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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE4342/D

High-Voltage High Power

Transistors

. . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

• High Collector±Emitter Sustaining Voltage Ð

NPN	PNP
VCEO(sus) = 140 Vdc Ð MJE4342	MJE4352
VCEO(sus) = 160 Vdc Ð MJE4343	MJE4353

•High DC Current Gain Ð @ I C = 8.0 Adc hFE = 35 (Typ)

•Low Collector±Emitter Saturation Voltage Ð VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc

MAXIMUM RATINGS

		MJE4342		MJE4343
Rating	Symbol	MJE4352		MJE4353	Unit

Collector±Emitter Voltage	VCEO	140		160	Vdc
Collector±Base Voltage	VCB	140		160	Vdc
Emitter±Base Voltage	VEB		7.0		Vdc
Collector Current Ð Continuous	IC		16		Adc
Peak (1)			20

Base Current Ð Continuous	IB		5.0		Adc
Total Power Dissipation @ TC = 25_C	PD		125		Watts
Operating and Storage Junction	TJ, Tstg	± 65 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic		Symbol			Max			Unit

Thermal Resistance, Junction to Case		RθJC			1.0			_C/W
(1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%.
(WATTS)	3.5


	3.0
DISSIPATION	3.0
DISSIPATION	2.5
	2.5
	2.0
	2.0
POWER,	1.5
POWER,	1.0
D	1.0
D
P	0.5
	0.5

	0	25	50	75	100	125	150
			TA, AMBIENT TEMPERATURE (°C)

Figure 1. Power Derating

Reference: Ambient Temperature

REV 2

NPN

MJE4342

MJE4343

PNP

MJE4352

MJE4353

16 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

140 ± 160 VOLTS

CASE 340D±01

TO±218 TYPE

Motorola, Inc. 1995

MJE4342		MJE4343	MJE4352	MJE4353
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

			Characteristic			Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)					VCEO(sus)	140	Ð	Vdc
	(IC = 200 mAdc, IB = 0)				MJE4342, MJE4352		160	Ð
					MJE4343, MJE4353

	Collector±Emitter Cutoff Current					ICEO	Ð	750	μAdc
	(VCE = 70 Vdc, IB = 0)				MJE4342, MJE4352		Ð	750
	(VCE = 80 Vdc, IB = 0				MJE4343, MJE4353
	Collector±Emitter Cutoff Current					ICEX	Ð	1.0	mAdc
	(VCE = Rated VCB, VEB(off) = 1.5 Vdc)						Ð	5.0
	(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
	Collector±Base Cutoff Current					ICBO	Ð	750	μAdc
	Collector±Base Cutoff Current					ICBO	Ð	750	μAdc
	(VCB = Rated VCB, IE = 0)
	Emitter±Base Cutoff Current					IEBO	Ð	1.0	mAdc
	(VBE = 7.0 Vdc, IC = 0)
	ON CHARACTERISTICS (1)

	DC Current Gain					hFE			Ð
	(IC = 8.0 Adc, VCE = 2.0 Vdc)						15	35 (Typ)
	(IC = 16 Adc, VCE = 4.0 Vdc)						8.0	15 (Typ)
	Collector±Emitter Saturation Voltage					VCE(sat)			Vdc
	(IC = 8.0 Adc, IB = 800 mA)						Ð	2.0
	(IC = 16 Adc, IB = 2.0 Adc)						Ð	3.5
	Base±Emitter Saturation Voltage					VBE(sat)	Ð	3.9	Vdc
	(IC = 16 Adc, IB = 2.0 Adc)
	Base±Emitter On Voltage					VBE(on)	Ð	3.9	Vdc
	(IC = 16 Adc, VCE = 4.0 Vdc)
	DYNAMIC CHARACTERISTICS

	Current±Gain Ð Bandwidth Product (2)					fT	1.0	Ð	MHz
	(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
	Output Capacitance					Cob	Ð	800	pF
	(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle w 2.0%.

(2)fT = hfe•ftest.

		VCC
		+ 30 V		3.0
				3.0						TJ = 25°C
				2.0						TJ = 25°C
	25 μs	RC								IC/IB = 10
+11 V	25 μs	SCOPE		1.0						VCE = 30 V
+11 V		RB		0.7
0		RB		0.7					tr
0			μs)	0.5					tr
			μs)
± 9.0 V	51	D1	(
± 9.0 V	51	D1	TIME	0.3
				0.3
tr, tf ≤ 10 ns			t,	0.2
		± 4 V	t,

DUTY CYCLE = 1.0%
DUTY CYCLE = 1.0%				0.1
				0.1				td @ VBE(off) = 5.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS				0.07				td @ VBE(off) = 5.0 V
	D1 MUST BE FAST RECOVERY TYPE, e.g.:			0.05
	1N5825 USED ABOVE IB ≈ 100 mA			0.05
	1N5825 USED ABOVE IB ≈ 100 mA
	MSD6100 USED BELOW IB ≈ 100 mA			0.03	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20
Note: Reverse polarities to test PNP devices.				0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20
Note: Reverse polarities to test PNP devices.							IC, COLLECTOR CURRENT (AMP)
							IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit

Figure 3. Typical Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

MJE4342 MJE4343 MJE4352 MJE4353

TYPICAL CHARACTERISTICS

	5.0
								TJ = 25°C
	3.0					ts		IC/IB = 10
	3.0					ts		I	B1	= I	B2
								VCE = 30 V
μs)	2.0
μs)
t, TIME (
	1.0
	0.7					tf
	0.7
	0.5
	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0		10	20

IC, COLLECTOR CURRENT (AMP)

Figure 4. Turn±Off Time

	2.0
			TJ = 25°C
	1.6
(VOLTS)	1.2
(VOLTS)
V, VOLTAGE	0.8	VBE(sat) @ IC/IB = 10
	0.8
			VBE @ VCE = 2.0 V
			VBE @ VCE = 2.0 V
	0.4
		VCE(sat) @ IC/IB = 10
	0	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20
	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20
				IC, COLLECTOR CURRENT (AMP)

Figure 5. On Voltages

DC CURRENT GAIN

	1000
GAIN
, DC CURRENT	100
, DC CURRENT	50		VCE = 2 V
FE			T	J	= 150°C
h				J
	20		25°C
	20		± 55°C
	10
	0.2	0.5	1.0		2.0	5.0	10	20
			IC, COLLECTOR CURRENT (AMPS)

Figure 6. MJE4340 Series (NPN)

	1000
GAIN
DC CURRENT	100
DC CURRENT		V	CE	= 2 V
,			CE		TJ = 150°C
FE					TJ = 150°C
h					25°C
					25°C
					± 55°C
	10
	0.2	0.5	1.0		2.0	5.0	10	20
		IC, COLLECTOR CURRENT (AMPS)

Figure 7. MJE4350 Series (PNP)

(VOLTS)	2.0
(VOLTS)								TJ = 25°C
VOLTAGE	1.6
	IC = 4.0 A		8.0 A				16 A
	1.2
, COLLECTOR±EMITTER	1.2
	0.8
	0.4

CE	0
V	0
	0.05 0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0
			IB, BASE CURRENT (AMP)

Figure 8. Collector Saturation Region

Motorola Bipolar Power Transistor Device Data

MJE4342 MJE4343 MJE4352 MJE4353

EFFECTIVE TRANSIENT THERMAL	RESISTANCE (NORMALIZED)
r(t),

1.0
0.5		D = 0.5
0.5
		0.2
0.2		0.1
		0.1						θ	(t) = r(t) θ				P(pk)
								θ	(t) = r(t) θ				P(pk)
0.1		0.05						θJC	°	JC
								JC = 1.0 C/W MAX
0.05		0.02						D CURVES APPLY FOR POWER
		0.02						PULSE TRAIN SHOWN					t1
								PULSE TRAIN SHOWN
								READ TIME AT t1						t2
			0.01					READ TIME AT t1						t2
0.02	SINGLE PULSE							TJ(pk) ± TC = P(pk) θJC(t)					DUTY CYCLE, D = t1/t2
0.02	SINGLE PULSE												DUTY CYCLE, D = t1/t2
0.01		0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1000	2000
0.02		0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1000	2000
								t, TIME (ms)

Figure 9. Thermal Response

	100				SECONDARY BREAKDOWN LIMITED
	50				SECONDARY BREAKDOWN LIMITED
(AMP)	50				THERMAL LIMIT TC = 25°C
(AMP)	20				BONDING WIRE LIMITED
					BONDING WIRE LIMITED
CURRENT	10					5.0 ms
CURRENT

	5.0				dc
COLLECTOR	5.0
COLLECTOR	0.5					MJE4342
	2.0
	1.0
,						MJE4352
C
I	0.2					MJE4343
						MJE4343
						MJE4353
	0.1					MJE4353
	0.1						50	70	100
	3.0	5.0	7.0	10	20	30	50	70	100	150 200

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 10. Maximum Forward Bias Safe

Operating Area

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current conditions during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 11 gives RBSOA characteristics.

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 10 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 9.

	20
(AMPS)	16
CURRENT	16					TJ = 100°C
						VBE(off) ≤ 5 V
	12
COLLECTOR	12
	8.0
			MJE4342
,			MJE4352
C
I	4.0
	4.0		MJE4343
			MJE4353
	20	40	60	80	100	120	140	160	180

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 11. Maximum Reverse Bias Safe

Operating Area

4	Motorola Bipolar Power Transistor Device Data

MJE4342 MJE4343 MJE4352 MJE4353

PACKAGE DIMENSIONS

Q E

1 2 3

D J

CASE 340D±01

TO±218 TYPE

ISSUE A

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETER.

	MILLIMETERS		INCHES
DIM	MIN	MAX	MIN	MAX
A	19.00	19.60	0.749	0.771
B	14.00	14.50	0.551	0.570
C	4.20	4.70	0.165	0.185
D	1.00	1.30	0.040	0.051
E	1.45	1.65	0.058	0.064
G	5.21	5.72	0.206	0.225
H	2.60	3.00	0.103	0.118
J	0.40	0.60	0.016	0.023
K	28.50	32.00	1.123	1.259
L	14.70	15.30	0.579	0.602
Q	4.00	4.25	0.158	0.167
S	17.50	18.10	0.689	0.712
U	3.40	3.80	0.134	0.149
V	1.50	2.00	0.060	0.078

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

Motorola Bipolar Power Transistor Device Data

MJE4342 MJE4343 MJE4352 MJE4353

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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