MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6055/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general±purpose amplifier and low frequency switching applications.
• High DC Current Gain Ð
hFE = 3000 (Typ) @ IC = 4.0 Adc |
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• Collector±Emitter Sustaining Voltage Ð @ 100 mA |
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VCEO(sus) = 60 Vdc (Min) Ð 2N6055 |
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VCEO(sus) = 80 Vdc (Min) Ð 2N6056 |
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• Low Collector±Emitter Saturation Voltage Ð |
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VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc |
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VCE(sat) = 3.0 Vdc (Max) @ IC = 8.0 Adc |
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• Monolithic Construction with Built±In Base±Emitter Shunt Resistors |
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MAXIMUM RATINGS (1) |
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Rating |
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Symbol |
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2N6055 |
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2N6056 |
Unit |
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Collector±Emitter Voltage |
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VCEO |
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60 |
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80 |
Vdc |
Collector±Base Voltage |
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VCB |
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60 |
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80 |
Vdc |
Emitter±Base Voltage |
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VEB |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
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IC |
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8.0 |
Adc |
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Peak |
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16 |
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Base Current |
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IB |
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120 |
mAdc |
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2N6055 |
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2N6056 |
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Total Device Dissipation @ TC = 25_C |
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PD |
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100 |
Watts |
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Derate above 25_C |
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0.571 |
W/_C |
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Operating and Storage Junction |
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TJ, Tstg |
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± 65 to +200 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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2N6055 |
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Characteristic |
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Symbol |
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2N6056 |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.75 |
_C/W |
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(1) Indicates JEDEC Registered Data |
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NPN
2N6055
2N6056*
*Motorola Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 ± 80 VOLTS
100 WATTS
CASE 1±07 TO±204AA (TO±3)
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100 |
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(WATTS) |
80 |
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DISSIPATION |
60 |
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40 |
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,POWER |
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20 |
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D |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
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TC, TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
2N6055 |
2N6056 |
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 100 mAdc, IB = 0) |
2N6055 |
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60 |
Ð |
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2N6056 |
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80 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 30 Vdc, IB = 0) |
2N6055 |
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0.5 |
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(VCE = 40 Vdc, IB = 0) |
2N6056 |
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Ð |
0.5 |
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Collector Cutoff Current |
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ICEX |
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mAdc |
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(VCE = Rated VCB, VBE(off) = 1.5 Vdc) |
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Ð |
0.5 |
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(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) |
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Ð |
5.0 |
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Emitter Cutoff Current |
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IEBO |
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2.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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(IC = 4.0 Adc, VCE = 3.0 Vdc) |
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750 |
18000 |
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(IC = 8.0 Adc, VCE = 3.0 Vdc) |
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100 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 4.0 Adc, IB = 16 mAdc) |
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2.0 |
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(IC = 8.0 Adc, IB = 80 mAdc) |
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Ð |
3.0 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
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4.0 |
Vdc |
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(IC = 8.0 Adc, IB = 80 mAdc) |
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Base±Emitter On Voltage |
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VBE(on) |
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2.8 |
Vdc |
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(IC = 4.0 Adc, VCE = 3.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Magnitude of Common Emitter Small±Signal Short Circuit Current Transfer Ratio |
|hfe| |
4.0 |
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(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |
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Output Capacitance |
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Cob |
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200 |
pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
2N6055, 2N6056 |
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Small±Signal Current Gain |
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hfe |
300 |
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Ð |
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(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) |
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* Indicates JEDEC Registered Data. |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0% |
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RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1 MUST BE FAST RECOVERY TYPE, e.g., |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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R |
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approx |
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B |
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+ 12 V |
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0 |
51 |
D1 |
≈ 8.0 k |
≈ 50 |
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V1 |
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+ 4.0 V |
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approx |
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± 8.0 V |
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25 |
μs |
for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0 |
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DUTY CYCLE = 1.0% |
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For NPN test circuit reverse diode, polarities and input pulses.
Figure 2. Switching Times Test Circuit
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5.0 |
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3.0 |
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2.0 |
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1.0 |
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tf |
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μs) |
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0.7 |
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( |
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t, TIME |
0.5 |
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0.3 |
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tr |
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VCC = 30 V |
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0.2 |
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IC/IB = 250 |
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0.1 |
IB1 = IB2 |
td @ VBE(off) = 0 |
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TJ = 25°C |
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0.07 |
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0.05 |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |
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2N6055 |
2N6056 |
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1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE(NORMALIZED) |
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r(t), TRANSIENT THERMAL |
0.3 |
0.2 |
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0.2 |
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0.1 |
0.1 |
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RθJC(t) = r(t) RθJC |
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P(pk) |
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0.05 |
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RθJC = 1.75°C/W Ð 2N6056 |
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0.07 |
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D CURVES APPLY FOR POWER |
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0.05 |
0.02 |
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PULSE TRAIN SHOWN |
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t1 |
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0.03 |
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0.01 |
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READ TIME AT t1 |
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t2 |
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0.02 |
SINGLE PULSE |
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TJ(pk) ± TC = P(pk) θJC(t) |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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70 |
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200 |
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700 |
1000 |
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0.1 |
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t, TIME (ms)
Figure 4. Thermal Response
ACTIVE±REGION SAFE OPERATING AREA
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(AMP) |
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0.1 ms |
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CURRENT |
5.0 |
TJ = 200°C |
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0.5 ms |
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2.0 |
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1.0 ms |
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5.0 ms |
dc |
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,COLLECTOR |
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1.0 |
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SECOND BREAKDOWN LIMIT |
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0.5 |
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BONDING WIRE LIMIT |
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0.2 |
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THERMALLY LIMITED |
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@ T = 25°C (SINGLE PULSE) |
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C |
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C |
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2N6055 |
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0.1 |
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0.05 |
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2N6056 |
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7.0 |
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1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
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70 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200 _C; TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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Figure 5. 2N6055 and 2N6056 |
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10,000 |
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300 |
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GAIN |
5000 |
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TJ = 25°C |
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3000 |
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200 |
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, SMALL±SIGNAL CURRENT |
2000 |
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C, CAPACITANCE (pF) |
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1000 |
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TC = 25°C |
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Cob |
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500 |
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VCE = 3.0 Vdc |
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100 |
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300 |
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IC = 3.0 Adc |
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200 |
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Cib |
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100 |
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70 |
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50 |
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2N6055, 2N6056 |
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50 |
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fe |
30 |
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h |
20 |
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2N6055, 2N6056 |
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10 |
2.0 |
5.0 |
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500 |
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0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 6. Small±Signal Current Gain |
Figure 7. Capacitance |
Motorola Bipolar Power Transistor Device Data |
3 |
2N6055 2N6056
20,000
10,000
GAIN |
5000 |
CURRENTDC, |
1000 |
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3000 |
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2000 |
FE |
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h |
500 |
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300 |
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NPN |
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2N6055, 2N6056 |
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(VOLTS) |
3.0 |
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TJ = 150°C |
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VCE = 3.0 V |
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VOLTAGE |
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IC = 2.0 A |
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TJ = 25°C |
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2.6 |
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COLLECTOR±EMITTER, |
2.2 |
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25°C |
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1.8 |
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± 55°C |
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1.4 |
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CE |
1.0 |
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0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
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IB, BASE CURRENT (mA) |
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Figure 8. DC Current Gain |
Figure 9. Collector Saturation Region |
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3.0 |
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TJ = 25°C |
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2.5 |
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2.0 |
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VOLTAGE |
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VBE @ VCE = 3.0 V |
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0.3 |
0.5 |
0.7 |
1.0 |
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0.1 |
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IC, COLLECTOR CURRENT (AMP)
Figure 10. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
2N6055 2N6056
PACKAGE DIMENSIONS
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A |
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N |
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NOTES: |
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C |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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±T± |
SEATING |
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2. CONTROLLING DIMENSION: INCH. |
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PLANE |
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3. ALL RULES AND NOTES ASSOCIATED WITH |
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REFERENCED TO±204AA OUTLINE SHALL APPLY. |
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D 2 PL |
K |
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INCHES |
MILLIMETERS |
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0.13 (0.005) M |
T |
Q |
M |
Y |
M |
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DIM |
MIN |
MAX |
MIN |
MAX |
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U |
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A |
1.550 REF |
39.37 REF |
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±Y± |
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B |
±±± |
1.050 |
±±± |
26.67 |
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V |
L |
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C |
0.250 |
0.335 |
6.35 |
8.51 |
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2 |
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D |
0.038 |
0.043 |
0.97 |
1.09 |
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B |
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E |
0.055 |
0.070 |
1.40 |
1.77 |
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H |
G |
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G |
0.430 BSC |
10.92 BSC |
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1 |
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H |
0.215 BSC |
5.46 BSC |
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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L |
0.665 BSC |
16.89 BSC |
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±Q± |
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N |
±±± |
0.830 |
±±± |
21.08 |
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0.13 (0.005) M |
T |
Y |
M |
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Q |
0.151 |
0.165 |
3.84 |
4.19 |
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U |
1.187 BSC |
30.15 BSC |
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
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CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |
2N6055 2N6056
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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2N6055/D |
*2N6055/D*