MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD6036/D
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.
•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
•Straight Lead Version in Plastic Sleeves (ª±1º Suffix)
•Available on 16 mm Tape and Reel for Automatic Handling (ªT4º Suffix)
•Surface Mount Replacements for 2N6034±2N6039 Series
•Monolithic Construction With Built±in Base±Emitter Shunt Resistors
•High DC Current Gain Ð h FE = 2500 (Typ) @ IC = 4.0 Adc
•Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
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MJD6036 |
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Rating |
Symbol |
MJD6039 |
Unit |
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Collector±Emitter Voltage |
VCEO |
80 |
Vdc |
Collector±Base Voltage |
VCB |
80 |
Vdc |
Emitter±Base Voltage |
VEB |
5 |
Vdc |
Collector Current Ð Continuous |
IC |
4 |
Adc |
Peak |
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8 |
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Base Current |
IB |
100 |
mAdc |
Total Power Dissipation @ TC = 25_C |
PD |
20 |
Watts |
Derate above 25_C |
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0.16 |
W/_C |
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Total Power Dissipation (1) @ TA = 25_C |
PD |
1.75 |
Watts |
Derate above 25_C |
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0.014 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
6.25 |
_C/W |
Thermal Resistance, Junction to Ambient (1) |
RθJA |
71.4 |
_C/W |
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage |
VCEO(sus) |
80 |
Ð |
Vdc |
(IC = 30 mAdc, IB = 0) |
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Collector±Cutoff Current |
ICEO |
Ð |
10 |
μAdc |
(VCE = 40 Vdc, IB = 0) |
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(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended. * Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%. (continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
NPN
MJD6036
PNP
MJD6039
SILICON
POWER TRANSISTORS
4 AMPERES
80 VOLTS
20 WATTS
CASE 369A±13
CASE 369±07
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
0.190 |
4.826 |
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0.165 |
4.191 |
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0.07 |
1.8 |
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0.118 |
3.0 |
0.243 |
0.063 |
1.6 |
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6.172 |
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inches |
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mm |
Motorola, Inc. 1995
MJD6036 MJD6039
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25_C unless otherwise noted)
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 1 |
Adc, VCE = 4 Vdc) |
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1000 |
Ð |
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(IC = 2 |
Adc, VCE = 4 Vdc) |
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500 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
Ð |
2.5 |
Vdc |
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(IC = 2 |
Adc, IB = 8 mAdc) |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
2.8 |
Vdc |
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(IC = 2 |
Adc, VCE = 4 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
25 |
Ð |
Ð |
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(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
MJD6036 |
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Ð |
200 |
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MJD6039 |
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Ð |
100 |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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4 |
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VCC = 30 V |
IB1 = IB2 |
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ts |
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D1, MUST BE FAST RECOVERY TYPE, e.g.: |
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± 30 V |
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1N5825 USED ABOVE IB ≈ 100 mA |
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2 |
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IC/IB = 250 |
TJ = 25°C |
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MSD6100 USED BELOW IB ≈ 100 mA |
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RC SCOPE |
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TUT |
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V2 |
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RB |
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μs) |
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tf |
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APPROX |
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( |
1 |
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t, TIME |
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+ 8 V |
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51 |
D |
≈ 8 k |
≈ |
120 |
0.8 |
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0 |
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0.6 |
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tr |
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1 |
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V1 |
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APPROX |
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+ 4 V |
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0.4 |
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±12 V |
25 |
μ |
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td @ VBE(off) = 0 |
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s |
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PNP |
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tr, tf ≤ 10 ns |
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FOR td AND tr, D1 IS DISCONNECTED |
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NPN |
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DUTY CYCLE = 1% |
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AND V2 = 0 |
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0.2 |
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FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. |
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0.04 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1 |
2 |
4 |
||||
IC, COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit |
Figure 2. Switching Times |
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
2 |
Motorola Bipolar Power Transistor Device Data |
MJD6036 MJD6039
TYPICAL ELECTRICAL CHARACTERISTICS
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1 |
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THERMAL RESISTANCE (NORMALIZED) |
0.7 |
D = 0.5 |
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r(t), EFFECTIVE TRANSIENT |
0.5 |
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0.3 |
0.2 |
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0.2 |
0.1 |
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RθJC(t) = r(t) RθJC |
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P(pk) |
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0.1 |
0.05 |
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RθJC = 6.25°C/W |
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D CURVES APPLY FOR POWER |
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0.07 |
0.01 |
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PULSE TRAIN SHOWN |
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t1 |
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0.05 |
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READ TIME AT t1 |
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t |
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TJ(pk) ± TC = P(pk) RθJC(t) |
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2 |
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0.03 |
SINGLE PULSE |
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DUTY CYCLE, D = t1/t2 |
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0.02 |
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0.01 |
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0.01 |
0.02 0.03 |
0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1 |
2 |
3 |
5 |
10 |
20 |
50 |
100 |
200 |
300 |
500 |
1000 |
t, TIME OR PULSE WIDTH (ms)
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Figure 3. Thermal Response |
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10 |
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TA |
TC |
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2.5 |
25 |
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CURRENTCOLLECTOR, (AMPS) |
7 |
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0.5 ms |
0.1 ms |
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5 |
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DISSIPATIONPOWER, (WATTS) |
0.5 |
5 |
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0.3 |
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3 |
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2 |
20 |
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5 ms |
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2 |
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1.5 |
15 |
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TC |
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1 |
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1 ms |
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0.7 |
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BONDING WIRE LIMIT |
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1 |
10 |
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TA |
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0.5 |
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THERMAL LIMIT |
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dc |
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SURFACE |
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SECOND BREAKDOWN LIMIT |
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MOUNT |
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C |
0.2 |
T |
J |
= 150°C |
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D |
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I |
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P |
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CURVES APPLY BELOW RATED VCEO |
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0.1 |
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2 |
3 |
5 |
7 |
10 |
20 |
30 |
50 |
70 |
100 |
0 |
0 |
50 |
75 |
100 |
125 |
150 |
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1 |
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25 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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T, TEMPERATURE (°C) |
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Figure 4. Maximum Rated Forward Biased |
Figure 5. Power Derating |
Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 6 and 7 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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200 |
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TC = 25°C |
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(pF) |
100 |
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70 |
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C, CAPACITANCE |
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50 |
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30 |
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Cib |
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Cob |
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20 |
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PNP |
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NPN |
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10 |
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0.04 |
0.06 0.1 |
0.2 |
0.4 0.6 |
1 |
2 |
4 |
6 |
10 |
20 |
40 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data |
3 |
MJD6036 MJD6039
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD6036 |
NPN MJD6039 |
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6 k |
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6 k |
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° |
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V |
= 3 V |
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T |
J |
= 125°C |
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V |
= 3 V |
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4 k |
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TC = 125 C |
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CE |
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4 k |
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CE |
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GAIN |
3 k |
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GAIN |
3 k |
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2 k |
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25°C |
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2 k |
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25°C |
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CURRENT |
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CURRENT |
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° |
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± 55°C |
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1 k |
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± 55 C |
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1 k |
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, DC |
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, DC |
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800 |
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800 |
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FE |
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FE |
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h |
600 |
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h |
600 |
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400 |
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400 |
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300 |
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0.1 |
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0.6 |
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300 |
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0.1 |
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0.6 |
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0.04 |
0.06 |
0.2 |
0.4 |
1 |
2 |
4 |
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0.04 |
0.06 |
0.2 |
0.4 |
1 |
2 |
4 |
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IC, COLLECTOR CURRENT (AMP) |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 7. DC Current Gain
(VOLTS) |
3.4 |
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(VOLTS) |
3.4 |
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3 |
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TJ = 125°C |
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3 |
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TJ = 125°C |
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VOLTAGE |
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VOLTAGE |
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2.6 |
IC = |
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2.6 |
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0.5 A |
1 A |
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0.5 A |
1 A |
2 A |
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4 A |
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COLLECTOR±EMITTER |
2.2 |
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COLLECTOR±EMITTER |
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2.2 |
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1.8 |
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1.8 |
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1.4 |
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1.4 |
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1 |
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1 |
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, |
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, |
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CE |
0.6 |
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CE |
0.6 |
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V |
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20 |
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100 |
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0.1 |
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0.5 |
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10 |
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50 |
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0.5 |
1 |
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10 |
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IB, BASE CURRENT (mA) |
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IB, BASE CURRENT (mA) |
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Figure 8. Collector Saturation Region
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2.2 |
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2.2 |
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TJ = 25°C |
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TJ = 25°C |
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1.8 |
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VBE(sat) @ IC/IB = 250 |
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1.8 |
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VBE(sat) @ IC/IB = 250 |
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(VOLTS) |
1.4 |
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VBE @ VCE = 3 V |
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(VOLTS) |
1.4 |
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VBE @ VCE = 3 V |
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V, VOLTAGE |
1 |
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VCE(sat) @ IC/IB = 250 |
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V, VOLTAGE |
1 |
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VCE(sat) @ IC/IB = 250 |
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0.6 |
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0.6 |
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0.2 |
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0.2 |
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0.04 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1 |
2 |
4 |
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0.04 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1 |
2 |
4 |
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IC, COLLECTOR CURRENT (AMP) |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 9. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
MJD6036 MJD6039
PNP MJD6036 |
NPN MJD6039 |
(mV/°C) |
+ 0.8 |
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(mV/°C) |
+ 0.8 |
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0 |
*APPLIES FOR IC/IB < hFE/3 |
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0 |
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*APPLIED FOR IC/IB < hFE/3 |
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25°C to 150°C |
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COEFFICIENTS |
± 0.8 |
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COEFFICIENTS |
± 0.8 |
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25°C to 150°C |
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± 1.6 |
*θVC for VCE(sat) |
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± 55°C to 25°C |
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± 1.6 |
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± 2.4 |
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± 2.4 |
θVC for VCE(sat) |
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, TEMPERATURE |
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, TEMPERATURE |
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± 55°C to 25°C |
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25°C to 150°C |
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± 3.2 |
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± 3.2 |
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25°C to 150°C |
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θVB for VBE |
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25°C to 150°C |
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θVC for VBE |
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± 4 |
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± 4 |
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25°C to 150°C |
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V |
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V |
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θ |
± 4.8 |
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θ |
± 4.8 |
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0.04 0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1 |
2 |
3 |
4 |
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0.04 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1 |
2 |
3 |
4 |
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IC, COLLECTOR CURRENT (AMP) |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 10. Temperature Coefficients
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105 |
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105 |
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A) |
104 |
REVERSE |
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FORWARD |
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A) |
104 |
REVERSE |
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FORWARD |
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(μ |
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(μ |
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CURRENT |
103 |
VCE = 30 V |
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CURRENT |
103 |
VCE = 30 V |
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102 |
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102 |
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, COLLECTOR |
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, COLLECTOR |
TJ = 150°C |
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TJ = 150°C |
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101 |
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101 |
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0 |
100°C |
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100 |
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C |
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C |
° |
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I |
10 |
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I |
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25°C |
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100 C |
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±1 |
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10±1 |
25°C |
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10 |
+ 0.4 + 0.2 |
0 |
± 0.2 |
± 0.4 |
± 0.6 ± 0.8 |
± 1 |
± 1.2 |
± 1.4 |
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± 0.6 |
± 0.4 ± 0.2 |
0 |
+ 0.2 + 0.4 |
+ 0.6 + 0.8 |
+ 1 |
+ 1.2 + 1.4 |
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+ 0.6 |
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VBE, BASE±EMITTER VOLTAGE (VOLTS) |
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VBE, BASE±EMITTER VOLTAGE (VOLTS) |
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Figure 11. Collector Cut±Off Region
PNP |
COLLECTOR |
NPN |
MJD6036 |
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MJD3039 |
BASE |
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BASE |
≈ 8 k |
≈ 60 |
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COLLECTOR
≈ 8 k |
≈ 60 |
EMITTER |
EMITTER |
Figure 12. Darlington Schematic
Motorola Bipolar Power Transistor Device Data |
5 |
MJD6036 MJD6039
PACKAGE DIMENSIONS
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±T± |
SEATING |
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PLANE |
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B |
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C |
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V |
R |
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E |
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4 |
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Z |
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A |
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S |
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1 |
2 |
3 |
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U |
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K |
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F |
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J |
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H |
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D 2 PL
G |
0.13 (0.005) M T |
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.235 |
0.250 |
5.97 |
6.35 |
B |
0.250 |
0.265 |
6.35 |
6.73 |
C |
0.086 |
0.094 |
2.19 |
2.38 |
D |
0.027 |
0.035 |
0.69 |
0.88 |
E |
0.033 |
0.040 |
0.84 |
1.01 |
F |
0.037 |
0.047 |
0.94 |
1.19 |
G |
0.180 BSC |
4.58 BSC |
||
H |
0.034 |
0.040 |
0.87 |
1.01 |
J |
0.018 |
0.023 |
0.46 |
0.58 |
K |
0.102 |
0.114 |
2.60 |
2.89 |
L |
0.090 BSC |
2.29 BSC |
||
R |
0.175 |
0.215 |
4.45 |
5.46 |
S |
0.020 |
0.050 |
0.51 |
1.27 |
U |
0.020 |
±±± |
0.51 |
±±± |
V |
0.030 |
0.050 |
0.77 |
1.27 |
Z |
0.138 |
±±± |
3.51 |
±±± |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
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CASE 369A±13 |
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ISSUE W |
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B |
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C |
NOTES: |
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V |
R |
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E |
1. DIMENSIONING AND TOLERANCING PER ANSI |
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2. |
Y14.5M, 1982. |
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CONTROLLING DIMENSION: INCH. |
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4 |
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INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
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A |
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0.235 |
0.250 |
5.97 |
6.35 |
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B |
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0.250 |
0.265 |
6.35 |
6.73 |
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1 |
2 |
3 |
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C |
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0.086 |
0.094 |
2.19 |
2.38 |
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S |
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D |
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0.027 |
0.035 |
0.69 |
0.88 |
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E |
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0.033 |
0.040 |
0.84 |
1.01 |
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±T± |
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F |
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0.037 |
0.047 |
0.94 |
1.19 |
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G |
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0.090 BSC |
2.29 BSC |
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SEATING |
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K |
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H |
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0.034 |
0.040 |
0.87 |
1.01 |
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PLANE |
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J |
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0.018 |
0.023 |
0.46 |
0.58 |
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K |
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0.350 |
0.380 |
8.89 |
9.65 |
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J |
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R |
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0.175 |
0.215 |
4.45 |
5.46 |
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F |
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S |
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0.050 |
0.090 |
1.27 |
2.28 |
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H |
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0.030 |
0.050 |
0.77 |
1.27 |
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D 3 PL |
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STYLE 1: |
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G |
0.13 (0.005) M |
T |
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PIN 1. |
BASE |
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2. |
COLLECTOR |
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3. |
EMITTER |
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4. |
COLLECTOR |
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CASE 369±07 |
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ISSUE K |
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How to reach us: |
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USA / EUROPE: Motorola Literature Distribution; |
JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki, |
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|
|
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 |
6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315 |
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MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, |
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INTERNET: http://Design±NET.com |
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298 |
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◊ |
MJD6036/D |
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*MJD6036/D*