Добавил:
Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:

motorola / Bipolar / 2N3791RE

.PDF
Источник:
Скачиваний:
2
Добавлен:
06.01.2022
Размер:
228.96 Кб
Скачать

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3791/D

 

2N3791

Silicon PNP Power Transistors

2N3792

. . . designed for medium±speed switching and amplifier applications. These devices

 

 

feature:

 

10 AMPERE

Total Switching Time @ 3.0 A [1.0 μs (typ)

hFE (min) = 50 @ 1.0 A

POWER TRANSISTORS

Low VCE(sat) = 0.5 V (typ) @ IC = 5.0 A, IB = 0.5 A

PNP SILICON

Excellent Safe Area Limits

60 ± 80 VOLTS

Complementary NPN available Ð 2N3716

150 WATTS

 

 

CASE 1±07 TO±204AA (TO±3)

MAXIMUM RATINGS

Rating

Symbol

2N3791

2N3792

Unit

 

 

 

 

 

Collector±Base Voltage

VCB

60

80

Volts

Collector±Emitter Voltage

VCEO

60

80

Volts

Emitter±Base Voltage

VEB

7.0

7.0

Volts

Collector Current (Continuous)

IC

10

10

Amps

Base Current (Continuous)

IB

4.0

4.0

Amps

Power Dissipation

PD

150

150

Watts

Thermal Resistance

θJC

1.17

1.17

_C/W

Junction Operating and Storage Temperature Range

TJ, Tstg

± 65 to +200

_C

 

160

 

 

 

 

 

 

 

 

(WATTS)

140

 

 

 

 

 

 

 

 

120

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DISSIPATION

100

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

, POWER

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

P

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

175

200

 

0

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

Figure 1. Power±Temperature Derating Curve

Safe Area Limits are indicated by Figures 15, 16. Both limits are applicable and must be observed.

REV 7

Motorola, Inc. 1995

2N3791

2N3792

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

 

VCEO(sus)

 

 

Vdc

 

(IC = 200 mAdc, IB = 0)

2N3791

 

60

Ð

 

 

 

 

2N3792

 

80

Ð

 

 

 

 

 

 

 

 

 

Collector±Emitter Cutoff Current

 

ICEX

 

 

mAdc

 

(VCE = 60 Vdc, VBE = ± 1.5 Vdc)

2N3791

 

Ð

1.0

 

 

(VCE = 80 Vdc, VBE = ± 1.5 Vdc)

2N3792

 

Ð

1.0

 

 

(VCE = 60 Vdc, VBE = ± 1.5 Vdc, TC = 150_C)

2N3791

 

Ð

5.0

 

 

(VCE = 80 Vdc, VBE = ± 1.5 Vdc, TC = 150_C)

2N3792

 

Ð

5.0

 

 

Emitter±Base Cutoff Current

 

IEBO

Ð

5.0

mAdc

 

(VEB = 7.0 Vdc)

All Types

 

 

 

 

 

DC Current Gain (1)

 

hFE

 

 

Ð

 

(IC = 1.0 Adc, VCE = 2.0 Vdc)

 

 

50

180

 

 

(IC = 3.0 Adc, VCE = 2.0 Vdc)

 

 

30

Ð

 

 

Collector±Emitter Saturation Voltage (1)

 

VCE(sat)

Ð

1.0

Vdc

 

(IC = 5.0 Adc, IB = 0.5 Adc)

 

 

 

 

 

 

Base±Emitter On Voltage (1)

 

VBE(on)

 

 

Vdc

 

 

 

 

 

(IC = 5.0 A, VCE = 2.0 Vdc)

 

 

Ð

1.8

 

 

(IC = 10 Adc, VCE = 4.0 Vdc)

 

 

Ð

4.0

 

 

Current±Gain Ð Bandwidth Product

 

fT

4.0

Ð

MHz

 

(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz)

 

 

 

 

 

 

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

1.7 ms

6.7 ms

 

 

VALUES SHOWN FOR

 

 

 

 

 

 

 

 

 

 

 

 

IC = 5 A, IB1 = ± IB2 = 0.5 A

 

 

 

 

 

 

 

 

 

 

 

+ 9 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f 150 cps, DUTY CYCLE 2%

 

 

 

 

 

 

 

 

 

 

 

 

 

(μs)

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ts

 

 

 

WAVE SHAPE

 

 

± 30 V

 

TIMES

0.5

 

 

 

 

 

 

 

±11.5 V

AT POINT A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ton 30 μs

 

 

 

SWITCHING

 

 

 

 

 

 

 

 

 

 

 

6 Ω

 

 

 

 

 

 

 

 

 

 

100 Ω

 

 

20 Ω

4 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tf

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1 W

A

 

1 W

 

 

 

0.3

|IB1 = ± IB2| = IC/10

 

 

 

 

 

 

 

900 Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 30 V

 

 

 

 

tr

 

 

Hg RELAYS

900 Ω

UNIT

 

 

 

TC = 25°C

 

 

 

 

 

 

 

 

 

UNDER

 

 

0.2

 

 

 

 

 

 

 

 

 

+ 9 V

 

 

TEST

100 Ω

 

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

 

 

 

+ 4 V

 

 

0.1

± 62 V

 

100 Ω

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 2. Typical Switching Times and Test Circuit

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

 

 

 

 

2N3791

2N3792

 

500

2N3791, 2N3792

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

 

 

VCE = 2 V

 

 

 

TJ = +175°C

 

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

hFE +

IC ± ICBO

 

 

GAIN

TJ = + 25°C

 

 

 

 

 

 

 

 

 

IB ) ICBO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = ± 40°C

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

 

TJ = + 25°C

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

TJ = +175°C

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

10

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.01

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Current Gain Variations

 

2.4

 

 

 

 

 

 

 

 

 

 

+ 5.0

, SATURATION VOLTAGE (VOLTS)

 

 

ALL TYPES

 

 

 

 

 

 

COEFFICIENT (mV/ °C)

+ 4.0

2.0

 

TJ = + 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

βF = IC/IB (FORCED GAIN)

 

 

 

 

 

+ 3.0

1.6

 

 

 

 

 

 

VCE = 2 V

 

+ 2.0

 

 

 

 

 

 

 

 

 

 

1.2

 

 

 

 

 

 

 

 

βF = 10

+ 1.0

0.8

VBE(sat)

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

0.4

VBE

 

 

 

 

 

βF = 10

 

 

± 1.0

(sat)

 

 

 

 

 

 

 

 

 

TEMPERATURE

± 2.0

 

VCE(sat)

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

0

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

± 3.0

 

0.1

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

To compute saturation voltages

 

 

TJ (+100°C to +175°C)

 

 

V_(sat) @ operating TJ = V_(sat)

 

 

 

@ + 25°C + θv_ (operating TJ ± 25°C)

 

 

 

 

 

 

 

Use appropriate θv for voltage of interest.

 

 

 

 

 

 

 

Use appropriate curve for temperature range of interest.

 

 

 

 

 

θv = Temperatur ecoefficient

 

 

 

 

 

 

 

 

 

TJ (+ 25°C to +100°C)

 

 

 

 

 

 

 

θVC for VCE(sat)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ (±40°C to +25°C)

 

 

 

θVB for VBE(sat)

 

 

 

ALL TYPES

 

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

Figure 4. Saturation Voltages

Figure 5. Temperature Coefficients

Motorola Bipolar Power Transistor Device Data

3

2N3791 2N3792

IC, COLLECTOR CURRENT (AMPS)

10

7

5

3

2

1

0.7

0.5

0.3

0.2

0.1

0

SAFE OPERATING AREAS

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(AMPS)

7

 

 

 

 

 

 

 

 

 

 

 

DC to 5 ms

 

 

 

250

μs

5

DC to 5 ms

 

 

 

 

 

250

μs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1 ms

 

 

 

 

CURRENT

3

 

 

 

 

 

 

 

 

50

s

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50 μs

 

2

 

 

1 ms

 

 

 

 

 

500 μs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

500 μs

 

 

 

 

1

 

 

 

 

 

 

 

 

μ

 

 

 

 

 

 

 

COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

10

20

30

40

50

60

 

70

0.1

10

20

30

40

50

60

70

80

90

 

0

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

 

Figure 6. 2N3789, 2N3791

 

 

 

 

 

Figure 7. 2N3790, 2N3792

 

 

 

The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector±emitter

short. (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TJ, the power±temperature derating curve must be observed for both steady state and pulse power conditions.

 

10

 

 

 

 

 

 

5.0

 

 

 

 

 

(mA)

2.0

VCE = VCEO ± 20 V

 

 

 

CURRENT

 

 

 

 

 

1.0

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

, COLLECTOR

0.2

TJ = +175°C

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

C

 

TJ = +100°C

 

 

 

 

I

 

 

 

 

 

 

0.02

 

 

 

 

 

 

 

 

 

 

 

0.01

REVERSE

 

FORWARD

 

 

+ 0.4

+ 0.2

0

± 0.2

± 0.4

 

+ 0.6

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 8. Cut±Off Region Transconductance

 

20

VCE = VCEO ± 20 V

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

(mA)

5.0

 

 

 

 

 

 

 

 

 

 

 

CURRENT

2.0

 

 

TJ = +175°C

 

 

1.0

 

 

 

 

 

0.5

 

 

 

 

 

,COLLECTOR

 

 

 

 

 

0.2

 

 

TJ = +100°C

 

0.1

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

C

 

 

 

 

 

I

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

0.01

10

100

1K

10K

100K

 

1.0

 

 

RBE, EXTERNAL BASE±EMITTER RESISTANCE (OHMS)

 

Figure 9. Collector Cut±Off Current versus

Base±Emitter Resistance

4

Motorola Bipolar Power Transistor Device Data

2N3791 2N3792

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

5

2N3791 2N3792

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

2N3791/D

*2N3791/D*

Соседние файлы в папке Bipolar