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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ11012/D

High-Current Complementary

Silicon Transistors

. . . for use as output devices in complementary general purpose amplifier applications.

High DC Current Gain Ð h FE = 1000 (Min) @ IC ± 20 Adc

Monolithic Construction with Built±in Base Emitter Shunt Resistor

Junction Temperature to +200_C

MAXIMUM RATINGS

 

 

 

MJ11013

 

MJ11015

 

Rating

Symbol

MJ11012

MJ11014

 

MJ11016

Unit

 

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

90

 

120

Vdc

Collector±Base Voltage

VCB

60

90

 

120

Vdc

Emitter±Base Voltage

VEB

 

5

 

 

Vdc

Collector Current

IC

 

30

 

 

Adc

Base Current

IB

 

1

 

 

Adc

Total Device Dissipation @TC = 25_C

PD

 

200

 

 

Watts

Derate above 25_C @ TC = 100_C

 

 

1.15

 

 

W/_C

Operating Storage Junction

TJ, Tstg

 

± 55 to +200

 

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

0.87

_C/W

Maximum Lead Temperature for

TL

275

_C

Soldering Purposes for v 10 Seconds.

 

 

 

 

 

 

 

PNP

MJ11013

MJ11015

NPN

MJ11012

MJ11014 MJ11016*

*Motorola Preferred Device

30 AMPERE

DARLINGTON

POWER TRANSISTORS COMPLEMENTARY SILICON

60 ± 120 VOLTS

200 WATTS

CASE 1±07 TO±204AA (TO±3)

PNP

COLLECTOR

MJ11013

 

MJ11015

 

BASE

 

8.0 k

40

NPN

COLLECTOR

MJ11012

 

MJ11014

 

MJ11016

 

BASE

 

8.0 k

40

EMITTER

EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995

MJ11013

MJ11015

MJ11012

MJ11014

MJ11016

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristics

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage(1)

 

 

V(BR)CEO

 

 

Vdc

 

(IC = 100 mAdc, IB = 0)

 

 

MJ11012

 

60

Ð

 

 

 

 

 

 

MJ11013, MJ11014

 

90

Ð

 

 

 

 

 

 

MJ11015, MJ11016

 

120

Ð

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Leakage Current

 

 

ICER

 

 

mAdc

 

(VCE = 60 Vdc, RBE = 1k ohm)

 

MJ11012

 

Ð

1

 

 

(VCE = 90 Vdc, RBE = 1k ohm)

 

MJ11013, MJ11014

 

Ð

1

 

 

(VCE = 120 Vdc, RBE = 1k ohm)

 

MJ11015, MJ11016

 

Ð

1

 

 

(VCE = 60 Vdc, RBE = 1k ohm, TC = 150_C)

 

MJ11012

 

Ð

5

 

 

(VCE = 90 Vdc, RBE = 1k ohm, TC = 150_C)

 

MJ11013, MJ11014

 

Ð

5

 

 

(VCE = 120 Vdc, RBE = 1k ohm, TC = 150_C)

MJ11015, MJ11016

 

Ð

5

 

 

Emitter Cutoff Current

 

 

 

IEBO

Ð

5

mAdc

 

(VBE = 5 Vdc, IC = 0)

 

 

 

 

 

 

 

 

Collector±Emitter Leakage Current

 

 

ICEO

Ð

1

mAdc

 

(VCE = 50 Vdc, IB = 0)

 

 

 

 

 

 

 

 

ON CHARACTERISTICS(1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

 

hFE

 

 

Ð

 

(IC = 20 Adc,VCE = 5 Vdc)

 

 

 

 

1000

Ð

 

 

(IC = 30 Adc, VCE = 5 Vdc)

 

 

 

 

200

Ð

 

 

Collector±Emitter Saturation Voltage

 

 

VCE(sat)

 

 

Vdc

 

(IC = 20 Adc, IB = 200 mAdc)

 

 

 

Ð

3

 

 

(IC = 30 Adc, IB = 300 mAdc)

 

 

 

Ð

4

 

 

Base±Emitter Saturation Voltage

 

 

VBE(sat)

 

 

Vdc

 

(IC = 20 A, IB = 200 mAdc)

 

 

 

 

Ð

3.5

 

 

(IC = 30 A, IB = 300 mAdc)

 

 

 

 

Ð

5

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current±Gain Bandwidth Product

 

 

hfe

4

Ð

MHz

 

(IC = 10 A, VCE = 3 Vdc, f = 1 MHz)

 

 

 

 

 

 

 

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

 

 

 

 

 

 

2

Motorola Bipolar Power Transistor Device Data

hFE, DC CURRENT GAIN

 

 

 

 

 

 

 

 

 

 

MJ11013

MJ11015

MJ11012

MJ11014

MJ11016

30 k

 

 

PNP MJ11013, MJ11015

 

 

 

 

 

(NORMALIZED

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20 k

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

NPN MJ11012, MJ11014, MJ11016

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

10 k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7 k

 

 

 

 

 

 

 

 

 

 

GAIN

0.2

 

 

 

 

 

 

 

 

 

 

5 k

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

3 k

 

 

 

 

 

 

 

 

 

 

CURRENT

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2 k

 

 

 

 

 

 

 

 

 

 

 

0.02

 

PNP MJ11013, MJ11015

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NPN MJ11012, MJ11014, MJ11016

 

 

 

 

300

 

 

 

 

 

 

 

 

 

 

SMALL±SIGNAL,

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

700

VCE = 5 Vdc

 

 

 

 

 

 

 

 

0.005

VCE = 3 Vdc

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

IC = 10 mAdc

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

0.3

0.5

0.7

1

2

3

5

7

10

20

30

FE

10

20

30

50

70

100

200

300

500 700

1.0 k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

h

 

 

 

f, FREQUENCY (kHz)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 2. DC Current Gain (1)

Figure 3. Small±Signal Current Gain

 

5

 

 

 

 

 

 

 

 

 

 

 

 

PNP MJ11013, MJ11015

 

 

 

 

 

 

4

 

NPN MJ11012, MJ11014, MJ11016

 

 

 

 

 

 

 

 

 

 

 

 

 

(VOLTS)

 

TJ = 25°C

 

 

 

 

 

 

 

3

IC/IB = 100

 

 

 

 

 

 

 

VOLTAGE

2

 

 

 

VBE(sat)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V,

 

 

 

 

 

 

 

 

 

 

1

 

 

 

VCE(sat)

 

 

 

 

 

 

0

0.2

0.5

1

2

5

10

20

50

100

 

0.1

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

Figure 4. ªOnº Voltages (1)

 

50

 

 

 

 

 

 

 

 

 

 

(AMP)

20

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

 

 

 

 

0.2

 

BONDING WIRE LIMITATION

 

 

 

 

0.1

 

 

 

 

 

 

THERMAL LIMITATION @ TC = 25°C

 

 

 

0.05

 

 

 

 

 

SECOND BREAKDOWN LIMITATION

 

 

 

C

0.02

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

MJ11012

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

MJ11013, MJ11014

 

 

 

 

 

 

 

 

 

 

MJ11015, MJ11016

 

 

 

 

 

2

3

5

7

10

20

30

50

70

100

200

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region DC Safe Operating Area

There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operations e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

Motorola Bipolar Power Transistor Device Data

3

MJ11013 MJ11015 MJ11012 MJ11014 MJ11016

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJ11012/D

*MJ11012/D*

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