MJW16206

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJW16206/D

SCANSWITCH

NPN Bipolar Power Deflection Transistors

For High and Very High Resolution CRT Monitors

The MJF16206 and the MJW16206 are state±of±the±art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors.

•1200 Volt VCES Breakdown Capability

•Typical Dynamic Desaturation Specified (New Turn±Off Characteristic)

•Maximum Repetitive Emitter±Base Avalanche Energy Specified (Industry First)

•High Current Capability: Performance Specified at 6.5 Amps

Continuous Rating Ð 12 Amps Max

Pulsed Rating Ð 15 Amps Max

•Isolated MJF16206 is UL Recognized

•Fast Switching: 100 ns Inductive Fall Time (Typ)

1000 ns Inductive Storage Time (Typ)

•Low Saturation Voltage

0.25Volts (Typ) at 6.5 Amps Collector Current

•High Emitter±Base Breakdown Capability For High Voltage Off Drive Circuits Ð

8.0V (Min)

MAXIMUM RATINGS

Rating		Symbol	Value	Unit

Collector±Emitter Breakdown Voltage		VCES	1200	Vdc
Collector±Emitter Sustaining Voltage		VCEO(sus)	500	Vdc
Emitter±Base Voltage		VEBO	8.0	Vdc
Isolation Voltage		VISOL	Ð	Vrms
(RMS for 1 sec., TA = 25_C,	Figure 19		Ð
Relative Humidity v 30%)	Figure 20		Ð

Collector Current Ð Continuous		IC	12	Adc
Collector Current Ð Pulsed (1)		ICM	15
Base Current Ð Continuous		IB	5.0	Adc
Base Current Ð Pulsed (1)		IBM	10
Repetitive Emitter±Base Avalanche Energy		W(BER)	0.2	mjoules
Total Power Dissipation @ TC = 25_C		PD	150	Watts
Total Power Dissipation @ TC = 100_C			39
Derated above 25_C			1.49	_
				W/ C
Operating and Storage Temperature		TJ, Tstg	± 55 to +150	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance Ð Junction to Case	RqJC	0.67	_C/W
Lead Temperature for Soldering Purposes 1/8″	TL	260	_C
from the Case for 5 seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

MJW16206

POWER TRANSISTORS

12 AMPERES

1200 VOLTS Ð VCES

50 and 150 WATTS

CASE 340F±02

TO±247AE

SCANSWITCH is a trademark of Motorola Inc.

REV 2

Motorola, Inc. 1995

MJW16206

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (1)

Collector Cutoff Current	ICES				mAdc
(VCE = 1200 Vdc, VBE = 0 V)		Ð	Ð	250
(VCE = 850 Vdc, VBE = 0 V)		Ð	Ð	25
Emitter±Base Leakage	IEBO				mAdc
(VEB = 8.0 Vdc, IC = 0)		Ð	Ð	25
Collector±Emitter Sustaining Voltage (Figure 10)	VCEO(sus)				Vdc
(IC = 10 mAdc, IB = 0)		500	Ð	Ð
Emitter±Base Breakdown Voltage	V(BR)EBO				Vdc
(IE = 1.0 mA, IC = 0)		8.0	11	Ð
ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage	VCE(sat)				Vdc
(IC = 3.0 Adc, IB = 400 mAdc)		Ð	0.15	1.0
(IC = 6.5 Adc, IB = 1.5 Adc)		Ð	0.25	1.0
Base±Emitter Saturation Voltage	VBE(sat)				Vdc
(IC = 6.5 Adc, IB = 1.5 Adc)		Ð	0.9	1.5
DC Current Gain	hFE				Ð
(IC = 1.0 Adc, VCE = 5.0 Vdc)		Ð	24	Ð
(IC = 10 Adc, VCE = 5.0 Vdc)		5.0	8.0	13
(IC = 12 Adc, VCE = 5.0 Vdc)		3.0	6.0	Ð
DYNAMIC CHARACTERISTICS

Dynamic Desaturation Interval (Figure 15)	tds	Ð	250	Ð	ns
(IC = 6.5 Adc, IB = 1.5 Adc, LB = 0.5 mH)
Emitter±Base Avalanche Turn±off Energy (Figure 15)	EB(off)	Ð	30	Ð	mjoules
(t = 500 ns, RBE = 22 W)
Output Capacitance	Cob	Ð	180	350	pF
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Gain Bandwidth Product	fT	Ð	3.0	Ð	MHz
(VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz)
Collector±Heatsink Capacitance Ð MJF16206 Isolated Package	Cc±hs	Ð	17	Ð	pF
(Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink,
VCE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS

Inductive Load (Figure 15) (IC = 6.5 A, IB = 1.5 A)					ns
Storage	tsv	Ð	1000	2250
Fall Time	tfi	Ð	100	250

(1) Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

2	Motorola Bipolar Power Transistor Device Data

	100
	70
	50	TJ = 100°C
GAIN		TJ = 100°C
	30
	20		25°C
CURRENT	20		25°C
	10		± 55°C
	10
	7
, DC	7
, DC	5
FE	3
h		VCE = 5 V
		VCE = 5 V
	2
	1				1		3	5	7
	0.2	0.3	0.5	0.7	1	2	3	5	7	10	20

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical DC Current Gain

(VOLTS)	7
	5							TJ = 25°C
								TJ = 25°C
VOLTAGE	3							8 A
	2							8 A
	2
	IC = 2 A		4 A		6.5 A			10 A
,COLLECTOR±EMITTER	1
	0.7
	0.5
	0.3
	0.2
	0.1
CE	0.1
CE	0.07
V	0.07		0.2	0.3	0.5	0.7	1		3	5
	0.05 0.07	0.1	0.2	0.3	0.5	0.7	1	2	3	5
			IB, BASE CURRENT (AMPS)

Figure 3. Typical Collector Saturation Region

	10K
	7K
	5K
	5K
	3K										C	ib
(pF)	2K
	2K
	1K


CAPACITANCE	700
	700
	100														Cob
	500
	300
	200
	70



C,			TC =	25	°C
	50		TC =	25	°C
			f = 1	MHz

	30
	30
	20
	20
	10
	10
	0.1	0.2 0.3 0.5				1	2	3	5	7 10	20 30		50	100 200300500		1K

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Typical Capacitance

									MJW16206
(VOLTS)	5
	3		TJ = 25°C
	2		TJ = 100°C
VOLTAGE	2		TJ = 100°C
	1
	0.7
,COLLECTOR±EMITTER	0.7
	0.5
	0.3		IC/IB1 = 10
	0.2		IC/IB1 = 10
	0.2
						10		5
	0.1
	0.07
CE	0.07
CE	0.05
V	0.05	0.3	0.5	0.7	1	2	3	5	7	10	20
	0.2	0.3	0.5	0.7	1	2	3	5	7	10	20
				IC, COLLECTOR CURRENT (AMPS)

Figure 2. Typical Collector±Emitter

Saturation Voltage

	10
(VOLTS)	7
	5
	3
VOLTAGE	3						IC/IB1	= 5 to 10
	2						IC/IB1	= 5 to 10
	2

BASE±EMITTER	1
	0.7
	0.5
	0.3								TJ = 25°C
,	0.2								TJ = 100°C
BE	0.2								TJ = 100°C
V
	0.1	0.3	0.5	0.7	1	2	3	5	7	10	20
	0.2	0.3	0.5	0.7	1	2	3	5	7	10	20
				IC, COLLECTOR CURRENT (AMPS)

Figure 4. Typical Base±Emitter

Saturation Voltage

	10
(MHz)	7
	5
	3
FREQUENCY	3
	2
	1
,TRANSITION	1
	0.7
	0.5	f(test) = 1 MHz
		f(test) = 1 MHz
	0.3	TC = 25°C
	0.2	VCE = 10 V
T		VCE = 10 V
f
	0.1	0.2		0.5		1		3
	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Typical Transition Frequency

Motorola Bipolar Power Transistor Device Data

MJW16206

SAFE OPERATING AREA INFORMATION

	30													20
	20													20
	20
(AMPS)	10					MJW16206				10 μs			(AMPS)	16					IC/IB1 ≥ 5
	5													16					IC/IB1 ≥ 5
	5							dc		5 ms									TJ ≤ 100°C
CURRENT	3							dc		5 ms			CURRENT						TJ ≤ 100°C
	2										100			12
											100			12
	1										ns
	1
, COLLECTOR	0.5			WIREBOND LIMIT							II*		, COLLECTOR	8
	0.3										II*							VBE(off) = 5 V


	0.2			THERMAL LIMIT
	0.1			SECONDARY BREAKDOWN										4		0 V
	0.1			LIMIT
				LIMIT
C	0.05												C						2 V
I													I

	0.03													0
	0.02	2	3	5	10	20	30	50	100	200 300	500	1K		0	200	400	600	800	1K	1.2K
	1	2	3	5	10	20	30	50	100	200 300	500	1K		0	200	400	600	800	1K	1.2K

	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
	*REGION II Ð EXPANDED FBSOA USING	Figure 8. Maximum Reverse Bias
	MUR8100E, ULTRAFAST RECTIFIER (SEE FIGURE 12)	Figure 8. Maximum Reverse Bias
	MUR8100E, ULTRAFAST RECTIFIER (SEE FIGURE 12)	Safe Operating Area
		Safe Operating Area

Figure 7. Maximum Forward Biased

Safe Operating Area

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 7 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

Inductive loads, in most cases, require the emitter±to± base junction be reversed biased because high voltage and high current must be sustained simultaneously during turn± off. Under these conditions, the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as

	100
	100
	90
	90
(%)	80
	80			SECOND	BREAKDOWN


FACTOR	70				DERATING
	70
	60
RATING	60
RATING	40		DERATING
	50
			THERMAL
POWER	20
	30
	30
	10


	0
	25	50	75	100		125	150

TC, CASE TEMPERATURE (°C)

Figure 9. Power Derating

active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage±current condition allowable during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the RBSOA characteristics.

4	Motorola Bipolar Power Transistor Device Data

MJW16206

0.02 μF

+ V ≈ 11 V

100

H.P. 214

IC(pk)

OR EQUIV.

2N6191

+ V

P.G.

0 V

10 μF

± V

*IC

RB1

VCE(pk)

≈ ± 35 V

T.U.T.

MR856

VCE

RB2

*IB

0.02

IB1

Vclamp

2N5337

1 μF

RBSOA

500

V(BR)CEO

Lcoil (ICpk)

IB2

L = 200 μH

100

L = 10 mH

T1 [

VCC

RB2 = 0

± V

RB2 = ∞

T1 adjusted to obtain IC(pk)

= 20 Volts

RB1 selected for desired IB1

*Tektronix P±6042 or Equivalent

Note: Adjust ±V to obtain desired VBE(off) at Point A.

Figure 10. RBSOA/V(BR)CEO(sus) Test Circuit

		1
		0.5	D = 0.5
	RESISTANCE(NORMALIZED)	0.5
r(t), TRANSIENT THERMAL		0.2	0.2
		0.2
		0.1	0.1		RθJC(t) = r(t) RθJC	P(pk)
		0.1			RθJC(t) = r(t) RθJC	P(pk)
		0.05			RθJC = 0.67°C/W MAX
		0.05			D CURVES APPLY FOR POWER
			SINGLE PULSE		PULSE TRAIN SHOWN	t1
					READ TIME AT t1	t
					TJ(pk) ± TC = P(pk) RθJC(t)	2
					TJ(pk) ± TC = P(pk) RθJC(t)	DUTY CYCLE, D = t1/t2
						DUTY CYCLE, D = t1/t2
		0.01			100	1K	10K
		0.1	1	10	100	1K	10K

t, TIME (ms)

Figure 11. Thermal Response

			VCE (1000 V MAX)
			10 μF	MUR8100
+15
1 μF		100 μF		10 mH
				10 mH
		100 Ω	MTP8P10
		100 Ω
	150 Ω	RB1
		RB1	MUR1100
		MTP8P10	MUR1100
		MPF930
+10		MPF930	MUR105
+10		MPF930		T.U.T.
50 Ω		MUR105	RB2
50 Ω			MTP12N10
			MTP12N10
	500 μF	MJE210
	500 μF		1 μF
		150 Ω	1 μF
VOff

Note: Test Circuit for Ultrafast FBSOA

Note: RB2 = 0 and VOff = ± 5 Volts

Figure 12. Switching Safe Operating Area

Motorola Bipolar Power Transistor Device Data

MJW16206

DYNAMIC DESATURATION

The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, ªdynamicdesaturation.º In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turn±off transition. A sluggish transition results in serious consequences.

As the saturation voltage of the output transistor increases, the voltage across the yoke drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 13 and 14) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector Current ramp, excellent turn±off switching performance, and significantly lower overall power dissipation.

	tfi		(VOLTS)	5
90% IC(pk)			(VOLTS)


		VCE	VOLTAGE	4
	10% IC(pk)	VCE
IC	10% IC(pk)			3
IC
VCE = 20 V			EMITTER-
0			EMITTER-
0
tsv			COLLECTOR	2
0			COLLECTOR
0
				1
0% IB
				0

Figure 13. Deflection Simulator Switching

Waveforms From Circuit in Figure 15

VCE

DYNAMIC DESATURATION TIME

IS MEASURED FROM VCE = 1 V

TO VCE = 5 V

tds

TIME (ns)

Figure 14. Definition of Dynamic

Desaturation Measurement

6	Motorola Bipolar Power Transistor Device Data

EMITTER±BASE TURN±OFF ENERGY

Typical techniques for driving horizontal outputs rely on a pulse transformer to supply forward base current, and a turn±off network that includes a series base inductor to limit the rate of transition from forward to reverse drive. An alternate drive scheme has been used to characterize the SCANSWITCH series of devices (see Figure 15). This circuit produces a ramp of base drive, eliminating the heavy overdrive at the beginning of the collector current ramp and underdrive just prior to turnoff produced by typical drive strategies. This high performance drive has two additional impor-

MJW16206

tant advantages. First, the configuration of T1 allows LB to be placed outside the path of forward base current making it unnecessary to expend energy to reverse current flow as in a series base inductor. Second, there is no base resistor to limit forward base current and hence no power loss associated with setting the value of the forward base current. The process of generating the ramp stores rather than dissipates energy. Tailoring the amount of energy stored in T1 to the

amount of energy, EB(off), that is required to turn±off the output transistor results in essentially lossless operation. [Note:

B+ and the primary inductance of T1 (LP) are chosen such that 1/2 LP Ib2 = EB(off)].

+ 24 V

MC7812

R13

R14

R16

430

150

110 pF

MJ11016

+ C1

GND

(IB)

(IC)

100 μF

MJ11016

+ C3

2N5401

3.9 V

10 μF

+ C2

10 μF

100 μF

R17

2.7K

9.1K

470

MTP3055E

MDC1000A

120

0.005

0.1

R15

SCANSWITCH

10K

DAMPER

OSC

VCC

DIODE

8 %

OUT 1

250

GND

Q4 SCANSWITCH

MC1391P

HORIZ OUTPUT

TRANSISTOR

R12

470

MUR110

1 W

T1: FERROXCUBE POT CORE #1811P3C8

LB = 0.5 μH

T1: PRIMARY SEC. TURNS RATIO = 13:4

CY = 0.01 μF

T1: GAPPED FOR LP = 30 μH

LY = 13 μH

Figure 15. High Resolution Deflection Application Simulator

Motorola Bipolar Power Transistor Device Data

MJW16206

	ts and tf	+15
	ts and tf	1	F	150		100		100 μF
			μ		Ω		Ω	100 μF
								MTP8P10	MTP8P10
								MTP8P10
	V(off) adjusted					MPF930			RB1
	to give specified					MPF930
	off drive	+10 V							A
		+10 V		MPF930
				MPF930
		50 Ω						MUR105	MTP12N10
VCC	250 V	50 Ω							MTP12N10
VCC	250 V
IC	6.5 A		500	μF				MJE210
IB1	1.3 A		500	μF
IB1	1.3 A				150 Ω			1 μF
IB2	Per Fig. 17 & 18	Voff
RB1	7.7 Ω	Voff
RB1	7.7 Ω
RL	38 Ω			A				T.U.T.
RL	38 Ω							*IC	RL
								*IC	RL
								*IB
									VCC

Figure 16. Resistive Load Switching

	10							1000
	7							700
	5							500
( μs)	3					IB2 = IB1	(ns)	300
t, TIME	2						t, TIME	200
t, TIME							t, TIME
	1	IC/IB1 = 5				IB2 = 2 (IB1)
	1	TC = 25°C				IB2 = 2 (IB1)		100
	0.7							70
	0.5							50
	1	2	3	5	7	10	20
		IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 17. Typical Resistive Storage Time	Figure 18. Typical Resistive Fall Time

8	Motorola Bipolar Power Transistor Device Data

MJW16206

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED	MOUNTED
FULLY ISOLATED	FULLY ISOLATED
PACKAGE	PACKAGE	0.099º MIN
		0.099º MIN
LEADS		LEADS

HEATSINK

0.110º MIN

Figure 19. Screw or Clip Mounting Position for Isolation Test Number 1

HEATSINK

Figure 20. Screw or Clip Mounting Position for Isolation Test Number 2

* Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION**

4±40 SCREW

CLIP

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT	HEATSINK

Figure 21. Typical Mounting Techniques*

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.

** For more information about mounting power semiconductors see Application Note AN1040.

Motorola Bipolar Power Transistor Device Data

MJW16206

PACKAGE DIMENSIONS

						NOTES:
					±T±	1.	DIMENSIONING AND TOLERANCING PER ANSI
	±Q±				±T±	Y14.5M, 1982.
	±Q±				E	Y14.5M, 1982.
0.25 (0.010) M T	B	M			E	2.	CONTROLLING DIMENSION: MILLIMETER.
0.25 (0.010) M T	B	M	±B±		C			MILLIMETERS		INCHES
			±B±

						4	DIM	MIN	MAX	MIN	MAX
						4	A	20.40	20.90	0.803	0.823
				U			A	20.40	20.90	0.803	0.823
				U	L		B	15.44	15.95	0.608	0.628
					L		C	4.70	5.21	0.185	0.205
							C	4.70	5.21	0.185	0.205
	A						D	1.09	1.30	0.043	0.051
	A	R					E	1.50	1.63	0.059	0.064
		R					F	1.80	2.18	0.071	0.086
		1	2	3			G	5.45 BSC		0.215 BSC
		1	2	3			H	2.56	2.87	0.101	0.113
							J	0.48	0.68	0.019	0.027
					±Y±		K	15.57	16.08	0.613	0.633
	K	P			±Y±		L	7.26	7.50	0.286	0.295
	K	P					P	3.10	3.38	0.122	0.133
							Q	3.50	3.70	0.138	0.145
							R	3.30	3.80	0.130	0.150
		F			H		U	5.30 BSC		0.209 BSC
		F		V	H		V	3.05	3.40	0.120	0.134
				V	J
		D			J		STYLE 3:
		D					STYLE 3:
0.25 (0.010) M	Y	Q S	G				PIN 1. BASE
			G					2. COLLECTOR
								2. COLLECTOR
								3. EMITTER
								4. COLLECTOR

CASE 340F±03

TO±247AE

ISSUE E

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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