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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BDX53B/D

Plastic Medium-Power

Complementary Silicon

Transistors

. . . designed for general±purpose amplifier and low±speed switching applications.

• High DC Current Gain Ð

hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector Emitter Sustaining Voltage Ð @ 100 mAdc

VCEO(sus) = 80 Vdc (Min) Ð BDX53B, 54B

VCEO(sus) = 100 Vdc (Min) Ð BDX53C, 54C

• Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc

VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc

•Monolithic Construction with Built±In Base±Emitter Shunt Resistors

•TO±220AB Compact Package

MAXIMUM RATINGS

		BDX53B		BDX53C
Rating	Symbol	BDX54B		BDX54C	Unit

Collector±Emitter Voltage	VCEO	80		100	Vdc
Collector±Base Voltage	VCB	80		100	Vdc
Emitter±Base Voltage	VEB		5.0		Vdc
Collector Current Ð Continuous	IC		8.0		Adc
Peak			12

Base Current	IB		0.2		Adc
Total Device Dissipation @ TC = 25_C	PD		60		Watts
Derate above 25_C		0.48			W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Ambient	RθJA	70	_C/W
Thermal Resistance, Junction to Case	RθJC	70	_C/W

NPN

BDX53B

BDX53C

PNP

BDX54B

BDX54C

DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 ± 100 VOLTS

65 WATTS

CASE 221A±06

TO±220AB

	TA	TC
	4.0	80
(WATTS)	3.0	60
(WATTS)
DISSIPATION						TC
	2.0	40

POWER					TA
POWER	1.0	20
,
D
P
		0	20	40	60	80	100	120	140	160
		0	20	40	60	80	100	120	140	160

T, TEMPERATURE (°C)

Figure 1. Power Derating

REV 7

Motorola, Inc. 1995

BDX53B BDX53C BDX54B		BDX54C
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)		VCEO(sus)		Ð	Vdc
	(IC = 100 mAdc, IB = 0)	BDX53B, BDX54B		80	Ð
		BDX53C, BDX54C		100	Ð

	Collector Cutoff Current		ICEO			mAdc
	(VCE = 40 Vdc, IB = 0)	BDX53B, BDX54B		Ð	0.5
	(VCE = 50 Vdc, IB = 0)	BDX53C, BDX54C		Ð	0.5
	Collector Cutoff Current		ICBO			mAdc
	(VCB = 80 Vdc, IE = 0)	BDX53B, BDX54B		Ð	0.2
	(VCB = 100 Vdc, IE = 0)	BDX53C, BDX54C		Ð	0.2
	ON CHARACTERISTICS (1)

	DC Current Gain		hFE	750	Ð	Ð
	(IC = 3.0 Adc, VCE = 3.0 Vdc)
	Collector±Emitter Saturation Voltage		VCE(sat)			Vdc
	(IC = 3.0 Adc, IB = 12 mAdc)			Ð	2.0
				Ð	4.0

	Base±Emitter Saturation Voltage		VBE(sat)	Ð	2.5	Vdc
	(IC = 3.0 Adc, IC = 12 mA)
	DYNAMIC CHARACTERISTICS

	Small±Signal Current Gain		hfe	4.0	Ð	Ð
	(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
	Output Capacitance		Cob			pF
	(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)	BDX53B, 53C		Ð	300
		BDX54B, 54C		Ð	200

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2%.

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS	VCC
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS	± 30 V
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA		RC SCOPE
MSD6100 USED BELOW IB [ 100 mA		RC SCOPE
TUT
TUT

V2			RB
APPROX
+ 8.0	V	51	D1	[ 8.0 k	[ 120
0		51	D1	[ 8.0 k	[ 120
0

V1			+ 4.0 V
V1			+ 4.0 V
APPROX		25 μs	for td and tr, D1 is disconnected


±12 V
t , t	v 10 ns		and V2 = 0
r f

DUTY CYCLE = 1.0%	For NPN test circuit reverse all polarities

	5.0
	3.0	ts
	3.0
	2.0
( μs)	1.0					tf
( μs)	0.7
t, TIME	0.5
t, TIME	0.3						tr
	0.3
	0.2
	0.2	VCC = 30 V
		VCC = 30 V
	0.1	IC/IB = 250
	0.1	IB1 = IB2
	0.07	°			td @ VBE(off) = 0 V
	0.05	TJ = 25 C			td @ VBE(off) = 0 V
	0.05	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
			IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Switching Times

2	Motorola Bipolar Power Transistor Device Data

													BDX53B			BDX53C			BDX54B			BDX54C
	THERMAL RESISTANCE (NORMALIZED)	1.0
		0.7	D = 0.5
		0.5	D = 0.5
r(t) EFFECTIVE TRANSIENT		0.5
		0.3	0.2
		0.2	0.2
		0.2	0.1
			0.1									P(pk)
		0.1	0.05									P(pk)					RθJC(t) = r(t) RθJC
		0.07	0.02														RθJC = 1.92°C/W
		0.05											t1		SINGLE		D CURVES APPLY FOR POWER
		0.03											t1		SINGLE		PULSE TRAIN SHOWN
		0.03	0.01	SINGLE PULSE									t2		PULSE		READ TIME AT t1
		0.02	0.01										DUTY CYCLE, D = t /t				TJ(pk) ± TC = P(pk) RθJC(t)
															1 2
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30		50	100	200	300	500	1000
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30		50	100	200	300	500	1000
									t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

	20									100 μs
										100 μs
	10								500 μs
(AMP)	5.0				5.0 ms
(AMP)					5.0 ms
CURRENT	2.0		TJ = 150°C		1.0 ms		dc
	2.0						dc

	1.0		BONDING WIRE LIMITED
	0.5		THERMALLY LIMITED @ TC = 25°C
, COLLECTOR			THERMALLY LIMITED @ TC = 25°C
			(SINGLE PULSE)
			(SINGLE PULSE)
	0.2		SECOND BREAKDOWN LIMITED
	0.2	CURVES APPLY BELOW RATED VCEO
	0.1	CURVES APPLY BELOW RATED VCEO
	0.1

C	0.05						BDX53B, BDX54B
I	0.05

	0.02						BDX53C, BDX54C
	0.02	2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active±Region Safe Operating Area

10,000
GAIN	5000
GAIN	3000
CURRENT	3000
	2000
	1000
	500
,SMALL±SIGNAL	500
	300			TJ = 25°C
	200			VCE = 3.0 V
				VCE = 3.0 V
	100			IC = 3.0 A
	50
FE	30		PNP
h	20		PNP
	20		NPN
			NPN
	10	2.0	5.0	10	20	50	100	200	500	1000
	1.0	2.0	5.0	10	20	50	100	200	500	1000

f, FREQUENCY (kHz)

Figure 6. Small-Signal Current Gain

There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) t 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

	300
								TJ = + 25°C
	200
(pF)
CAPACITANCE	100						Cob
CAPACITANCE	70				Cib
C,
	50		PNP
			PNP
			NPN
	30	0.2	0.5	1.0	2.0	5.0	10	20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

BDX53B BDX53C BDX54B BDX54C

20,000

10,000

GAIN	5000
CURRENTDC,	1000
	3000
	2000
FE
h	500
	500
	300
	200
	0.1

						NPN																		PNP
				BDX53B, 53C																		BDX54B, 54C
																20,000
										VCE	=	4.0	V			20,000											VCE	=	4.0	V
TJ =	150°C									VCE	=	4.0	V		GAIN	10,000											VCE	=	4.0	V
																10,000
																5000



																	TJ	= 150°C
	25°C														CURRENT	3000	TJ	= 150°C
	25°C														CURRENT			25°C

															, DC	2000
																2000
																1000


	± 55°		C												FE

																		± 55°C
															h			± 55°C
																500
																500
																300


																200
0.2		0.3		0.5	0.7		1.0	2.0	3.0		5.0		7.0	10		200	0.2		0.3		0.5		0.7	1.0	2.0	3.0		5.0		7.0	10
0.2		0.3		0.5	0.7		1.0	2.0	3.0		5.0		7.0	10		0.1	0.2		0.3		0.5		0.7	1.0	2.0	3.0		5.0		7.0	10
			IC, COLLECTOR CURRENT (AMP)																	IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

3.0																				(VOLTS)	3.0
3.0																T	J = 25°C			VOLTAGE	3.0																					TJ = 25		°C
2.6																T					2.6


		IC =	2.0		A			4.0 A				6.0 A														I	C	=		2.0		A		4.0		A			6.0 A
																										I
2.2																				COLLECTOR±EMITTER,	2.2


1.8																					1.8


1.4																				CE	1.4




1.0																				V	1.0
	0.5		0.7				1.0			2.0	3.0	5.0	7.0		10			20	30	V				0.5		0.7			1.0					2.0			3.0	5.0		7.0	10		20		30

0.3																					0.3
								IB, BASE CURRENT (mA)																									IB, BASE CURRENT (mA)
														Figure 9. Collector Saturation Region
3.0																					3.0
3.0			TJ =			25°C															3.0		TJ		= 25°C
2.5			TJ =			25°C														(VOLTS)	2.5		TJ		= 25°C


2.0																					2.0

																				VOLTAGE


1.5	V	BE(sat) @				IC/IB =			250												1.5			V	BE @ VCE						= 4.0 V
1.5																				V,	1.5				BE @ VCE						= 4.0 V

1.0	VBE @ VCE					= 4.0 V															1.0		VBE(sat) @ I								C/IB = 250
1.0	VCE(sat) @ I					C/IB =			250												1.0
	VCE(sat) @ I					C/IB =			250
0.5																					0.5					VCE(sat) @ IC/IB									=	250
0.5	0.2			0.3				0.5		0.7	1.0	2.0		3.0		5.0		7.0	10		0.5	0.1				0.2			0.3				0.5	0.7			1.0			2.0	3.0	5.0	7.0		10
0.1	0.2			0.3				0.5		0.7	1.0	2.0		3.0		5.0		7.0	10			0.1				0.2			0.3				0.5	0.7			1.0			2.0	3.0	5.0	7.0		10
							IC, COLLECTOR CURRENT (AMP)																								IC, COLLECTOR CURRENT (AMP)

Figure 10. ªOnº Voltages

4	Motorola Bipolar Power Transistor Device Data

BDX53B BDX53C BDX54B BDX54C

θV, TEMPERATURE COEFFICIENT (mV/ °C)

NPN

BDX53B, BDX53C

+ 5.0

+ 4.0

*IC/IB

v h

FE/3

+ 3.0

25°C

to 150°C

+ 2.0

+ 1.0

± 55°C to

25°C

*θVC for V

± 1.0

CE(sat)

± 2.0

25°

150°C

± 3.0

θVB for VBE

± 55 to 150

°C

± 4.0

± 5.0

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

0.1

IC, COLLECTOR CURRENT (AMP)

θV, TEMPERATURE COEFFICIENT (mV/ °C)

PNP

BDX54B, BDX54C

+ 5.0

+ 4.0

*IC/IB

v h

FE/3

+ 3.0

25°C

to 150°C

+ 2.0

+ 1.0

± 55°C to

25°C

*θVC for V

± 1.0

CE(sat)

± 2.0

25°

150°C

± 3.0

θVB for VBE

± 55 to 150

°C

± 4.0

± 5.0

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

0.1

IC, COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

105

104

REVERSE

FORWARD

104

REVERSE

FORWARD

μA)

(

VCE = 30 V

(

VCE = 30 V

CURRENT

103

CURRENT

103

102

COLLECTOR

101

TJ = 150°C

101

TJ = 150°C

100°C

100

25°C

10± 1

25°C

10± 1

± 0.2

+ 0.2 + 0.4

+ 0.6

+ 0.8

+ 1.0

+ 1.2

+ 1.4

+ 0.4

+ 0.2

± 0.2 ± 0.4

± 0.6

± 0.8

± 1.0

± 1.2

± 1.4

± 0.6 ± 0.4

+ 0.6

VBE, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut±Off Region

NPN	COLLECTOR
BDX53B
BDX53C

BASE
[ 8.0 k	[ 120

PNP	COLLECTOR
BDX54B
BDX54C

BASE
[ 8.0 k	[ 120

EMITTER

Figure 13. Darlington Schematic

Motorola Bipolar Power Transistor Device Data

BDX53B BDX53C BDX54B BDX54C

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
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