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BD179REV

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD179/D

BD179

Plastic

Medium

Power

Silicon

BD179-10

NPN

Transistor

. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing

3.0 AMPERES

POWER TRANSISTORS

complementary or quasi complementary circuits.

NPN SILICON

• DC Current Gain Ð h FE = 40 (Min) @ IC = 0.15 Adc

80 VOLTS

• BD179 is complementary with BD180

30 WATTS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector±Emitter Voltage

VCEO

Vdc

Collector±Base Voltage

VCBO

Vdc

Emitter±Base Voltage

VEBO

5.0

Vdc

Collector Current

3.0

Adc

Base Current

1.0

Adc

Total Device Dissipation @ TC = 25_C

Watts

Derate above 25_C

240

mw/_C

Operating and Storage Junction

TJ, Tstg

± 65 to +150

Temperature Range

THERMAL CHARACTERISTICS

CASE 77±08

Characteristic

Symbol

Max

Unit

TO±225AA TYPE

Thermal Resistance, Junction to Case

θJC

4.16

_C/W

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Collector±Emitter Sustaining Voltage*

V(BR)CEO

Vdc

(IC = 0.1 Adc, IB = 0)

Collector Cutoff Current

ICBO

0.1

mAdc

(VCB = 80 Vdc, IE = 0)

Emitter Cutoff Current

IEBO

1.0

mAdc

(VBE = 5.0 Vdc, IC = 0)

DC Current Gain

hFE

(IC = 0.15 A, VCE = 2.0 V)

BD179±10

160

(IC = 1.0 A, VCE = 2.0 V)

ALL

Collector±Emitter Saturation Voltage*

VCE(sat)

0.8

Vdc

(IC = 1.0 Adc, IB = 0.1 Adc)

Base±Emitter On Voltage*

VBE(on)

1.3

Vdc

(IC = 1.0 Adc, VCE = 2.0 Vdc)

Current±Gain ± Bandwidth Product

3.0

MHz

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

* Pulse Test: Pulse Width x 300 As, Duty Cycle x 2.0%.

REV 7

Motorola, Inc. 1995

BD179 BD179-10

	10								100 μs
(AMP)	7.0								100 μs
	7.0
	5.0							1.0 ms
CURRENT	3.0					dc		1.0 ms
CURRENT						dc

	2.0						5.0 ms
COLLECTOR	1.0	TJ = 150°C
COLLECTOR	0.3		THERMAL LIMITATION
	0.7
	0.5		SECONDARY BREAKDOWN LIMITATION
C			(BASE±EMITTER DISSIPATION IS
,	0.2
I	0.2		SIGNIFICANT ABOVE IC = 2.0 AMP)
			SIGNIFICANT ABOVE IC = 2.0 AMP)
	0.1		PULSE DUTY CYCLE < 10%
	0.1	2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power±temperature derating must be observed for both steady state and pulse power conditions.

hFE, DC CURRENT GAIN (NORMALIZED)

r(t), NORMALIZED EFFECTIVE TRANSIENT

(VOLTS)	1.0
VOLTAGE	0.8
	0.8									IC =		0.1	A					0.25 A					0.5	A								1.0		A
										IC =		0.1	A					0.25 A					0.5	A								1.0		A
COLLECTOR±EMITTER,	0.6
	0.6																																						TJ =	25	°C
	0.4



CE	0.2




V	0
V	0		0.3				0.5						1.0			2.0		3.0		5.0		10					20						30				50			100			200
	0.2		0.3				0.5						1.0			2.0		3.0		5.0		10					20						30				50			100			200
																				IB, BASE CURRENT (mA)
																Figure 2. Collector Saturation Region
1000																						1.5
700															V	CE	=	2.0	V

500																						1.2			TJ = 25°C
500																									TJ = 25°C
300																					(VOLTS)

			T	J	=	+ 150°		C																		VBE(sat)			@ IC/IB =					10
100			T	J	=	+ 150°		C																		VBE(sat)			@ IC/IB =					10
200																					VOLTAGE	0.9
70																						0.6




			T	J	=	+ 25°C
50			T	J	=	+ 25°C																								VBE @ V				CE	=	2.0		V
50																														VBE @ V				CE	=	2.0		V
30			T	J	=	+ 55°C																0.3


20
20
10																						0					V	CE(sat) @ IC/IB = 10
																											V	CE(sat) @ IC/IB = 10

2.0 3.0		5.0	10				20		30		50		100	200 300		500		1000 2000				2.0 3.0				5.0	10				20		30		50		100			200 300		500	1000 2000
							IC, COLLECTOR CURRENT (mA)																							IC, COLLECTOR CURRENT (mA)
							Figure 3. Current Gain																							Figure 4. ªOnº Voltages

	1.0
	0.7	D = 0.5
RESISTANCE	0.5
RESISTANCE	0.3	D = 0.2
	0.3	D = 0.2
	0.2	D = 0.1
		D = 0.1						SINGLE PULSE
		D = 0.05						SINGLE PULSE			θJC(t) = r(t) θJC					P(pk)
	0.1	D = 0.05									θJC(t) = r(t) θJC					P(pk)
THERMAL	0.1										θJC = 4.16°C/W MAX						t1
THERMAL	0.07	D = 0.01									θ	°					t1
	0.05	D = 0.01									JC = 3.5 C/W TYP
	0.05										D CURVES APPLY FOR POWER
											D CURVES APPLY FOR POWER
	0.03										PULSE TRAIN SHOWN						t2
	0.03										READ TIME AT t1						t2
	0.02										READ TIME AT t1
	0.02										TJ(pk) ± TC = P(pk) θJC(t)					DUTY CYCLE, D = t /t
											TJ(pk) ± TC = P(pk) θJC(t)					DUTY CYCLE, D = t /t
																			1 2
	0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
	0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
								t, TIME or PULSE WIDTH (ms)

Figure 5. Thermal Response

2	Motorola Bipolar Power Transistor Device Data

BD179 BD179-10

PACKAGE DIMENSIONS

±B±
U		F	C
Q			M
		±A±	M
		±A±
1	2	3
H		K
		K

V	J
G	R
S	0.25 (0.010) M A M B M
D 2 PL

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.425	0.435	10.80	11.04
B	0.295	0.305	7.50	7.74
C	0.095	0.105	2.42	2.66
D	0.020	0.026	0.51	0.66
F	0.115	0.130	2.93	3.30
G	0.094 BSC		2.39 BSC
H	0.050	0.095	1.27	2.41
J	0.015	0.025	0.39	0.63
K	0.575	0.655	14.61	16.63
M	5	TYP	5	TYP
Q	0.148	0.158	3.76	4.01
R	0.045	0.055	1.15	1.39
S	0.025	0.035	0.64	0.88
U	0.145	0.155	3.69	3.93
V	0.040	±±±	1.02	±±±

0.25 (0.010) M A M B M	STYLE 1:
0.25 (0.010) M A M B M	PIN 1.	EMITTER
	2.	COLLECTOR
	3.	BASE

CASE 77±08

TO±225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

BD179 BD179-10

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ BD179/D

*BD179/D*

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