MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6547/D
2N6547
Designer's Data Sheet
Switchmode Series NPN Silicon
Power Transistors
The 2N6547 transistor is designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated switch±mode applications such as:
• Switching Regulators
•PWM Inverters and Motor Controls
•Solenoid and Relay Drivers
•Deflection Circuits
Specification Features Ð
High Temperature Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS (1)
15 AMPERE
NPN SILICON
POWER TRANSISTORS 300 and 400 VOLTS 175 WATTS
CASE 1±07 TO±204AA (TO±3)
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO(sus) |
400 |
Vdc |
Collector±Emitter Voltage |
VCEX(sus) |
450 |
Vdc |
Collector±Emitter Voltage |
VCEV |
850 |
Vdc |
Emitter Base Voltage |
VEB |
9.0 |
Vdc |
Collector Current Ð Continuous |
IC |
15 |
Adc |
Ð Peak (2) |
ICM |
30 |
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Base Current Ð Continuous |
IB |
10 |
Adc |
Ð Peak (2) |
IBM |
20 |
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Emitter Current Ð Continuous |
IE |
25 |
Adc |
Ð Peak (2) |
IEM |
35 |
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Total Power Dissipation |
PD |
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Watts |
@ TC = 25_C |
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175 |
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@ TC = 100_C |
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100 |
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Derate above 25_C |
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1.0 |
W/_C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
± 65 to +200 |
_C |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RqJC |
1.0 |
_C/W |
Maximum Lead Temperature for Soldering |
TL |
275 |
_C |
Purposes: 1/8″ from Case for 5 Seconds |
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Designer's and SWITCHMODE are trademarks of Motorola, Inc. |
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Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
REV 4
Motorola, Inc. 1995
2N6547
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
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Characteristic |
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Unit |
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OFF CHARACTERISTICS (1) |
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Collector±Emitter Sustaining Voltage |
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VCEO(sus) |
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Vdc |
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(IC = 100 mA, IB = 0) |
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2N6546 |
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300 |
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Ð |
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2N6547 |
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400 |
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Ð |
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Collector±Emitter Sustaining Voltage |
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VCEX(sus) |
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Vdc |
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(IC = 8.0 A, Vclamp = Rated VCEX, TC = 100_C) |
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2N6546 |
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350 |
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Ð |
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2N6547 |
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450 |
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Ð |
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(IC = 15 A, Vclamp = Rated VCEO = 100 V, |
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2N6546 |
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200 |
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Ð |
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TC = 100_C) |
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2N6547 |
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300 |
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Ð |
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Collector Cutoff Current |
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ICEV |
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mAdc |
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(VCEV = Rated Value, VBE(off) = 1.5 Vdc) |
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Ð |
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1.0 |
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(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) |
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Ð |
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4.0 |
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Collector Cutoff Current |
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ICER |
Ð |
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5.0 |
mAdc |
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(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C) |
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Emitter Cutoff Current |
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IEBO |
Ð |
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1.0 |
mAdc |
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(VEB = 9.0 Vdc, IC = 0) |
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SECOND BREAKDOWN |
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Second Breakdown Collector Current with base forward biased |
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IS/b |
0.2 |
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Adc |
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t = 1.0 s (non±repetitive) (VCE = 100 Vdc) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 5.0 Adc, VCE = 2.0 Vdc) |
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1 2 |
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60 |
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(IC = 10 Adc, VCE = 2.0 Vdc) |
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6.0 |
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30 |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 10 Adc, IB = 2.0 Adc) |
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Ð |
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1.5 |
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(IC = 15 Adc, IB = 3.0 Adc) |
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Ð |
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5.0 |
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(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C) |
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Ð |
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2.5 |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
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Vdc |
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(IC = 10 Adc, IB = 2.0 Adc) |
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Ð |
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1.6 |
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(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C |
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Ð |
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1.6 |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product |
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fT |
6.0 |
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28 |
MHz |
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(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
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Output Capacitance |
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Cob |
125 |
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500 |
pF |
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(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) |
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SWITCHING CHARACTERISTICS |
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Resistive Load |
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Delay Time |
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td |
Ð |
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0.05 |
μs |
Rise Time |
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(VCC = 250 V, IC = 10 A, |
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t |
Ð |
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1.0 |
μs |
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IB1 = IB2 = 2.0 A, tp = 100 μs, |
r |
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Storage Time |
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ts |
Ð |
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4.0 |
μs |
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Duty Cycle v 2.0%) |
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Fall Time |
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tf |
Ð |
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0.7 |
μs |
Inductive Load, Clamped |
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Storage Time |
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(I |
= 10 A(pk), V |
= Rated V |
, I = 2.0 A, |
ts |
Ð |
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5.0 |
μs |
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C |
clamp |
CEX |
B1 |
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Fall Time |
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VBE(off) = 5.0 Vdc, TC = 100_C) |
t |
Ð |
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1.5 |
μs |
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f |
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Typical |
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Storage Time |
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(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 2.0 A, |
ts |
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2.0 |
μs |
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Fall Time |
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VBE(off) = 5.0 Vdc, TC = 25_C) |
t |
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0.09 |
μs |
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f |
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* Indicates JEDEC Registered Data. |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2%. |
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2 |
Motorola Bipolar Power Transistor Device Data |
2N6547
TYPICAL ELECTRICAL CHARACTERISTICS
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100 |
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(VOLTS) |
2.0 |
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TJ = 25°C |
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70 |
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TJ = 150°C |
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VOLTAGE |
1.6 |
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CURRENT GAIN |
50 |
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30 |
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25°C |
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1.2 |
IC = 2.0 A |
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5.0 A |
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10 A |
15 A |
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20 |
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, DC |
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± 55°C |
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COLLECTOR±EMITTER |
0.8 |
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FE |
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10 |
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h |
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0.4 |
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VCE = 2.0 V |
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7.0 |
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VCE = 10 V |
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CE |
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5.0 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
V |
0 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
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0.07 |
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IC, COLLECTOR CURRENT (AMP) |
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IB, COLLECTOR CURRENT (AMP) |
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Figure 1. DC Current Gain |
Figure 2. Collector Saturation Region |
V, VOLTAGE (VOLTS)
1.4
TJ = 25°C
1.2
1.0
0.8VBE(sat) @ IC/IB = 5.0
0.6 VBE(on) @ VCE = 2.0 V
0.4 |
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0.2 |
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VCE(sat) @ IC/IB = 5 |
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00.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 3. ªOnº Voltages
θV, TEMPERATURE COEFFICIENTS (mV/°C)
2.5 |
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h |
FE @ VCE + |
2.0 V |
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2.0 |
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*APPLIES |
FOR |
I |
/I |
B |
v |
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1.5 |
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C |
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3 |
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1.0 |
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*θVC for VCE(sat) |
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25°C to 150°C |
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0.5 |
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0 |
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± 55°C to 25°C |
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± 0.5 |
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25°C to 150°C |
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± 1.0 |
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θVB for VBE |
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± 1.5 |
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± 55°C to 25°C |
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± 2.0 |
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± 2.5 |
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0.3 |
0.5 |
0.7 |
1.0 |
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2.0 |
3.0 |
5.0 |
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7.0 |
10 |
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0.2 |
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IC, COLLECTOR CURRENT (AMP)
t, TIME (ns)
3.0 k |
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V |
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250 V |
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2.0 k |
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tr |
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CC |
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I |
/I |
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5.0 |
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C |
B |
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°C |
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1.0 k |
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TJ |
= 25 |
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700 |
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500 |
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300 |
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200 |
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td |
@ |
V |
BE(off) = 5.0 V |
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100 |
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70 |
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50 |
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30 |
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0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
|
10 |
20 |
||||||||||||||||
IC, COLLECTOR CURRENT (AMP)
Figure 5. Turn±On Time
t, TIME (ns)
10 k
7.0 k
5.0 k
3.0 k
2.0 k
1.0 k
700
500
300
200
1000.02
VCC = 250 V
IC/IB = 5.0
IB1 = IB2
TJ = 25°C
5.0 10 20
Motorola Bipolar Power Transistor Device Data |
3 |
2N6547
MAXIMUM RATED SAFE OPERATING AREAS
|
50 |
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10 ms |
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(AMP) |
20 |
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1.0 ms |
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10 |
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5.0 ms |
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5.0 |
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100 μs |
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CURRENT |
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2.0 |
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dc |
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1.0 |
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0.5 |
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COLLECTOR |
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TC = 25°C |
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0.2 |
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0.1 |
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BONDING WIRE LIMITED |
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0.05 |
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THERMAL LIMIT (SINGLE PULSE) |
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, |
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SECOND BREAKDOWN LIMIT |
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C |
0.02 |
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I |
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2N6546 |
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CURVES APPLY BELOW RATED VCEO |
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0.01 |
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2N6547 |
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0.005 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
400 |
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5.0 |
||||||||||
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
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100 |
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(%) |
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SECOND BREAKDOWN |
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80 |
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DERATING |
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FACTOR |
60 |
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DERATING |
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THERMAL DERATING |
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40 |
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POWER |
20 |
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0 |
40 |
80 |
120 |
160 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 9. Power Derating
|
20 |
TURN OFF LOAD LINE |
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(AMP) |
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BOUNDARY FOR 2N6547. |
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FOR 2N6546, VCEO AND |
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16 |
VCEX ARE 100 VOLTS LESS. |
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CURRENT |
12 |
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VCEX(sus) |
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, COLLECTOR |
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8.0 |
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8.0 V |
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4.0 |
V |
v 5 V |
VCEO(sus) |
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C |
VCEX(sus) |
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I |
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BE(off) |
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TC v 100°C |
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0
0 |
100 |
200 |
300 |
400 |
500 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
|
|||
Figure 8. Reverse Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9.
TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
TRANSIENT THERMAL RESISTANCE |
(NORMALIZED) |
r(t), |
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1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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0.3 |
0.2 |
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0.2 |
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0.1 |
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0.1 |
0.05 |
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ZθJC (t) = r(t) RθJC |
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P(pk) |
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0.07 |
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RθJC = 1.0°C/W MAX |
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0.05 |
0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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0.03 |
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t1 |
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READ TIME AT t1 |
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0.02 |
0.01 |
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t2 |
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SINGLE PULSE |
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TJ(pk) ± TC = P(pk) ZθJC(t) |
|
DUTY CYCLE, D = t1/t2 |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
0.01 |
|||||||||||||||
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t, TIME (ms) |
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Figure 10. Thermal Response
4 |
Motorola Bipolar Power Transistor Device Data |
2N6547
PACKAGE DIMENSIONS
|
A |
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N |
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NOTES: |
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C |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
||||
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Y14.5M, 1982. |
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±T± |
SEATING |
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2. CONTROLLING DIMENSION: INCH. |
|
|||||
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E |
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PLANE |
|
|
3. ALL RULES AND NOTES ASSOCIATED WITH |
|||||
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REFERENCED TO±204AA OUTLINE SHALL APPLY. |
|||||
|
D 2 PL |
K |
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INCHES |
MILLIMETERS |
||||
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|||||
|
0.13 (0.005) M |
T |
Q |
M |
Y |
M |
|
|||||
|
DIM |
MIN |
MAX |
MIN |
MAX |
|||||||
|
U |
|
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|
|
A |
1.550 REF |
39.37 REF |
||
|
±Y± |
|
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|
B |
±±± |
1.050 |
±±± |
26.67 |
||
V |
L |
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|||||||
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|
C |
0.250 |
0.335 |
6.35 |
8.51 |
||
|
2 |
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D |
0.038 |
0.043 |
0.97 |
1.09 |
|
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B |
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E |
0.055 |
0.070 |
1.40 |
1.77 |
|
H |
G |
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|
G |
0.430 BSC |
10.92 BSC |
|||
1 |
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H |
0.215 BSC |
5.46 BSC |
|||
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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|||||
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L |
0.665 BSC |
16.89 BSC |
||
|
±Q± |
|
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|
N |
±±± |
0.830 |
±±± |
21.08 |
|
0.13 (0.005) M |
T |
Y |
M |
|
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|
Q |
0.151 |
0.165 |
3.84 |
4.19 |
|
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|
U |
1.187 BSC |
30.15 BSC |
||||||
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
|
|
||
CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |
2N6547
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
|
USA / EUROPE: Motorola Literature Distribution; |
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◊ |
2N6547/D |
*2N6547/D*