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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUH100/D

BUH100

Designer's Data Sheet

SWITCHMODE NPN Silicon

Planar Power Transistor

POWER TRANSISTOR

10 AMPERES

700 VOLTS

100 WATTS

The BUH100 has an application specific state±of±art die designed for use in 100 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current during either the start±up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•Improved Efficiency Due to the Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

•Robustness Thanks to the Technology Developed to Manufacture this Device

•Motorola ª6 SIGMAº Philosophy Provides Tight and Reproducible Parametric Distributions

MAXIMUM RATINGS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	400	Vdc
Collector±Base Breakdown Voltage	VCBO	700	Vdc
Collector±Emitter Breakdown Voltage	VCES	700	Vdc
Emitter±Base Voltage	VEBO	10	Vdc
Collector Current Ð Continuous	IC	10	Adc
Ð Peak (1)	ICM	20
Base Current Ð Continuous	IB	4	Adc
Base Current Ð Peak (1)	IBM	10
*Total Device Dissipation @ TC = 25_C	PD	100	Watt
*Derate above 25°C		0.8	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance			_C/W
Ð Junction to Case	RqJC	1.25
Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes:	TL	260	_C
1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

BUH100

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage			VCEO(sus)	400	460		Vdc
(IC = 100 mA, L = 25 mH)
Collector±Base Breakdown Voltage			VCBO	700	860		Vdc
(ICBO = 1 mA)
Emitter±Base Breakdown Voltage			VEBO	10	12.5		Vdc
(IEBO = 1 mA)
Collector Cutoff Current			ICEO			100	μAdc
(VCE = Rated VCEO, IB = 0)
Collector Cutoff Current		@ TC = 25°C	ICES			100	μAdc
(VCE = Rated VCES, VEB = 0)		@ TC = 125°C				1000
Collector Base Current		@ TC = 25°C	ICBO			100	μAdc
(VCB = Rated VCBO, VEB = 0)		@ TC = 125°C				1000
Emitter±Cutoff Current			IEBO			100	μAdc
(VEB = 9 Vdc, IC = 0)
ON CHARACTERISTICS

Base±Emitter Saturation Voltage		@ TC = 25°C	VBE(sat)		1	1.1	Vdc
(IC = 5 Adc, IB = 1 Adc)
Collector±Emitter Saturation Voltage		@ TC = 25°C	VCE(sat)		0.37	0.6	Vdc
(IC = 5 Adc, IB = 1 Adc)		@ TC = 125°C			0.37	0.6
(IC = 7 Adc, IB = 1.5 Adc)		@ TC = 25°C			0.5	0.75	Vdc
		@ TC = 125°C			0.6	1.5
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)		@ TC = 25°C	hFE	15	24		Ð
		@ TC = 125°C		16	28
DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)		@ TC = 25°C		10	15		Ð
		@ TC = 125°C		10	14.5
DC Current Gain (IC = 7 Adc, VCE = 5 Vdc)		@ TC = 25°C		8	12		Ð
		@ TC = 125°C		7	10.5
DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)		@ TC = 25°C		6	9.5		Ð
		@ TC = 125°C		4	8
DYNAMIC SATURATION VOLTAGE

Dynamic Saturation	IC = 5 Adc, IB1 = 1 Adc	@ TC = 25°C	VCE(dsat)		1.1		V
Voltage:	VCC = 300 V
Voltage:		@ TC = 125°C			2.1		V
μ		@ TC = 125°C			2.1		V
Determined 3 s after
rising IB1 reaches	IC = 7.5 Adc, IB1 = 1.5 Adc	@ TC = 25°C			1.7		V
90% of final IB1	IC = 7.5 Adc, IB1 = 1.5 Adc
90% of final IB1	VCC = 300 V	°			5		V
(See Figure 19)	VCC = 300 V	°
(See Figure 19)		@ TC = 125 C
DYNAMIC CHARACTERISTICS

Current Gain Bandwidth			fT		23		MHz
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance			Cob		100	150	pF
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance			Cib		1300	1750	pF
(VEB = 8 Vdc, f = 1 MHz)

2	Motorola Bipolar Power Transistor Device Data

BUH100

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

Turn±on Time

I = 1 Adc, I

= 0.2 Adc

@ TC = 25°C

ton

130

200

140

@ TC = 125 C

IB2 = 0.2 Adc

Turn±off Time

@ TC = 25°C

toff

6.8

μs

VCC

= 300 Vdc

@ TC = 125°C

8.5

Turn±on Time

I = 1 Adc, I

= 0.2 Adc

@ TC = 25°C

ton

140

200

150

@ TC = 125 C

IB2 = 0.4 Adc

Turn±off Time

@ TC = 25°C

toff

3.4

μs

VCC

= 300 Vdc

@ TC = 125°C

4.3

Turn±on Time

I = 5 Adc, I

= 1 Adc

@ TC = 25°C

ton

250

500

800

@ TC = 125 C

IB2 = 1 Adc

Turn±off Time

@ TC = 25°C

toff

2.9

3.5

μs

VCC

= 300 Vdc

@ TC = 125°C

3.6

Turn±on Time

I = 7.5 Adc, I

= 1.5 Adc

@ TC = 25°C

ton

500

700

900

@ TC = 125 C

IB2 = 1.5 Adc

Turn±off Time

@ TC = 25°C

toff

2.1

2.5

μs

= 300 Vdc

@ TC = 125°C

2.5

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

@ TC = 25°C

tfi

150

250

= 1 Adc

@ TC = 125°C

180

Storage Time

@ TC = 25°C

tsi

5.1

μs

IB1

= 0.2 Adc

@ TC = 125°C

5.8

IB2 = 0.2 Adc

Crossover Time

@ TC = 25°C

230

325

@ TC = 125°C

300

Fall Time

@ TC = 25°C

tfi

150

250

= 1 Adc

@ TC = 125°C

170

Storage Time

@ TC = 25°C

tsi

2.5

μs

IB1

= 0.2 Adc

@ TC = 125°C

2.8

IB2 = 0.5 Adc

Crossover Time

@ TC = 25°C

260

350

@ TC = 125°C

300

Fall Time

@ TC = 25°C

tfi

100

150

= 5 Adc

@ TC = 125°C

140

Storage Time

@ TC = 25°C

tsi

2.9

3.5

μs

IB1 = 1 Adc

@ TC = 125°C

4.6

IB2 = 1 Adc

Crossover Time

@ TC = 25°C

220

300

@ TC = 125°C

450

Fall Time

@ TC = 25°C

tfi

100

150

IC = 7.5 Adc

@ TC = 125°C

150

Storage Time

@ TC = 25°C

tsi

2.5

μs

IB1

= 1.5 Adc

@ TC = 125°C

2.5

IB2 = 1.5 Adc

Crossover Time

@ TC = 25°C

250

350

@ TC = 125°C

475

Motorola Bipolar Power Transistor Device Data

BUH100

TYPICAL STATIC CHARACTERISTICS

	100
					VCE = 1 V
GAIN		TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
	10			TJ = 25°C

FE
h
	1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	100
					VCE = 5 V
GAIN			TJ = 125°C
GAIN
, DC CURRENT	10		TJ = ± 20°C	TJ = 25°C
	10			TJ = 25°C

FE
h
	1
	0.01	0.1	1	10	100
		IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volt

	10
		IC/IB = 10
(VOLTS)	1
(VOLTS)
,VOLTAGE		T	J	= 25°C	°
			J		TJ = ± 20 C
	0.1				TJ = 125°C
CE	0.1				TJ = 125°C
V
	0.01	0.01
	0.001	0.01	0.1		1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
					VCE = 3 V
GAIN		TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
	10			TJ = 25°C

FE
h
	1
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volt

	10
		IC/IB = 5
(VOLTS)	1
(VOLTS)
,VOLTAGE			TJ = 25°C	TJ = ± 20°C
,VOLTAGE	0.1
CE	0.1			TJ = 125°C
CE
V
	0.01	0.01
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	1.5
		IC/IB = 5
(VOLTS)	1
(VOLTS)		TJ = ± 20°C
VOLTAGE		TJ = ± 20°C
VOLTAGE	0.5	T	J	= 25°C
,			J
BE
BE		TJ = 125°C
V

	0				0.1
	0.001	0.01			0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base±Emitter Saturation Region

4	Motorola Bipolar Power Transistor Device Data

BUH100

TYPICAL STATIC CHARACTERISTICS

	1.5
		IC/IB = 10
(VOLTS)	1
(VOLTS)			TJ = ± 20°C
VOLTAGE			TJ = ± 20°C
VOLTAGE	0.5		TJ = 25°C
,
BE			TJ = 125°C
BE
V
	0	0.01
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base±Emitter Saturation Region

	10000
		TJ = 25°C
		f(test) = 1 MHz
(pF)		Cib
(pF)	1000
CAPACITANCE	100	Cob
C,	100
C,
	10
	1	10	100
		VR, REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitance

	2
	TJ = 25°C			15 A
(VOLTS)	1.5			10 A
	1.5
			8 A
			8 A
VOLTAGE,	1		5 A
VOLTAGE,

			3 A
CE		2 A
V	0.5
	0.5
	VCE(sat)
	(IC = 1 A)
	0
	0.01	0.1	1	10

IB, BASE CURRENT (A)

Figure 8. Collector Saturation Region

	900
					TJ = 25°C
	800	BVCER @ 10 mA
(VOLTS)	700
(VOLTS)
BVCER	600
BVCER
	500
		BVCER(sus) @ 500 mA, 25 mH
	400		1000	10000
	10	100	1000	10000	100000
			RBE (Ω)

Figure 10. Resistive Breakdown

Motorola Bipolar Power Transistor Device Data

BUH100

TYPICAL SWITCHING CHARACTERISTICS

	2500
		IB1 = IB2
	2000	VCC = 300 V
	2000	PW = 40	μs
		PW = 40	μs
	1500		°			IC/IB = 10
(ns)	1500		TJ = 125 C
(ns)			TJ = 25°C
t, TIME			TJ = 25°C
t, TIME	1000
						125°C
	500
					25°C	IC/IB = 5
	0	0	2	4	6	8	10
		0	2	4	6	8	10

IC, COLLECTOR CURRENT (AMPS)

	10
			TJ = 125°C		IB1 = IB2
	8		TJ = 25°C		VCC = 300 V
					PW = 20 μs
( μs)	6		IC/IB		= 5
( μs)			IC/IB		= 5
t, TIME	4
	4
	2
		IC/IB = 10
	0
	0	2	4	6	8	10

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switching Time, ton

Figure 12. Resistive Switch Time, toff

	7				6
		IC/IB = 5	IB1 = IB2		5
		IC/IB = 5	VCC = 15 V		5
			VZ = 300 V
μs)	5		LC = 200 μH	μs)	4
(				(
t, TIME				t, TIME	3
t, TIME				t, TIME
	3				2
		TJ = 125°C			1
		TJ = 25°C
	1				0
	1	4	7	10

		IC/IB = 10	IB1 = IB2
		IC/IB = 10	VCC = 15 V
			VZ = 300 V
			LC = 200 μH
	TJ = 125°C
	TJ = 25°C
1	4	7	10

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, tsi	Figure 13 Bis. Inductive Storage Time, tsi

600
IB1 = IB2		TJ = 125°C
VCC = 15 V		TJ = 25°C
VZ = 300 V
LC = 200 μH			tc
400			tc
t, TIME (ns)			tfi
200
0
1	4	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

	800
		TJ = 125°C	I	= I		B2
		TJ = 25°C	B1			B2
		TJ = 25°C	V		= 15 V
			CC
	600		VZ = 300 V
			LC = 200 μH
(ns)			tc
(ns)
t, TIME	400
t, TIME			tfi
			tfi
	200
	0	4
	1	4	7			10

IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

6	Motorola Bipolar Power Transistor Device Data

BUH100

TYPICAL SWITCHING CHARACTERISTICS

	4								200
s)	3				IC = 5 A				150
TIME (μ	2								TIME(ns)
STORAGE	2								100
	I		= 7.5 A						, FALL
	I	C	= 7.5 A						fi
,		C			I	= I			t
si	1				I	= I			t
t	1				B1	B2			50
			TJ = 125°C		VCC = 15 V
			TJ = 125°C		VZ	= 300 V
			TJ = 25°C		LC = 200		μ	H
	0				LC = 200			H	0
	2		4	6	8				10

hFE, FORCED GAIN

			IC = 7.5 A
	IBoff = IB2			IC = 5 A
	VCC = 15 V						125°C
	VZ = 300 V					TJ =	125°C
	LC = 200 μH					TJ =	25°C
3	4	5	6	7	8	9	10
			hFE, FORCED GAIN

Figure 16. Inductive Storage Time

Figure 17. Inductive Fall Time

	800
	700	IB1 = IB2
	700	VCC = 15 V
(ns)		VZ = 300 V
(ns)	600	LC = 200 μH
TIME	600	LC = 200 μH
TIME	500						IC = 7.5 A
, CROSSOVER	500
	400
	300
c
t
	200				°		IC = 5 A
				TJ = 125 C
	100			TJ = 25°C
	3	4	5	6	7	8	9	10

hFE, FORCED GAIN

Figure 18. Inductive Crossover Time, tc

Motorola Bipolar Power Transistor Device Data

BUH100

TYPICAL SWITCHING CHARACTERISTICS

	VCE
	dyn 1 μs
		dyn 3 μs
0 V
	90% IB
	1 μs
IB	3	μs
	3	μs
		TIME

Figure 19. Dynamic Saturation Voltage

Measurements

10
9	IC					90% IC
8			tsi			tfi
7			tsi
7
6
5	Vclamp		10% Vclamp				10% IC
5	Vclamp		10% Vclamp			tc
4						tc
4
3	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 μF	150 Ω	100 Ω	MTP8P10	100 μF
1 μF	150 Ω	100 Ω	MTP8P10
	3 W	3 W
	3 W
MPF930			MTP8P10	RB1	VCE
MPF930			MUR105	RB1	IB1
	MPF930		MUR105		IB1
+10 V	MPF930			Iout	I
					B
				A
50 Ω			MJE210	RB2
				RB2

COMMON		150 Ω	MTP12N10
		150 Ω	MTP12N10		V(BR)CEO(sus)
	500 μF	3 W			V(BR)CEO(sus)
	500 μF				L = 10 mH
					L = 10 mH
				1 μF	RB2 = ∞
				1 μF	VCC = 20 Volts
					VCC = 20 Volts
±Voff					IC(pk) = 100 mA

IC PEAK

VCE PEAK

IB2
Inductive Switching	RBSOA
L = 200 μH	L = 500 μH
RB2 = 0	RB2 = 0
VCC = 15 Volts	VCC = 15 Volts
RB1 selected for	RB1 selected for
desired IB1	desired IB1

TYPICAL THERMAL RESPONSE

	1
					SECOND BREAKDOWN
FACTOR	0.8				DERATING
	0.8
	0.6
DERATING	0.6
		THERMAL DERATING
	0.4
POWER	0.4
POWER	0.2
	0.2
	0	40	60	80		120	140
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 21. Forward Bias Power Derating

8	Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based

on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21.

BUH100

TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

	100
(AMPS)	10	1 ms	10	μ	1 μs
(AMPS)	10		10	s
CURRENT		5 ms	EXTENDED
			EXTENDED
	1	DC		SOA
, COLLECTOR	1	DC
	0.1

C
I
	0.01
	10	100			1000

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 22. Forward Bias Safe Operating Area

	12
(AMPS)	10			GAIN ≥	5		TC ≤ 125°C
(AMPS)	10						LC = 2 mH
CURRENT	8
CURRENT	6
COLLECTOR	6
	4
							± 5 V
,	2
C
I
				0 V		±1.5 V
	0	300	400			600	700
	200	300	400	500		600	700	800

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

TYPICAL THERMAL RESPONSE

		1
TRANSIENT THERMAL RESISTANCE			0.5
			0.2
	(NORMALIZED)	0.1	0.1		P(pk)	RθJC(t) = r(t) RθJC
		0.1			P(pk)	RθJC(t) = r(t) RθJC
			0.05			RθJC = 1.25°C/W MAX
						D CURVES APPLY FOR POWER
					t1	PULSE TRAIN SHOWN
			0.02		t1	READ TIME AT t1
			0.02		t	READ TIME AT t1
					2	TJ(pk) ± TC = P(pk) RθJC(t)
			SINGLE PULSE		DUTY CYCLE, D = t1/t2
r(t),
r(t),
		0.01
		0.01	0.1	1	10	100	1000

t, TIME (ms)

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH100

Motorola Bipolar Power Transistor Device Data

BUH100

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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