MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3771/D
High Power NPN Silicon Power
Transistors
. . . designed for linear amplifiers, series pass regulators, and inductive switching applications.
• Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc Ð 2N3771
IS/b = 2.5 Adc @ VCE = 60 Vdc Ð 2N3772
*MAXIMUM RATINGS
Rating |
Symbol |
2N3771 |
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2N3772 |
Unit |
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Collector±Emitter Voltage |
VCEO |
40 |
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60 |
Vdc |
Collector±Emitter Voltage |
VCEX |
50 |
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80 |
Vdc |
Collector±Base Voltage |
VCB |
50 |
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100 |
Vdc |
Emitter±Base Voltage |
VEB |
5.0 |
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7.0 |
Vdc |
Collector Current Ð Continuous |
IC |
30 |
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20 |
Adc |
Peak |
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30 |
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30 |
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Base Current Ð Continuous |
IB |
7.5 |
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5.0 |
Adc |
Peak |
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15 |
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15 |
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Total Device Dissipation @ TC = 25_C |
PD |
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150 |
Watts |
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Derate above 25_C |
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0.855 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +200 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristics |
Symbol |
2N3771, 2N3772 |
Unit |
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Thermal Resistance, Junction to Case |
θJC |
1.17 |
_C/W |
* Indicates JEDEC Registered Data.
2N3771*
2N3772
*Motorola Preferred Device
20 and 30 AMPERE POWER TRANSISTORS NPN SILICON
40 and 60 VOLTS
150 WATTS
CASE 1±07 TO±204AA (TO±3)
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200 |
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(WATTS) |
175 |
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150 |
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DISSIPATION |
125 |
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100 |
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75 |
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, POWER |
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50 |
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D |
25 |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
2N3771 |
2N3772 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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*Collector±Emitter Sustaining Voltage (1) |
2N3771 |
VCEO(sus) |
40 |
Ð |
Vdc |
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(IC = 0.2 Adc, IB = 0) |
2N3772 |
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60 |
Ð |
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Collector±Emitter Sustaining Voltage |
2N3771 |
VCEX(sus) |
50 |
Ð |
Vdc |
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(IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms) |
2N3772 |
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80 |
Ð |
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Collector±Emitter Sustaining Voltage |
2N3771 |
VCER(sus) |
45 |
Ð |
Vdc |
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(IC = 0.2 Adc, RBE = 100 Ohms) |
2N3772 |
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70 |
Ð |
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*Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 30 Vdc, IB = 0) |
2N3771 |
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Ð |
10 |
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(VCE = 50 Vdc, IB = 0) |
2N3772 |
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Ð |
10 |
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(VCE = 25 Vdc, IB = 0) |
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*Collector Cutoff Current |
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ICEV |
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mAdc |
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(VCE = 50 Vdc, VEB(off) = 1.5 Vdc) |
2N3771 |
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Ð |
2.0 |
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(VCE = 100 Vdc, VEB(off) = 1.5 Vdc) |
2N3772 |
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Ð |
5.0 |
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(VCE = 45 Vdc, VEB(off) = 1.5 Vdc) |
2N6257 |
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Ð |
4.0 |
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(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) |
2N3771 |
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Ð |
10 |
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(VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) |
2N3772 |
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Ð |
10 |
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*Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 50 Vdc, IE = 0) |
2N3771 |
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Ð |
2.0 |
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(VCB = 100 Vdc, IE = 0) |
2N3772 |
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Ð |
5.0 |
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*Emitter Cutoff Current |
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IEBO |
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mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
2N3771 |
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Ð |
5.0 |
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(VBE = 7.0 Vdc, IC = 0) |
2N3772 |
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Ð |
5.0 |
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*ON CHARACTERISTICS |
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DC Current Gain (1) |
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hFE |
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Ð |
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(IC = 15 Adc, VCE = 4.0 Vdc) |
2N3771 |
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15 |
60 |
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(IC = 10 Adc, VCE = 4.0 Vdc) |
2N3772 |
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15 |
60 |
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(IC = 8.0 Adc, VCE = 4.0 Vdc) |
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(IC = 30 Adc, VCE = 4.0 Vdc) |
2N3771 |
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5.0 |
Ð |
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(IC = 20 Adc, VCE = 4.0 Vdc) |
2N3772 |
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5.0 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 15 Adc, IB = 1.5 Adc) |
2N3771 |
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Ð |
2.0 |
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(IC = 10 Adc, IB = 1.0 Adc) |
2N3772 |
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Ð |
1.4 |
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(IC = 30 Adc, IB = 6.0 Adc) |
2N3771 |
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Ð |
4.0 |
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(IC = 20 Adc, IB = 4.0 Adc) |
2N3772 |
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Ð |
4.0 |
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Base±Emitter On Voltage |
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VBE(on) |
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Vdc |
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(IC = 15 Adc, VCE = 4.0 Vdc) |
2N3771 |
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Ð |
2.7 |
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(IC = 10 Adc, VCE = 4.0 Vdc) |
2N3772 |
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Ð |
2.2 |
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(IC = 8.0 Adc, VCE = 4.0 Vdc) |
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*DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product |
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fT |
0.2 |
Ð |
MHz |
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(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz) |
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Small±Signal Current Gain |
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hfe |
40 |
Ð |
Ð |
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(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) |
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SECOND BREAKDOWN |
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Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non±repetitive) |
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IS/b |
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Adc |
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(VCE = 40 Vdc) |
2N3771 |
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3.75 |
Ð |
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(VCE = 60 Vdc) |
2N3772 |
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2.5 |
Ð |
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* Indicates JEDEC Registered Data.
(1) Pulse Test: 300 μs, Rep. Rate 60 cps.
2 |
Motorola Bipolar Power Transistor Device Data |
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2N3771 |
2N3772 |
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1.0 |
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EFFECTIVE TRANSIENT THERMAL |
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0.7 |
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D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
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0.3 |
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0.2 |
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0.2 |
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0.1 |
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0.1 |
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0.05 |
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θJC(t) = r(t) θJC |
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P(pk) |
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0.07 |
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θJC = 0.875°C/W MAX |
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0.05 |
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0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.03 |
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0.01 |
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READ TIME AT t1 |
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t |
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r(t), |
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0.02 |
SINGLE PULSE |
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TJ(pk) ± TC = P(pk) θJC(t) |
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2 |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
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0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1000 |
2000 |
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0.02 |
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t, TIME (ms)
Figure 2. Thermal Response Ð 2N3771, 2N3772
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40 |
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(AMP) |
30 |
2N3771 |
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40 μs |
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20 |
2N3772, (dc) |
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100 μs |
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CURRENT |
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dc |
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10 |
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TC = 25°C |
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200 μs |
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COLLECTOR |
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7.0 |
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BONDING WIRE LIMITED |
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1.0 ms |
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5.0 |
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THERMALLY LIMITED |
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(SINGLE PULSE) |
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100 ms |
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SECOND BREAKDOWN LIMITED |
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, |
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CURVES APPLY BELOW RATED V |
CEO |
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C |
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I |
3.0 |
PULSE CURVES APPLY |
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500 ms |
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2N3771 |
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2.0 |
FOR ALL DEVICES |
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2N3772 |
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2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
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1.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 3. Active±Region Safe Operating Area
Ð 2N3771, 2N3772
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max) for pulse widths of 1 ms and less. When using Motorola
transistors, it is permissible to increase the pulse power limits until limited by TJ(max).
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VCC |
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10 |
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+ 30 V |
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VCC = 30 |
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5.0 |
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25 μs |
R |
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IC/IB = 10 |
V |
BE(off) |
= 5.0 V |
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2.0 |
° |
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C |
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TJ = 25 C |
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+11 V |
SCOPE |
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1.0 |
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RB |
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μs) |
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tr |
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0 |
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0.5 |
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( |
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D1 |
TIME |
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51 |
0.2 |
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± 9.0 V |
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t, |
0.1 |
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tr, tf ≤ 10 ns |
± 4 V |
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0.05 |
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td |
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DUTY CYCLE = 1.0% |
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RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS |
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0.02 |
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D1 MUST BE FAST RECOVERY TYPE, e.g.: |
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0.01 |
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1N5825 USED ABOVE IB ≈ 100 mA |
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3.0 |
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10 |
20 |
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0.3 |
0.5 0.7 |
1.0 |
2.0 |
5.0 |
7.0 |
30 |
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MSD6100 USED BELOW IB ≈ 100 mA |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 4. Switching Time Test Circuit |
Figure 5. Turn±On Time |
Motorola Bipolar Power Transistor Device Data |
3 |
2N3771 |
2N3772 |
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100 |
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50 |
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VCC = 30 V |
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20 |
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IC/IB = 10 |
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IB1 = IB2 |
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10 |
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TJ = 25°C |
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μs) |
5.0 |
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( |
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TIME |
2.0 |
ts |
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t, |
1.0 |
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0.5 |
tf |
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0.2 |
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0.1 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
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IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn±Off Time
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500 |
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300 |
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TJ = 150°C |
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VCE = 4.0 V |
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GAIN |
200 |
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25°C |
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100 |
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DC CURRENT |
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70 |
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50 |
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± 55°C |
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30 |
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, |
20 |
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FE |
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7.0 |
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5.0 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 8. DC Current Gain
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2000 |
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TJ = 25°C |
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(pF) |
1000 |
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Cib |
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C, CAPACITANCE |
700 |
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Cob |
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500 |
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300 |
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200 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 7. Capacitance
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2.0 |
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TJ = 25°C |
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VOLTAGE |
1.6 |
IC = 2.0 A |
5.0 A |
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10 A |
20 A |
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1.2 |
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, COLLECTOR±EMITTER |
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0.8 |
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0.4 |
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CE |
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0 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 9. Collector Saturation Region
4 |
Motorola Bipolar Power Transistor Device Data |
2N3771 2N3772
PACKAGE DIMENSIONS
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A |
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N |
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NOTES: |
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C |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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±T± |
SEATING |
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2. CONTROLLING DIMENSION: INCH. |
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E |
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PLANE |
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3. ALL RULES AND NOTES ASSOCIATED WITH |
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REFERENCED TO±204AA OUTLINE SHALL APPLY. |
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D 2 PL |
K |
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INCHES |
MILLIMETERS |
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0.13 (0.005) M |
T |
Q |
M |
Y |
M |
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DIM |
MIN |
MAX |
MIN |
MAX |
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U |
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A |
1.550 REF |
39.37 REF |
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±Y± |
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B |
±±± |
1.050 |
±±± |
26.67 |
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V |
L |
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C |
0.250 |
0.335 |
6.35 |
8.51 |
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2 |
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D |
0.038 |
0.043 |
0.97 |
1.09 |
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B |
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E |
0.055 |
0.070 |
1.40 |
1.77 |
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H |
G |
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G |
0.430 BSC |
10.92 BSC |
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1 |
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H |
0.215 BSC |
5.46 BSC |
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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L |
0.665 BSC |
16.89 BSC |
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±Q± |
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N |
±±± |
0.830 |
±±± |
21.08 |
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0.13 (0.005) M |
T |
Y |
M |
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Q |
0.151 |
0.165 |
3.84 |
4.19 |
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U |
1.187 BSC |
30.15 BSC |
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
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CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |
2N3771 2N3772
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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