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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ16010/D

Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Transistors

These transistors are designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line±operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited.

• Switching Regulators

• Fast Turn±Off Times Ð T C = 100°C

• Inverters

50 ns Inductive Fall Time (Typ)

• Solenoids

90 ns Inductive Crossover Time (Typ)

• Relay Drivers

800 ns Inductive Storage Time (Typ)

• Motor Controls

• 100_C Performance Specified for:

• Deflection Circuits

Reverse±Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

MJ16010

MJW16010

Rating

Symbol

MJ16012

MJW16012

Unit

Collector±Emitter Voltage

VCEO

450

Vdc

Collector±Emitter Voltage

VCEV

850

Vdc

Emitter±Base Voltage

VEB

6.0

Vdc

Collector Current Ð Continuous

Adc

Ð Peak (1)

ICM

Base Current Ð Continuous

Adc

Ð Peak (1)

IBM

Total Device Dissipation

Watts

@ TC = 25_C

1 75

135

@ TC = 100_C

100

53 8

Derate above 25_C

1.0

1.11

W/_C

Operating and Storage Junction

TJ, Tstg

± 65 to 200

± 55 to 150

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RqJC

1.0

0.93

_C/W

Lead Temperature for Soldering

275

Purposes, 1/8″ from Case for

5 Seconds

(1) Pulse Test: Pulse Width v 50 ms, Duty Cycle w 10%

MJ16010

MJW16010

MJ16012* MJW16012*

*Motorola Preferred Device

15 AMPERE

NPN SILICON

POWER TRANSISTORS

450 VOLTS

135 AND 175 WATTS

CASE 1±07 TO±204AA (TO±3) MJ16010 MJ16012

CASE 340F±03

TO±247AE

MJW16010

MJW16012

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

REV 2

Motorola, Inc. 1995

MJ16010

MJW16010

MJ16012

MJW16012

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (Table 2)

VCEO(sus)

450

Vdc

(IC = 100 mA, IB = 0)

Collector Cutoff Current

ICEV

mAdc

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)

0.25

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)

1.5

Collector Cutoff Current

ICER

2.5

mAdc

(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)

Emitter Cutoff Current

IEBO

mAdc

(VEB = 6.0 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 16

ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 5.0 Adc, IB = 0.7 Adc)

2.5

(IC = 10 Adc, IB = 1.3 Adc)

3.0

(IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)

3.0

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 10 Adc, IB = 1.3 Adc)

1.5

(IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)

1.5

DC Current Gain

hFE

5.0

(IC = 15 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

400

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

Rose Time

(IC = 10 Adc,

(IB2 = 2.6 Adc,

200

Storage Time

VCC = 250 Vdc,

RB2 = 1.6 Ω)

1200

IB1 = 1.3 Adc,

Fall Time

200

PW = 30 μs,

Storage Time

Duty Cycle v 2.0%)

(VBE(off) = 5.0 Vdc)

650

Fall Time

Inductive Load (Table 2)

Storage Time

tsv

800

1800

Fall Time

(IC = 10 Adc,

(TC = 100_C)

tfi

200

Crossover Time

250

IB1 = 1.3 Adc,

Storage Time

VBE(off) = 5.0 Vdc,

tsv

1050

VCE(pk) = 400 Vdc)

Fall Time

(TC = 150_C)

tfi

Crossover Time

120

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%

2	Motorola Bipolar Power Transistor Device Data

MJ16010

MJW16010

MJ16012

MJW16012

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (Table 2)

VCEO(sus)

450

Vdc

(IC = 100 mA, IB = 0)

Collector Cutoff Current

ICEV

mAdc

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)

0.25

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc. TC = 100_C)

1.5

Collector Cutoff Current

ICER

2.5

mAdc

(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)

Emitter Cutoff Current

IEBO

mAdc

(VEB = 6.0 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 15

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 16

ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 5.0 Adc, IB = 0.7 Adc)

2.5

(IC = 10 Adc, IB = 1.0 Adc)

3.0

(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)

3.0

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 10 Adc, IB = 1.0 Adc)

1.5

(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)

1.5

DC Current Gain

hFE

7.0

(IC = 15 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

400

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

Rose Time

(IC = 10 Adc,

(IB2 = 2.0 Adc,

200

Storage Time

VCC = 250 Vdc,

RB2 = 1.6 Ω)

900

IB1 = 1.0 Adc,

Fall Time

150

PW = 30 μs,

Storage Time

Duty Cycle v 2.0%)

(VBE(off) = 5.0 Vdc)

500

Fall Time

Inductive Load (Table 2)

Storage Time

tsv

650

1500

Fall Time

(IC = 10 Adc,

(TC = 100_C)

tfi

150

Crossover Time

200

IB1 = 1.0 Adc,

Storage Time

VBE(off) = 5.0 Vdc,

tsv

850

VCE(pk) = 400 Vdc)

Fall Time

(TC = 150_C)

tfi

Crossover Time

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%

Motorola Bipolar Power Transistor Device Data

MJ16010 MJW16010 MJ16012 MJW16012

TYPICAL STATIC CHARACTERISTICS

	50
		TC = 100°C
GAIN		25°C
GAIN	20
CURRENT	20
CURRENT	10
, DC	10
, DC
FE
h
	5.0
	3.0				VCE = 5.0 V
	3.0	0.5	1.0	2.0	5.0	10	20
	0.2	0.5	1.0	2.0	5.0	10	20
			IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

(VOLTS)	5.0
	3.0
	2.0
VOLTAGE	2.0
	1.0						βf = 10
	0.7						βf = 10
, COLLECTOR±EMITTER	0.7						TC = 100	°
	0.5						TC = 100	C
	0.5		βf = 10
	0.3		βf = 10
	0.3			°
	0.2		TC = 25		C
	0.2
	0.1						βf = 5.0
	0.07						TC = 25°C
CE	0.07
CE	0.05
V	0.05	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	15
	0.15 0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

	104
μA)	103
(
CURRENT		TJ = 150°C
CURRENT	102	125°C
, COLLECTOR	101	100°C
	101	75°C
		75°C
	0	REVERSE		FORWARD	VCE = 250 V
C	10
I
	10±1	25°C
	10±1	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
	± 0.4	± 0.2	0	+ 0.2	+ 0.4	+ 0.6

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

(VOLTS)	2.0
(VOLTS)
VOLTAGE	1.0							15 A
VOLTAGE	0.7					10 A
, COLLECTOR±EMITTER	0.5
	0.3				5.0 A
	IC = 1.0 A				5.0 A
	IC = 1.0 A
	0.2
							TC = 25°C
CE	0.1
V	0.1	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10
	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10
			IB, BASE CURRENT (AMPS)

Figure 2. Collector Saturation Region

	1.5			βf = 10
(VOLTS)				βf = 10
	1.0

VOLTAGE	0.7			TC = 25°C
	0.7	75°C
		75°C
	0.5					100°C
, BASE±EMITTER	0.5					100°C
	0.4
	0.3
	0.2
BE	0.2
BE
V
	0.15
	0.15	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	15
				IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base±Emitter Voltage

	10000
	5000	Cib
	3000
(pF)	2000
(pF)	1000
C, CAPACITANCE	1000
	500	Cob
	300	Cob
	200
	100				TC = 25°C
	50				TC = 25°C
	50
	20
	10	0.3 0.5	1.0	2.0	5.0	10	20 30	50	100	300500 850
	0.1	0.3 0.5	1.0	2.0	5.0	10	20 30	50	100	300500 850
			VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

4	Motorola Bipolar Power Transistor Device Data

	5000
	3000		VBE(off) = 0 V
(ns)	2000		2.0 V
			2.0 V
	1000
TIME	1000		5.0 V
			5.0 V

STORAGE	500
STORAGE	300				βf* = 5.0
,	200				TC = 75°C
sv	200				TC = 75°C
t					VCC = 20 V
					VCC = 20 V
	100
	0.07
	0.05	2.0	3.0	5.0	7.0		15
	1.5	2.0	3.0	5.0	7.0	10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Storage Time

	MJ16010		MJW16010		MJ16012		MJW16012
	5000
	3000		VBE(off) = 0 V
	2000		VBE(off) = 0 V
(ns)	2000
(ns)			2.0 V
TIME	1000		2.0 V
	1000
	700
,STORAGE	700
	500		5.0 V
	300
	200
sv	200				βf* = 10
sv
t
	100				TC = 75°C
	100				VCC = 20 V
					VCC = 20 V
	0.05
	1.5	2.0	3.0	5.0	7.0	10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Storage Time

(ns)	1000
(ns)	500				VBE(off) = 0 V
TIME	500				VBE(off) = 0 V
TIME	300
FALL	300
FALL	200					5.0 V
CURRENT	100
CURRENT						2.0 V
, COLLECTOR	50	βf* = 5.0				2.0 V
	50

		TC = 75°C
	20	VCC = 20 V
	20

fi
t	10
	10
	1.5	2.0	3.0	5.0	7.0	10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Collector Current Fall Time

(ns)	1000
(ns)	500
TIME	500
TIME	300			VBE(off) = 0 V
FALL	300			VBE(off) = 0 V
FALL	200
CURRENT	100				2.0 V
					2.0 V

COLLECTOR	50	βf* = 10
		βf* = 10
	20	TC = 75°C			5.0 V
	20	VCC = 20 V
,
fi
t	10
	10
	1.5	2.0	3.0	5.0	7.0	10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Collector Current Fall Time

	1500
	1000
(ns)	500						VBE(off) = 0 V
	500

TIME	300						5.0 V
TIME	200
CROSSOVER

	100	βf* = 5.0					2.0 V
		βf* = 5.0					2.0 V
	50	T	C	= 75°C
,			C
c		VCC = 20 V
t		VCC = 20 V
	20
	15
	1.5		2.0		3.0	5.0	7.0	10	15
					IC, COLLECTOR CURRENT (AMPS)

Figure 11. Crossover Time

*βf = IC

IB1

	1500
	1000
(ns)	500			VBE(off) = 0 V
(ns)				VBE(off) = 0 V
TIME	300
TIME
,CROSSOVER	200
	100				2.0 V
	50	βf* = 10
c	50				5.0 V
t					5.0 V
		TC = 75°C
	20	VCC = 20 V
	20
	15
	1.5	2.0	3.0	5.0	7.0	10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Crossover Time

Motorola Bipolar Power Transistor Device Data

MJ16010 MJW16010 MJ16012 MJW16012

GUARANTEED SAFE OPERATING AREA LIMITS

		IC(pk)	VCE(pk)
			VCE(pk)
		90% VCE(pk)	90% IC(pk)
IC	tsv	trv	tfi		tti
			tc
VCE		10% VCE(pk)		10%
		10% VCE(pk)			2% IC
IB	90% I
IB	90% I		I	(pk)
	B1			C
		TIME

Figure 13. Inductive Switching Measurements

(AMPS)	10
	9
	8
CURRENT	8
	7
	6	IB1 = 2.0 A
		IB1 = 2.0 A
BASE	5
BASE	4
,REVERSE	4
	3	1.0 A
		1.0 A			IC = 10 A
	2				IC = 10 A
B2	1				TC = 25°C
I

	0	1.0	2.0	3.0	4.0	5.0
	0	1.0	2.0	3.0	4.0	5.0
		VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 14. Peak Reverse Base Current

SAFE OPERATING AREA INFORMATION

	20								10	μs	PEAK COLLECTOR CURRENT (AMPS)	20
	10								10	μs		18
, COLLECTOR CURRENT (AMPS)	10			MJ16010/12								18
	5.0	MJW16010,12						1.0 ms
		MJW16010,12						1.0 ms
	2.0			dc								14
	2.0			dc
	1.0		TC = 25°C
			TC = 25°C									10	βf* ≥	4.0
	0.5											10
	0.5
													TC ≤ 100°C
	0.1		BONDING WIRE LIMIT									6.0				VBE(off) = 0 V			1.0 to 5.0 V
	0.1		BONDING WIRE LIMIT
			THERMAL LIMIT
C	0.05										,
I											C(pk)	2.0
			SECOND BREAKDOWN LIMIT
			SECOND BREAKDOWN LIMIT

	0.02										I	0
	0.02	10	20	30	50	70	100	200	300	450		0		150	200	250	350	450	600 700	850
	5.0	10	20	30	50	70	100	200	300	450		100		150	200	250	350	450	600 700	850
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)											VCE(pk), PEAK COLLECTOR±EMITTER VOLTAGE (VOLTS)

			Figure 15. Maximum Forward Bias
*β	= IC		Safe Operating Area
f
f		IB1
		IB1

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 15 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figure 17. At high case temperatures, thermal limitations will reduce the

Figure 16. Maximum Reverse Bias

Safe Operating Area

power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base±to±emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 16 gives the RBSOA characteristics.

6	Motorola Bipolar Power Transistor Device Data

					MJ16010	MJW16010	MJ16012	MJW16012
		1.0
RESPONSE			RθJC(t) = r(t) RθJC
			RθJC = 1.0°C/W or 1.11°C/W
			TJ(pk) ± TC = P(pk) RθJC(t)
	(NORMALIZED)
TRANSIENT THERMAL		0.1
TRANSIENT THERMAL
r(t),
		0.01
		0.01	0.1	1.0	10		100	1K

t, TIME (ms)

Figure 17. Thermal Response

	100
(%)			SECOND BREAKDOWN DERATING
(%)	80
FACTOR	80
FACTOR	60
POWER DERATING	60
	40	THERMAL DERATING
	20	MJW16010, MJW16012
		MJW16010, MJW16012
		MJ16010, MJ16012
	0	40	80	120	160	200
	0	40	80	120	160	200
			TC, CASE TEMPERATURE (°C)

Figure 18. Power Derating

Table 1. Resistive Load Switching

		td and tr			ts and tf			+ Vdc ≈ 11 Vdc
		td and tr			ts and tf		100
							100
			0 V			20
						20		2N6191
			≈ ± 35 V					2N6191
			≈ ± 35 V		+
H.P. 214					+		0.02 μF
H.P. 214			H.P. 214		±	10 μF		RB1
or		*IC	H.P. 214		±	10 μF		RB1
EQUIV.		*IC	or					A
P.G.	*IB		EQUIV.					RB2
			P.G.			0.02 μF		RB2
		T.U.T.				0.02 μF
		T.U.T.
	RB = 10 Ω	RL	5					2N5337
	RB = 10 Ω		5			1.0 μF 100		2N5337
50		VCC	0		500	1.0 μF 100
		VCC = 250 Vdc						± V
		VCC = 250 Vdc
		RL = 25 Ω	+ V
		IC = 10 Adc	0 V	± 5 V
		IB = 1.0 Adc		± 5 V
	≈ 11 V		A			T.U.T.		RL
Vin			A			T.U.T.	*IC
Vin							*IC
0 V			50	*IB
	tr ≤ 15 ns		50	*IB				VCC
								VCC

*Tektronix AM503			VCC = 250 Vdc		IB1 = 1.0 Adc			RB1 = 10 Ω
*Tektronix AM503			RL = 25 Ω		IB2 = 2.0 Adc			RB2 = 1.6 Ω
*P6302 or Equivalent			RL = 25 Ω		IB2 = 2.0 Adc			RB2 = 1.6 Ω
*P6302 or Equivalent			IC = 10 Adc		For VBE(off) = 5.0 V, RB2 = 0 Ω
			IC = 10 Adc		For VBE(off) = 5.0 V, RB2 = 0 Ω

Note: Adjust ±V to obtain desired VBE(off) at Point A.

Motorola Bipolar Power Transistor Device Data

MJ16010 MJW16010 MJ16012 MJW16012

Table 2. Inductive Load Switching

Lcoil (ICpk) t1 [ VCC

T1 adjusted to obtain IC(pk)

VCEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 V Its

	0.02 μF			+ V ≈ 11 V
	0.02 μF			100
				100
	H.P. 214
	or EQUIV.			2N6191
	P.G.			2N6191
	P.G.	20
		20
0 V	+	μF
0 V	10	μF		RB1
	±			RB1
≈ ± 35 V				A
	0.02 μF			RB2
		1.0 μF
	50	+	±	2N5337
	50			2N5337
	500
				100
				± V
					IC(pk)
T1	+ V			IC
				IC
0 V	*IC				VCE(pk)
	± V		L
A	T.U.T.			VCE
A	T.U.T.		MR856		VCE(pk) = VCE(clamp)
					VCE(pk) = VCE(clamp)

50	*IB
50			Vclamp	VCC	IB1
			Vclamp	VCC	IB1
				IB
	Inductive Switching			RBSOA	IB2
	L = 200 μH			L = 200 μH
	RB2 = 0			RB2 = 0
	VCC = 20 V			VCC = 20 V
	RB1 selected for desired IB1			RB1 selected for desired IB1

*Tektronix AM503	Scope Ð Tektronix
*P6302 or Equivalent	7403 or Equivalent	Note: Adjust ±V to obtain desired VBE(off) at Point A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

tsv

IC(pk) = 10 A
IB1 = 1.0 A
VBE(off) = 5.0 V			VCE(pk)
VCE(pk) = 400 V
TC = 25°C
Time Base =	0	I B1
100 ns/cm	0	I B1
100 ns/cm
		VCE(sat)
		tsv= 370 ns	I B2

				tfi, tc
IC(pk) = 10 A				tfi = 20 ns
I	B1	= 1.0 A	IC(pk)	tfi = 20 ns
VBE(off) = 5.0 V			IC(pk)	V
VCE(pk) = 400 V				CE(pk)
VCE(pk) = 400 V
TC = 25°C
Time Base =
	20 ns/cm
			VCE(sat)	tc
				24 ns

8	Motorola Bipolar Power Transistor Device Data

MJ16010

MJW16010

MJ16012

MJW16012

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

Q M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

						NOTES:
					±T±	1.	DIMENSIONING AND TOLERANCING PER ANSI
	±Q±				±T±	Y14.5M, 1982.
	±Q±				E	Y14.5M, 1982.
0.25 (0.010) M T	B	M			E	2.	CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010) M T	B	M	±B±		C			MILLIMETERS		INCHES
			±B±

						4	DIM MIN		MAX	MIN	MAX
						4	A	20.40	20.90	0.803	0.823
				U			A	20.40	20.90	0.803	0.823
				U	L		B	15.44	15.95	0.608	0.628
					L		C	4.70	5.21	0.185	0.205
							C	4.70	5.21	0.185	0.205
	A						D	1.09	1.30	0.043	0.051
	A	R					E	1.50	1.63	0.059	0.064
		R					F	1.80	2.18	0.071	0.086
		1	2	3			G	5.45 BSC		0.215 BSC
		1	2	3			H	2.56	2.87	0.101	0.113
							J	0.48	0.68	0.019	0.027
					±Y±		K	15.57	16.08	0.613	0.633
	K	P			±Y±		L	7.26	7.50	0.286	0.295
	K	P					P	3.10	3.38	0.122	0.133
							Q	3.50	3.70	0.138	0.145
							R	3.30	3.80	0.130	0.150
		F			H		U	5.30 BSC		0.209 BSC
		F		V	H		V	3.05	3.40	0.120	0.134
				V	J
		D			J
		D	G				STYLE 3:
							STYLE 3:
0.25 (0.010) M	Y	Q S						PIN 1. BASE
0.25 (0.010) M	Y	Q S						PIN 1. BASE
								2. COLLECTOR
								3. EMITTER
								4. COLLECTOR

CASE 340F±03

TO±247AE

ISSUE E

Motorola Bipolar Power Transistor Device Data

MJ16010 MJW16010 MJ16012 MJW16012

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ MJ16010/D

*MJ16010/D*

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