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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJL21193/D

Silicon Power Transistors

The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Total Harmonic Distortion Characterized

High DC Current Gain ± hFE = 25 Min @ IC = 8 Adc

Excellent Gain Linearity

High SOA: 2.25 A, 80 V, 1 Second

PNP

MJL21193*

NPN

MJL21194*

*Motorola Preferred Device

16 AMPERE

COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS

200 WATTS

CASE 340G±02

TO±3PBL

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

250

Vdc

Collector±Base Voltage

VCBO

400

Vdc

Emitter±Base Voltage

VEBO

5

Vdc

Collector±Emitter Voltage ± 1.5 V

VCEX

400

Vdc

Collector Current Ð Continuous

IC

16

Adc

Collector Current Ð Peak (1)

 

30

 

Base Current ± Continuous

IB

5

Adc

Total Power Dissipation @ TC = 25°C

PD

200

Watts

Derate Above 25°C

 

1.43

W/°C

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

 

 

Symbol

Max

Unit

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

 

RθJC

0.7

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

Characteristic

Symbol

Min

Typical

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

VCEO(sus)

250

Ð

Ð

Vdc

(IC = 100 mAdc, IB = 0)

 

 

 

 

 

Collector Cutoff Current

ICEO

Ð

Ð

100

μAdc

(VCE = 200 Vdc, IB = 0)

 

 

 

 

 

(1) Pulse Test: Pulse Width = 5.0 μs, Duty Cycle 10%.

 

 

 

 

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MJL21193

MJL21194

 

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Typical

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter Cutoff Current

 

IEBO

Ð

Ð

100

μAdc

 

(VCE = 5 Vdc, IC = 0)

 

 

 

 

 

 

 

Collector Cutoff Current

 

ICEX

Ð

Ð

100

μAdc

 

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

 

 

 

 

 

 

 

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

IS/b

 

 

 

Adc

 

(VCE = 50 Vdc, t = 1 s (non±repetitive)

 

 

4.0

Ð

Ð

 

 

(VCE = 80 Vdc, t = 1 s (non±repetitive)

 

 

2.25

Ð

Ð

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

 

 

 

(IC = 8 Adc, VCE = 5 Vdc)

 

 

25

Ð

75

 

 

(IC = 16 Adc, IB = 5 Adc)

 

 

8

Ð

Ð

 

 

Base±Emitter On Voltage

 

VBE(on)

Ð

Ð

2.2

Vdc

 

(IC = 8 Adc, VCE = 5 Vdc)

 

 

 

 

 

 

 

Collector±Emitter Saturation Voltage

 

VCE(sat)

 

 

 

Vdc

 

(IC = 8 Adc, IB = 0.8 Adc)

 

 

Ð

Ð

1.4

 

 

(IC = 16 Adc, IB = 3.2 Adc)

 

 

Ð

Ð

4

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Total Harmonic Distortion at the Output

 

THD

 

 

 

%

 

VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS

hFE

 

 

 

 

 

 

 

 

unmatched

 

Ð

0.8

Ð

 

 

(Matched pair hFE = 50 @ 5 A/5 V)

hFE

 

 

 

 

 

 

 

 

matched

 

Ð

0.08

Ð

 

 

 

 

 

 

 

 

 

 

Current Gain Bandwidth Product

 

fT

4

Ð

Ð

MHz

 

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

 

 

 

 

 

 

 

Output Capacitance

 

Cob

Ð

Ð

500

pF

 

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

 

 

 

 

 

 

 

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle 2%

 

 

 

 

 

 

PNP MJL21193

(MHz)

6.5

VCE = 10 V

 

6.0

 

PRODUCT

 

 

5.5

5 V

 

 

 

GAIN BANDWIDTH

 

 

5.0

 

 

4.5

 

 

4.0

 

 

, CURRENT

3.5

TJ = 25°C

 

 

ftest = 1 MHz

 

3.0

 

 

T

 

 

f

1.0

10

 

0.1

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

 

 

NPN MJL21194

 

(MHz)

8.0

 

 

 

 

 

PRODUCT

7.0

 

 

6.0

 

10 V

 

 

 

 

 

BANDWIDTH

5.0

VCE = 5 V

 

4.0

 

 

 

3.0

 

 

GAIN

 

 

2.0

 

 

, CURRENT

 

 

1.0

TJ = 25°C

 

ftest = 1 MHz

 

 

 

0

 

 

T

 

 

f

1.0

10

 

0.1

IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain

Bandwidth Product

2

Motorola Bipolar Power Transistor Device Data

1000

GAIN

 

CURRENTDC,

100

 

FE

 

h

 

 

10

 

0.1

1000

GAIN

 

CURRENTDC,

100

 

FE

 

h

 

 

10

 

0.1

MJL21193 MJL21194

TYPICAL CHARACTERISTICS

PNP MJL21193

TJ = 100°C

25°C

± 25°C

VCE = 20 V

1.0 10 100

IC COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V

PNP MJL21193

TJ = 100°C

25°C

± 25°C

VCE = 5 V

1.0 10 100

IC COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, VCE = 5 V

NPN MJL21194

1000

GAIN

TJ = 100°C

CURRENT

25°C

 

 

100

, DC

± 25°C

 

FE

 

h

 

VCE = 20 V

10

0.1 1.0 10 100 IC COLLECTOR CURRENT (AMPS)

Figure 4. DC Current Gain, VCE = 20 V

NPN MJL21194

1000

GAIN

 

 

TJ = 100°C

 

CURRENT

 

 

25°C

 

 

 

 

 

 

100

 

 

 

, DC

 

 

 

± 25°C

 

 

 

 

FE

 

 

 

 

h

 

 

 

 

 

 

VCE = 20 V

 

 

 

10

 

 

 

 

0.1

1.0

10

100

IC COLLECTOR CURRENT (AMPS)

Figure 6. DC Current Gain, VCE = 5 V

 

 

 

PNP MJL21193

 

 

 

30

 

 

 

 

 

 

25

 

1.5 A

 

IB = 2 A

 

(A)

 

 

 

(A)

 

 

 

 

 

 

 

 

 

CURRENT

20

 

 

 

1 A

CURRENT

 

 

 

 

 

COLLECTOR,

 

 

 

 

COLLECTOR,

15

 

 

 

0.5 A

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

C

5.0

 

 

 

 

C

I

 

 

 

 

I

 

 

 

 

 

TJ = 25°C

 

 

0

 

 

 

 

 

 

0

5.0

10

15

20

25

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

NPN MJL21194

35

IB = 2 A

30

1.5 A

25

 

1 A

20

 

15

0.5 A

10

 

5.0

 

 

 

 

TJ = 25°C

 

0

 

 

 

 

 

0

5.0

10

15

20

25

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

Figure 8. Typical Output Characteristics

Motorola Bipolar Power Transistor Device Data

3

MJL21193 MJL21194

TYPICAL CHARACTERISTICS

SATURATION VOLTAGE (VOLTS)

VBE(on)

, BASE±EMITTER VOLTAGE (VOLTS)

 

PNP MJL21193

 

 

 

NPN MJL21194

 

3.0

 

 

 

 

1.4

 

 

 

2.5

TJ = 25°C

 

 

(VOLTS)

1.2

TJ = 25°C

 

 

 

 

 

IC/IB = 10

 

 

 

IC/IB = 10

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

VOLTAGE

0.8

 

VBE(sat)

 

1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SATURATION

0.6

 

 

 

1.0

VBE(sat)

 

 

0.4

 

 

 

 

 

 

 

 

 

0.5

 

VCE(sat)

 

 

0.2

 

VCE(sat)

 

0

 

 

 

0

 

 

0.1

1.0

10

100

 

0.1

1.0

10

100

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 9. Typical Saturation Voltages

 

 

 

Figure 10. Typical Saturation Voltages

 

 

PNP MJL21193

 

 

 

NPN MJL21194

 

10

 

 

 

(VOLTS)

10

 

 

 

 

TJ = 25°C

 

 

 

TJ = 25°C

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

VCE = 20 V (SOLID)

 

 

 

 

 

BASE±EMITTER,

 

 

1.0

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

 

1.0

 

VCE = 5 V (DASHED)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BE(on)

 

 

 

 

0.1

 

 

 

V

0.1

 

 

 

 

 

 

 

 

 

 

0.1

1.0

10

100

 

0.1

1.0

10

100

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 11. Typical Base±Emitter Voltage

 

 

 

Figure 12. Typical Base±Emitter Voltage

 

 

100

 

 

 

(AMPS)

 

 

1 SEC

 

CURRENT

 

 

 

10

 

 

 

 

 

 

 

, COLLECTOR

1.0

TC = 25°C

 

 

 

 

 

 

 

 

 

C

 

 

 

 

I

 

 

 

 

 

0.1

 

 

 

 

1.0

10

100

1000

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 13. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

4

Motorola Bipolar Power Transistor Device Data

 

10000

 

 

 

 

 

TC = 25°C

Cib

 

 

 

 

 

CAPACITANCE (pF)

1000

 

 

 

C,

 

 

 

Cob

 

 

 

 

 

 

f(test) = 1 MHz)

 

 

 

100

 

 

 

 

0.1

1.0

10

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJL21193 Typical Capacitance

C, CAPACITANCE (pF)

 

MJL21193

MJL21194

10000

 

 

TC = 25°C

Cib

 

 

 

1000

Cob

f(test) = 1 MHz)

100

0.1 1.0 10 10

VR, REVERSE VOLTAGE (VOLTS)

Figure 15. MJL21194 Typical Capacitance

 

 

1.2

 

 

 

 

 

 

1.1

 

 

 

 

, TOTAL HARMONIC

DISTORTION (%)

1.0

 

 

 

 

0.9

 

 

 

 

0.8

 

 

 

 

HD

 

 

 

 

 

 

 

 

 

 

 

T

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

0.6

 

 

 

 

 

 

10

100

1000

10000

100000

FREQUENCY (Hz)

Figure 16. Typical Total Harmonic Distortion

 

 

+50 V

AUDIO PRECISION

 

 

MODEL ONE PLUS

SOURCE

50 Ω

TOTAL HARMONIC

AMPLIFIER

DUT

DISTORTION

 

 

ANALYZER

 

0.5 Ω

 

 

0.5 Ω

8.0

Ω

 

DUT

 

 

±50 V

 

 

Figure 17. Total Harmonic Distortion Test Circuit

Motorola Bipolar Power Transistor Device Data

5

MJL21193 MJL21194

PACKAGE DIMENSIONS

 

 

0.25 (0.010) M

T B M

 

±B±

±Q±

±T±

 

 

 

 

 

 

C

 

 

U

E

 

N

 

 

 

 

 

 

A

 

R

1 2 3

L

 

 

 

±Y± P

K

W

F 2 PL

G

J

D 3 PL

H

 

0.25 (0.010) M Y Q S

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETER.

 

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

A

2.8

2.9

1.102

1.142

B

19.3

20.3

0.760

0.800

C

4.7

5.3

0.185

0.209

D

0.93

1.48

0.037

0.058

E

1.9

2.1

0.075

0.083

F

2.2

2.4

0.087

0.102

G

5.45 BSC

0.215 BSC

H

2.6

3.0

0.102

0.118

J

0.43

0.78

0.017

0.031

K

17.6

18.8

0.693

0.740

L

11.0

11.4

0.433

0.449

N

3.95

4.75

0.156

0.187

P

2.2

2.6

0.087

0.102

Q

3.1

3.5

0.122

0.137

R

2.15

2.35

0.085

0.093

U

6.1

6.5

0.240

0.256

W

2.8

3.2

0.110

0.125

STYLE 2:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

CASE 340G±02

TO±3PBL

ISSUE E

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJL21193/D

*MJL21193/D*

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