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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUH50/D

BUH50

Designer's Data Sheet

SWITCHMODE NPN Silicon

Planar Power Transistor

The BUH50 has an application specific state±of±art die designed for use in 50 Watts HALOGEN electronic transformers and switchmode applications.

This high voltage/high speed transistor exhibits the following main feature:

•Improved Efficiency Due to Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

•Motorola ª6SIGMAº Philosophy Provides Tight and Reproductible Parametric Distributions

•Specified Dynamic Saturation Data

•Full Characterization at 125°C

MAXIMUM RATINGS

POWER TRANSISTOR

4 AMPERES

800 VOLTS

50 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	500	Vdc
Collector±Base Breakdown Voltage	VCBO	800	Vdc
Collector±Emitter Breakdown Voltage	VCES	800	Vdc
Emitter±Base Voltage	VEBO	9	Vdc
Collector Current Ð Continuous	IC	4	Adc
Ð Peak (1)	ICM	8
Base Current Ð Continuous	IB	2	Adc
Base Current Ð Peak (1)	IBM	4
*Total Device Dissipation @ TC = 25_C	PD	50	Watt
*Derate above 25°C		0.4	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance			_C/W
Ð Junction to Case	RqJC	2.5
Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes:	TL	260	_C
1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

BUH50

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage

VCEO(sus)

500

Vdc

(IC = 100 mA, L = 25 mH)

Collector Cutoff Current

ICEO

100

μAdc

(VCE = Rated VCEO, IB = 0)

Collector Cutoff Current

@ TC = 25°C

ICES

100

μAdc

(VCE = Rated VCES, VEB = 0)

@ TC = 125°C

1000

Emitter±Cutoff Current

IEBO

100

μAdc

(VEB = 9 Vdc, IC = 0)

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 1 Adc, IB = 0.33 Adc)

25°C

0.86

1.2

(IC = 2 Adc, IB = 0.66 Adc)

0.94

1.6

(IC = 2 Adc, IB = 0.66 Adc)

100°C

0.85

1.5

Collector±Emitter Saturation Voltage

@ TC = 25°C

VCE(sat)

Vdc

(IC = 1 Adc, IB = 0.33 Adc)

0.2

0.5

(IC = 2 Adc, IB = 0.66 Adc)

@ TC = 25°C

0.32

0.6

@ TC = 125°C

0.29

0.7

(IC = 3 Adc, IB = 1 Adc)

@ TC = 25°C

0.5

DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)

@ TC = 25°C

hFE

DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)

@ TC = 25°C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

Output Capacitance

Cob

100

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Input Capacitance

Cib

850

1200

(VEB = 8 Vdc)

DYNAMIC SATURATION VOLTAGE

= 1 A

@ 1 μs

@ TC = 25°C

VCE(dsat)

1.75

@ TC = 125 C

Dynamic Saturation

IB1 = 0.33 A

@ 3

μs

@ TC = 25°C

0.3

Voltage:

VCC = 300 V

Determined 1

s and

@ TC = 125°C

0.5

3 μs respectively after

@ 1

μs

@ TC = 25°C

rising IB1 reaches

= 2 A

90% of final IB1

@ TC = 125 C

= 0.66 A

@ 3

μs

@ TC = 25°C

0.75

= 300 V

@ TC = 125°C

2	Motorola Bipolar Power Transistor Device Data

							BUH50
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max	Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs)

Turn±on Time	IC = 2 Adc, IB1 = 0.4 Adc	@ TC = 25°C	ton		95	250	ns
	IB2 = 0.4 Adc
Turn±off Time	IB2 = 0.4 Adc	@ TC = 25°C	toff		2.5	3.5	μs
Turn±off Time	VCC = 125 Vdc	@ TC = 25°C	toff		2.5	3.5	μs
Turn±on Time	IC = 2 Adc, IB1 = 0.4 Adc	@ TC = 25°C	ton		110	250	ns
	IB2 = 1 Adc
Turn±off Time	IB2 = 1 Adc	@ TC = 25°C	toff		0.95	2	μs
Turn±off Time	VCC = 125 Vdc	@ TC = 25°C	toff		0.95	2	μs
Turn±on Time	IC = 1 Adc, IB1 = 0.3 Adc	@ TC = 25°C	ton		100	200	ns
	IB2 = 0.3 Adc
Turn±off Time	IB2 = 0.3 Adc	@ TC = 25°C	toff		2.9	3.5	μs
Turn±off Time	VCC = 125 Vdc	@ TC = 25°C	toff		2.9	3.5	μs
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)
Fall Time		@ TC = 25°C	tf		80	150	ns
	IC = 2 Adc	@ TC = 125°C			95
Storage Time	IC = 2 Adc	@ TC = 25°C	ts		1.2	2.5	μs
Storage Time	IB1 = 0.4 Adc	@ TC = 25°C	ts		1.2	2.5	μs
	IB1 = 0.4 Adc	@ TC = 125°C			1.7
	IB2 = 1 Adc	@ TC = 125°C			1.7
Crossover Time		@ TC = 25°C	tc		150	300	ns
		@ TC = 125°C			180
Fall Time		@ TC = 25°C	tf		90	150	ns
	IC = 2 Adc	@ TC = 125°C			100
Storage Time	IC = 2 Adc	@ TC = 25°C	ts		1.7	2.75	μs
Storage Time	IB1 = 0.66 Adc	@ TC = 25°C	ts		1.7	2.75	μs
	IB1 = 0.66 Adc	@ TC = 125°C			2.5
	IB2 = 1 Adc	@ TC = 125°C			2.5
Crossover Time		@ TC = 25°C	tc		190	350	ns
		@ TC = 125°C			220

TYPICAL STATIC CHARACTERISTICS

	100
				VCE = 1 V
GAIN	TJ = 125°C
GAIN
CURRENT	TJ = 25°C
	10
	TJ = ± 40°C
, DC
FE
h
	1
	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	100
				VCE = 5 V
GAIN	TJ = 125°C
GAIN
CURRENT	TJ = 25°C
	10
	TJ = ± 40°C
, DC
FE
h
	1
	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volt

Motorola Bipolar Power Transistor Device Data

BUH50

TYPICAL STATIC CHARACTERISTICS

	10
				TJ = 25°C
(VOLTS)			4 A
			4 A
VOLTAGE,			3 A
VOLTAGE,	1		2 A
	1

CE		1 A
V
		IC = 500 mA
	0.1
	0.01	0.1	1	10

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	10
		IC/IB = 5	TJ = ± 40°C
			TJ = ± 40°C
,VOLTAGE (VOLTS)	1
,VOLTAGE (VOLTS)	0.1
CE	0.1		TJ = 25°C
CE
V
		TJ = 125°C
	0.01
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	10
		IC/IB = 5
(VOLTS)
, VOLTAGE	1		TJ = 125°C
, VOLTAGE			TJ = ± 40°C
BE
V			TJ = 25°C
			TJ = 25°C
	0.1
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base±Emitter Saturation Region

	10
	IC/IB = 3
(VOLTS)
, VOLTAGE	1
, VOLTAGE	TJ = ± 40°C
CE	0.1	T	J	= 125°C
V			J
		TJ = 25°C
	0.01
	0.01	0.1		1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	10
		IC/IB = 3
(VOLTS)
, VOLTAGE	1	TJ = 125°C
, VOLTAGE		TJ = ± 40°C
BE		TJ = ± 40°C	TJ = 25°C
V			TJ = 25°C
	0.1
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base±Emitter Saturation Region

	10000
		TJ = 25°C
		f(test) = 1 MHz
	1000	Cib (pF)
(pF)	1000
(pF)
C, CAPACITANCE	100
		Cob (pF)
	10
	10
	1
	1	10	100
		VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

4	Motorola Bipolar Power Transistor Device Data

BUH50

TYPICAL SWITCHING CHARACTERISTICS

	3000		IBoff = IC/2
		TJ = 125°C	IBoff = IC/2
	2500	TJ = 25°C	VCC = 125 V
			PW = 20 μs
	2000
(ns)		IC/IB = 5
t, TIME	1500
t, TIME
	1000
	500
	0			IC/IB = 3
	0
	1	2	3	4	5

IC, COLLECTOR CURRENT (AMPS)

	4000
			TJ = 125°C	IBoff = IC/2
			TJ = 25°C	VCC = 125 V
	3000			PW = 20 μs
(ns)
TIME	2000			IC/IB = 3
TIME				IC/IB = 3
t,
	1000
	0	IC/IB = 5
	0	2	3
	1	2	3	4	5

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Resistive Switching, ton

Figure 10. Resistive Switch Time, toff

	4000
			IBoff = IC/2
		IC/IB = 3	VCC = 15 V
		IC/IB = 3	V	= 300 V
	3000		Z
	3000		LC = 200 μH
			LC = 200 μH
(ns)
t, TIME	2000
t, TIME
	1000
		TJ = 125°C
	0	TJ = 25°C	IC/IB = 5
	1	2	3	4

300			IBoff = IC/2
			IBoff = IC/2
			VCC = 15 V
			VZ = 300 V
200			LC = 200 μH
200
(ns)			tc
t, TIME
100
	t	fi	TJ = 125°C
		fi	TJ = 25°C
0			TJ = 25°C
1	2	3	4

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Storage Time, tsi	Figure 12. Inductive Storage Time,

tc & tfi @ IC/IB = 3

TYPICAL CHARACTERISTICS

250

= 125°C

4000

Boff

= I

TJ = 125 C

= 25°C

TJ = 25

V = 15 V

200

(μs)

3000

VZ = 300 V

LC = 200 μH

IC = 1 A

t, TIME (ns)

150

STORAGE TIME

2000

100

IBoff = IC/2

1000

VCC = 15 V

IC = 2 A

VZ = 300 V

tfi

LC = 200 μH

IC, COLLECTOR CURRENT (AMPS)

hFE, FORCED GAIN

Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5

Figure 14. Inductive Storage Time

Motorola Bipolar Power Transistor Device Data

BUH50

TYPICAL CHARACTERISTICS

150

350

IBoff = IC/2

140

IBoff = IC/2

130

IC = 1 A

VCC = 15 V

= 300 V

(ns)

VZ = 300 V

120

= 200 μH

IC = 1 A

LC = 200 μH

TIME (ns)

TIME

250

110

100

FALL

CROSSOVER

150

= 2 A

TJ = 125°C

= 2 A

TJ = 125 C

TJ = 25°C

TJ = 25

hFE, FORCED GAIN	hFE, FORCED GAIN
Figure 15. Inductive Fall Time	Figure 16. Inductive Crossover Time

	1
FACTOR	0.8				SECOND BREAKDOWN
	0.8					DERATING
						DERATING
	0.6
DERATING	0.6
		THERMAL DERATING
	0.4
POWER	0.4
POWER	0.2
	0.2
	0	40		80		120
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 17. Forward Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 20 is based

on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 20 may be found at any case temperature by using the appropriate curve on Figure 17.

TJ(pk) may be calculated from the data in Figure 22. At any case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 21). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

6	Motorola Bipolar Power Transistor Device Data

BUH50

TYPICAL CHARACTERISTICS

VCE

dyn 1 μs

dyn 3 μs

0 V

90% IB

1 μs

3 μs

TIME

10
9	IC					90% IC
8				t		tfi
				t		tfi
7				si
7
6			10% Vclamp				10% IC
5	Vclamp		10% Vclamp			t	10% IC
						c
4
3	IB	90% IB1
2
1
0	1	2	3	4	5	6	7	8
0	1	2	3	4	5	6	7	8
				TIME

Figure 18. Dynamic Saturation Voltage

Figure 19. Inductive Switching Measurements

	10			1 μs		5
		10	μ	1 μs			GAIN ≥ 3	TC ≤ 125°C
(AMPS)		10		s	(AMPS)			LC = 500 μH
(AMPS)		1 ms			(AMPS)	4
		1 ms
		5 ms
CURRENT		5 ms			CURRENT
CURRENT	1			EXTENDED	CURRENT
	1
						3
		DC		SOA
COLLECTOR,		DC			COLLECTOR,
COLLECTOR,					COLLECTOR,	1		± 5 V
						2
	0.1
C					C
I					I	0 V
						0 V	±1.5 V
	0.01					0
	10	100		1000		300	600	900
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)				VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 20. Forward Bias Safe Operating Area

Figure 21. Reverse Bias Safe Operating Area

Motorola Bipolar Power Transistor Device Data

BUH50
			TYPICAL CHARACTERISTICS
		Table 1. Inductive Load Switching Drive Circuit
+15 V
				100 μF		IC PEAK
1 μF	150 Ω	100 Ω	MTP8P10	100 μF
1 μF	150 Ω	100 Ω	MTP8P10
	3 W	3 W				VCE PEAK
	3 W					VCE PEAK
MPF930			MTP8P10	RB1	VCE
MPF930			MUR105	RB1	IB1
	MPF930		MUR105		IB1
+10 V	MPF930			Iout	I
					B
				A
50 Ω				RB2		IB2
50 Ω			MJE210


COMMON		150 Ω	MTP12N10		V(BR)CEO(sus)	Inductive Switching	RBSOA
		150 Ω	MTP12N10		V(BR)CEO(sus)	Inductive Switching	RBSOA
	500 μF	3 W			L = 10 mH	L = 200 μH	L = 500 μH
	500 μF				RB2 = ∞	RB2 = 0	RB2 = 0
					RB2 = ∞	RB2 = 0	RB2 = 0
				1 μF	VCC = 20 Volts	VCC = 15 Volts	VCC = 15 Volts
					IC(pk) = 100 mA	RB1 selected for	RB1 selected for
±Voff						desired IB1	desired IB1

		1
TRANSIENT THERMAL RESISTANCE			0.5
			0.2
	(NORMALIZED)		0.1			P(pk)	RθJC(t) = r(t) RθJC
		0.1	0.05				RθJC = 2.5°C/W MAX
							D CURVES APPLY FOR POWER
			0.02			t1	PULSE TRAIN SHOWN
			0.02			t1	READ TIME AT t1
						t	READ TIME AT t1
			SINGLE PULSE			2	TJ(pk) ± TC = P(pk) RθJC(t)
			SINGLE PULSE			DUTY CYCLE, D = t1/t2	TJ(pk) ± TC = P(pk) RθJC(t)
r(t),
		0.01
		0.01		0.1	1	10	100	1000

t, TIME (ms)

Figure 22. Typical Thermal Response (ZθJC(t)) for BUH50

8	Motorola Bipolar Power Transistor Device Data

BUH50

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

BUH50

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
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◊ BUH50/D

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