Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

mje1804d

.pdf

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

477.78 Кб

Скачать

☆

1 / 21 2 > Следующая >>>

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE18004D2/D

Designer's Data Sheet

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

The MJE18004D2 is state±of±art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Main features:

•Low Base Drive Requirement

•High Peak DC Current Gain (55 Typical) @ IC = 100 mA

•Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

•Integrated Collector±Emitter Free Wheeling Diode

•Fully Characterized and Guaranteed Dynamic VCE(sat)

•ª6 Sigmaº Process Providing Tight and Reproductible Parameter Spreads

It's characteristics make it also suitable for PFC application.

MAXIMUM RATINGS

MJE18004D2

POWER TRANSISTORS

5 AMPERES

1000 VOLTS

75 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	450	Vdc
Collector±Base Breakdown Voltage	VCBO	1000	Vdc
Collector±Emitter Breakdown Voltage	VCES	1000	Vdc
Emitter±Base Voltage	VEBO	12	Vdc
Collector Current Ð Continuous	IC	5	Adc
Collector Current Ð Peak (1)	ICM	10
Base Current Ð Continuous	IB	2	Adc
Base Current Ð Peak (1)	IBM	4
*Total Device Dissipation @ TC = 25_C	PD	75	Watt
*Derate above 25°C		0.6	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance Ð Junction to Case	RqJC	1.65	_C/W
Thermal Resistance Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes:	TL	260	_C
1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

MJE18004D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage

VCEO(sus)

450

547

Vdc

(IC = 100 mA, L = 25 mH)

Collector±Base Breakdown Voltage

VCBO

1000

1100

Vdc

(ICBO = 1 mA)

Emitter±Base Breakdown Voltage

VEBO

Vdc

(IEBO = 1 mA)

Collector Cutoff Current

ICEO

100

μAdc

(VCE = Rated VCEO, IB = 0)

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

@ TC = 25°C

ICES

100

μAdc

@ TC = 125°C

500

Collector Cutoff Current (VCE = 500 V, VEB = 0)

@ TC = 125°C

100

Emitter±Cutoff Current

IEBO

100

μAdc

(VEB = 10 Vdc, IC = 0)

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

@ TC = 25°C

VBE(sat)

Vdc

(IC = 0.8 Adc, IB = 80 mAdc)

0.8

@ TC = 125°C

0.7

0.9

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C

0.9

@ TC = 125°C

0.8

0.9

Collector±Emitter Saturation Voltage

@ TC = 25°C

VCE(sat)

Vdc

(IC = 0.8 Adc, IB = 80 mAdc)

0.38

0.5

@ TC = 125°C

0.55

0.75

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C

0.45

0.75

@ TC = 125°C

0.75

(IC = 0.8 Adc, IB = 40 mAdc)

@ TC = 25°C

0.9

1.5

@ TC = 125°C

1.6

(IC = 1 Adc, IB = 0.2 Adc)

@ TC = 25°C

0.25

0.5

@ TC = 125°C

0.28

0.6

DC Current Gain

@ TC = 25°C

hFE

(IC = 0.8 Adc, VCE = 1 Vdc)

@ TC = 125°C

(IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

(IC = 1 Adc, VCE = 2.5 Vdc)

@ TC = 25°C

@ TC = 125°C

DYNAMIC SATURATION VOLTAGE

= 1 Adc

@ 1 μs

@ TC = 25°C

VCE(dsat)

@ TC = 125 C

Dynamic Saturation

IB1 = 100 mA

@ 3 μs

@ TC = 25°C

3.1

Voltage:

VCC = 300 V

@ TC = 125°C

Determined 1 s and

3 μs respectively after

@ 1 μs

@ TC = 25°C

rising IB1 reaches

= 2 Adc

90% of final IB1

@ TC = 125 C

= 0.4 A

@ 3 μs

@ TC = 25°C

1.4

VCC = 300 V

@ TC = 125°C

2	Motorola Bipolar Power Transistor Device Data

MJE18004D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DIODE CHARACTERISTICS

Forward Diode Voltage

@ TC = 25°C

VEC

1.5

(IEC = 1 Adc)

0.96

@ TC = 125°C

0.72

(IEC = 2 Adc)

@ TC = 25°C

1.15

1.7

@ TC = 125°C

0.8

Forward Recovery Time

tfr

440

(IF = 0.4 Adc, di/dt = 10 A/μs)

@ TC = 25°C

(IF = 1 Adc, di/dt = 10 A/μs)

@ TC = 25°C

335

(IF = 2 Adc, di/dt = 10 A/μs)

@ TC = 25°C

335

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

Output Capacitance

Cob

100

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Input Capacitance

Cib

450

750

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

Turn±on Time

IC = 2.5 Adc, IB1 = 0.5 Adc

@ TC = 25°C

ton

500

750

IB2 = 1 Adc

Turn±off Time

@ TC = 25°C

toff

1.1

1.4

μs

= 250 Vdc

Turn±on Time

= 2 Adc, I

= 0.4 Adc

@ TC = 25°C

ton

100

150

@ TC = 125 C

IB2 = 1 Adc

Turn±off Time

@ TC = 25°C

toff

1.15

1.3

μs

VCC = 300 Vdc

@ TC = 125°C

1.6

Turn±on Time

I = 2.5 Adc, I

= 0.5 Adc

@ TC = 25°C

ton

120

150

500

@ TC = 125 C

IB2 = 0.5 Adc

Turn±off Time

@ TC = 25°C

toff

1.85

2.15

μs

VCC = 300 Vdc

@ TC = 125°C

2.6

SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)

Fall Time

@ TC = 25°C

130

175

= 2.5 Adc

@ TC = 125°C

300

IB1 = 500 mAdc

Storage Time

@ TC = 25°C

2.12

2.4

μs

IB2 = 500 mAdc

@ TC = 125°C

2.6

VZ = 350 V

Crossover Time

LC = 300 μH

@ TC = 25°C

355

500

@ TC = 125°C

750

Fall Time

@ TC = 25°C

150

= 2 Adc

@ TC = 125°C

230

IB1 = 400 mAdc

Storage Time

@ TC = 25°C

2.1

2.4

μs

IB2 = 400 mAdc

@ TC = 125°C

2.9

VZ = 300 V

Crossover Time

LC = 200 μH

@ TC = 25°C

300

450

@ TC = 125°C

700

Fall Time

@ TC = 25°C

= 1 Adc

@ TC = 125°C

100

IB1 = 100 mAdc

Storage Time

@ TC = 25°C

0.7

0.9

μs

IB2 = 500 mAdc

@ TC = 125°C

1.05

VZ = 300 V

Crossover Time

LC = 200 μH

@ TC = 25°C

120

@ TC = 125°C

160

Motorola Bipolar Power Transistor Device Data

MJE18004D2

TYPICAL STATIC CHARACTERISTICS

	100
				VCE = 1 V
GAIN	TJ = ± 20°C		TJ = 25°C
GAIN
, DC CURRENT	10
, DC CURRENT
FE				TJ = 125°C
h				TJ = 125°C
	1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	3
				TJ = 25°C
(VOLTS)	2			5 A
	2
			4 A
,VOLTAGE			4 A
			3 A
			2 A
	1	1 A
CE	1	1 A
CE
V
	IC = 500 mA
	0
	0.01	0.1	1	10
		IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

	10
		IC/IB = 10				TJ = 125°C
		IC/IB = 10
(VOLTS)
, VOLTAGE	1
, VOLTAGE
CE		T	J	= 25°C
V			J
	0.1	TJ = ± 20°C
	0.1
	0.001	0.01			0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
	TJ = 125°C				VCE = 5 V
					VCE = 5 V
GAIN	TJ = ± 20°C		TJ = 25°C
GAIN
, DC CURRENT	10
, DC CURRENT
FE
h
	1
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volt

	10
	I	/I	= 5		TJ = 125°C
		C B
(VOLTS)
, VOLTAGE	1				TJ = 25°C
	1

CE
V
	TJ = ± 20°C
	0.1
	0.001		0.01	0.1	1	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	10
	IC/IB = 20			TJ = 125°C
(VOLTS)					TJ = ± 20°C
, VOLTAGE	1
, VOLTAGE			TJ = 25°C
CE
V
	0.1			1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector±Emitter Saturation Voltage

4	Motorola Bipolar Power Transistor Device Data

MJE18004D2

TYPICAL STATIC CHARACTERISTICS

	10
		IC/IB = 5
(VOLTS)
, VOLTAGE	1	TJ = ± 20°C
		TJ = ± 20°C

BE		T	J	= 125°C	T	J	= 25°C
V			J			J
	0.1
	0.001	0.01		0.1			1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base±Emitter Saturation Region

	10
		IC/IB = 20
(VOLTS)
, VOLTAGE	1	TJ = ± 20°C
		TJ = ± 20°C

BE		TJ = 125°C		TJ = 25°C
V		TJ = 125°C		TJ = 25°C
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 9. Base±Emitter Saturation Region

	1000
		Cib (pF)	TJ = 25°C
			f(test) = 1 MHz
(pF)
C, CAPACITANCE	100
C, CAPACITANCE			Cob
	10
	1	10	100
		VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

	10
		IC/IB = 10
(VOLTS)
, VOLTAGE	1	TJ = ± 20°C
, VOLTAGE
BE		TJ = 125°C		TJ = 25°C
V		TJ = 125°C		TJ = 25°C
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 8. Base±Emitter Saturation Region

	10
(VOLTS)
VOLTAGE	1			25°C
VOLTAGE
DIODE
DIODE
FORWARD			125°C
FORWARD
	0.1		1
	0.01	0.1	1	10

REVERSE EMITTER±COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage

(VOLTS)	1200
			TC = 25°C
		BVCER @ ICER = 10 mA
EMITTER VOLTAGE		BVCER @ ICER = 10 mA
	1000

COLLECTOR	800
		BVCER(sus) @
		ICER = 200 mA,
		Lc = 25 mH
	600
	10	100	1000
		BASE±EMITTER RESISTOR (Ω)

Figure 12. BVCER = f(RBE)

Motorola Bipolar Power Transistor Device Data

MJE18004D2

TYPICAL SWITCHING CHARACTERISTICS

	3200	TJ = 125°C	IBon = IBoff
		TJ = 125°C	IBon = IBoff
		°	V	CC	= 300 V
		TJ = 25 C		CC
	2400	IC/IB = 10	PW = 20 μs
	2400	IC/IB = 10
(ns)
t, TIME	1600
t, TIME
	800
	0					IC/IB = 5
	0
	1	2			3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Resistive Switch Time, ton

	4
				IC/IB = 5
	3
μs)
(
t, TIME	2
t, TIME
	1			IBon = IBoff
	1			VCC = 15 V
		TJ = 125°C		VCC = 15 V
		TJ = 125°C		V	= 300 V
		TJ = 25°C		Z	= 200 μH
		TJ = 25°C		L	= 200 μH
	0			C
	0
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

					tsi @ IC/IB = 5
	1000			TJ = 125°C
				TJ = 125°C	IC/IB	= 5
				TJ = 25°C	IC/IB	= 5
	800			TJ = 25°C
	800
		IBon = IBoff					tc
(ns)	600	V	CC	= 15 V			tc
	600	VZ = 300 V
		VZ = 300 V
t, TIME		LC = 200 μH
t, TIME	400
	200						tfi
	200
	0	0		1	2	3	4
		0		1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 17. Inductive Switching Time,

tc & tfi @ IC/IB = 5

	5
			IC/IB = 10			IBon = IBoff
	4		IC/IB = 10			VCC = 300 V
	4					PW = 20 μs
						PW = 20 μs
μs)	3
μs)
t, TIME (	2
	1	TJ = 125°C
		TJ = 125°C
		TJ = 25°C	I	/I	= 5
				C B
	0
	1	2			3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 14. Resistive Switch Time, toff

	4
				IC/IB = 10
	3
μs)
(
t, TIME	2
t, TIME
	1			IBon = IBoff
	1			VCC = 15 V
		TJ = 125°C		VCC = 15 V
		TJ = 125°C		V	= 300 V
		TJ = 25°C		Z	= 200 μH
		TJ = 25°C		L	= 200 μH
	0			C
	0
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 16. Inductive Storage Time,

			tsi @ IC/IB = 10
	1000	TJ = 125°C
		TJ = 125°C
	800	TJ = 25°C	IC/IB = 10
	800
		IBoff = IBon
(ns)	600	VCC = 15 V
(ns)	600	VZ = 300 V
t, TIME		LC = 200 μH
t, TIME	400
	200
	0		2
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 18. Inductive Switching Time,

tfi @ IC/IB = 10

6	Motorola Bipolar Power Transistor Device Data

MJE18004D2

TYPICAL SWITCHING CHARACTERISTICS

	1600		IC/IB = 10
		IBoff = IBon	IC/IB = 10
		VCC = 15 V
	1200	VZ = 300 V
		LC = 200 μH
(ns)
t, TIME	800
t, TIME
	400			TJ = 125°C
				TJ = 125°C
				TJ = 25°C
	0
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

	5	IBon = IBoff
		IBon = IBoff		TJ = 125°C
		VCC = 15 V	I = 1 A	T	J	= 25°C
		VZ = 300 V	C		J
(μs)		VZ = 300 V
(μs)	4	LC = 200 μH
TIME	4
TIME		IC = 2 A
, STORAGE	3
si
t
	2
	0	5	10	15		20

hFE, FORCED GAIN

	Figure 19. Inductive Switching, tc @ IC/IB = 10
	1000				TJ = 125°C						2000
		IBoff = IBon			TJ = 125°C		I	= 2 A
		VCC = 15 V			TJ = 25°C		C
	800	VCC = 15 V			TJ = 25°C
	800	V = 300 V								(ns)
		Z	μH							(ns)	1500
TIME (ns)		LC = 200	μH							TIME
	600
									IC = 1 A		1000
FALL									IC = 1 A	CROSSOVER	1000
FALL	400
,
fi
t
										,	500
										c
	200									t
	200
	0										0
	2	4	6	8	10	12	14	16	18	20

Figure 20. Inductive Storage Time

I	= I		°
Bon	Boff	TJ = 125 C
V	= 15 V	TJ = 25	°
CC		TJ = 25	C
VZ = 300 V
LC = 200 μH				IC = 2 A
				IC = 2 A
				IC = 1 A
2	8		14	20

hFE, FORCED GAIN	hFE, FORCED GAIN
Figure 21. Inductive Fall Time	Figure 22. Inductive Crossover Time

4						IBon = IBoff
						IBon = IBoff
						VCC = 15 V
	IB = 50 mA					VZ = 300 V
3						LC = 200 μH
μs)
t, TIME (
2
	IB = 100 mA
	IB = 200 mA
1		IB = 500 mA	IB = 1 A
0.5	1	1.5	2	2.5	3	3.5	4

IC, COLLECTOR CURRENT (AMPS)

Figure 23. Inductive Storage Time, tsi

	420
(ns)				dI/dt = 10 A/μs
(ns)				TC = 25°C
TIME				TC = 25°C
TIME
RECOVERY	380
RECOVERY
, FORWARD	340
, FORWARD
fr
t
	300			1.5
	0	0.5	1	1.5	2

IF, FORWARD CURRENT (AMP)

Figure 24. Forward Recovery Time, TFR

Motorola Bipolar Power Transistor Device Data

MJE18004D2

TYPICAL SWITCHING CHARACTERISTICS

	VCE
	dyn 1 μs
		dyn 3 μs
VOLTS	0 V
VOLTS
	90% IB
	1 μs
	IB	μs
	3	μs
		TIME

10
9	IC					90% IC
8			tsi			tfi
7			tsi
7
6							10% IC
5	Vclamp		10% Vclamp			tc	10% IC
4						tc
4
3	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 25. Dynamic Saturation

Figure 26. Inductive Switching Measurements

Voltage Measurements

		VFRM
			VFR (1.1 VF unless otherwise specified)
VF		tfr		VF
				VF

	0.1 VF
0
IF
	10% IF
0	2	4	6	8	10

Figure 27. tfr Measurements

8	Motorola Bipolar Power Transistor Device Data

MJE18004D2

TYPICAL SWITCHING CHARACTERISTICS

					Table 1. Inductive Load Switching Drive Circuit
+15 V
1	μF					MTP8P10	100 μF			IC PEAK
			100	Ω			100 μF

	150 Ω
	150 Ω		3 W						VCE PEAK
	3 W		3 W
	3 W
							MTP8P10	VCE
	MPF930					MUR105	RB1
+10 V	MPF930					MUR105	Iout	IB1
+10 V	MPF930						Iout	IB
							A	IB
							A
	50 Ω					MJE210	RB2		IB2
							RB2

COMMON					150 Ω		MTP12N10	V(BR)CEO(sus)	Inductive Switching	RBSOA
					150 Ω			L = 10 mH	L = 200 μH	L = 500 μH
	500	μ	F		3 W			L = 10 mH	L = 200 μH	L = 500 μH
		μ			3 W			RB2 = ∞	RB2 = 0	RB2 = 0
								RB2 = ∞	RB2 = 0	RB2 = 0
							1 μF	VCC = 20 Volts	VCC = 15 Volts	VCC = 15 Volts
							1 μF	IC(pk) = 100 mA	RB1 selected for	RB1 selected for
±Voff									desired Ib1	desired Ib1
±Voff

TYPICAL CHARACTERISTICS

	100
(AMPS)	10			1 μs
	10
		1 ms
CURRENT		1 ms	10	μs
		5 ms	10	μs
		5 ms
	1	DC		EXTENDED
				SOA
, COLLECTOR

	0.1

C
I
	0.01	100
	10	100		1000

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 28. Forward Bias Safe Operating Area

	6
(AMPS)				TC ≤ 125°C
	5			GAIN ≥	5
				LC = 2 mH
CURRENT	4
CURRENT	3
,COLLECTOR	3
	2			± 5 V
				± 5 V
	1
C	1		0 V	±1.5 V
I			0 V	±1.5 V
	0		600
	200	400	600	800	1000

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 29. Reverse Bias Safe Operating Area

Motorola Bipolar Power Transistor Device Data

MJE18004D2

TYPICAL CHARACTERISTICS

	1.0
							SECOND
FACTOR	0.8						BREAKDOWN
							DERATING
	0.6
DERATING	0.6
DERATING	0.4
POWER	0.2				THERMAL
	0.2				DERATING
					DERATING
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 30. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30.

TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base±to±emitter junction reverse biased. The safe level is specified as a reverse± biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

TYPICAL THERMAL RESPONSE

		1
TRANSIENT THERMAL RESISTANCE			0.5
			0.2
	(NORMALIZED)		0.1
		0.1	0.05		P(pk)	R	(t) = r(t) R
						θJC	θJC
						RθJC = 2.5°C/W MAX
			0.02			D CURVES APPLY FOR POWER
					t1	PULSE TRAIN SHOWN
			SINGLE PULSE		t1	READ TIME AT t1
			SINGLE PULSE		t2	READ TIME AT t1
r(t),					DUTY CYCLE, D = t1/t2	TJ(pk) ± TC = P(pk) RθJC(t)
		0.01
		0.01	0.1	1	10		100	1000

t, TIME (ms)

Figure 31. Typical Thermal Response (ZθJC(t)) for MJE18004D2

10	Motorola Bipolar Power Transistor Device Data

1 / 21 2 > Следующая >>>

Соседние файлы в папке Bipolar

#
06.01.2022432.87 Кб2MJE18004.PDF
#
06.01.2022425.02 Кб2MJE18006.PDF
#
06.01.2022431.83 Кб2MJE18008.PDF
#
06.01.2022443.78 Кб2MJE18009.PDF
#
06.01.2022156.34 Кб2mje1802d.pdf
#
06.01.2022477.78 Кб2mje1804d.pdf
#
06.01.2022495.95 Кб2MJE18204.PDF
#
06.01.2022516.68 Кб2MJE18206.PDF
#
06.01.2022222.46 Кб2MJE18604.PDF
#
06.01.2022156.34 Кб2MJE18_2D.PDF
#
06.01.2022477.78 Кб2MJE18_4D.PDF