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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE16204/D

Designer's Data Sheet

SCANSWITCH

NPN Bipolar Power Deflection Transistor

For High and Very High Resolution Monitors

The MJE16204 is a state±of±the±art SWITCHMODE bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very resolution, full page, monochrome monitors.

•550 Volt Collector±Base Breakdown Capability

•Typical Dynamic Desaturation Specified (New Turn±Off Characteristic)

•Application Specific State±of±the±Art Die Design

•Isolated or Non±Isolated TO±220 Type Packages

•Fast Switching:

65 ns Inductive Fall Time (Typ)

680 ns Inductive Storage Time (Typ)

•Low Saturation Voltage:

0.4Volts at 3.0 Amps Collector Current and 400 mA Base Drive

•Low Collector±Emitter Leakage Current Ð 100 μA Max at 550 Volts Ð V CES

•High Emitter±Base Breakdown Capability For High Voltage Off Drive Circuits Ð

9.0Volts (Min)

•Case 221D is UL Recognized at 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating		Symbol	MJE16204	Unit

Collector±Emitter Breakdown Voltage		VCES	550	Vdc
Collector±Emitter Sustaining Voltage		VCEO(sus)	250	Vdc
Emitter±Base Voltage		VEBO	8.0	Vdc
RMS Isolation Voltage(2)	Per Fig. 14	VISOL	Ð	V
(for 1 sec, TA = 25_C,	Per Fig. 15		Ð
Rel. Humidity < 30%)	Per Fig. 16		Ð

Collector Current Ð Continuous		IC	6.0	Adc
Ð Pulsed (1)		ICM	8.0
Base Current Ð Continuous		IB	2.0	Adc
Ð Pulsed (1)		IBM	4.0
Repetitive Emitter±Base Avalanche Energy		W(BER)	0.2	mJ
Total Power Dissipation @ TC = 25_C		PD	80	Watts
Total Power Dissipation @ TC = 100_C			32
Derated above TC = 25_C			0.64	W/_C
Operating and Storage Temperature Range		TJ, Tstg	± 55 to 150	_C
THERMAL CHARCTERISTICS

Characteristic		Symbol	Max	Unit

Thermal Resistance Ð Junction to Case		RqJC	1.56	_C/W
Lead Temperature for Soldering Purposes		TL	260	_C
1/8″ from the case for 5 seconds

MJE16204

POWER TRANSISTORS

6.0 AMPERES

550 VOLTS Ð VCES

45 AND 80 WATTS

CASE 221A±06

TO±220AB

MJE16204

(1)Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

(2)Proper strike and creepage distance must be provided.

*Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink thermal grease applied, and a mounting torque of 6 to 8 inSlbs.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

SCANSWITCH, SWITCHMODE and Designer's are trademarks of Motorola, Inc.

(REPLACES MJF16204)

Motorola, Inc. 1995

MJE16204

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (1)

Collector Cutoff Current	ICES	Ð	Ð	100	mAdc
(VCE = 550 Vdc, VBE = 0 V)
Emitter±Base Leakage	IEBO	Ð	Ð	10	mAdc
(VEB = 8.0 Vdc, IC = 0)
Emitter±Base Breakdown Voltage	V(BR)EBO	8.0	11	Ð	Vdc
(IE = 1.0 mA, IC = 0)
Collector±Emitter Sustaining Voltage (Table 1)	VCEO(sus)	250	325	Ð	Vdc
(IC = 10 mAdc, IB = 0)
ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage	VCE(sat)				Vdc
(IC = 1.0 Adc, IB = 133 mAdc)		Ð	0.25	0.6
(IC = 3.0 Adc, IB = 400 mAdc)		Ð	0.4	1.0
Base±Emitter Saturation Voltage	VBE(sat)	Ð	0.9	1.5	Vdc
Base±Emitter Saturation Voltage	VBE(sat)	Ð	0.9	1.5	Vdc
(IC = 3.0 Adc, IB = 400 mAdc)
DC Current Gain	hFE	8.0	14	20	Ð
(ICE = 6.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS

Dynamic Desaturation Interval (IC = 3.0 A, IB1 = 400 mA)	tds	Ð	50	Ð	ns
Output Capacitance	Cob	Ð	90	150	pF
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Gain Bandwidth Product	fT	10	Ð	Ð	MHz
(VCE = 10 Vdc, IC = 1.0 A, ftest = 1.0 MHz)
Emitter±Base Turn±Off Energy	EB(off)	Ð	6.6	Ð	mJ
(EB(avalanche) = 500 ns, RBE = 22 W)
Collector±Heatsink Capacitance	Cc±hs	Ð	3.0	Ð	pF
(Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink, VCE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS

Inductive Load (Table 2) (IC = 3.0 A, IB = 400 mA)					ns
Storage	tsv	Ð	680	1500
Fall Time	tfi	Ð	65	150

(1) Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

	60					VCE = 5 V			(VOLTS)	10
	50					VCE = 5 V			(VOLTS)	5
	50									7
GAINCURRENT	30	TJ = 100°C							VOLTAGE	3
GAINCURRENT									VOLTAGE				TJ = 25°C

		25°C
		25°C								2
	20									2			TJ = 100°C
h	20								COLLECTOR±EMITTER									IC/IB1 = 10
h		± 55°C							COLLECTOR±EMITTER	1
		± 55°C
																			7.5
, DC	10									0.7									7.5
	10									0.5									5
										0.5									5
FE	7									0.3
										0.3
	5									0.2
									,
	3								CE	0.1
	3	0.7	1	2	3	5	7	10	V	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7
	0.5	0.7	1	2	3	5	7	10		0.1	0.2	0.3	0.5	0.7	1	2	3	5	7
			IC, COLLECTOR CURRENT (AMPS)									IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical DC Current Gain

Figure 2. Typical Collector±Emitter

Saturation Voltage

2	Motorola Bipolar Power Transistor Device Data

																						MJE16204
VOLTAGE (VOLTS)	30												10
	20									TJ = 25°C		VOLTAGE (VOLTS)	7							I /I		= 5 to 10
	10												5							C B1
	10												5
	7												3
	5												3
	3												2
	2	IC = 1 A			2 A 3 A			6 A												TJ = 25°C

COLLECTOR±EMITTER,	1											,BASE±EMITTER	1
	1												1							TJ = 100			°
	0.7												0.7							TJ = 100			C
	0.5												0.7
	0.5												0.5
	0.3												0.5
	0.3
	0.2												0.3
													0.3
	0.1												0.2
	0.1											BE	0.2
	0.07											BE
CE	0.05											V	0.1
CE	0.03											V
V	0.03	0.05	0.07	0.1	0.2	0.3	0.5	0.7	1	2	3			0.5	0.7	1	2	3	5	7	10		20	30
	0.03	0.05	0.07	0.1	0.2	0.3	0.5	0.7	1	2	3		0.3	0.5	0.7	1	2	3	5	7	10		20	30
					IB, BASE CURRENT (AMPS)											IC, COLLECTOR CURRENT (AMPS)

Figure 3. Typical Collector±Emitter	Figure 4. Typical Base±Emitter
Saturation Region	Saturation Voltage

C, CAPACITANCE (pF)

10K
5K									TC	= 25	°C
3K
3K
2K
2K			Cib
1K			Cib


500



300
300
200
200
100



50



30										Cob
20
20
10

	0.2 0.3 0.5			3	5		20 30 50	100 200 300500
0.1	0.2 0.3 0.5	1	2	3	5	10	20 30 50	100 200 300500				1K

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Typical Capacitance

	20
(MHz)	18					VCE = 10 V
(MHz)	16					ftest = 1 MHz
FREQUENCY	14					TC = 25°C
	14
	12
	10
TRANSITION	8
	6
	4
,	4
,
T
f	2
	2
	0
	0	0.5	1	1.5	2	2.5	3

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Typical Transition Frequency

SAFE OPERATING AREA

	10
	7									10 μs
(AMPS)	5					MJE16204				10 μs
	3					MJE16204
	3
	2

CURRENT	1
	0.7		TC = 25°C
	0.5		TC = 25°C			dc			1 ms
	0.3					dc			1 ms

COLLECTOR
	0.2
	0.1			SECONDARY BREAKDOWN
	0.07			SECONDARY BREAKDOWN
	0.07			WIREBOND LIMIT
	0.05			WIREBOND LIMIT
,	0.03			THERMAL LIMIT
C				THERMAL LIMIT
I
	0.02
	0.01	5	7	10	20	30			100	200 250
	3	5	7	10	20	30	50	70	100	200 250

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 7. Maximum Forward Biased

Safe Operating Area

	7
(AMPS)	6
(AMPS)	5			VBE(off) = 5 V
CURRENT	5			VBE(off) = 5 V
	4

, COLLECTOR	3		VBE(off) = 0 V
	2	IC/IB1 ≥ 5
		TJ ≤ 100°C
C	1
I

	0
	50	150	250	350	450	550
		VCE(pk), PEAK COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 8. Maximum Reverse Biased

Safe Operating Area

Motorola Bipolar Power Transistor Device Data

MJE16204

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 7 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

	1
					SECOND BREAKDOWN
FACTOR	0.8					DERATING
FACTOR	0.6
DERATING	0.6
			THERMAL
	0.4		DERATING
POWER	0.2
	0.2
	0
	20	40	60	80	100	120	140	160
			TC, CASE TEMPERATURE (°C)

Figure 9. Power Derating

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base±to±emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.

The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage±current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the RBSOA characteristics.

Lcoil (ICpk)

T1 [ VCC

T1 adjusted to obtain IC(pk)

V(BR)CEO

L = 10 mH

RB2 = ∞

VCC = 20 Volts

	Table 1. RBSOA/V(BR)CEO(sus) Test Circuit
		0.02 μF		100	+ V ≈ 11 V
		0.02 μF

	H.P. 214
	OR EQUIV.				2N6191
	P.G.		20		2N6191
	P.G.
		+
	0	+
	0	10 μF			RB1
		±			RB1
	≈ ± 35 V					A
		0.02 μF			RB2
	50	+	±		2N5337
		1 μF
		500
				100	± V	IC(pk)
					± V
T1	+ V				IC
0 V		*IC				VCE(pk)
0 V	± V	*IC	L		VCE
	± V		L		VCE
A		T.U.T.
		MR856				IB1
	*IB					IB1
50	*IB				IB
		Vclamp			VCC
						IB2
			RBSOA
	*Tektronix		L = 200 μH
	*Tektronix		RB2 = 0
	*P±6042 or		RB2 = 0
	*P±6042 or		VCC = 20 Volts
	*Equivalent		VCC = 20 Volts
	*Equivalent		RB1 selected for desired IB1
			RB1 selected for desired IB1
			Note: Adjust ±V to obtain desired VBE(off) at Point A.

4	Motorola Bipolar Power Transistor Device Data

MJE16204

Table 2. High Resolution Deflection Application Simulator

+ 24 V

MC7812

(IC)

1 k

MJ11016

100 F

10 μF

(IB)

1 k

6.2 V

100 μF

10 μF

R10

2.7 k

9.1 k

470

100 V

0.005

0.1

R10

470

MUR460

(DC)

VCC

MJE

1 W

15031

% C

OUT

R510

250

MC1391P

SYNC

DUT

1 k

R12

470

MUR110

BS170

1 W

T1: Ferroxcube Pot Core #1811 P3C8

LB = 0.5 μH

Primary/Sec. Turns Ratio = 18:6

CY = 0.01 μF

Primary Inductance Gap:

LY = 13 μH

LP = 250 μH

	2K					200
TIME (ns)					TC = 25°C
	1K				TIME (ns)	100
	700			ICI/B1 = 7.5		70

STORAGE	500			10	FALL	50
					,
					f
					t
,
s
t
	300					30
	200					20
	1	2	3	5	7
		IC, COLLECTOR CURRENT (AMPS)

				TC = 25°C
		ICI/B1 = 7.5
		10
1	2	3	5	7	10
	IC, COLLECTOR CURRENT (AMPS)

Figure 10. Typical Collector Current Storage	Figure 11. Typical Collector Current Fall Time
Time in Deflection Circuit Simulator	in Deflection Circuit Simulator

Motorola Bipolar Power Transistor Device Data

MJE16204

DYNAMIC DESATURATIION

90% IC(pk)	tfi	(VOLTS)
		(VOLTS)

VCE = 20 V	VCE	VOLTAGE
VCE = 20 V	10% IC(pk)	VOLTAGE
IC		COLLECTOR±EMITTER
0		COLLECTOR±EMITTER
0
tsv
0
0% IB

DYNAMIC SATURATION TIME

IS MEASURED FROM VCE = 1 V

TO VCE = 5 V

tds

TIME (ns)

VCE

Figure 12. Deflection Simulator Switching	Figure 13. Definition of Dynamic
Waveforms From Circuit in Table 2	Saturation Measurement

The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, ªdynamicdesaturation.º In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turn±off transition. A sluggish transition results in serious consequences. As the saturation voltage of the output transistor increases,

the voltage across the yoke drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 12 and 13) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector current ramp, excellent turn±off switching performance, and significantly lower overall power dissipation.

6	Motorola Bipolar Power Transistor Device Data

																MJE16204
		1
		0.7	D = 0.5
		0.5	D = 0.5
	RESISTANCE (NORMALIZED)	0.5
r(t), TRANSIENT THERMAL		0.2	0.2
		0.2
		0.1	0.1											P(pk)
		0.1								RθJC(t) = r(t) RθJC
		0.07	0.05							RθJC(t) = r(t) RθJC
		0.07	0.05							RθJC = 1.56°C/W MAX
		0.05								RθJC = 1.56°C/W MAX
		0.05	0.02							D CURVES APPLY FOR POWER
										D CURVES APPLY FOR POWER
										PULSE TRAIN SHOWN					t1
						0.01				PULSE TRAIN SHOWN					t1
						0.01				READ TIME AT t1					t
		0.02								TJ(pk) ± TC = P(pk) RθJC(t)					2
		0.02
				SINGLE PULSE										DUTY CYCLE, D = t1/t2
		0.01		SINGLE PULSE										DUTY CYCLE, D = t1/t2
		0.01	0.02	0.05	0.1	0.2	0.5	1	2	5	10	20	50	100	200	500	10 k

t, TIME (ms)

Figure 14. Typical Thermal Response for MJE16204

Motorola Bipolar Power Transistor Device Data

MJE16204
				PACKAGE DIMENSIONS
	B	F		±T±	PLANESEATING
			T	C	NOTES:
4			T	S	1. DIMENSIONING AND TOLERANCING PER ANSI			INCHES		MILLIMETERS
					Y14.5M, 1982.	DIM		MIN	MAX	MIN	MAX
Q		A			2. CONTROLLING DIMENSION: INCH.	A	0.570		0.620	14.48	15.75
					3. DIMENSION Z DEFINES A ZONE WHERE ALL	A	0.570		0.620	14.48	15.75
					3. DIMENSION Z DEFINES A ZONE WHERE ALL	B	0.380		0.405	9.66	10.28
					BODY AND LEAD IRREGULARITIES ARE	C	0.160		0.190	4.07	4.82
1	2	3			ALLOWED.	C	0.160		0.190	4.07	4.82
1	2	3			ALLOWED.	D	0.025		0.035	0.64	0.88
						D	0.025		0.035	0.64	0.88
H			U			F	0.142		0.147	3.61	3.73
H			U			G	0.095		0.105	2.42	2.66
						G	0.095		0.105	2.42	2.66
		K				H	0.110		0.155	2.80	3.93
Z						J	0.018		0.025	0.46	0.64
Z						K	0.500		0.562	12.70	14.27
						K	0.500		0.562	12.70	14.27
						L	0.045		0.060	1.15	1.52
L						N	0.190		0.210	4.83	5.33
L				R		Q	0.100		0.120	2.54	3.04
V				R		R	0.080		0.110	2.04	2.79
V						S	0.045		0.055	1.15	1.39
G				J		T	0.235		0.255	5.97	6.47
G				J		U	0.000		0.050	0.00	1.27
		D				U	0.000		0.050	0.00	1.27
		D				V	0.045		±±±	1.15	±±±
	N					Z		±±±	0.080	±±±	2.04
	N					STYLE 1:
						STYLE 1:
						PIN 1.		BASE
							2.	COLLECTOR
							3.	EMITTER
							4.	COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ MJE16204/D

*MJE16204/D*

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