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2N6436RE

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6436/D

High-Power PNP Silicon Transistors

. . . designed for use in industrial±military power amplifier and switching circuit applications.

• High Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 80 Vdc (Min) Ð 2N6436

VCEO(sus) = 100 Vdc (Min) Ð 2N6437

VCEO(sus) = 120 Vdc (Min) Ð 2N6438

• High DC Current Gain Ð

hFE = 20±80 @IC = 10 Adc

hFE = 12 (Min) @ IC = 25 Adc

• Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

•Fast Switching Times @ IC = 10 Adc tr = 0.3 μs (Max)

ts = 1.0 μs (Max) tf = 0.25 μs (Max)

•Complement to NPN 2N6338 thru 2N6341

MAXIMUM RATINGS (1)

Rating	Symbol	2N6436		2N6437	2N6438	Unit

Collector±Base Voltage	VCB	100		120	140	Vdc
Collector±Emitter Voltage	VCEO	80		100	120	Vdc
Emitter±Base Voltage	VEB		6.0			Vdc
Collector Current Ð Continuous	IC		25			Adc
Peak			50

Base Current	IB		10			Adc
Total Device Dissipation @ TC = 25_C	PD		200			Watts
Derate above 25_C			1.14			W/_C

Operating and Storage Junction	TJ,Tstg		± 65 to +200			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.875	_C/W

(1) Indicates JEDEC Registered Data.

2N6436

2N6437

2N6438*

*Motorola Preferred Device

25 AMPERE

POWER TRANSISTORS

PNP SILICON

80, 100, 120 VOLTS

200 WATTS

CASE 1±07 TO±204AA (TO±3)

	200
(WATTS)	175
	150

DISSIPATION	125
	100
	75
, POWER	75
	50

D	25
P

	0	25	50	75	100	125	150	175	200
	0	25	50	75	100	125	150	175	200
				TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

2N6436		2N6437	2N6438
	*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

			Characteristic		Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)			2N6436	VCEO(sus)	80	Ð	Vdc
	(IC = 50 mAdc, IB = 0)			2N6437		100	Ð
				2N6438		120	Ð

	Collector Cutoff Current				ICEO			μAdc
	(VCE = 40 Vdc, IB = 0)			2N6436		Ð	50
	(VCE = 50 Vdc, IB = 0)			2N6437		Ð	50
	(VCE = 60 Vdc, IB = 0)			2N6438		Ð	50
	Collector Cutoff Current				ICEX			μAdc
	(VCE = 90 Vdc, VBE(off) = ±1.5 Vdc)			2N6436		Ð	10
	(VCE = 110 Vdc, VBE(off) = ±1.5 Vdc)			2N6437		Ð	10
	(VCE = 130 Vdc, VBE(off) = ±1.5 Vdc)			2N6438		Ð	10
	(VCE = 80 Vdc, VBE(off) = ±1.5 Vdc, TC = 150_C)			2N6436		Ð	1.0	mAdc
	(VCE = 100 Vdc, VBE(off) = ±1.5 Vdc, TC = 150_C)			2N6437		Ð	1.0
	(VCE = 120 Vdc, VBE(off) = ±1.5 Vdc, TC = 150_C)			2N6438		Ð	1.0
	Collector Cutoff Current				ICBO			μAdc
	(VCB = 100 Vdc, IE = 0)			2N6436		Ð	10
	(VCB = 120 Vdc, IE = 0)			2N6437		Ð	10
	(VCB = 140 Vdc, IE = 0)			2N6438		Ð	10
	Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)				IEBO	Ð	100	μAdc
	ON CHARACTERISTICS

	DC Current Gain (1)				hFE			Ð
	(IC = 0.5 Adc, VCE = 2.0 Vdc)					30	Ð
	(IC = 10 Adc, VCE = 2.0 Vdc)					20	120
	(IC = 25 Adc, VCE = 2.0 Vdc)					12	Ð
	Collector±Emitter Saturation Voltage (1)				VCE(sat)			Vdc
	(IC = 10 Adc, IB = 1.0 Adc)					Ð	1.0
	(IC = 25 Adc, IB = 2.5 Adc)					Ð	1.8
	Base±Emitter Saturation Voltage (1)				VBE(sat)			Vdc
	(IC = 10 Adc, IB = 1.0 Adc)					Ð	1.8
	(IC = 25 Adc, IB = 2.5 Adc)					Ð	2.5
	DYNAMIC CHARACTERISTICS

	Current±Gain Ð Bandwidth Product (I C = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)				fT	40	Ð	MHz
	Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz)				Cob	Ð	700	pF
	SWITCHING CHARACTERISTICS

	Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc)				tr	Ð	0.3	μs
	Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)				ts	Ð	1.0	μs
	Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)				tf	Ð	0.25	μs

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width v 300 μs; Duty Cycle v 2.0%.

			VCC
			+ 80 V
			RC
			8.0 OHMS
+ 9.0 V		RB =	SCOPE
0		10 OHMS
0
± 11 V	μs	MBR745
10	μs	MBR745

tr, tf v 10 ns		± 5.0 V
DUTY CYCLE = 1.0%		± 5.0 V
DUTY CYCLE = 1.0%

NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions.

Figure 2. Switching Time Test Circuit

t, TIME ( μs)

0.3
0.2	t @ V	BE(off)	= 6.0 V	VCC = 80 V
	d	BE(off)		IC/IB = 10
				IC/IB = 10
1.0				TJ = 25°C
0.7
0.5
0.3	tr
0.2

0.1

0.07

0.05

0.03

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

															2N6436		2N6437		2N6438
1.0
0.7	D = 0.5
0.5	D = 0.5
0.5
0.3		0.2
0.2		0.1
		0.1									P(pk)				ZθJC(t) = r(t)RθJC
0.1		0.05									P(pk)				ZθJC(t) = r(t)RθJC
0.1		0.05													RθJC = 0.875°C/W MAX
0.07		0.02													RθJC = 0.875°C/W MAX
0.07															D CURVES APPLY FOR POWER
0.05															D CURVES APPLY FOR POWER
0.05												t1			PULSE TRAIN SHOWN
												t1			PULSE TRAIN SHOWN
0.03			0.01									t2			READ TIME AT t1
			0.01												TJ(pk) ± TC = P(pk) ZθJC(t)
0.02											DUTY CYCLE, D = t1/t2				TJ(pk) ± TC = P(pk) ZθJC(t)
0.02		SINGLE PULSE									DUTY CYCLE, D = t1/t2
		SINGLE PULSE
0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
								t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

IC, COLLECTOR CURRENT (AMP)

100
50		200 μs
20		1.0 ms
10		5.0 ms
5.0	°	dc
5.0	°
	TJ = 200 C

2.0

1.0BONDING WIRE LIMITED

0.5	THERMALLY LIMITED
0.2	TC = 25°C (SINGLE PULSE)
	PULSE DUTY CYCLE v 10%

0.1SECOND BREAKDOWN LIMITED

0.05		CURVES APPLY					2N6436
0.02							2N6437
		BELOW RATED VCEO					2N6438
0.01	3.0	5.0	7.0	10	20	30	50	70	100	200
2.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

	3.0
	2.0								VCC = 80 V
					ts				IB1 = IB2
	1.0								IC/IB = 10
s)(TIMEt,μ	0.7		tf						TJ = 25°C		CAPACITANCE(pF)
s)(TIMEt,μ	0.5										CAPACITANCE(pF)
	0.5
	0.3
	0.2
	0.1
	0.07
	0.05
	0.03	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30
	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30
				IC, COLLECTOR CURRENT (AMP)

4000
4000
3000
3000							C	ib		TJ	= 25°C
2000										TJ	= 25°C



1000					Cob
1000
700


500


300


200
200	0.2
0.1	0.2	0.5	1.0	2.0		5.0			10	20		50	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn-Off Time

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

2N6436		2N6437			2N6438
	200										(VOLTS)
		TJ = 150°C									(VOLTS)
CURRENT GAIN	100		+ 25°C								VOLTAGE
	70		+ 25°C
	70
	50			± 55°C

, DC	30										COLLECTOR±EMITTER
FE
h	20			VCE	= 2.0 V
				VCE	= 2.0 V
				VCE	= 4.0 V
											,
											CE
	10	0.5	0.7	1.0	2.0	3.0	5.0		10	20	V
	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30
				IC, COLLECTOR CURRENT (AMP)

2.0
2.0														T	J = 25°C
1.8														T	J = 25°C
1.8		IC	= 2.0 A			5.0	A			10 A
1.6		IC	= 2.0 A			5.0	A			10 A					20 A
1.4
1.4
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0	0.03		0.05	0.07	0.1			0.2	0.3		0.5	0.7	1.0			2.0
0.02	0.03		0.05	0.07	0.1			0.2	0.3		0.5	0.7	1.0			2.0

IB, BASE CURRENT (AMP)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

V, VOLTAGE (VOLTS)

2.0
2.0		TJ	= 25°		C
1.8		TJ	= 25°		C
1.6
1.6
1.4
1.4
1.2
1.2
1.0
1.0	V	BE(sat)		@ I		/I	= 10
0.8		BE(sat)				C B
0.8
0.6
0.6	VBE @ VCE =						2.0 V
0.4	VBE @ VCE =						2.0 V
0.4	VCE(sat) @ IC/IB = 10
0.2	VCE(sat) @ IC/IB = 10
0
0		0.5		0.7			1.0	2.0	3.0	5.0	7.0	10	20	30
0.3		0.5		0.7			1.0	2.0	3.0	5.0	7.0	10	20	30

IC, COLLECTOR CURRENT (AMP)

Figure 10. ªOnº Voltages

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+ 2.5

FE @ V

2.0

+ 2.0

*APPLIES

FOR

I /I

+ 1.5

C B

+ 1.0

+ 25°C to +150

°C

+ 0.5

*θVC FOR

VCE(sat)

± 55°C

+25

°C

± 0.5

+ 25°C to +150

°C

± 1.0

θVB FOR VBE

± 1.5

± 55°C to + 25

°C

± 2.0

± 2.5

0.5

0.7

1.0

2.0

3.0

5.0

7.0

0.3

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

	102		TJ = +150°C
			TJ = +150°C
μA)	101
(				+100°C
CURRENT				+100°C
CURRENT	100
, COLLECTOR	10±1			+ 25°C		VCE = 40 V
				+ 25°C
	10±2	REVERSE				FORWARD
C	10±2
I
	±3	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5
	10 + 0.2	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5
			VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut-Off Region

	101
	100	TJ = +150°C			VCE = 40 V
(μA)	100
(μA)		+100°C
CURRENT	10±1	+100°C
	10±1

, BASE	10±2
, BASE		+ 25°C
B
I	10±3
	10±3
		REVERSE		FORWARD
	10±4	+ 0.08	0	± 0.08	± 0.16	± 0.24
	+ 0.16	+ 0.08	0	± 0.08	± 0.16	± 0.24
		VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 13. Base Cutoff Region

4	Motorola Bipolar Power Transistor Device Data

2N6436 2N6437 2N6438

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

2N6436 2N6437 2N6438

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊

2N6436/D

*2N6436/D*

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