MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD44H11/D
Complementary Power
Transistors
DPAK For Surface Mount Applications
. . . for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
•Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
•Straight Lead Version in Plastic Sleeves (ª±1º Suffix)
•Lead Formed Version in 16 mm Tape and Reel for Surface Mount (ªT4º Suffix)
•Electrically Similar to Popular D44H/D45H Series
•Low Collector Emitter Saturation Voltage Ð V CE(sat) = 1.0 Volt Max @ 8.0 Amperes
•Fast Switching Speeds
•Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
Rating |
Symbol |
D44H11 or D45H11 |
Unit |
|
|
|
|
Collector±Emitter Voltage |
VCEO |
80 |
Vdc |
Emitter±Base Voltage |
VEB |
5 |
Vdc |
Collector Current Ð Continuous |
IC |
8 |
Adc |
Peak |
|
16 |
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Total Power Dissipation |
PD |
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@ TC = 25_C |
|
20 |
Watts |
Derate above 25_C |
|
0.16 |
W/_C |
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Total Power Dissipation (1) |
PD |
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@ TA = 25_C |
|
1.75 |
Watts |
Derate above 25_C |
|
0.014 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to 150 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
6.25 |
_C/W |
Thermal Resistance, Junction to Ambient (1) |
RθJA |
71.4 |
_C/W |
Lead Temperature for Soldering |
TL |
260 |
_C |
(1) These ratings are applicable when surface mounted on the minimum pad size recommended.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
NPN
MJD44H11*
PNP
MJD45H11*
*Motorola Preferred Device
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
CASE 369A±13
CASE 369±07
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
0.190 |
4.826 |
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0.165 |
4.191 |
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0.07 |
1.8 |
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0.118 |
3.0 |
0.243 |
0.063 |
1.6 |
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6.172 |
|
inches |
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mm |
Motorola, Inc. 1995
MJD44H11 MJD45H11
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage |
|
VCEO(sus) |
80 |
Ð |
Ð |
Vdc |
(IC = 30 mA, IB = 0) |
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Collector Cutoff Current |
|
ICES |
Ð |
Ð |
10 |
μA |
(VCE = Rated VCEO, VBE = 0) |
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Emitter Cutoff Current |
|
IEBO |
Ð |
Ð |
50 |
μA |
(VEB = 5 Vdc) |
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ON CHARACTERISTICS |
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Collector±Emitter Saturation Voltage |
|
VCE(sat) |
Ð |
Ð |
1 |
Vdc |
(IC = 8 Adc, IB = 0.4 Adc) |
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Base±Emitter Saturation Voltage |
|
VBE(sat) |
Ð |
Ð |
1.5 |
Vdc |
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(IC = 8 Adc, IB = 0.8 Adc) |
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DC Current Gain |
|
hFE |
60 |
Ð |
Ð |
Ð |
(VCE = 1 Vdc, IC = 2 Adc) |
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DC Current Gain |
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|
40 |
Ð |
Ð |
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(VCE = 1 Vdc, IC = 4 Adc) |
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DYNAMIC CHARACTERISTICS |
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Collector Capacitance |
|
Ccb |
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pF |
(VCB = 10 Vdc, ftest = 1 MHz) |
MJD44H11 |
|
Ð |
130 |
Ð |
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MJD45H11 |
|
Ð |
230 |
Ð |
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Gain Bandwidth Product |
|
fT |
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MHz |
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) |
MJD44H11 |
|
Ð |
50 |
Ð |
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MJD45H11 |
|
Ð |
40 |
Ð |
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SWITCHING TIMES |
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Delay and Rise Times |
|
td + tr |
|
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|
ns |
(IC = 5 Adc, IB1 = 0.5 Adc) |
MJD44H11 |
|
Ð |
300 |
Ð |
|
|
MJD45H11 |
|
Ð |
135 |
Ð |
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Storage Time |
|
ts |
|
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|
ns |
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) |
MJD44H11 |
|
Ð |
500 |
Ð |
|
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MJD45H11 |
|
Ð |
500 |
Ð |
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Fall Time |
|
tf |
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|
ns |
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) |
MJD44H11 |
|
Ð |
140 |
Ð |
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MJD45H11 |
|
Ð |
100 |
Ð |
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2 |
Motorola Bipolar Power Transistor Device Data |
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MJD44H11 |
MJD45H11 |
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1 |
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EFFECTIVE TRANSIENT THERMAL |
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0.7 |
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D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
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0.3 |
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0.2 |
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0.2 |
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RθJC(t) = r(t) RθJC |
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P(pk) |
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0.1 |
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0.1 |
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0.05 |
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RθJC = 6.25°C/W MAX |
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D CURVES APPLY FOR POWER |
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0.07 |
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0.02 |
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PULSE TRAIN SHOWN |
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t1 |
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0.05 |
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READ TIME AT t1 |
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t |
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0.01 |
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TJ(pk) ± TC = P(pk) θJC(t) |
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2 |
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0.03 |
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DUTY CYCLE, D = t1/t2 |
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0.02 |
SINGLE PULSE |
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r(t), |
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0.01 |
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0.01 |
0.02 |
0.03 |
0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1 |
2 |
3 |
5 |
10 |
20 |
30 |
50 |
100 |
200 |
300 |
500 |
1 k |
|
t, TIME (ms)
Figure 1. Thermal Response
|
20 |
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(AMP) |
10 |
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500 μs |
100 μs |
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5 |
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3 |
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1 ms |
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CURRENT |
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dc |
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5 ms |
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2 |
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1 |
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, COLLECTOR |
0.5 |
THERMAL LIMIT @ TC = 25°C |
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0.3 |
WIRE BOND LIMIT |
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0.1 |
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C |
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I |
0.05 |
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0.02 |
3 |
5 |
7 |
10 |
20 |
30 |
50 |
70 |
100 |
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1 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 2. Maximum Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the limitations imposed by second breakdown.
PD, POWER DISSIPATION (WATTS)
TA TC 2.5 25
2 20
1.5 15
1 10
0.55
0 0
25
TC
TA
SURFACE
MOUNT
50 |
75 |
100 |
125 |
150 |
T, TEMPERATURE (°C)
Figure 3. Power Derating
Motorola Bipolar Power Transistor Device Data |
3 |
MJD44H11 |
MJD45H11 |
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1000 |
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1000 |
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GAIN |
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GAIN |
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1 V |
CURRENTDC |
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CURRENTDC |
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VCE = 4 V |
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VCE = 4 V |
|
100 |
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100 |
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, |
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VCE = 1 V |
, |
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FE |
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FE |
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h |
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TJ = 25°C |
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h |
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TJ = 25°C |
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10 |
1 |
10 |
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10 |
1 |
10 |
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0.1 |
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0.1 |
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IC, COLLECTOR CURRENT (AMPS) |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 4. MJD44H11 DC Current Gain |
Figure 5. MJD45H11 DC Current Gain |
|
1000 |
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1000 |
GAIN |
TJ = 125°C |
|
GAIN |
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CURRENT |
25°C |
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CURRENT |
|
100 |
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100 |
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± 40°C |
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, DC |
|
, DC |
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FE |
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FE |
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h |
VCE |
= 1 V |
h |
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10 |
1 |
10 |
10 |
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0.1 |
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TJ = 125°C |
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25°C |
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± 40°C |
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VCE = 1 V |
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0.1 |
1 |
10 |
IC, COLLECTOR CURRENT (AMPS) |
IC, COLLECTOR CURRENT (AMPS) |
Figure 6. MJD44H11 Current Gain |
Figure 7. MJD45H11 Current Gain |
versus Temperature |
versus Temperature |
|
1.2 |
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(VOLTS) |
1 |
VBE(sat) |
|
0.8 |
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VOLTAGE |
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0.6 |
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SATURATION |
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IC/IB = 10 |
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0.4 |
TJ = 25°C |
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0.2 |
VCE(sat) |
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0 |
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0.1 |
1 |
10 |
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IC, COLLECTOR CURRENT (AMPS) |
|
Figure 8. MJD44H11 On±Voltages
|
1.2 |
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(VOLTS) |
1 |
VBE(sat) |
|
0.8 |
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VOLTAGE |
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0.6 |
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SATURATION |
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IC/IB = 10 |
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0.4 |
TJ = 25°C |
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VCE(sat) |
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0.2 |
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0 |
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0.1 |
1 |
10 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 9. MJD45H11 On±Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
MJD44H11 MJD45H11
PACKAGE DIMENSIONS
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±T± |
SEATING |
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PLANE |
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B |
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C |
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V |
R |
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E |
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4 |
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Z |
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A |
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S |
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1 |
2 |
3 |
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U |
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K |
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F |
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J |
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L |
H |
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D 2 PL
G |
0.13 (0.005) M T |
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.235 |
0.250 |
5.97 |
6.35 |
B |
0.250 |
0.265 |
6.35 |
6.73 |
C |
0.086 |
0.094 |
2.19 |
2.38 |
D |
0.027 |
0.035 |
0.69 |
0.88 |
E |
0.033 |
0.040 |
0.84 |
1.01 |
F |
0.037 |
0.047 |
0.94 |
1.19 |
G |
0.180 BSC |
4.58 BSC |
||
H |
0.034 |
0.040 |
0.87 |
1.01 |
J |
0.018 |
0.023 |
0.46 |
0.58 |
K |
0.102 |
0.114 |
2.60 |
2.89 |
L |
0.090 BSC |
2.29 BSC |
||
R |
0.175 |
0.215 |
4.45 |
5.46 |
S |
0.020 |
0.050 |
0.51 |
1.27 |
U |
0.020 |
±±± |
0.51 |
±±± |
V |
0.030 |
0.050 |
0.77 |
1.27 |
Z |
0.138 |
±±± |
3.51 |
±±± |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
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CASE 369A±13 |
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ISSUE W |
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B |
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C |
NOTES: |
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V |
R |
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E |
1. DIMENSIONING AND TOLERANCING PER ANSI |
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2. |
Y14.5M, 1982. |
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CONTROLLING DIMENSION: INCH. |
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4 |
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INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
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A |
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0.235 |
0.250 |
5.97 |
6.35 |
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B |
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0.250 |
0.265 |
6.35 |
6.73 |
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1 |
2 |
3 |
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C |
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0.086 |
0.094 |
2.19 |
2.38 |
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S |
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D |
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0.027 |
0.035 |
0.69 |
0.88 |
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E |
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0.033 |
0.040 |
0.84 |
1.01 |
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±T± |
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F |
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0.037 |
0.047 |
0.94 |
1.19 |
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G |
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0.090 BSC |
2.29 BSC |
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SEATING |
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K |
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H |
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0.034 |
0.040 |
0.87 |
1.01 |
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PLANE |
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J |
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0.018 |
0.023 |
0.46 |
0.58 |
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K |
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0.350 |
0.380 |
8.89 |
9.65 |
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J |
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R |
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0.175 |
0.215 |
4.45 |
5.46 |
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F |
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S |
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0.050 |
0.090 |
1.27 |
2.28 |
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H |
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V |
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0.030 |
0.050 |
0.77 |
1.27 |
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D 3 PL |
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STYLE 1: |
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G |
0.13 (0.005) M |
T |
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PIN 1. |
BASE |
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2. |
COLLECTOR |
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EMITTER |
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COLLECTOR |
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CASE 369±07
ISSUE K
Motorola Bipolar Power Transistor Device Data |
5 |
MJD44H11 MJD45H11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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