MJE18206

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TJ = 125°C

VCC = 15 V

VZ = 300 V

LC = 200 μH

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE18206/D

Designer's Data Sheet

SWITCHMODE NPN Bipolar

Power Transistor for Electronic Light Ballast and Switching Power Supply Applications

The MJE/MJF18206 have an application specific state±of±the±art die dedicated to the electronic ballast (ªlight ballastº) and power supply applications.

•Improved Global Efficiency Due to Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

ÐNo Coil Required in Base Circuit for fast Turn±Off (No Current Tail)

•Full Characterization at 125_C

•Motorola ª6 SIGMAº Philosophy Provides Tight and Reproducible Parametric Distributions

•Two Package Choices: Standard TO±220 or Isolated TO±220

MAXIMUM RATINGS

Rating		Symbol	MJE18206	MJF18206	Unit

Collector±Emitter Voltage		VCEO	600		Vdc
Collector±Base Voltage		VCBO	1200		Vdc
Collector±Emitter Voltage		VCES	1200		Vdc
Emitter±Base Voltage		VEBO	10		Vdc
Collector Current Ð Continuous		IC	8		Adc
Ð Peak (1)		ICM	16
Base Current Ð Continuous		IB	5		Adc
Ð Peak (1)		IBM	9
RMS Isolation Voltage (2)	Per Figure 22	VISOL1		4500	Volts
(for 1 sec, R.H. ≤ 30%)	Per Figure 23	VISOL2		3500
TC = 25°C	Per Figure 24	VISOL3		1500
*Total Device Dissipation @ TC = 25°C		PD	100	40	Watt
*Derate above 25_C			0.8	0.32	W/_C

Operating and Storage Temperature		TJ, Tstg	± 65 to 150		_C
THERMAL CHARACTERISTICS

Rating		Symbol	MJE18206	MJF18206	Unit

Thermal Resistance Ð Junction to Case		RqJC	1.25	3.125	_C/W
Ð Junction to Ambient		RqJA	62.5	62.5
Maximum Lead Temperature for Soldering		TL	260		_C
Purposes: 1/8″ from Case for 5 Seconds

(1)Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

(2)Proper strike and creepage distance must be provided.

MJE18206

MJF18206

POWER TRANSISTORS

8 AMPERES

1200 VOLTS

40 and 100 WATTS

CASE 221A±06

TO±220AB

CASE 221D±02

TO±220 FULLPACK

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

MJE18206

MJF18206

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage

Vdc

(IC = 100 mA, L = 25 mH)

VCEO(sus)

550

630

(IC = 200 mA, L = 25 mH, R = 200 Ω)

VCER(sus)

600

700

Collector±Base Breakdown Voltage

VCBO

1200

1320

Vdc

(ICBO = 1 mA, IE = 0)

Emitter±Base Breakdown Voltage

VEBO

12.9

Vdc

(IEBO = 1 mA, IC = 0)

Collector Cutoff Current (VCE = 550 V, IB = 0)

@ TC = 25°C

ICEO

200

μAdc

Collector Cutoff Current (VCE = 550 V, IB = 0)

@ TC = 125°C

2000

Collector Cutoff Current (VCE = Rated VCES, VBE = 0)

@ TC = 25°C

ICES

100

μAdc

@ TC = 125°C

1000

Collector Cutoff Current (VCE = 1000 V, VBE = 0)

@ TC = 125°C

100

Collector Cutoff Current

ICBO

100

μAdc

(VCB = 1200 V, IE = 0)

Emitter±Cutoff Current

IEBO

100

μAdc

(VEB = 9 Vdc, IC = 0)

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

@ TC = 25°C

VBE(sat)

Vdc

(IC = 1.3 Adc, IB = 0.13 Adc)

0.77

@ TC = 125°C

0.67

0.9

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C

0.85

1.1

@ TC = 125°C

0.75

(IC = 3 Adc, IB = 0.6 Adc)

@ TC = 25°C

0.91

1.1

@ TC = 125°C

0.8

Collector±Emitter Saturation Voltage

@ TC = 25°C

VCE(sat)

Vdc

(IC = 1.3 Adc, IB = 0.13 Adc)

0.3

0.75

@ TC = 125°C

0.4

(IC = 3 Adc, IB = 0.6 Adc)

@ TC = 25°C

0.4

0.75

@ TC = 125°C

0.8

1.25

DC Current Gain

@ TC = 25°C

hFE

(IC = 0.5 Adc, VCE = 5 Vdc)

@ TC = 125°C

(IC = 1 Adc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

(IC = 3 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

(IC = 10 mAdc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

200

Input Capacitance (VEB = 8 Vdc)

Cib

2000

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

IC = 1.3 Adc

@ 1 μs

@ TC = 25°C

VCE(dsat)

7.5

IB1 = 130 mAdc

Voltage:

@ 3 μs

@ TC = 25°C

4.5

Determined 1 μs and

VCC = 300 V

3 μs respectively after

IC = 3 Adc

@ 1 μs

@ TC = 25°C

14.5

rising IB1 reaches

I = 0.6 Adc

90% of final IB1

@ 3 μs

@ TC = 25°C

VCC = 300 V

2	Motorola Bipolar Power Transistor Device Data

MJE18206

MJF18206

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

Turn±on Time

IC = 3 Adc, IB1 = 0.6 Adc

@ TC = 25°C

ton

200

350

Turn±off Time

IB2 = 1.5 Adc

@ T

= 25°C

2.5

μs

VCC = 300 Vdc

off

@ TC = 125°C

2.5

Turn±on Time

IC = 3 Adc, IB1 = 0.6 Adc

@ TC = 25°C

ton

190

250

Turn±off Time

IB2 = 0.6 Adc

@ T

= 25°C

3.7

4.5

μs

VCC = 300 Vdc

= 125°C

off

@ T

4.5

Turn±on Time

IC = 1 Adc, IB1 = 70 mAdc

@ TC = 25°C

125

300

400

750

IB2 = 1 Adc

Turn±off Time

VCC = 125 Vdc

600

1.2

μs

PW = 70 μs

@ TC = 25°C

450

700

Turn±on Time

= 1 Adc, I = 100 mAdc

@ TC

= 25°C

ton

250

350

225

@ TC = 125 C

IB2 = 500 mAdc

Turn±off Time

@ TC = 25°C

toff

2.75

μs

VCC = 300 Vdc

@ TC = 125°C

2.5

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

Fall Time

@ TC = 25°C

150

200

IC = 1.3 Adc

@ TC = 125°C

225

Storage Time

@ TC = 25°C

1.6

μs

IB1 = 0.13 Adc

@ TC = 125°C

1.9

IB2 = 0.65 Adc

Crossover Time

@ TC = 25°C

260

350

@ TC = 125°C

300

Fall Time

@ TC = 25°C

300

450

IC = 3 Adc

@ TC = 125°C

400

Storage Time

@ TC = 25°C

2.25

2.75

μs

IB1 = 0.6 Adc

@ TC = 125°C

2.5

IB2 = 1.5 Adc

Crossover Time

@ TC = 25°C

500

800

@ TC = 125°C

700

Fall Time

@ TC = 25°C

350

500

IC = 3 Adc

@ TC = 125°C

500

Storage Time

@ TC = 25°C

4.25

μs

IB1 = 0.6 Adc

@ TC = 125°C

5.1

IB2 = 0.6 Adc

Crossover Time

@ TC = 25°C

600

800

@ TC = 125°C

1100

Motorola Bipolar Power Transistor Device Data

MJE18206 MJF18206

TYPICAL STATIC CHARACTERISTICS

	100
	TJ = 125°C		TJ = 25°C		VCE = 1 V
GAIN
, DC CURRENT	TJ = ± 20°C
	10

FE
h
	1	0.01
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	100
		TJ = 125°C				VCE = 5 V
		TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
	10

FE
h
	1		0.01
	0.001		0.01	0.1	1	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volts

	10
		IC/IB = 5
,VOLTAGE (VOLTS)	1
,VOLTAGE (VOLTS)	0.1
CE	0.1
CE
V					TJ = 125°C
					TJ = 125°C
					TJ = 25°C
	0.01				TJ = ± 20°C
	0.01	0.01
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 5A. Collector±Emitter Saturation Voltage

	100
		TJ = 125°C	TJ = 25°C		VCE = 3 V
GAIN
, DC CURRENT	10	TJ = ± 20°C
	10

FE
h
	1	0.01
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volts

	2
				TJ = 25°C
	VCE(sat)	VCE(sat)		7 A
	VCE(sat)	(I = 2 A)		7 A
(VOLTS)	(IC = 1 A)	C	5 A
(VOLTS)

VOLTAGE,			4 A
VOLTAGE,	1		3 A
	1

CE
V
	0
	10	100	1000	10000

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

	10
		IC/IB = 10
,VOLTAGE (VOLTS)	1
,VOLTAGE (VOLTS)	0.1
CE	0.1
CE
V					TJ = 125°C
					TJ = 125°C
					TJ = 25°C
	0.01				TJ = ± 20°C
	0.001	0.01	0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 5B. Collector±Emitter Saturation Voltage

4	Motorola Bipolar Power Transistor Device Data

MJE18206 MJF18206

TYPICAL STATIC CHARACTERISTICS

	1.5
(VOLTS)	1
(VOLTS)
, VOLTAGE	TJ = ± 20°C
, VOLTAGE	0.5	TJ = 25°C
BE	0.5	TJ = 25°C
BE
V		TJ = 125°C			IC/IB = 5
		TJ = 125°C			IC/IB = 5
					IC/IB = 10
	0
	0.001	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

	10000
		TJ = 25°C
		f(test) = 1 MHz
(pF)	1000	Cib (pF)
CAPACITANCE	1000
		Cob (pF)
	100
C,	100
C,
	10
	1	10	100
		VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Base±Emitter Saturation Region

Figure 7. Capacitance

	1600
	1400						125°C
	1200		IC/IB = 10
	1200
(ns)	1000							25°C
		IC/IB = 5						25°C
	800
t, TIME	800
t, TIME	600
	600
	400							IB1 = IB2
								IB1 = IB2
	200							VCC = 300 V
	200							PW = 20 μs
								PW = 20 μs
	0			2	2.5	3	3.5	4	4.5
	0.5	1	1.5	2	2.5	3	3.5	4	4.5	5
			IC, COLLECTOR CURRENT (AMPS)

Figure 8. Resistive Switching, ton

	8				TJ = 25°C
	7				TJ = 25°C			IB1 = IB2
	7				TJ = 125	°		VCC = 300 V
					TJ = 125	C		VCC = 300 V
	6							PW = 20 μs
	6				IC/IB = 5
μs)	5
TIME (	4
t,
	3
	2	IC/IB = 10
	2
	1
	0.5	1	1.5	2	2.5	3	3.5	4	4.5	5
			IC, COLLECTOR CURRENT (AMPS)

Figure 9. Resistive Switching, toff

	6				TJ = 125°C	IB1 = IB2				6
					TJ = 125°C	IB1 = IB2
					TJ = 25°C	VCC = 15 V
	5					VZ = 300 V
	5					LC = 200	μ	H	s)
						LC = 200		H	(μ	5
(ns)									TIME	5
(ns)									TIME
t, TIME	4								, STORAGE
t, TIME		IC/IB = 5							, STORAGE	4
	3								si
	3								t
				IC/IB = 10
	2	1	1.5	2	2.5	3			3.5	3
	0.5	1	1.5	2	2.5	3			3.5

IC, COLLECTOR CURRENT (AMPS)	hFE, FORCED GAIN
Figure 10. Inductive Storage Time, tsi	Figure 11. Inductive Storage Time

Motorola Bipolar Power Transistor Device Data

MJE18206 MJF18206

TYPICAL STATIC CHARACTERISTICS

1500		TJ = 125°C
IB1 = IB2		TJ = 125°C
VCC = 15 V		TJ = 25°C
VZ = 300 V		tc
LC = 200 μH
1000
(ns)			tfi
t, TIME			tc
500			tc
500
			tfi
0
0	1	2	3
	IC, COLLECTOR CURRENT (AMPS)

Figure 12. Inductive Switching,

	1100	IB1 = IB2	TJ = 125°C
		IB1 = IB2	TJ = 125°C
	900	VCC = 15 V	TJ = 25°C
	900	VZ = 300 V
		LC = 200 μH			tc
t, TIME (ns)	700				tc
	700
	500
	300				tfi
					tfi
	100	1
	0	1	2	3	4

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Switching,

			tc & tfi @ IC/IB = 5
	680	IB1 = IB2						1200
		IB1 = IB2				TJ = 125°C
		VCC = 15 V				TJ = 25°C		1000
		VZ = 300 V					(ns)	1000
		LC = 200 μH			IC = 2 A		(ns)
TIME (ns)	480	LC = 200 μH			IC = 2 A		TIME
	480
								800

FALL		IC = 1 A					CROSSOVER	600
,	280							600
,
fi
t
t
							,
							c
							t	400
								400
	80	5	7	9	11	13	15	200
	3	5	7	9	11	13	15

				tc & tfi @ IC/IB = 10
			TJ = 125°C						I		= I
			TJ = 25°C						B1			B2
			TJ = 25°C						V	CC		= 15 V
									VZ = 300 V
							IC = 2 A		LC = 200 μH
							IC = 2 A
							IC = 1 A
3	4	5	6	7	8	9	10	11	12	13		14	15

hFE, FORCED GAIN	hFE, FORCED GAIN
Figure 14. Inductive Fall Time	Figure 15. Inductive Crossover Time

	1400		TJ = 25°C	100
	1300	BVCER (VOLTS) @ 10 mA	TJ = 25°C
		BVCER (VOLTS) @ 10 mA	(AMPS)

	1200			10
BVCER (VOLTS)	1100		COLLECTOR CURRENT
	1000			1
	900
	800	BVCER(sus) @ 200 mA		0.1

			,
	700		C
			C
			I

	600	100	1000	0.01
	10	100	1000
		RBE (Ω)

	5 ms	1 ms	10 μs	1 μs
				SOA
	MJE18206±DC			EXTENDED
	MJF18206±DC

1	10		100	1000
	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 16. BVCER = f (RBE)

Figure 17. Forward Bias Safe Operating Area

6	Motorola Bipolar Power Transistor Device Data

MJE18206 MJF18206

TYPICAL STATIC CHARACTERISTICS

	10
(AMPS)				TC ≤ 125°C
	8			GAIN ≥	5
	8			LC = 4 mH
				LC = 4 mH
CURRENT	6
CURRENT
, COLLECTOR	4
, COLLECTOR	2		± 5 V
C
I
		0 V	±1.5 V
	0		±1.5 V
	0
	400	600	800	1000	1200

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 18. Reverse Bias Switching Safe

Operating Area

	1.0
							SECOND
FACTOR	0.8						BREAKDOWN
							DERATING
	0.6
DERATING	0.6
DERATING	0.4
POWER	0.2				THERMAL
	0.2				DERATING
					DERATING
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 19. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 17 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 17 may be found at any case temperature by using

the appropriate curve on Figure 19.

TJ(pk) may be calculated from the data in Figures 22 and 23. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base±to±emitter junction reverse biased. The safe level is specified as a reverse± biased safe operating area (Figure 18). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

TYPICAL SWITCHING CHARACTERISTICS

(IB1 = IB2 FOR ALL CURVES)

VCE	dyn 1 μs
	dyn 1 μs
		dyn 3 μs
0 V
90% IB
1	μs
IB	3	μs
	3	μs
		TIME

Figure 20. Dynamic Saturation

Voltage Measurements

10
9	IC					90% IC
8			tsi			tfi
7			tsi
7
6							10% IC
5	Vclamp		10% Vclamp			tc	10% IC
4						tc
4
3	IB	90% IB1
2
1
0
0	1	2	3	4	5	6	7	8
				TIME

Figure 21. Inductive Switching Measurements

Motorola Bipolar Power Transistor Device Data

MJE18206 MJF18206

TYPICAL SWITCHING CHARACTERISTICS

(IB1 = IB2 FOR ALL CURVES)

Table 1. Inductive Load Switching Drive Circuit

+15 V
1 μF	150 Ω	100 Ω	MTP8P10	100 μF
1 μF	150 Ω	100 Ω	MTP8P10
	3 W	3 W
	3 W
				MTP8P10
MPF930			MUR105	RB1
			MUR105
+10 V	MPF930			Iout
				A
50 Ω			MJE210	RB2
				RB2

COMMON		150 Ω		MTP12N10
		150 Ω		MTP12N10
	500 μF	3 W
	500 μF
				1 μF

±Voff

IC PEAK

VCE PEAK

VCE

IB1

IB2

V(BR)CEO(sus)	Inductive Switching	RBSOA
L = 10 mH	L = 200 μH	L = 500 μH
RB2 = ∞	RB2 = 0	RB2 = 0
VCC = 20 Volts	VCC = 15 Volts	VCC = 15 Volts
IC(pk) = 100 mA	RB1 selected for desired IB1	RB1 selected for desired IB1

8	Motorola Bipolar Power Transistor Device Data

MJE18206 MJF18206

TYPICAL THERMAL RESPONSE (IB1 = IB2 FOR ALL CURVES)

		1
		0.5
r(t), TRANSIENT THERMAL	RESISTANCE (NORMALIZED)	0.2
		0.1				P(pk)	RθJC(t) = r(t) RθJC
		0.1					RθJC = 1.25°C/W MAX
		0.05					D CURVES APPLY FOR
		0.02				t1	POWER PULSE TRAIN
		0.02					SHOWN READ TIME AT t1
							SHOWN READ TIME AT t1
			SINGLE PULSE			t2	TJ(pk) ± TC = P(pk) RθJC(t)
						DUTY CYCLE, D = t1/t2
		0.01
		0.01	0.1	1	10	100	1000

t, TIME (ms)

Figure 22. Typical Thermal Response (ZθJC(t)) for MJE18206

		1
			0.5
r(t), TRANSIENT THERMAL	RESISTANCE (NORMALIZED)		0.2
		0.1	0.1			P(pk)		RθJC(t) = r(t) RθJC
		0.1						RθJC = 3.55°C/W MAX
		0.05						D CURVES APPLY FOR
						t1		POWER PULSE TRAIN
			0.02			t1	t2	SHOWN READ TIME AT t1
			0.02				t2	TJ(pk) ± TC = P(pk) RθJC(t)
			SINGLE PULSE			DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) RθJC(t)
			SINGLE PULSE			DUTY CYCLE, D = t1/t2
		0.01
		0.01	0.1	1	10	100	1000	10000	100000

t, TIME (ms)

Figure 23. Typical Thermal Response (ZθJC(t)) for MJF18206

Motorola Bipolar Power Transistor Device Data

MJE18206		MJF18206
			TEST CONDITIONS FOR ISOLATION TESTS*

		MOUNTED		MOUNTED		MOUNTED
	CLIP	FULLY ISOLATED	CLIP	FULLY ISOLATED	0.107″ MIN	FULLY ISOLATED	0.107″ MIN
	CLIP	PACKAGE	CLIP	PACKAGE		PACKAGE
		PACKAGE		PACKAGE		PACKAGE

LEADS	LEADS
HEATSINK	HEATSINK
0.110″ MIN

LEADS

HEATSINK

Figure 24. Clip Mounting Position for	Figure 25. Clip Mounting Position
Isolation Test Number 1	for Isolation Test Number 2

Figure 26. Screw Mounting Position

for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together

MOUNTING INFORMATION**

4±40 SCREW

CLIP

PLAIN WASHER

HEATSINK
COMPRESSION WASHER
NUT	HEATSINK
NUT
Figure 27a. Screw±Mounted	Figure 27b. Clip±Mounted

Figure 27. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4±40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4±40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.

** For more information about mounting power semiconductors see Application Note AN1040.

10	Motorola Bipolar Power Transistor Device Data

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