MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMDJ3P03BJT/D
Preliminary Data |
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Plastic |
Power |
Transistors |
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Motorola Preferred Device |
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SO±8 for Surface Mount Applications |
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DUAL BIPOLAR |
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• Collector ±Emitter Sustaining Voltage Ð V CEO(sus) |
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= 30 Vdc (Min) @ IC = 10 mAdc |
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POWER TRANSISTOR |
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• High DC Current Gain Ð h FE |
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PNP SILICON |
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30 VOLTS |
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= 140 (Min) @ IC = 1.2 Adc |
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3 AMPERES |
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= 125 (Min) @ IC = 3.0 Adc |
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• Low Collector ±Emitter Saturation Voltage Ð V CE(sat) |
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= 0.24 Vdc (Max) @ IC = 1.2 Adc |
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= 0.60 Vdc (Max) @ IC = 5.0 Adc |
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• Miniature SO±8 Surface Mount Package ± Saves Board Space |
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E |
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C |
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CASE 751±05, Style 16 |
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(SO±8) |
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B |
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E |
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C |
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Emitter±1 |
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1 |
8 |
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Collector±1 |
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B |
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Base±1 |
2 |
7 |
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Collector±1 |
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Emitter±2 |
3 |
6 |
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Collector±2 |
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Schematic |
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Base±2 |
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5 |
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Collector±2 |
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Top View |
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Pinout |
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MAXIMUM RATINGS (TC = 25°C unless otherwise noted) |
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Rating |
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Symbol |
Value |
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Unit |
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Collector±Base Voltage |
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VCB |
45 |
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Vdc |
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Collector±Emitter Voltage |
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VCEO |
30 |
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Vdc |
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Emitter±Base Voltage |
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VEB |
± 8.0 |
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Vdc |
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Collector Current Ð Continuous |
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IC |
3.0 |
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Adc |
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Collector Current Ð |
Peak |
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5.0 |
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Base Current Ð Continuous |
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IB |
1.0 |
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Adc |
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Operating and Storage Junction Temperature Range |
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TJ, Tstg |
± 55 to + 150 |
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_C |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
Max |
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Unit |
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Thermal Resistance ± Junction to Ambient(1) |
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RθJC |
62.5 |
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_C/W |
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Total Power Dissipation @ T = 25_C(1) |
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P |
2.0 |
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Watts |
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A |
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D |
16 |
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mW/_C |
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Derate above 25_C |
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Maximum Temperature for Soldering |
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TL |
260 |
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_C |
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(1) Mounted on 2º sq. FR±4 board (1º sq. 2 oz. Cu 0.06º thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2 |
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Motorola, Inc. 1997 |
1 |
Motorola Bipolar Power Transistor Device Data |
MMDJ3P03BJT
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
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Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage |
VCEO(sus) |
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Vdc |
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(IC = 10 mAdc, IB = 0 Adc) |
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30 |
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Collector Cutoff Current |
ICER |
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20 |
μAdc |
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(VCE = 25 Vdc, RBE = 200 W) |
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Emitter Cutoff Current |
IEBO |
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μAdc |
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(VBE = 5.0 Vdc) |
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Ð |
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10 |
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ON CHARACTERISTICS(1) |
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Collector±Emitter Saturation Voltage |
VCE(sat) |
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Vdc |
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(IC = 0.8 Adc, IB = 20 mAdc) |
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0.14 |
0.20 |
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(IC = 1.2 Adc, IB = 20 mAdc) |
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0.24 |
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(IC = 5.0 Adc, IB = 1.0 Adc) |
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0.60 |
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Base±Emitter Saturation Voltage |
VBE(sat) |
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Vdc |
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(IC = 5.0 Adc, IB = 1.0 Adc) |
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1.40 |
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Base±Emitter On Voltage |
VBE(on) |
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Vdc |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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1.10 |
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DC Current Gain |
hFE |
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Ð |
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(IC = 1.2 Adc, VCE = 4.0 Vdc) |
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140 |
Ð |
Ð |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
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125 |
180 |
Ð |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
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pF |
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(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) |
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100 |
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Input Capacitance |
Cib |
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pF |
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(VEB = 8.0 Vdc) |
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135 |
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Current±Gain Ð Bandwidth Product (2) |
f |
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MHz |
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(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) |
T |
Ð |
105 |
Ð |
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(1) |
Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. |
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(2) |
fT = |hFE| S ftest |
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2 |
Motorola Bipolar Power Transistor Device Data |
hFE , DC CURRENT GAIN
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MMDJ3P03BJT |
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1000 |
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1.0 |
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° |
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V |
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150 C |
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BE(sat) |
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25°C |
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100 |
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±55°C |
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(V) |
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VOLTAGE |
0.1 |
VCE(sat) |
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10 |
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V, |
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VCE = 2 V |
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IC/IB = 125 |
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1.0 |
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0.01 |
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0.01 |
0.1 |
1.0 |
10 |
0.01 |
0.1 |
1.0 |
10 |
IC, COLLECTOR CURRENT (A) |
IC, COLLECTOR CURRENT (A) |
Figure 1. DC Current Gain |
Figure 2. ªONº Voltages |
VCE(sat), COLLECTOR±EMITTER VOLTAGE (V)
1.00 |
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1000 |
IC = 0.8 A |
IC = 1.2 A |
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0.75 |
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(pF) |
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0.50 |
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CAPACITANCE |
100 |
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0.25 |
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IC = 0.5 A |
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0 |
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10 |
1.0 |
10 |
100 |
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0.1 |
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
Cob
1.0 |
10 |
100 |
VR, REVERSE BIAS (V)
Figure 4. Capacitance
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10 |
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EFFECTIVE TRANSIENT |
RESISTANCE |
1.0 |
D = 0.5 |
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0.2 |
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0.1 |
0.1 |
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NORMALIZED TO qja AT 10 s |
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0.05 |
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0.0106 W |
0.0431 W |
0.1643 W |
0.3507 W |
0.4302 W |
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0.02 |
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CHIP |
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, |
THERMAL |
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JUNCTION |
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thja(t) |
0.01 |
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177.14 F |
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0.01 |
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0.0253 F |
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0.1406 F |
0.5064 F |
2.9468 F |
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R |
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SINGLE PULSE |
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AMBIENT |
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0.001 |
0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1.0 |
10 |
100 |
1000 |
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IC, COLLECTOR CURRENT (AMPS)
Figure 5. Thermal Response
Motorola Bipolar Power Transistor Device Data |
3 |
MMDJ3P03BJT
PACKAGE DIMENSIONS
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±A± |
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M |
J |
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1 |
4XP |
B |
RX 45 |
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(0.010)M |
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5 |
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±B± |
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4 |
0.25 |
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M |
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F |
±T± |
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C |
SEATING |
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PLANE |
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K |
8X D |
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0.25 (0.010) M T B S |
A S |
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CASE 751±05
ISSUE P
NOTES:
1.DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE.
2.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
3.DIMENSIONS ARE IN MILLIMETER.
4.DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
5.MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6.DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
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MILLIMETERS |
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DIM |
MIN |
MAX |
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A |
4.80 |
5.00 |
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B |
3.80 |
4.00 |
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C |
1.35 |
1.75 |
STYLE 16: |
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D |
0.35 |
0.49 |
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PIN 1. |
EMITTER, DIE #1 |
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F |
0.40 |
1.25 |
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2. |
BASE, DIE #1 |
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G |
1.27 BSC |
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3. |
EMITTER, DIE #2 |
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J |
0.18 |
0.25 |
4. |
BASE, DIE #2 |
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K |
0.10 |
0.25 |
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5. |
COLLECTOR, DIE #2 |
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M |
0 |
7 |
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6. |
COLLECTOR, DIE #2 |
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P |
5.80 |
6.20 |
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7. |
COLLECTOR, DIE #1 |
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R |
0.25 |
0.50 |
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8. |
COLLECTOR, DIE #1 |
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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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INTERNET: http://www.mot.com/SPS/
4 |
◊ |
Motorola Bipolar Power Transistor Device Data |
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MMDJ3P03BJT/D |