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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUL45D2/D

Designer's Data Sheet

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

The BUL45D2 is state±of±art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Main features:

•Low Base Drive Requirement

•High Peak DC Current Gain (55 Typical) @ IC = 100 mA

•Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread

•Integrated Collector±Emitter Free Wheeling Diode

•Fully Characterized and Guaranteed Dynamic VCE(sat)

•ª6 Sigmaº Process Providing Tight and Reproductible Parameter Spreads

It's characteristics make it also suitable for PFC application.

MAXIMUM RATINGS

BUL45D2

POWER TRANSISTORS

5 AMPERES

700 VOLTS

75 WATTS

CASE 221A±06

TO±220AB

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO	400	Vdc
Collector±Base Breakdown Voltage	VCBO	700	Vdc
Collector±Emitter Breakdown Voltage	VCES	700	Vdc
Emitter±Base Voltage	VEBO	12	Vdc
Collector Current Ð Continuous	IC	5	Adc
Ð Peak (1)	ICM	10
Base Current Ð Continuous	IB	2	Adc
Base Current Ð Peak (1)	IBM	4
*Total Device Dissipation @ TC = 25_C	PD	75	Watt
*Derate above 25°C		0.6	W/_C

Operating and Storage Temperature	TJ, Tstg	± 65 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance			_C/W
Ð Junction to Case	RqJC	1.65
Ð Junction to Ambient	RqJA	62.5
Maximum Lead Temperature for Soldering Purposes:	TL	260	_C
1/8″ from case for 5 seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

BUL45D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage		VCEO(sus)	400	450		Vdc
(IC = 100 mA, L = 25 mH)
Collector±Base Breakdown Voltage		VCBO	700	910		Vdc
(ICBO = 1 mA)
Emitter±Base Breakdown Voltage		VEBO	12	14.1		Vdc
(IEBO = 1 mA)
Collector Cutoff Current		ICEO			100	μAdc
(VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)	@ TC = 25°C	ICES			100	μAdc
	@ TC = 125°C				500
Collector Cutoff Current (VCE = 500 V, VEB = 0)	@ TC = 125°C				100
Emitter±Cutoff Current		IEBO			100	μAdc
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS

Base±Emitter Saturation Voltage	@ TC = 25°C	VBE(sat)				Vdc
(IC = 0.8 Adc, IB = 80 mAdc)	@ TC = 25°C			0.8	1
	@ TC = 125°C			0.7	0.9
(IC = 2 Adc, IB = 0.4 Adc)	@ TC = 25°C			0.89	1
	@ TC = 125°C			0.79	0.9
Collector±Emitter Saturation Voltage	@ TC = 25°C	VCE(sat)				Vdc
(IC = 0.8 Adc, IB = 80 mAdc)	@ TC = 25°C			0.28	0.4
	@ TC = 125°C			0.32	0.5
(IC = 2 Adc, IB = 0.4 Adc)	@ TC = 25°C			0.32	0.5
	@ TC = 125°C			0.38	0.6
(IC = 0.8 Adc, IB = 40 mAdc)	@ TC = 25°C			0.46	0.75
	@ TC = 125°C			0.62	1
DC Current Gain	@ TC = 25°C	hFE				Ð
(IC = 0.8 Adc, VCE = 1 Vdc)	@ TC = 25°C		22	34
	@ TC = 125°C		20	29
(IC = 2 Adc, VCE = 1 Vdc)	@ TC = 25°C		10	14
	@ TC = 125°C		7	9.5
DIODE CHARACTERISTICS

Forward Diode Voltage	@ TC = 25°C	VEC				V
(IEC = 1 Adc)	@ TC = 25°C			1.04	1.5
	@ TC = 125°C			0.7
(IEC = 2 Adc)	@ TC = 25°C			1.2	1.6
	@ TC = 125°C
(IEC = 0.4 Adc)	@ TC = 25°C			0.85	1.2
	@ TC = 125°C			0.62
Forward Recovery Time (see Figure 27)		Tfr		330		ns
(IF = 1 Adc, di/dt = 10 A/μs)	@ TC = 25°C
(IF = 2 Adc, di/dt = 10 A/μs)	@ TC = 25°C			360
(IF = 0.4 Adc, di/dt = 10 A/μs)	@ TC = 25°C			320

2	Motorola Bipolar Power Transistor Device Data

BUL45D2

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

MHz

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

Output Capacitance

Cob

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

Input Capacitance

Cib

340

500

(VEB = 8 Vdc)

DYNAMIC SATURATION VOLTAGE

= 1 A

@ 1 μs

@ TC = 25°C

VCE(dsat)

3.7

9.4

@ TC = 125 C

Dynamic Saturation

IB1 = 100 mA

@ 3 μs

@ TC = 25°C

0.35

Voltage:

VCC = 300 V

@ TC = 125°C

2.7

Determined 1 s and

3 μs respectively after

@ 1 μs

@ TC = 25°C

3.9

rising IB1 reaches

= 2 A

90% of final IB1

= 0.8 A

@ TC = 125 C

@ 3 μs

@ TC = 25°C

0.4

VCC = 300 V

@ TC = 125°C

1.5

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs)

Turn±on Time

= 2 Adc, I

= 0.4 Adc

@ TC = 25°C

ton

150

105

@ TC = 125 C

IB2 = 1 Adc

Turn±off Time

@ TC = 25°C

toff

1.15

1.3

μs

V = 300 Vdc

@ TC = 125°C

1.5

Turn±on Time

= 2 Adc, I

= 0.4 Adc

@ TC = 25°C

ton

150

110

@ TC = 125 C

IB2 = 0.4 Adc

Turn±off Time

@ TC = 25°C

toff

2.1

2.4

μs

VCC = 300 Vdc

@ TC = 125°C

3.1

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

@ TC = 25°C

150

IC = 1 Adc

@ TC = 125°C

Storage Time

@ TC = 25°C

0.72

0.9

μs

IB1 = 100 mAdc

@ TC = 125°C

1.05

IB2 = 500 mAdc

Crossover Time

@ TC = 25°C

150

@ TC = 125°C

Fall Time

@ TC = 25°C

150

IC = 2 Adc

@ TC = 125°C

105

Storage Time

@ TC = 25°C

1.95

2.25

μs

IB1 = 0.4 Adc

@ TC = 125°C

2.9

IB2 = 0.4 Adc

Crossover Time

@ TC = 25°C

225

300

@ TC = 125°C

450

Motorola Bipolar Power Transistor Device Data

BUL45D2

TYPICAL STATIC CHARACTERISTICS

	100
	VCE = 1 V
GAIN	80		TJ = 125°C
GAIN			TJ = 25°C
CURRENT	60		TJ = 25°C
	60
	40		TJ = ± 20°C
, DC	40		TJ = ± 20°C
, DC
FE
h	20
	20
	0
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	4
					TJ = 25°C
(VOLTS)	3
(VOLTS)
VOLTAGE,	2
	2
CE					5 A
CE
V	1		2 A	3 A
	1			3 A
				4 A
			1 A
		IC = 500 mA
	0			1
	0.001	0.01	0.1	1	10

IB, BASE CURRENT (AMPS)

Figure 3. Collector Saturation Region

	10
		IC/IB = 10
(VOLTS)
, VOLTAGE	1
, VOLTAGE
CE		TJ = ± 20°C
V			TJ = 125°C
			TJ = 125°C
				TJ = 25°C
	0.1			1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
		VCE = 5 V	TJ = 125°C
GAIN	80		TJ = 125°C
GAIN			TJ = 25°C
CURRENT	60		TJ = 25°C
	60
	40		TJ = ± 20°C
, DC	40		TJ = ± 20°C
, DC
FE
h	20
	20
	0
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volt

	10
		IC/IB = 5		TJ = 25°C
				TJ = 25°C
(VOLTS)
, VOLTAGE	1			TJ = 125°C
				TJ = 125°C

CE
V
			TJ = ± 20°C
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector±Emitter Saturation Voltage

	10
		IC/IB = 20
(VOLTS)
,VOLTAGE	1
,VOLTAGE		°	TJ = 125°C
CE		TJ = 25 C
CE		TJ = ± 20°C
V
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector±Emitter Saturation Voltage

4	Motorola Bipolar Power Transistor Device Data

BUL45D2

TYPICAL STATIC CHARACTERISTICS

	10
	IC/IB = 5
(VOLTS)		TJ	= 25°C
, VOLTAGE		TJ	= 25°C
	1		TJ = ± 20°C

BE			TJ = 125°C
V			TJ = 125°C
	0.1
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base±Emitter Saturation Region

	10
	IC/IB = 20
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE				TJ = 125°C
BE				TJ = 125°C
V		TJ = 25°C
		TJ = 25°C
	0.1				10
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 9. Base±Emitter Saturation Region

	1000
	C	ib	(pF)	TJ = 25°C
		ib		f(test) = 1 MHz
				f(test) = 1 MHz
(pF)	100
CAPACITANCE				Cob (pF)
CAPACITANCE	10
C,	10
C,
	1
	1		10	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

	10
		IC/IB = 10
(VOLTS)
, VOLTAGE	1		TJ = ± 20°C
, VOLTAGE			TJ = 125°C
BE			TJ = 125°C
V			TJ = 25°C
			TJ = 25°C
	0.1
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Base±Emitter Saturation Region

	10
VOLTAGE (VOLTS)	1		25°C
FORWARD DIODE			25°C

			125°C

	0.1		1
	0.01	0.1	1	10
		REVERSE EMITTER±COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage

	1000
	900	BVCER @ 10 mA	TJ = 25°C
	900	BVCER @ 10 mA
(VOLTS)	800
(VOLTS)	700
BVCER	700
BVCER	600
	600
		BVCER(sus) @ 200 mA
	500
	400
	10	100	1000
		RBE (Ω)

Figure 12. BVCER = f(ICER)

Motorola Bipolar Power Transistor Device Data

BUL45D2

TYPICAL SWITCHING CHARACTERISTICS

	1000								5
		IBon = IBoff			TJ = 125°C
	800	VCC = 300 V			TJ = 25°C				4
	800	PW = 20 μs							4
(ns)	600							( μs)	3
(ns)								( μs)
TIME	400			IC/IB = 10				TIME	2
t,								t,

							IC/IB = 5
	200								1
	0	1	1.5	2	2.5	3	3.5	4	0
	0.5	1	1.5	2	2.5	3	3.5	4

						IBon = IBoff
		I /I	= 10			VCC = 300 V
		C B				PW = 20 μs
						PW = 20 μs
		TJ = 125°C		IC/IB = 5
		TJ = 125°C
		TJ = 25°C
0.5	1	1.5	2	2.5	3	3.5	4

IC, COLLECTOR CURRENT (AMPS)	IC, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switch Time, ton	Figure 14. Resistive Switch Time, toff

	4
		IC/IB = 5		IBon = IBoff
		IC/IB = 5		VCC = 15 V
				VCC = 15 V
	3			VZ = 300 V
	3			LC = 200	μH
				LC = 200	μH
μs)
(
t, TIME	2
t, TIME
	1	TJ = 125°C
		TJ = 125°C
		TJ = 25°C
	0
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

	5
				IBon = IBoff
	4			VCC = 15 V
	4			VZ = 300 V
				VZ = 300 V
				LC = 200 μH
μs)	3
μs)
t, TIME (	2
	1	TJ = 125°C
		TJ = 25°C
	0
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

			tsi @ IC/IB = 5
	600
		IBon = IBoff	TJ = 125°C
	500	VCC = 15 V	TJ = 25°C
		VZ = 300 V
	400	LC = 200 μH			tc
	400
(ns)
t, TIME	300
t, TIME
	200
	100
	0				tfi
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 17. Inductive Switching,

tc & tfi @ IC/IB = 5

Figure 16. Inductive Storage Time,

		tsi @ IC/IB = 10
	400
		IBoff = IBon
		VCC = 15 V
	300	VZ = 300 V
		LC = 200 μH
(ns)
t, TIME	200
t, TIME
	100
		TJ = 125°C
		TJ = 25°C
	0
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 18. Inductive Switching,

tfi @ IC/IB = 10

6	Motorola Bipolar Power Transistor Device Data

BUL45D2

TYPICAL SWITCHING CHARACTERISTICS

1500
	IBoff = IBon	TJ = 125°C
	VCC = 15 V	TJ = 25°C
	VZ = 300 V
1000	LC = 200 μH
t, TIME (ns)
500
0
0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 19. Inductive Switching,

					tc @ IC/IB = 10
	450
		IBoff = IBon				TJ = 125°C
		VCC = 15 V				TJ = 25°C
	350	VZ = 300 V							IC = 1 A
TIME (ns)	350	LC = 200	μH						IC = 1 A
		LC = 200	μH
	250
, FALL	250
, FALL
fi
t
	150
									IC = 2 A
	50	4	6		10	12
	2	4	6	8	10	12	14	16	18	20

hFE, FORCED GAIN

Figure 21. Inductive Fall Time

3000
				IB1 = IB2		IBon = IBoff
						VCC = 15 V
						VZ = 300 V
2000						LC = 200 μH
2000
(ns)
t, TIME	IB = 50 mA
t, TIME	IB = 100 mA
1000	IB = 100 mA
1000
	IB = 200 mA
		IB = 500 mA
0			IB = 1 A
0						3.5	4
0.5	1	1.5	2	2.5	3	3.5	4

IC, COLLECTOR CURRENT (AMPS)

Figure 23. Inductive Storage Time, tsi

	5
		TJ = 125°C		IBon = IBoff
		TJ = 25°C		VCC = 15 V
(μs)			IC = 1 A	VZ = 300 V
			IC = 1 A	LC = 200 μH
	4			LC = 200 μH
, STORAGE TIME	4
, STORAGE TIME	3
si
t		IC = 2 A
		IC = 2 A
	2
	0	5	10	15	20
		hFE, FORCED GAIN

Figure 20. Inductive Storage Time

	1400
	1200	IBon = IBoff				TJ = 125°C
	1200	VCC = 15 V				TJ = 25°C
(ns)		VCC = 15 V				TJ = 25°C
(ns)	1000	VZ = 300 V
TIME	1000	LC = 200 μH
		LC = 200 μH
	800								IC = 2 A
, CROSSOVER									IC = 2 A

	600
	400
c
t
	200
	0								IC = 1 A
	2	4	6	8	10	12	14	16	18	20

hFE, FORCED GAIN

Figure 22. Inductive Crossover Time

	360
(ns)		dI/dt = 10 A/μs
TIME		dI/dt = 10 A/μs
TIME		TC = 25°C
RECOVERY	340
RECOVERY
, FORWARD	320
, FORWARD
fr
t
	300
	0	0.5	1	1.5	2
		IF, FORWARD CURRENT (AMP)

Figure 24. Forward Recovery Time tfr

Motorola Bipolar Power Transistor Device Data

BUL45D2

TYPICAL SWITCHING CHARACTERISTICS

VCE
dyn 1 μs
	dyn 3 μs
0 V
90% IB
1 μs
IB	μs
3	μs
	TIME

Figure 25. Dynamic Saturation

Voltage Measurements

10
9	IC					90% IC
	IC					90% IC
8			tsi			tfi
7			tsi
7
6							10% IC
5	Vclamp		10% Vclamp				10% IC
5	Vclamp		10% Vclamp			tc
4						tc
4
3	IB	90% IB1
2	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 26. Inductive Switching Measurements

		VFRM	VFR (1.1 VF unless
			otherwise specified)
VF		tfr		VF
		tfr
	0.1 VF
0
IF	10% IF
	10% IF
0	2	4	6	8	10

Figure 27. tfr Measurements

8	Motorola Bipolar Power Transistor Device Data

BUL45D2

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 μF	150 Ω		100 Ω		MTP8P10	100 μF
1 μF	150 Ω		100 Ω		MTP8P10
	3 W		3 W
	3 W
MPF930					MTP8P10	RB1	VCE
MPF930					MUR105	RB1	IB1
	MPF930				MUR105		IB1
+10 V	MPF930					Iout	I
							B
						A
50 Ω					MJE210	RB2
						RB2

COMMON				150 Ω	MTP12N10		V(BR)CEO(sus)
					MTP12N10

	500	μ	F	3 W			L = 10 mH
	500		F				RB2 = ∞
							RB2 = ∞
						1 μF	VCC = 20 Volts
							IC(pk) = 100 mA

±Voff

IC PEAK

VCE PEAK

IB2

Inductive Switching

L = 200 μH

RB2 = 0

VCC = 15 Volts RB1 selected for desired IB1

RBSOA

L = 500 μH

RB2 = 0

VCC = 15 Volts RB1 selected for desired IB1

TYPICAL CHARACTERISTICS

	100
(AMPS)	10			1 μs
(AMPS)			10 μs
CURRENT			10 μs
	1	5 ms	1 ms	SOA
				SOA
COLLECTOR				EXTENDED
		DC
	0.1

,
C
I
	0.01
	10	100		1000

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 28. Forward Bias Safe Operating Area

	6
(AMPS)	5					TC ≤ 125°C
	5					GAIN ≥	5
						LC = 2 mH
CURRENT	4
CURRENT	3
, COLLECTOR	3
	2					± 5 V
						± 5 V
	1
C				0 V
I					±1.5 V


	0			500
	200	300	400	500	600	700	800

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 29. Reverse Bias Safe Operating Area

Motorola Bipolar Power Transistor Device Data

BUL45D2

TYPICAL CHARACTERISTICS

	1
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6
		THERMAL DERATING
	0.4
POWER	0.4
POWER	0.2
	0.2
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 30. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based

on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30.

TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

TYPICAL THERMAL RESPONSE

		1
TRANSIENT THERMAL RESISTANCE			0.5
			0.2
	(NORMALIZED)		0.1		P(pk)		RθJC(t) = r(t) RθJC
		0.1	0.05		P(pk)		RθJC(t) = r(t) RθJC
		0.1	0.05				RθJC = 2.5°C/W MAX
							RθJC = 2.5°C/W MAX
							D CURVES APPLY FOR POWER
			0.02		t1		PULSE TRAIN SHOWN
					t1		READ TIME AT t1
			SINGLE PULSE		t	2	READ TIME AT t1
			SINGLE PULSE			2	TJ(pk) ± TC = P(pk) RθJC(t)
					DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) RθJC(t)
r(t),					DUTY CYCLE, D = t1/t2
		0.01
		0.01		0.1	1	10	100	1000

t, TIME (ms)

Figure 31. Typical Thermal Response (ZθJC(t)) for BUL45D2

10	Motorola Bipolar Power Transistor Device Data

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06.01.2022398.44 Кб2BUL146RE.PDF
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06.01.2022385.51 Кб2BUL147RE.PDF
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06.01.2022100.49 Кб2BUL43BRE.PDF
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06.01.2022516.48 Кб2BUL44D2R.PDF
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06.01.2022324.85 Кб2BUL44REV.PDF
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06.01.2022455.38 Кб2BUL45D2R.PDF
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06.01.2022402.02 Кб2BUL45REV.PDF
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06.01.2022118.33 Кб2BUS50REV.PDF
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06.01.2022332.64 Кб2BUS98REV.PDF
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06.01.2022122.96 Кб2BUT11AFR.PDF
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06.01.2022291.77 Кб2BUT33REV.PDF