MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE200/D
Complementary Silicon Power
Plastic Transistors
. . . designed for low voltage, low±power, high±gain audio amplifier applications.
• Collector±Emitter Sustaining Voltage Ð VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
•High DC Current Gain Ð h FE = 70 (Min) @ IC = 500 mAdc High DC Current Gain Ð h FE = 45 (Min) @ IC = 2.0 Adc High DC Current Gain Ð h FE = 10 (Min) @ IC = 5.0 Adc
•Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
•High Current±Gain Ð Bandwidth Product Ð fT = 65 MHz (Min) @ IC = 100 mAdc
•Annular Construction for Low Leakage Ð
ICBO = 100 nAdc @ Rated VCB
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector±Base Voltage |
VCB |
40 |
Vdc |
Collector±Emitter Voltage |
VCEO |
25 |
Vdc |
Emitter±Base Voltage |
VEB |
8.0 |
Vdc |
Collector Current Ð Continuous |
IC |
5.0 |
Adc |
Peak |
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10 |
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Base Current |
IB |
1.0 |
Adc |
Total Power Dissipation @ TC = 25_C |
PD |
15 |
Watts |
Derate above 25_C |
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0.12 |
W/_C |
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Total Power Dissipation @ TA = 25_C |
PD |
1.5 |
Watts |
Derate above 25_C |
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0.012 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
θJC |
8.34 |
_C/W |
Thermal Resistance, Junction to Ambient |
θJA |
83.4 |
_C/W |
NPN
MJE200*
PNP
MJE210*
*Motorola Preferred Device
5 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
25 VOLTS
15 WATTS
CASE 77±08
TO±225AA
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16 |
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1.6 |
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POWERDISSIPATION (WATTS) |
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P |
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D |
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12 |
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1.2 |
DISSIPATION POWER , |
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C |
8.0 |
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0.8 |
T |
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T |
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A |
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4.0 |
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0.4 |
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(WATTS) |
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D |
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P |
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0 |
40 |
60 |
80 |
100 |
120 |
140 |
0 |
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20 |
160 |
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T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
MJE200 |
MJE210 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
25 |
Ð |
Vdc |
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(IC = 10 mAdc, IB = 0) |
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Collector Cutoff Current |
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ICBO |
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(VCB = 40 Vdc, IE = 0) |
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Ð |
100 |
nAdc |
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(VCB = 40 Vdc, IE = 0, TJ = 125_C) |
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Ð |
100 |
μAdc |
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Emitter Cutoff Current |
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IEBO |
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nAdc |
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(VBE = 8.0 Vdc, IC = 0) |
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Ð |
100 |
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ON CHARACTERISTICS |
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DC Current Gain (1) |
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hFE |
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Ð |
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(IC = 500 mAdc, VCE = 1.0 Vdc) |
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70 |
Ð |
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(IC = 2.0 Adc, VCE = 1.0 Vdc) |
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45 |
180 |
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(IC = 5.0 Adc, VCE = 2.0 Vdc) |
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10 |
Ð |
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Collector±Emitter Saturation Voltage (1) |
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VCE(sat) |
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Vdc |
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(IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
0.3 |
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(IC = 2.0 Adc, IB = 200 mAdc) |
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Ð |
0.75 |
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(IC = 5.0 Adc, IB = 1.0 Adc) |
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Ð |
1.8 |
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Base±Emitter Saturation Voltage (1) |
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VBE(sat) |
Ð |
2.5 |
Vdc |
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(IC = 5.0 Adc, IB = 1.0 Adc) |
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Base±Emitter On Voltage (1) |
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VBE(on) |
Ð |
1.6 |
Vdc |
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(IC = 2.0 Adc, VCE = 1.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product (2) |
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fT |
65 |
Ð |
MHz |
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(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
MJE200 |
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Ð |
80 |
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MJE210 |
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Ð |
120 |
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(1)Pulse Test: Pulse Width = 300 μs, Duty Cycle [ 2.0%.
(2)fT = hfe•ftest.
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VCC |
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+ 30 V |
25 μs |
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RC |
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SCOPE |
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+11 V |
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RB |
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0 |
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± 9.0 V |
51 |
D1 |
tr, tf ≤ 10 ns |
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± 4 V |
DUTY CYCLE = 1.0% |
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RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
t, TIME (ns)
1K |
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500 |
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td |
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300 |
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200 |
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100 |
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50 |
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30 |
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tr |
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VCC = 30 V |
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20 |
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10 |
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IC/IB = 10 |
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TJ = 25°C |
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5 |
MJE200 |
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3 |
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MJE210 |
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2 |
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1 |
0.02 0.03 0.05 |
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0.01 |
0.1 |
0.2 |
0.3 |
0.5 |
1 |
2 |
3 |
5 |
10 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 3. Turn±On Time
2 |
Motorola Bipolar Power Transistor Device Data |
TRANSIENT THERMAL RESISTANCE |
(NORMALIZED) |
r(t), |
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MJE200 |
MJE210 |
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1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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0.3 |
0.2 |
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0.2 |
0.1 |
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θJC(t) = r(t) θJC |
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P(pk) |
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0.1 |
0.05 |
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θJC = 8.34°C/W MAX |
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D CURVES APPLY FOR POWER |
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0.07 |
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0.02 |
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PULSE TRAIN SHOWN |
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t1 |
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0.05 |
0.01 |
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READ TIME AT t1 |
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t |
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TJ(pk) ± TC = P(pk) θJC(t) |
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2 |
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0.03 |
0 (SINGLE PULSE) |
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DUTY CYCLE, D = t1/t2 |
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0.02 |
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0.01 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
0.02 |
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t, TIME (ms) |
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Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
10 |
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100 μs |
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7.0 |
1.0 ms |
500 μs |
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5.0 |
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3.0 |
dc |
5.0 ms |
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2.0 |
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1.0 |
TJ = 150°C |
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0.7BONDING WIRE LIMITED
0.5THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.3SECOND BREAKDOWN LIMITED
0.2CURVES APPLY BELOW
RATED VCEO
0.1
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 150 _C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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10K |
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5K |
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t |
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VCC = 30 V |
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3K |
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s |
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IC/IB = 10 |
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2K |
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IB1 = IB2 |
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1K |
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TJ = 25°C |
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(ns) |
500 |
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TIME |
300 |
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200 |
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t, |
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100 |
tf |
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50 |
MJE200 |
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30 |
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MJE210 |
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20 |
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10 |
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0.01 |
0.02 0.03 0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1 |
2 |
3 |
5 |
10 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 6. Turn±Off Time
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200 |
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TJ = 25°C |
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(pF) |
100 |
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Cib |
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C, CAPACITANCE |
70 |
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50 |
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Cob |
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30 |
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MJE200 (NPN) |
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MJE210 (PNP) |
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20 |
0.6 |
1.0 |
2.0 |
4.0 |
6.0 |
10 |
20 |
40 |
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0.4 |
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VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data |
3 |
MJE200 |
MJE210 |
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NPN |
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MJE200 |
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400 |
TJ = 150°C |
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GAIN |
200 |
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25°C |
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DC CURRENT |
100 |
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± 55°C |
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80 |
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60 |
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FE |
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h |
40 |
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VCE = 1.0 V |
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VCE = 2.0 V |
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20 |
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0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
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0.05 0.07 |
0.1 |
0.2 |
0.3 |
5.0 |
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IC, COLLECTOR CURRENT (AMP) |
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PNP |
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MJE210 |
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400 |
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GAIN |
200 |
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TJ = 150°C |
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25°C |
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CURRENT |
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100 |
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80 |
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± 55°C |
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DC |
60 |
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, |
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FE |
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h |
40 |
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VCE = 1.0 V |
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VCE = 2.0 V |
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20 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
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0.05 0.07 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 8. DC Current Gain
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2.0 |
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TJ = 25°C |
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1.6 |
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(VOLTS) |
1.2 |
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V, VOLTAGE |
0.8 |
VBE(sat) @ IC/IB = 10 |
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VBE @ VCE = 1.0 V |
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0.4 |
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VCE(sat) @ IC/IB = 10 |
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0 |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
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0.05 0.07 |
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IC, COLLECTOR CURRENT (AMP) |
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2.0 |
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TJ = 25°C |
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1.6 |
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(VOLTS) |
1.2 |
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V, VOLTAGE |
0.8 |
VBE(sat) @ IC/IB = 10 |
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VBE @ VCE = 1.0 V |
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0.4 |
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VCE(sat) @ IC/IB = 10 |
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0 |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
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0.05 0.07 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 9. ªOnº Voltage
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
+ 2.5 |
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°C) |
+ 2.5 |
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+ 2.0 |
*APPLIES FOR I /I |
≤ h |
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+ 2.0 |
*APPLIES FOR IC/IB ≤ hFE/3 |
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(mV/ |
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C B |
FE/3 |
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+ 1.5 |
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COEFFICIENTS |
+ 1.5 |
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0 |
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0 |
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+ 1.0 |
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+ 1.0 |
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25°C to 150°C |
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+ 0.5 |
θVC for VCE(sat) |
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25°C to 150°C |
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+ 0.5 |
*θVC for VCE(sat) |
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± 55°C to 25°C |
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TEMPERATURE, |
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± 55°C to 25°C |
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± 2.0 |
θVB for VBE |
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± 0.5 |
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° |
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± 0.5 |
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± 1.0 |
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25°C to 150°C |
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± 1.0 |
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25°C to 150°C |
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θVB for VBE |
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± 55°C to 25°C |
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± 1.5 |
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± 1.5 |
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± 55 C to 25 C |
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± 2.0 |
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± 2.5 |
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θ |
± 2.5 |
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0.05 0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
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0.05 |
0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
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IC, COLLECTOR CURRENT (AMP) |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 10. Temperature Coefficients
4 |
Motorola Bipolar Power Transistor Device Data |
MJE200 MJE210
PACKAGE DIMENSIONS
±B± |
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U |
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F |
C |
Q |
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M |
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±A± |
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1 |
2 |
3 |
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H |
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K |
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V |
J |
G |
R |
S |
0.25 (0.010) M A M B M |
D 2 PL |
|
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.425 |
0.435 |
10.80 |
11.04 |
B |
0.295 |
0.305 |
7.50 |
7.74 |
C |
0.095 |
0.105 |
2.42 |
2.66 |
D |
0.020 |
0.026 |
0.51 |
0.66 |
F |
0.115 |
0.130 |
2.93 |
3.30 |
G |
0.094 BSC |
2.39 BSC |
||
H |
0.050 |
0.095 |
1.27 |
2.41 |
J |
0.015 |
0.025 |
0.39 |
0.63 |
K |
0.575 |
0.655 |
14.61 |
16.63 |
M |
5 |
TYP |
5 |
TYP |
Q |
0.148 |
0.158 |
3.76 |
4.01 |
R |
0.045 |
0.055 |
1.15 |
1.39 |
S |
0.025 |
0.035 |
0.64 |
0.88 |
U |
0.145 |
0.155 |
3.69 |
3.93 |
V |
0.040 |
±±± |
1.02 |
±±± |
0.25 (0.010) M A M B M |
STYLE 1: |
|
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PIN 1. |
EMITTER |
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2. |
COLLECTOR |
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3. |
BASE |
CASE 77±08
TO±225AA
ISSUE V
Motorola Bipolar Power Transistor Device Data |
5 |
MJE200 MJE210
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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◊ MJE200/D
*MJE200/D*