MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5883/D
Complementary Silicon
High-Power Transistors
. . . designed for general±purpose power amplifier and switching applications.
• Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc |
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• Low Leakage Current |
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ICEX = 1.0 mAdc (max) at Rated Voltage |
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• Excellent DC Current Gain Ð |
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hFE = 20 (min) at IC = 10 Adc |
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• High Current Gain Bandwidth Product Ð |
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fτ = 4.0 MHz (min) at IC = 1.0 Adc |
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MAXIMUM RATINGS (1) |
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2N5883 |
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2N5884 |
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Rating |
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Symbol |
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2N5885 |
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2N5886 |
Unit |
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Collector±Emitter Voltage |
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VCEO |
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60 |
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80 |
Vdc |
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Collector±Base Voltage |
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VCB |
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60 |
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80 |
Vdc |
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Emitter±Base Voltage |
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VEB |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
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IC |
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25 |
Adc |
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Peak |
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50 |
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Base Current |
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IB |
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7.5 |
Adc |
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Total Device Dissipation @ TC = 25_C |
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PD |
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200 |
Watts |
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Derate above 25_C |
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1.15 |
W/_C |
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Operating and Storage Junction |
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TJ, Tstg |
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± 65 to +200 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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θJC |
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0.875 |
_C/W |
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(1)Indicates JEDEC registered data. Units and conditions differ on some parameters and re±registrationreflecting these changes has been requested. All above values most or exceed present JEDEC registered data.
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200 |
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(WATTS) |
175 |
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150 |
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DISSIPATION |
125 |
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100 |
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75 |
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, POWER |
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50 |
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D |
25 |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
PNP
2N5883
2N5884*
NPN
2N5885
2N5886*
*Motorola Preferred Device
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 ± 80 VOLTS
200 WATTS
CASE 1±07 TO±204AA (TO±3)
Motorola, Inc. 1995
2N5883 |
2N5884 |
2N5885 |
2N5886 |
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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Collector±Emitter Sustaining Voltage (1) |
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2N5883, 2N5885 |
VCEO(sus) |
60 |
Ð |
Vdc |
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(IC = 200 mAdc, IB = 0) |
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2N5884, 2N5886 |
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80 |
Ð |
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Collector Cutoff Current |
(VCE = 30 Vdc, IB = 0) |
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2N5883, 2N5885 |
ICEO |
Ð |
2.0 |
mAdc |
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Collector Cutoff Current |
(VCE = 40 Vdc, IB = 0) |
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2N5984, 2N5886 |
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2.0 |
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Collector Cutoff Current |
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ICEX |
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mAdc |
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(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) |
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2N5883, 2N5885 |
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1.0 |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) |
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2N5884, 2N5886 |
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1.0 |
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(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) |
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2N5883, 2N5885 |
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10 |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) |
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2N5884, 2N5886 |
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10 |
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Collector Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 60 Vdc, IE = 0) |
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2N5883, 2N5885 |
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1.0 |
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(VCB = 80 Vdc, IE = 0) |
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2N5884, 2N5886 |
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1.0 |
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Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) |
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IEBO |
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1.0 |
mAdc |
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ON CHARACTERISTICS |
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DC Current Gain (1) (IC = 3.0 Adc, VCE = 4.0 Vdc) |
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hFE |
35 |
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Ð |
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DC Current Gain (1) (IC = 10 Adc, VCE = 4.0 Vdc) |
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20 |
100 |
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DC Current Gain (1) (IC = 25 Adc, VCE = 4.0 Vdc) |
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4.0 |
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Collector±Emitter Saturation Voltage (1) |
(IC = 15 Adc, IB = 1.5 Adc) |
VCE(sat) |
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1.0 |
Vdc |
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Collector±Emitter Saturation Voltage (1) |
(IC = 25 Adc, IB = 6.25 Adc) |
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4.0 |
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Base±Emitter Saturation Voltage (1) (IC = 25 Adc, IB = 6.25 Adc) |
VBE(sat) |
Ð |
2.5 |
Vdc |
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Base±Emitter On Voltage (1) (IC = 10 Adc, VCE = 4.0 Vdc) |
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VBE(on) |
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1.5 |
Vdc |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product (2) |
(I C = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) |
fT |
4.0 |
Ð |
MHz |
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Output Capacitance |
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2N5883, 2N5884 |
Cob |
Ð |
1000 |
pF |
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(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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2N5885, 2N5886 |
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500 |
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Small±Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) |
hfe |
20 |
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Ð |
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SWITCHING CHARACTERISTICS |
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Rise Time |
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(VCC = 30 Vdc, IC = 10 Adc, |
tr |
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0.7 |
μs |
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Storage Time |
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ts |
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1.0 |
μs |
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IB1 = IB2 |
= 1.0 Adc) |
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Fall Time |
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tf |
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0.8 |
μs |
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* Indicates JEDEC Registered Data. |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
(2) fT = |hfe| •ftest. |
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TURN±ON TIME |
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VCC |
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± 30 V |
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RL |
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3.0 |
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+ 2.0 V |
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0 |
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10 |
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TO SCOPE |
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tr ≤ 20 ns |
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2.0 |
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RB |
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TJ = 25°C |
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tr ≤ |
±11 V |
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1.0 |
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IC/IB = 10 |
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20 ns |
10 to 100 μs |
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0.7 |
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VCC = 30 V |
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0.5 |
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VBE(off) = 2 V |
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DUTY CYCLE ≈ 2.0% |
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VCC |
± 30 V |
μs) |
0.3 |
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t |
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TURN±OFF TIME |
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( |
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r |
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RL |
3.0 |
t, TIME |
0.2 |
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2N5883, 2N5884 (PNP) |
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+9.0 V |
10 |
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0.1 |
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0 |
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TO SCOPE |
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td |
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2N5885, 2N5886 (NPN) |
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RB |
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tr ≤ 20 ns |
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0.07 |
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0.05 |
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±11 V |
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tr ≤ 20 ns |
VBB |
+ 7.0 V |
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0.03 |
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10 to 100 μs |
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0.02 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
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DUTY CYCLE ≈ 2.0% |
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0.3 |
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IC, COLLECTOR CURRENT (AMPERES) |
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FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN. Figure 3. Turn±On Time FOR NPN, REVERSE ALL POLARITIES.
Figure 2. Switching Time Equivalent Test Circuits
2 |
Motorola Bipolar Power Transistor Device Data |
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2N5883 |
2N5884 |
2N5885 |
2N5886 |
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1.0 |
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EFFECTIVE TRANSIENT THERMAL |
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0.5 |
D = 0.5 |
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RESISTANCE (NORMALIZED) |
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0.2 |
0.2 |
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0.1 |
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θJC(t) = r(t) θJC |
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P(pk) |
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0.1 |
0.05 |
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θJC = 0.875°C/W MAX |
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0.05 |
0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.01 |
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READ TIME AT t1 |
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t |
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TJ(pk) ± TC = P(pk) θJC(t) |
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2 |
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SINGLE PULSE |
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DUTY CYCLE, D = t1/t2 |
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r(t), |
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0.02 |
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0.01 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
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100 |
200 |
500 |
1000 |
2000 |
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0.02 |
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t, TIME (ms)
Figure 4. Thermal Response
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(AMPERES) |
50 |
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500 μs |
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20 |
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1 ms |
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5 ms |
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10 |
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dc |
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CURRENT |
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5.0 |
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TJ = 200°C |
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2.0 |
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SECOND BREAKDOWN LIMITED |
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BONDING WIRE LIMITED |
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COLLECTOR |
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1.0 |
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THERMAL LIMITATION @ TC = 25°C |
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0.5 |
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(SINGLE PULSE) |
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CURVES APPLY BELOW RATED VCEO |
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2N5883, 2N5885 |
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C |
0.2 |
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I |
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0.1 |
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2N5884, 2N5886 |
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2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
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1.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 5. Active±Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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10 |
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7.0 |
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2N5883, 2N5884 (PNP) |
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TJ = 25°C |
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5.0 |
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2N5885, 2N5886 (NPN) |
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VCC = 30 V |
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3.0 |
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IC/IB = 10 |
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ts |
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IB1 = IB2 |
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2.0 |
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μs) |
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ts |
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( |
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TIME |
1.0 |
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0.7 |
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t, |
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0.5 |
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tf |
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0.3 |
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0.2 |
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tf |
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0.1 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
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IC, COLLECTOR CURRENT (AMPERES) |
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Figure 6. Turn±Off Time
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3000 |
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TJ = 25°C |
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2000 |
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(pF) |
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Cob |
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Cib |
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CAPACITANCE |
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1000 |
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700 |
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Cib |
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C, |
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500 |
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2N5883, 2N5884 (PNP) |
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Cob |
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2N5885, 2N5886 (NPN) |
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300 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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0.1 |
|||||||||
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data |
3 |
2N5883 2N5884 2N5885 2N5886
PNP DEVICES
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2N5883 and 2N5884 |
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1000 |
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700 |
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500 |
TJ = 150°C |
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VCE = 4.0 V |
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GAIN |
300 |
25°C |
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200 |
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CURRENT |
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100 |
± 55°C |
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70 |
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, DC |
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50 |
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FE |
30 |
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h |
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20 |
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10 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
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IC, COLLECTOR CURRENT (AMPERES) |
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NPN DEVICES
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2N5885 and 2N5886 |
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1000 |
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700 |
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VCE = 4.0 V |
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500 |
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TJ = 150°C |
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GAIN |
300 |
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200 |
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CURRENT |
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100 |
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25°C |
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70 |
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, DC |
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50 |
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FE |
30 |
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± 55°C |
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h |
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20 |
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10 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
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IC, COLLECTOR CURRENT (AMPERES) |
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Figure 8. DC Current Gain
(VOLTS) |
2.0 |
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TJ = 25°C |
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VOLTAGE |
1.6 |
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IC = 2.0 A |
5.0 A |
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10 A |
20 A |
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1.2 |
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, COLLECTOR±EMITTER |
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0.8 |
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0.4 |
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CE |
0 |
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V |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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0.01 |
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IB, BASE CURRENT (AMPERES) |
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(VOLTS) |
2.0 |
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TJ = 25°C |
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VOLTAGE |
1.6 |
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1.2 |
IC = 2.0 A |
5.0 A |
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10 A |
20 A |
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, COLLECTOR±EMITTER |
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0.8 |
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0.4 |
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CE |
0 |
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V |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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0.01 |
|||||||||
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IC, COLLECTOR CURRENT (AMPERES) |
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Figure 9. Collector Saturation Region
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2.0 |
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TJ = 25°C |
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1.6 |
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(VOLTS) |
1.2 |
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V, VOLTAGE |
0.8 |
VBE(sat) @ IC/IB = 10 |
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VBE @ VCE = 4 V |
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0.4 |
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VCE(sat) @ IC/IB = 10 |
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0 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
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IC, COLLECTOR CURRENT (AMPERES) |
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2.0 |
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TJ = 25°C |
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1.6 |
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(VOLTS) |
1.2 |
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V, VOLTAGE |
0.8 |
VBE(sat) @ IC/IB = 10 |
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VBE @ VCE = 4 V |
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0.4 |
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VCE(sat) @ IC/IB = 10 |
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0 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
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0.3 |
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IC, COLLECTOR CURRENT (AMPERES) |
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Figure 10. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
2N5883 2N5884 2N5885 2N5886
PACKAGE DIMENSIONS
|
A |
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N |
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NOTES: |
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C |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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±T± |
SEATING |
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2. CONTROLLING DIMENSION: INCH. |
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E |
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PLANE |
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3. ALL RULES AND NOTES ASSOCIATED WITH |
|||||
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REFERENCED TO±204AA OUTLINE SHALL APPLY. |
|||||
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D 2 PL |
K |
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INCHES |
MILLIMETERS |
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|
0.13 (0.005) M |
T |
Q |
M |
Y |
M |
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|||||
|
DIM |
MIN |
MAX |
MIN |
MAX |
|||||||
|
U |
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|
A |
1.550 REF |
39.37 REF |
||
|
±Y± |
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B |
±±± |
1.050 |
±±± |
26.67 |
||
V |
L |
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C |
0.250 |
0.335 |
6.35 |
8.51 |
||
|
2 |
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D |
0.038 |
0.043 |
0.97 |
1.09 |
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B |
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E |
0.055 |
0.070 |
1.40 |
1.77 |
|
H |
G |
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G |
0.430 BSC |
10.92 BSC |
|||
1 |
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H |
0.215 BSC |
5.46 BSC |
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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L |
0.665 BSC |
16.89 BSC |
||
|
±Q± |
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N |
±±± |
0.830 |
±±± |
21.08 |
|
0.13 (0.005) M |
T |
Y |
M |
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Q |
0.151 |
0.165 |
3.84 |
4.19 |
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U |
1.187 BSC |
30.15 BSC |
||||||
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
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CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |
2N5883 2N5884 2N5885 2N5886
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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How to reach us: |
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2N5883/D |
*2N5883/D*