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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD241B/D

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

•Collector±Emitter Saturation Voltage Ð VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc

•Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C

•High Current Gain Ð Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc

•Compact TO±220 AB Package

MAXIMUM RATINGS

		BD241B		BD241C
Rating	Symbol	BD242B		BD242C	Unit

Collector±Emitter Voltage	VCEO	80		100	Vdc
Collector±Emitter Voltage	VCES	90		115	Vdc
Emitter±Base Voltage	VEB		5.0		Vdc
Collector Current Ð Continuous	IC		3.0		Adc
Peak			5.0		Adc

Base Current	IB		1.0		Adc
Total Device Dissipation @ TC = 25_C	PD		40		Watts
Derate above 25_C			0.32		W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic			Symbol			Max			Unit

Thermal Resistance, Junction to Ambient			RθJA		62.5				_C/W
Thermal Resistance, Junction to Case			RθJC		3.125				_C/W
(WATTS)	40
	40
	30


DISSIPATION	20
DISSIPATION
POWER,
POWER,	10
D	10
D
P	0

		20	40	60	80		100	120		140	160
	0	20	40	60	80		100	120		140	160

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

NPN

BD241B

BD241C*

PNP

BD242B BD242C*

*Motorola Preferred Device

3 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

80, 100 VOLTS

40 WATTS

CASE 221A±06

TO±220AB

Motorola, Inc. 1995

BD241B		BD241C	BD242B	BD242C
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

			Characteristic		Symbol	Min.	Max.	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage1				V			Vdc
	(IC = 30 mAdc, IB = 0)			BD241B, BD242B	CEO	80
	(IC = 30 mAdc, IB = 0)			BD241B, BD242B		80
				BD241C, BD242C		100

	Collector Cutoff Current				ICEO		0.3	mAdc
	(VCE = 60 Vdc, IB = 0)			BD241B, BD241C, BD242B, BD242C
	Collector Cutoff Current				ICES			μAdc
	(VCE = 80 Vdc, VEB = 0)			BD241B, BD242B			200
	(VCE = 100 Vdc, VEB = 0)			BD241C, BD242C			200
	Emitter Cutoff Current				IEBO			mAdc
	(VBE = 5.0 Vdc, IC = 0)						1.0
	ON CHARACTERISTICS1
	DC Current Gain				hFE
	(IC = 1.0 Adc, VCE = 4.0 Vdc)					25
	(IC = 3.0 Adc, VCE = 4.0 Vdc)					10
	Collector±Emitter Saturation Voltage				VCE(sat)			Vdc
	(IC = 3.0 Adc, IB = 600 Adc)						1.2
	Base±Emitter On Voltage				VBE(on)			Vdc
	(IC = 3.0 Adc, VCE = 4.0 Vdc)						1.8
	DYNAMIC CHARACTERISTICS

	Current Gain ± Bandwidth Product2				fT			MHz
	(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)					3.0
	Small±Signal Current Gain				hfe
	(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)					20

1Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

2fT = |hfe| •ftest.

	TURN-ON PULSE	VCC
APPROX		RL
APPROX
+ 11 V		Vin	SCOPE
		Vin	SCOPE
		RK
Vin 0		Cjd % Ceb
VEB(off)	t1	± 4.0 V
	t3	± 4.0 V
APPROX	t3	t1 v 7.0 ns
APPROX
+ 11 V
+ 11 V		100 t t2 t 500 μs
		100 t t2 t 500 μs
		t3 t 15 ns
Vin
	t2	DUTY CYCLE [ 2.0%
TURN-OFF PULSE		APPROX ± 9.0 V
TURN-OFF PULSE

Figure 2. Switching Time Equivalent Circuit

	2.0
	2.0

	1.0	IC/IB = 10
	1.0	TJ = 25°C
	0.7	TJ = 25°C
	0.7	tr @ VCC = 30 V
μs)	0.5
	0.5
	0.3
	0.3	tr @ VCC = 10 V
(		tr @ VCC = 10 V
t, TIME

0.1

0.07 td @ VBE(off) = 2.0 V

0.05

0.03

0.02

0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

1.0

0.7

D = 0.5

0.5

0.3 0.2

0.2

0.1

0.070.05

0.05

0.02

0.03

0.020.01

0.01

0.010.02

BD241B

BD241C

BD242B

BD242C

ZqJC (t) = r(t) RqJC

P(pk)

RqJC = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

SINGLE PULSE

TJ(pk) ± TC = P(pk) ZqJC(t)

DUTY CYCLE, D = t1/t2

0.05

0.1

0.2

0.5

1.0

2.0

5.0

100

200

500

1.0 k

t, TIME (ms)

Figure 4. Thermal Response

(VOLTS)	10
(VOLTS)	5.0
VOLTAGE	5.0		1.0 ms
			1.0 ms		100 ms
			5.0 ms		100 ms
			5.0 ms
	2.0
, COLLECTOR±EMITTER	2.0
	1.0	SECOND BREAKDOWN
		SECOND BREAKDOWN
	0.5	LIMITED @ TJ v 150°C
	0.5	THERMAL LIMITATION @ TC = 25°C
		BONDING WIRE LIMITED
	0.2	CURVES APPLY BELOW
	0.2	RATED VCEO	BD241B, BD242B
		RATED VCEO	BD241B, BD242B
CE			BD241C, BD242C
V	0.1	10	20	50	100
	0.1
	5.0
		IC, COLLECTOR CURRENT (AMP)

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

Figure 5. Active Region Safe Operating Area

	3.0
	3.0		IB1 = IB2
	2.0		IB1 = IB2
	2.0	ts′	IC/IB = 10
		ts′	IC/IB = 10
	1.0		ts′= ts ± 1/8 tf
	1.0	tf @ VCC = 30 V	TJ = 25°C
	0.7		TJ = 25°C


μs)	0.5
	0.5

(		tf @ VCC = 10 V
TIME	0.3	tf @ VCC = 10 V
	0.3
t,	0.2
	0.2

0.1

0.07

0.05

0.03

0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn±Off Time

CAPACITANCE (pF)

300

= +

25°

200

100

Ceb

Ccb

0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30 40
			VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

BD241B BD241C BD242B BD242C

	500
	500
	300		VCE = 2.0 V
	300	TJ = 150°C
GAIN
GAIN	100	25°C
		25°C
CURRENT
	70

		± 55°C
	50	± 55°C
DC,

	30
FE	30


h
h

7.0

5.0

0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

2.0
2.0											T	J =	25°	C
1.6											T



1.2

	IC =	0.3	A				1.0	A		3.0 A
	IC =	0.3	A				1.0	A		3.0 A
0.8
0.8
0.4


0

	2.0		5.0	10	20	50			100	200	500				1000
1.0	2.0		5.0	10	20	50			100	200	500				1000

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

V, VOLTAGE (VOLTS)

1.4																	C)(mV/°	+ 2.5
1.4			T	J = 25°		C												+ 2.5	T	J	=	±	65°C	TO	+	150		°C
																			T	J	=	±	65°C	TO	+	150		°C
																				*APPLIES				FOR	I /I		≤		5.0
1.2																		+ 2.0							C B				5.0
																		+ 2.0							C B
																	COEFFICIENTS	+ 1.5
1.0

	V	BE(sat) @ IC				/IB	= 10
	V	BE(sat) @ IC				/IB	= 10											0
																		+ 1.0
0.8																	TEMPERATURE,	+ 0.5					*θVC FOR VCE(sat)
0.8

0.2			VCE(sat)			@	IC/IB	=	10									± 2.0					θVB FOR VBE
0.6					V	BE	@ VCE		= 2.0		V							± 0.5
0.4																		± 1.0
0.4
																	V	± 1.5






0																	θ	± 2.5

			0.01		0.020.03 0.05					0.1		0.2 0.3	0.5	1.0	2.0	3.0						0.01		0.02			0.05			0.1	0.2 0.3	0.5	1.0	2.0 3.0
0.003 0.005			0.01		0.020.03 0.05					0.1		0.2 0.3	0.5	1.0	2.0	3.0		0.003 0.005				0.01		0.02			0.05			0.1	0.2 0.3	0.5	1.0	2.0 3.0
					IC, COLLECTOR CURRENT (AMPS)																			IC, COLLECTOR CURRENT (AMP)
					Figure 10. ªOnº Voltages																	Figure 11. Temperature Coefficients

	103
μA)	102	VCE = 30 V
(		TJ = 150°C
CURRENT	1	TJ = 150°C
	10
	100		100°C
, COLLECTOR	100		100°C
	10±1		REVERSE					FORWARD
			REVERSE					FORWARD
	± 2
C	± 2		25°C
I	10		25°C
	10± 3						ICES
	10± 3		± 0.2	± 0.1	0	+ 0.1	+ 0.2	+ 0.3	+ 0.4	+ 0.5	+ 0.6
	± 0.4 ± 0.3		± 0.2	± 0.1	0	+ 0.1	+ 0.2	+ 0.3	+ 0.4	+ 0.5	+ 0.6
			VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut±Off Region

(OHMS)	107
(OHMS)							VCE = 30 V
RESISTANCE					IC = 10 x ICES		VCE = 30 V
	106				IC = 10 x ICES
	106
	105
BASE±EMITTER	105	IC ≈ ICES
		IC ≈ ICES
	104		IC = 2 x ICES

,EXTERNAL	103		(TYPICAL ICES VALUES
		OBTAINED FROM FIGURE 12)
	102
BE	102	40	60	80	100	120	140	160
BE	20	40	60	80	100	120	140	160
R			TJ, JUNCTION TEMPERATURE (°C)
			TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Effects of Base±Emitter Resistance

4	Motorola Bipolar Power Transistor Device Data

BD241B BD241C BD242B BD242C

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

BD241B BD241C BD242B BD242C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ BD241B/D

*BD241B/D*

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