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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ4502/D

High-Power PNP Silicon

Transistor

. . . for use as an output device in complementary audio amplifiers to 100±Watts music power per channel.

High DC Current Gain Ð h FE = 25±100 @ IC = 7.5 A

Excellent Safe Operating Area

Complement to the NPN MJ802

MAXIMUM RATINGS

MJ4502

30 AMPERE

POWER TRANSISTOR

PNP SILICON

100 VOLTS

200 WATTS

CASE 1±07 TO±204AA (TO±3)

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCER

100

Vdc

Collector±Base Voltage

VCB

100

Vdc

Collector±Emitter Voltage

VCEO

90

Vdc

Emitter±Base Voltage

VEB

4.0

Vdc

Collector Current

IC

30

Adc

Base Current

IB

7.5

Adc

Total Device Dissipation @ TC = 25_C

PD

200

Watts

Derate above 25_C

 

1.14

W/_C

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

± 65 to +200

_C

MAXIMUM RATINGS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

θJC

0.875

_C/W

PD, POWER DISSIPATION (WATTS)

200

150

100

50

0

0

20

40

60

80

100

120

140

160

180

200

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

 

Figure 1. Power±Temperature Derating Curve

REV 7

Motorola, Inc. 1995

MJ4502

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage(1) (I

C

= 200 mAdc, R = 100 Ohms)

V

(BR)CER

100

Ð

Vdc

 

 

BE

 

 

 

 

Collector±Emitter Sustaining Voltage(1) (IC = 200 mAdc)

VCEO(sus)

90

Ð

Vdc

Collector±Base Cutoff Current

 

 

 

 

ICBO

 

 

mAdc

(VCB = 100 Vdc, IE = 0)

 

 

 

 

 

Ð

1.0

 

(VCB = 100 Vdc, IE = 0, TC = 150_C)

 

 

 

 

 

Ð

5.0

 

Emitter±Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)

 

IEBO

Ð

1.0

mAdc

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (IC = 7.5 Adc, VCE = 2.0 Vdc)

 

hFE

25

100

Ð

Base±Emitter ªOnº Voltage (I = 7.5 Adc, V

 

= 2.0 Vdc)

V

Ð

1.3

Vdc

C

CE

 

 

BE(on)

 

 

 

Collector±Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

VCE(sat)

Ð

0.8

Vdc

Base±Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)

VBE(sat)

Ð

1.3

Vdc

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current Gain Ð Bandwidth Product (I C = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

 

fT

2.0

Ð

MHz

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

 

 

 

 

 

hFE, NORMALIZED CURRENT GAIN

3.0

 

 

 

 

2.0

VCE = 2.0 V

TJ = 175°C

 

1.0

25°C

 

0.7

 

 

± 55°C

0.5

 

 

0.3

 

 

 

0.2

DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF ICBO.

0.1

0.1

0.2 0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

0.03 0.05

IC, COLLECTOR CURRENT (AMP)

Figure 2. DC Current Gain

ªONº VOLTAGE (VOLTS)

2.0

 

1.8

TJ = 25°C

1.6

 

1.4

VBE(sat) @ IC/IB = 10

1.2

 

1.0

 

0.8

VBE @ VCE = 2.0 V

0.6

 

0.4VCE(sat) @ IC/IB = 10

0.2

 

 

 

 

 

 

 

 

 

0

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

0.03 0.05

IC, COLLECTOR CURRENT (AMP)

Figure 3. ªOnº Voltages

 

100

 

 

 

 

 

 

1.0 ms

 

 

50

 

 

 

 

 

 

 

(AMP)

 

 

 

 

 

 

 

 

 

20

 

 

 

dc

 

 

 

100 μs

 

 

 

 

 

 

 

 

 

CURRENT

10

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0 ms

 

COLLECTOR

 

TJ = 200°C

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

1.0

 

SECONDARY BREAKDOWN LIMITED

 

 

0.5

 

BONDING WIRE LIMITED

 

= 25°C

 

 

,

 

 

THERMAL LIMITATIONS @ T

C

 

 

C

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

0.2

 

PULSE DUTY CYCLE v 10%

 

 

 

 

 

0.1

2.0

3.0

5.0

10

20

30

50

100

 

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 4. Active Region Safe Operating Area

The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power±temperature derating must be observed for both steady state and pulse power conditions.

2

Motorola Bipolar Power Transistor Device Data

MJ4502

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

3

MJ4502

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJ4502/D

*MJ4502/D*

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