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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUD44D2/D

Advance Information

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

The BUD44D2 is state±of±art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Main features:

•Low Base Drive Requirement

•High Peak DC Current Gain (55 Typical) @ IC = 100 mA

•Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

•Integrated Collector±Emitter Free Wheeling Diode

•Fully Characterized and Guaranteed Dynamic VCE(sat)

•ª6 Sigmaº Process Providing Tight and Reproductible Parameter Spreads

It's characteristics make it also suitable for PFC application.

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	400	Vdc
Collector±Base Breakdown Voltage	VCBO	700	Vdc
Collector±Emitter Breakdown Voltage	VCES	700	Vdc
Emitter±Base Voltage	VEBO	12	Vdc
Collector Current Ð Continuous	IC	2	Adc
Ð Peak (1)	ICM	5
Base Current Ð Continuous	IB	1	Adc
Base Current Ð Peak (1)	IBM	2
*Total Device Dissipation @ TC = 25_C	PD	25	Watt
*Derate above 25°C		0.2	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance			_C/W
Ð Junction to Case	RqJC	5
Ð Junction to Ambient	RqJA	71.4
Maximum Lead Temperature for Soldering	TL	260	_C
Purposes: 1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

BUD44D2

POWER TRANSISTORS

2 AMPERES

700 VOLTS

25 WATTS

CASE 369±07

CASE 369A±13

MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS

6.7
0.265
	6.7	0.265″
	1.8	.070″
	30	0.118
1.6		1.6
0.063	0.063
2.3	2.3
0.090	0.090

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Motorola, Inc. 1995

BUD44D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage		VCEO(sus)	400	470		Vdc
(IC = 100 mA, L = 25 mH)
Collector±Base Breakdown Voltage		VCBO	700	920		Vdc
(ICBO = 1 mA)
Emitter±Base Breakdown Voltage		VEBO	12	14.5		Vdc
(IEBO = 1 mA)
Collector Cutoff Current	@ TC = 25°C	ICEO			50	μAdc
(VCE = Rated VCEO, IB = 0)	@ TC = 125°C				500
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)	@ TC = 25°C	ICES			50	μAdc
	@ TC = 125°C				500
Collector Cutoff Current (VCE = 500 V, VEB = 0)	@ TC = 125°C				100
Emitter±Cutoff Current		IEBO			100	μAdc
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS

Base±Emitter Saturation Voltage	@ TC = 25°C	VBE(sat)				Vdc
(IC = 0.4 Adc, IB = 40 mAdc)	@ TC = 25°C			0.78	0.9
	@ TC = 125°C			0.65	0.8
(IC = 1 Adc, IB = 0.2 Adc)	@ TC = 25°C			0.87	1
	@ TC = 125°C			0.76	0.9
Collector±Emitter Saturation Voltage	@ TC = 25°C	VCE(sat)				Vdc
(IC = 0.4 Adc, IB = 20 mAdc)	@ TC = 25°C			0.45	0.65
	@ TC = 125°C			0.67	1
(IC = 0.4 Adc, IB = 40 mAdc)	@ TC = 25°C			0.25	0.4
	@ TC = 125°C			0.27	0.5
(IC = 1 Adc, IB = 0.2 Adc)	@ TC = 25°C			0.28	0.5
	@ TC = 125°C			0.35	0.6
DC Current Gain	@ TC = 25°C	hFE				Ð
(IC = 0.4 Adc, VCE = 1 Vdc)	@ TC = 25°C		20	32
	@ TC = 125°C		18	26
(IC = 1 Adc, VCE = 1 Vdc)	@ TC = 25°C		10	14
	@ TC = 125°C		7	9.5
(IC = 2 Adc, VCE = 5 Vdc)	@ TC = 25°C		8	11
DIODE CHARACTERISTICS

Forward Diode Voltage	@ TC = 25°C	VEC		0.8	1	V
(IEC = 0.2 Adc)	@ TC = 25°C
(IEC = 0.2 Adc)	@ TC = 125°C			0.6
(IEC = 0.4 Adc)	@ TC = 25°C			0.9	1.2
(IEC = 1 Adc)	@ TC = 25°C			1.1	1.5
Forward Recovery Time (see Figure 22 bis)		Tfr		415		ns
(IF = 0.2 Adc, di/dt = 10 A/μs)	@ TC = 25°C
(IF = 0.4 Adc, di/dt = 10 A/μs)	@ TC = 25°C			390
(IF = 1 Adc, di/dt = 10 A/μs)	@ TC = 25°C			340

2	Motorola Bipolar Power Transistor Device Data

BUD44D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC SATURATION VOLTAGE

= 0.4 A

@ 1 μs

@ TC = 25°C

VCE(dsat)

3.3

6.8

@ TC = 125 C

Dynamic Saturation

IB1 = 40 mA

@ 3 μs

@ TC = 25°C

0.5

Voltage:

VCC = 300 V

@ TC = 125°C

1.3

Determined 1 s and

3 μs respectively after

@ 1 μs

@ TC = 25°C

4.4

rising IB1 reaches

= 1 A

12.8

90% of final IB1

= 0.2 A

@ TC = 125 C

@ 3 μs

@ TC = 25°C

0.5

VCC = 300 V

@ TC = 125°C

1.8

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

Output Capacitance

Cob

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Input Capacitance

Cib

240

500

(VEB = 8 Vdc)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

Turn±on Time

= 1 Adc, I

= 0.2 Adc

@ TC = 25°C

ton

150

105

@ TC = 125 C

IB2 = 0.5 Adc

Turn±off Time

@ TC = 25°C

toff

1.1

1.25

μs

V = 300 Vdc

@ TC = 125°C

1.5

Turn±on Time

= 0.5 Adc, I

= 50 mAdc

@ TC = 25°C

ton

400

600

@ TC = 125 C

IB2 = 250 mAdc

Turn±off Time

@ TC = 25°C

toff

750

1000

VCC = 300 Vdc

@ TC = 125°C

1300

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

@ TC = 25°C

110

150

IC = 0.4 Adc

@ TC = 125°C

105

Storage Time

@ TC = 25°C

0.55

0.75

μs

IB1 = 40 mAdc

@ TC = 125°C

0.7

IB2 = 0.2 Adc

Crossover Time

@ TC = 25°C

150

@ TC = 125°C

Fall Time

@ TC = 25°C

100

150

IC = 1 Adc

@ TC = 125°C

Storage Time

@ TC = 25°C

1.05

1.5

μs

IB1 = 0.2 Adc

@ TC = 125°C

1.45

IB2 = 0.5 Adc

Crossover Time

@ TC = 25°C

100

175

@ TC = 125°C

100

Fall Time

@ TC = 25°C

110

150

IC = 0.8 Adc

@ TC = 125°C

180

Storage Time

@ TC = 25°C

2.05

2.35

μs

IB1 = 160 mAdc

@ TC = 125°C

2.8

IB2 = 160 mAdc

Crossover Time

@ TC = 25°C

180

300

@ TC = 125°C

400

Fall Time

@ TC = 25°C

150

225

IC = 0.4 Adc

@ TC = 125°C

175

Storage Time

@ TC = 25°C

1.65

1.95

μs

IB1 = 40 mAdc

@ TC = 125°C

2.2

IB2 = 40 mAdc

Crossover Time

@ TC = 25°C

150

250

@ TC = 125°C

330

Motorola Bipolar Power Transistor Device Data

BUD44D2

TYPICAL STATIC CHARACTERISTICS

	100
		VCE = 1 V
GAIN	80
GAIN		TJ = 125°C
CURRENT	60		TJ = 25°C
CURRENT	40
DC	40	T	J	= ± 20°C
DC		T		= ± 20°C
,
FE
h	20
	20
	0
	0.001			0.01	0.1	1	10
				IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	4			TJ = 25°C
				TJ = 25°C
(VOLTS)	3			2 A
			1.5 A
			1 A
, VOLTAGE	2		1 A
	2
		400 mA

CE
V	1
	1
		IC = 200 mA
	0
	1	10	100	1000
		IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	10
		IC/IB = 10
(VOLTS)					TJ = 25°C
VOLTAGE					TJ = 25°C
	1
			T	J	= 125°C
,				J	TJ = ± 20°C
CE					TJ = ± 20°C
V
	0.1
	0.001	0.01	0.1		1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
		VCE = 5 V
GAIN	80
GAIN		TJ = 125°C
CURRENT	60	TJ = 25°C
		TJ = 25°C
	40
DC	40	T	J	= ± 20°C
DC		T		= ± 20°C
,
FE
h	20
	20
	0
	0.001	0.01			0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volt

	10
		IC/IB = 5			TJ = 25°C
(VOLTS)				TJ = 125°C
(VOLTS)
, VOLTAGE	1
, VOLTAGE
CE				TJ = ± 20°C
V
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	10
		IC/IB = 20
(VOLTS)				TJ = 25°C
,VOLTAGE				TJ = 25°C
	1
			TJ = 125°C
CE			TJ = 125°C
CE
V
				TJ = ± 20°C
	0.1
	0.001	0.01	0.1	1
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector±Emitter Saturation Voltage

4	Motorola Bipolar Power Transistor Device Data

BUD44D2

TYPICAL STATIC CHARACTERISTICS

	10
		IC/IB = 5
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE				TJ = 125°C
BE				TJ = 125°C
BE
V
			TJ = 25°C
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 7A. Base±Emitter Saturation Region

	10
		IC/IB = 20
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE				TJ = 125°C
BE
V			TJ = 25°C
			TJ = 25°C
	0.1
	0.001	0.01	0.1	1
		IC, COLLECTOR CURRENT (AMPS)

Figure 7C. Base±Emitter Saturation Region

	10
		IC/IB = 10
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE				TJ = 125°C
BE				TJ = 125°C
BE
V			TJ = 25°C
			TJ = 25°C
	0.1			1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 7B. Base±Emitter Saturation Region

	10
(VOLTS)
VOLTAGE				25°C
VOLTAGE	1
FORWARD DIODE	1
				125°C

	0.1
	0.01	0.1	1	10

REVERSE EMITTER±COLLECTOR CURRENT (AMPS)

Figure 8. Forward Diode Voltage

Motorola Bipolar Power Transistor Device Data

BUD44D2
			TYPICAL SWITCHING CHARACTERISTICS
	1000					1000	TJ = 125°C	IBon = IBoff
	C	(pF)	TJ = 25°C				TJ = 125°C	IBon = IBoff
	C	(pF)	f	= 1 MHz			TJ = 25°C	VCC = 300 V
	ib		f	= 1 MHz
			(test)			800	IC/IB = 10	PW = 40 μs
						800	IC/IB = 10	PW = 40 μs
(pF)	100				(ns)TIMEt,		IC/IB = 5
CAPACITANCE					(ns)TIMEt,	600	IC/IB = 5
						600
			Cob (pF)
						400
C,	10
C,
						200
	1					0
	1	10		100		0.2	0.8	1.4	2
	VR, REVERSE VOLTAGE (VOLTS)						IC, COLLECTOR CURRENT (AMPS)

Figure 9. Capacitance

Figure 10. Resistive Switch Time, ton

	4000					IBon = IBoff
						IBon = IBoff
	3500	I	/I		= 10	VCC = 300 V
	3500		C B			PW = 40 μs
						PW = 40 μs
μs)	3000					IC/IB = 5
						IC/IB = 5

(
t, TIME	2500
t, TIME	2000
	2000
	1500	TJ = 125°C
		TJ = 25°C
	1000
	0			1		2

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switch Time, toff

	700
		TJ = 125°C	I	/I	= 5
	600	TJ = 25°C		C B
	600	TJ = 25°C
	500	IBon = IBoff
	500	VCC = 15 V
		VCC = 15 V
(ns)	400	VZ = 300 V				tc
(ns)	400	LC = 200 μH				tc
TIME	300
t,	300
t,
	200					tfi
						tfi
	100
	0
	0	0.5		1	1.5	2

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Switching,

tc & tfi @ IC/IB = 5

	3
	2.5
μs)	2
μs)
(
t, TIME	1.5
t, TIME	1
	1			IBon = IBoff
				IBon = IBoff
		TJ = 125°C		VCC = 15 V
	0.5	TJ = 125°C		VZ = 300 V
		TJ = 25°C		LC = 200 μH
	0		1.2
	0.4	0.8	1.2	1.6	2

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Inductive Storage Time,

			tsi @ IC/IB = 5
	4
		TJ = 125°C
		TJ = 25°C
s)	3
(μ		IC = 1 A
TIME		IC = 1 A
TIME
,STORAGE	2
,STORAGE				I	= I
si				I	= I
t	1			Bon	Boff
	1	IC = 0.3 A		VCC = 15 V
		IC = 0.3 A		VCC = 15 V
				VZ = 300 V
	0			LC = 200 μH
	0		9
	3	6	9	12	15

hFE, FORCED GAIN

Figure 14. Inductive Storage Time

6	Motorola Bipolar Power Transistor Device Data

BUD44D2

TYPICAL SWITCHING CHARACTERISTICS

	700
		IBoff = IBon		TJ = 125°C	I	C	= 0.3 A
	600	VCC = 15 V		TJ = 25°C		C
	600	VCC = 15 V		TJ = 25°C
		VZ = 300 V
(ns)	500	LC = 200 μH
(ns)
TIME	400
TIME
, FALL	300
, FALL
fi
t	200
	200
	100						IC = 1 A
							IC = 1 A
	0	5	7	9	11		13	15
	3	5	7	9	11		13	15

hFE, FORCED GAIN

Figure 15. Inductive Fall Time

	900	TJ = 125°C
	800	TJ = 125°C
	800	TJ = 25°C
	700			IC/IB = 20
				IC/IB = 20
	600
(ns)	500
TIME	400
t,	300
	300				IC/IB = 10
					IC/IB = 10
	200
	100			IBon = IBoff	VZ = 300 V
	0			VCC = 15 V	LC = 200 μH
	0	0.8		1.6
	0.4	0.8	1.2	1.6	2

IC, COLLECTOR CURRENT (AMPS)

Figure 17. Inductive Switching, tfi

3000					IBon = IBoff
	IC/IB = 5				IBon = IBoff
					VCC = 15 V
					VZ = 300 V
2000					LC = 200 μH
2000
t, TIME (ns)	IB = 50 mA
1000
		IB = 100 mA
		IB = 200 mA
0			IB = 500 mA
0
0	0.5	1	1.5	2	2.5	3
		IC, COLLECTOR CURRENT (AMPS)

Figure 19. Inductive Storage Time, tsi

	1000				TJ = 125°C
		I	= I	Boff	TJ = 125°C
		Bon		Boff	TJ = 25°C
		V	= 15 V		TJ = 25°C
	800	CC
(ns)	800	VZ = 300 V
(ns)		LC = 200 μH
TIME		LC = 200 μH				IC = 1 A
TIME	600					IC = 1 A
, CROSSOVER	600
	400

c
t	200
	200
						IC = 0.3 A
	0	3		6	9	12	15
		3		6	9	12	15

hFE, FORCED GAIN

Figure 16. Inductive Crossover Time

	2000	IBoff = IC/2
		IBoff = IC/2			TJ = 125°C
		VCC = 15 V			TJ = 25°C
	1500	VZ = 300 V
	1500	LC = 200	μH
		LC = 200	μH
(ns)					IC/IB = 20
(ns)
t, TIME	1000
t, TIME
	500
					IC/IB = 10
	0	0.4	0.8	1.2	1.6	2
		0.4	0.8	1.2	1.6	2

IC, COLLECTOR CURRENT (AMPS)

Figure 18. Inductive Switching, tc

	3000	IBon = IBoff
		IBon = IBoff
		VCC = 15 V
	2500	VZ = 300 V
		LC = 200 μH
t, TIME (ns)	2000
t, TIME (ns)	1500		IC/IB = 20
			IC/IB = 20
	1000	TJ = 125°C			IC/IB = 10
					IC/IB = 10

	500	TJ = 25°C
	500	0	0.5	1	1.5	2
		0	0.5	1	1.5	2
			IC, COLLECTOR CURRENT (AMPS)

Figure 20. Inductive Storage Time, tsi

Motorola Bipolar Power Transistor Device Data

BUD44D2

TYPICAL SWITCHING CHARACTERISTICS

VCE

dyn 1 μs

dyn 3 μs

0 V

90% IB

1 μs

3 μs

TIME

10
9	IC					90% IC
8				t		tfi
				t		tfi
7				si
7
6			10% Vclamp				10% IC
5	Vclamp		10% Vclamp			t	10% IC
						c
4
3	IB	90% IB1
2
1
0	1	2	3	4	5	6	7	8
0	1	2	3	4	5	6	7	8
				TIME

Figure 21. Dynamic Saturation

Figure 22. Inductive Switching Measurements

Voltage Measurements

		VFRM
			VFR (1.1 VF unless otherwise specified)
VF		tfr		VF
		tfr
	0.1 VF
0
IF
	10% IF
0	2	4	6	8	10

Figure 22 bis. tfr Measurements

8	Motorola Bipolar Power Transistor Device Data

BUD44D2

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 μF	150 Ω	100 Ω	MTP8P10	100 μF
1 μF	150 Ω	100 Ω	MTP8P10
	3 W	3 W
	3 W
MPF930			MTP8P10	RB1	VCE
MPF930			MUR105	RB1	IB1
	MPF930		MUR105		IB1
+10 V	MPF930			Iout	I
					B
				A
50 Ω			MJE210	RB2
				RB2

COMMON		150 Ω	MTP12N10		V(BR)CEO(sus)
	500 μF	3 W			L = 10 mH
		3 W			RB2 = ∞
					RB2 = ∞
				1 μF	VCC = 20 Volts
				1 μF	IC(pk) = 100 mA

±Voff

IC PEAK

VCE PEAK

IB2
Inductive Switching	RBSOA
L = 200 μH	L = 500 μH
RB2 = 0	RB2 = 0
VCC = 15 Volts	VCC = 15 Volts
RB1 selected for	RB1 selected for
desired IB1	desired IB1

TYPICAL STATIC CHARACTERISTICS

	1100
	1000		TJ = 25°C
	1000
	900	BVCER (VOLTS) @ 10 mA
(VOLTS)	900
	800

BVCER	700
BVCER		BVCER(sus) @ 200 mA
	600	BVCER(sus) @ 200 mA
	600
	500
	400
	10	100	1000
		RBE (Ω)

Figure 23. BVCER

	440			dI/dt = 10 A/μs
(ns)				dI/dt = 10 A/μs
(ns)	420			TC = 25°C
TIME	420			TC = 25°C
TIME	400
RECOVERY	400
	380
	360
, FORWARD	360
	340

fr	320
t

	300
	0	0.5	1	1.5	2

IF, FORWARD CURRENT (AMP)

Figure 24. Forward Recovery Time tfr

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Motorola Bipolar Power Transistor Device Data

BUD44D2

PACKAGE DIMENSIONS

	B
V	R
	R
	4
1	2	3
S
±T±
SEATING
PLANE
F
	G

D 3 PL

0.13 (0.005) M T

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.235	0.250	5.97	6.35
B	0.250	0.265	6.35	6.73
C	0.086	0.094	2.19	2.38
D	0.027	0.035	0.69	0.88
E	0.033	0.040	0.84	1.01
F	0.037	0.047	0.94	1.19
G	0.090	BSC	2.29	BSC
H	0.034	0.040	0.87	1.01
J	0.018	0.023	0.46	0.58
K	0.350	0.380	8.89	9.65
R	0.175	0.215	4.45	5.46
S	0.050	0.090	1.27	2.28
V	0.030	0.050	0.77	1.27

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

CASE 369±07

ISSUE K

			±T±	SEATING
				PLANE
	B		C
V	R		E
	4			Z
			A	Z
S			A
S
1	2	3		U
			K	U
			K
F			J
		L	H
			H

D 2 PL

G	0.13 (0.005) M T

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.235	0.250	5.97	6.35
B	0.250	0.265	6.35	6.73
C	0.086	0.094	2.19	2.38
D	0.027	0.035	0.69	0.88
E	0.033	0.040	0.84	1.01
F	0.037	0.047	0.94	1.19
G	0.180 BSC		4.58 BSC
H	0.034	0.040	0.87	1.01
J	0.018	0.023	0.46	0.58
K	0.102	0.114	2.60	2.89
L	0.090 BSC		2.29 BSC
R	0.175	0.215	4.45	5.46
S	0.020	0.050	0.51	1.27
U	0.020	±±±	0.51	±±±
V	0.030	0.050	0.77	1.27
Z	0.138	±±±	3.51	±±±

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

			CASE 369A±13
			ISSUE W

	How to reach us:
	USA / EUROPE: Motorola Literature Distribution;		JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
	P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447		6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
	MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
	INTERNET: http://Design±NET.com		51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298


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