ± 20 V

 

 

 

20

CURRENT

 

 

 

CURRENT

 

 

 

10

2.0

SEE NOTE 2

 

 

 

1.0

 

 

 

 

5.0

 

 

 

 

 

, COLLECTOR

 

 

 

 

, COLLECTOR

3.0

 

 

 

 

 

0.7

 

 

 

 

2.0

0.5

TJ = 175°C

 

 

1.0

0.3

 

 

 

 

0.5

C

0.2

 

 

 

 

C

0.3

I

 

TJ = 100°C

 

 

I

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

REVERSE

 

FORWARD

 

 

0.1

 

 

 

0.1

 

± 0.4

± 0.2

0

0.2

0.4

 

± 0.6

 

VBE, BASE±EMITTER VOLTAGE (VOLTS)

 

TJ = 175°C

 

 

 

 

 

TJ = 100°C

 

VCE = VCEO ± 20 V

 

 

SEE NOTE 2

 

 

 

 

1

10

100

1000

10,000

100,000

 

RBE, EXTERNAL BASE±EMITTER RESISTANCE (OHMS)

Figure 8. Collector Current versus

Figure 9. Collector Current versus

Base±Emitter Voltage

Base±Emitter Resistance

Motorola Bipolar Power Transistor Device Data

3±15

2N3715

2N3716

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

°

 

 

 

 

 

 

IC ± ICBO

 

 

 

 

 

 

 

 

TJ = 175 C

 

 

 

 

 

h

) I

 

GAIN

150

 

 

 

 

 

 

 

 

 

 

 

 

FE + I

 

 

 

 

 

 

 

 

 

 

 

 

 

B

CBO

 

, CURRENT

100

 

 

 

 

 

25°C

 

 

 

 

 

VCE = 2 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

± 40°C

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.01

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

 

Figure 10. Current Gain Variations

(mc)

8

 

 

 

 

 

 

 

 

PRODUCT

6

 

 

 

 

 

 

 

 

GAIN Ð BANDWIDTH

4

 

 

 

 

 

 

 

 

2

 

 

 

 

 

VCE = 6 V

 

 

τf , CURRENT

 

 

 

 

 

 

 

 

0

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

 

0.1

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Current Gain Ð Bandwidth Product versus Collector Current

SAFE OPERATING AREAS

IC, COLLECTOR CURRENT (AMPS)

10

 

 

 

7

DC to 5 ms

50 μs

 

5

500

μs

 

 

μs

3

 

250

 

1 ms

 

2

 

 

 

1

0.7

0.5

0.3

0.2

0.1

0

10

20

30

40

50

60

70

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 12. 2N3715

IC, COLLECTOR CURRENT (AMPS)

10

 

 

7

DC to 5 ms

50 μs

5

 

 

250 μs

 

 

3

500 μs

 

2

 

 

1 ms

1

0.7

0.5

0.3

0.2

0.1

0

10

20

30

40

50

60

70

80

90

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

Figure 13. 2N3716

The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector±emitter

short. (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TJ, the power±temperature derating curve must be observed for both steady state and pulse power conditions.

3±16

Motorola Bipolar Power Transistor Device Data

2N3715 2N3716

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

 

2N3715/D

*2N3715/D*

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