MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP110/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general±purpose amplifier and low±speed switching applications.
• High DC Current Gain Ð
hFE = 2500 (Typ) @ IC = 1.0 Adc
• Collector±Emitter Sustaining Voltage Ð @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) Ð TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) Ð TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) Ð TIP112, TIP117
• Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
•Monolithic Construction with Built±in Base±Emitter Shunt Resistors
•TO±220AB Compact Package
*MAXIMUM RATINGS
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TIP110, |
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TIP111, |
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TIP112, |
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Rating |
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Symbol |
TIP115 |
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TIP116 |
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TIP117 |
Unit |
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Collector±Emitter Voltage |
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VCEO |
60 |
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80 |
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100 |
Vdc |
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Collector±Base Voltage |
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VCB |
60 |
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80 |
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100 |
Vdc |
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Emitter±Base Voltage |
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VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
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IC |
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2.0 |
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Adc |
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Peak |
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4.0 |
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Base Current |
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IB |
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50 |
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mAdc |
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Total Power Dissipation @ TC = 25_C |
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PD |
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50 |
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Watts |
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Derate above 25_C |
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0.4 |
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W/_C |
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Total Power Dissipation @ TA = 25_C |
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PD |
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2.0 |
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Watts |
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Derate above 25_C |
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0.016 |
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W/_C |
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Unclamped Inductive Load Energy Ð |
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E |
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25 |
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mJ |
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Figure 13 |
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Operating and Storage Junction |
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TJ, Tstg |
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± 65 to +150 |
_C |
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THERMAL CHARACTERISTICS |
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Characteristics |
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Max |
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Thermal Resistance, Junction to Case |
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RθJC |
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2.5 |
_C/W |
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Thermal Resistance, Junction to Ambient |
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RθJA |
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62.5 |
_C/W |
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NPN
TIP110
TIP111*
TIP112*
PNP
TIP115
TIP116*
TIP117*
*Motorola Preferred Device
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
60 ± 80 ± 100 VOLTS
50 WATTS
CASE 221A±06
TO±220AB
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TA |
TC |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
2.0 |
40 |
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,POWER |
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TC |
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1.0 |
20 |
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TA |
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D |
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P |
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0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
TIP110 |
TIP111 |
TIP112 |
TIP115 |
TIP116 |
TIP117 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 30 mAdc, IB = 0) |
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TIP110, TIP115 |
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60 |
Ð |
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TIP111, TIP116 |
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80 |
Ð |
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TIP112, TIP117 |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 30 Vdc, IB = 0) |
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TIP110, TIP115 |
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2.0 |
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(VCE = 40 Vdc, IB = 0) |
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TIP111, TIP116 |
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Ð |
2.0 |
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(VCE = 50 Vdc, IB = 0) |
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TIP112 ,TIP117 |
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Ð |
2.0 |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 60 Vdc, IE = 0) |
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TIP110, TIP115 |
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Ð |
1.0 |
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(VCB = 80 Vdc, IE = 0) |
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TIP111, TIP116 |
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1.0 |
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(VCB = 100 Vdc, IE = 0) |
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TIP112, TIP117 |
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1.0 |
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Emitter Cutoff Current |
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IEBO |
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2.0 |
mAdc |
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(VBE = 5.0 Vdc, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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(IC = 1.0 Adc, VCE = 4.0 Vdc) |
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1000 |
Ð |
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(IC = 2.0 Adc, VCE = 4.0 Vdc) |
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500 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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2.5 |
Vdc |
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(IC = 2.0 Adc, IB = 8.0 mAdc) |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
2.8 |
Vdc |
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(IC = 2.0 Adc, VCE = 4.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
25 |
Ð |
Ð |
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(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
TIP115, TIP116, TIP117 |
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Ð |
200 |
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TIP110, TIP111, TIP112 |
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Ð |
100 |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1, MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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R |
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approx |
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B |
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+ 8.0 |
V |
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0 |
51 |
D1 |
≈ 8.0 k |
≈ 60 |
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V1 |
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+ 4.0 V |
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approx |
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±12 V |
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μ |
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25 |
for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0, RB and RC are varied |
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to obtain desired test currents. |
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DUTY CYCLE = 1.0%
For NPN test circuit, reverse diode, polarities and input pulses.
Figure 2. Switching Times Test Circuit
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4.0 |
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VCC = 30 V |
IB1 = IB2 |
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ts |
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I /I |
= 250 |
T |
J |
= 25°C |
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C B |
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2.0 |
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μs) |
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t |
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1.0 |
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f |
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t, TIME |
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0.8 |
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tr |
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0.6 |
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0.4 |
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PNP |
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td @ VBE(off) = 0 |
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0.2 |
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NPN |
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0.04 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
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2.0 |
4.0 |
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IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |
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TIP110 |
TIP111 |
TIP112 |
TIP115 |
TIP116 |
TIP117 |
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1.0 |
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TRANSIENTTHERMAL RESISTANCE |
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0.7 |
D = 0.5 |
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0.5 |
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0.3 |
0.2 |
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(NORMALIZED) |
0.2 |
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0.1 |
0.1 |
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P(pk) |
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ZθJC(t) = r(t) RθJC |
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0.07 |
0.05 |
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° |
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0.05 |
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RθJC = 2.5 C/W MAX |
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0.02 |
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D CURVES APPLY FOR POWER |
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0.03 |
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PULSE TRAIN SHOWN |
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t1 |
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READ TIME AT t1 |
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t |
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r(t), |
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0.02 |
0.01 |
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TJ(pk) ± TC = P(pk) ZθJC(t) |
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2 |
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SINGLE PULSE |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
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100 |
200 |
500 |
1.0 k |
t, TIME (ms)
Figure 4. Thermal Response
ACTIVE±REGION SAFE±OPERATING AREA
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10 |
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(AMPS) |
4.0 |
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1 ms |
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CURRENT |
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5 ms |
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2.0 |
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TJ = 150°C |
dc |
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1.0 |
BONDING WIRE LIMITED |
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,COLLECTOR |
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THERMALLY LIMITED |
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@ TC = 25°C (SINGLE PULSE) |
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SECONDARY BREAKDOWN LIMITED |
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TIP115 |
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C |
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CURVES APPLY BELOW |
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I |
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TIP116 |
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RATED VCEO |
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0.1 |
TIP117 |
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1.0 |
10 |
40 |
60 |
80 100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. TIP115, 116, 117
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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10 |
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(AMPS) |
4.0 |
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CURRENT |
2.0 |
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1.0 |
TJ = 150°C |
dc |
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BONDING WIRE LIMITED |
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,COLLECTOR |
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THERMALLY LIMITED |
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@ TC = 25°C (SINGLE PULSE) |
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SECONDARY BREAKDOWN LIMITED |
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CURVES APPLY BELOW |
TIP110 |
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C |
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I |
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TIP111 |
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RATED VCEO |
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0.1 |
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TIP112 |
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1.0 |
10 |
60 |
80 100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 6. TIP110, 111, 112 |
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200 |
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100 |
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TC = 25°C |
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(pF) |
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70 |
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CAPACITANCE |
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50 |
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Cob |
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30 |
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Cib |
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C, |
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20 |
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PNP |
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NPN |
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10 |
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4.0 6.0 |
10 |
20 |
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0.04 0.06 0.1 |
0.2 |
0.4 0.6 |
1.0 |
2.0 |
40 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data |
3 |
TIP110 |
TIP111 |
TIP112 |
TIP115 |
TIP116 |
TIP117 |
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NPN |
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PNP |
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TIP110, 111, 112 |
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TIP115, 116, 117 |
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6.0 k |
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6.0 k |
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4.0 k |
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TJ = 125°C |
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VCE = 3.0 V |
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4.0 k |
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TJ = 125°C |
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VCE = 3.0 V |
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GAIN |
3.0 k |
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GAIN |
3.0 k |
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25°C |
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25°C |
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2.0 k |
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2.0 k |
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CURRENT |
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CURRENT |
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± 55°C |
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± 55°C |
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1.0 k |
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1.0 k |
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, DC |
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, DC |
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800 |
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800 |
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FE |
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FE |
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h |
600 |
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h |
600 |
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400 |
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400 |
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300 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
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300 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
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0.04 |
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0.04 |
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IC, COLLECTOR CURRENT (AMP) |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 8. DC Current Gain
(VOLTS) |
3.4 |
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3.0 |
IC = |
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TJ = 25°C |
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VOLTAGE |
0.5 A |
1.0 A |
2.0 A |
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4.0 A |
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2.6 |
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COLLECTOR±EMITTER |
2.2 |
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1.8 |
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1.4 |
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1.0 |
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, |
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CE |
0.6 |
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V |
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50 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
100 |
||
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IB, BASE CURRENT (mA) |
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(VOLTS) |
3.4 |
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3.0 |
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TJ = 25°C |
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VOLTAGE |
IC = |
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2.6 |
0.5 A |
1.0 A |
2.0 A |
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4.0 A |
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COLLECTOR±EMITTER |
2.2 |
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1.8 |
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1.4 |
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1.0 |
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, |
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CE |
0.6 |
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V |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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IB, BASE CURRENT (mA) |
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Figure 9. Collector Saturation Region
|
2.2 |
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2.2 |
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TJ = 25°C |
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TJ = 25°C |
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1.8 |
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1.8 |
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(VOLTS) |
1.4 |
VBE(sat) @ IC/IB = 250 |
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(VOLTS) |
1.4 |
|
VBE(sat) @ IC/IB = 250 |
|
VBE @ VCE = 3.0 V |
|
|||||
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V |
BE |
@ V |
CE |
= 3.0 V |
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V, VOLTAGE |
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V, VOLTAGE |
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1.0 |
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1.0 |
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VCE(sat) @ IC/IB = 250 |
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VCE(sat) @ IC/IB = 250 |
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0.6 |
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0.6 |
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0.2 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
|
2.0 |
4.0 |
0.2 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
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0.04 |
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0.04 |
|||||||||||||||||
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IC, COLLECTOR CURRENT (AMP) |
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IC, COLLECTOR CURRENT (AMP) |
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|||||||
Figure 10. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
NPN
TIP110, 111, 112
(mV/°C) |
+ 0.8 |
*APPLIES FOR IC/IB ≤ hFE/3 |
|
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0 |
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COEFFICIENTS |
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± 0.8 |
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± 1.6 |
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25°C to 150°C |
|
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TEMPERATURE, |
± 2.4 |
* θVC for VCE(sat) |
|
± 55°C to 25°C |
|
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|
± 3.2 |
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25°C to 150°C |
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± 4.0 |
θVC for VBE |
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± 55°C to 25°C |
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V |
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θ |
± 4.8 |
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0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
|
|
0.04 |
||||||||
IC, COLLECTOR CURRENT (AMP)
PNP
TIP115, 116, 117
(mV/°C) |
+ 0.8 |
*APPLIES FOR IC/IB ≤ hFE/3 |
|
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||
0 |
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COEFFICIENTS |
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± 0.8 |
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25°C to 150°C |
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|
± 1.6 |
* θVC for VCE(sat) |
|
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||
TEMPERATURE, |
± 2.4 |
|
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± 55°C to 25°C |
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± 3.2 |
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25°C to 150°C |
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± 4.0 |
θVC for VBE |
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± 55°C to 25°C |
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V |
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θ |
± 4.8 |
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0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
|
|
0.04 |
||||||||
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
|
105 |
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105 |
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104 |
REVERSE |
|
FORWARD |
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|
4 |
REVERSE |
|
FORWARD |
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||||
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||
μA) |
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μA) |
10 |
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( |
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( |
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CURRENT |
103 |
VCE = 30 V |
|
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CURRENT |
103 |
VCE = 30 V |
|
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102 |
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102 |
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||
, COLLECTOR |
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|
, COLLECTOR |
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||
|
TJ = 150°C |
|
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|
TJ = 150°C |
|
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|
||||
101 |
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101 |
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0 |
° |
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0 |
100°C |
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C |
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C |
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I |
10 |
100 C |
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I |
10 |
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10±1 |
25°C |
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10±1 |
|
25°C |
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|||
|
± 0.4 |
± 0.2 |
0 |
+ 0.2 |
+ 0.4 |
+ 0.6 |
+ 0.8 + 1.0 |
+ 1.2 |
+ 1.4 |
|
± 0.4 |
± 0.2 |
0 |
+ 0.2 |
+ 0.4 |
+ 0.6 |
+ 0.8 + 1.0 |
+ 1.2 |
+ 1.4 |
||
|
± 0.6 |
|
± 0.6 |
||||||||||||||||||
|
|
|
VBE, BASE-EMITTER VOLTAGE (VOLTS) |
|
|
|
|
|
VBE, BASE-EMITTER VOLTAGE (VOLTS) |
|
|
||||||||||
Figure 12. Collector Cut-Off Region
TEST CIRCUIT |
VOLTAGE AND CURRENT WAVEFORMS |
|
|
|
VCE MONITOR |
|
0 V |
|||
|
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|
|
INPUT |
|
|
|
|
|
|
|
|
VOLTAGE |
MJE254 |
RBB1 |
|
|
|
100 mH |
|
± 5 V |
|
INPUT |
2 kΩ |
TUT |
+ |
|
|
|||
|
|
0.71 A |
||||||
50 Ω |
|
|
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|
|
VCC = 20 V |
||
RBB2 |
|
|
|
± |
IC |
COLLECTOR |
||
50 Ω |
|
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|
|
CURRENT |
|||
|
100 |
Ω |
R |
|
= |
|
MONITOR |
0 V |
VBB1 = 10 V |
+ |
|
|
|
|
VCER |
||
|
VBB2 = 0 |
S |
|
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|
|||
|
± |
0.1 |
Ω |
|
|
COLLECTOR |
||
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VOLTAGE |
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|
20 V |
VCE(sat)
Note A: Input pulse width is increased until ICM = 0.71 A, NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.
tw ≈ 3.5 ms (SEE NOTE A)
100 ms
Figure 13. Inductive Load Switching
Motorola Bipolar Power Transistor Device Data |
5 |
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
PACKAGE DIMENSIONS
|
|
|
|
±T± |
|
B |
|
F |
C |
|
|
|
T |
S |
4 |
|
|
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|
Q |
|
|
A |
|
1 |
2 |
3 |
U |
|
H |
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Z |
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K |
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L |
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R |
V |
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J |
G |
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D |
|
|
N |
|
|
|
SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
|
USA / EUROPE: Motorola Literature Distribution; |
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◊ TIP110/D
*TIP110/D*