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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ15001/D

Complementary Silicon Power

Transistors

The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications.

High Safe Operating Area (100% Tested) Ð 200 W @ 40 V

50 W @ 100 V

For Low Distortion Complementary Designs

High DC Current Gain Ð

hFE = 25 (Min) @ IC = 4 Adc

NPN

MJ15001

PNP

MJ15002

15 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

140 VOLTS

200 WATTS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CASE 1±07

 

 

 

 

TO±204AA

 

 

 

 

(TO±3)

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

 

Value

 

 

 

Unit

 

 

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

140

 

 

 

Vdc

Collector±Base Voltage

VCBO

140

 

 

 

Vdc

Emitter±Base Voltage

VEBO

5

 

 

 

Vdc

Collector Current Ð Continuous

IC

15

 

 

 

Adc

Base Current Ð Continuous

IB

5

 

 

 

Adc

Emitter Current Ð Continuous

IE

20

 

 

 

Adc

Total Power Dissipation @ TC = 25_C

PD

200

 

 

 

Watts

Derate above 25_C

 

1.14

 

 

 

W/_C

 

 

 

 

 

 

 

 

Operating and Storage Junction Temperature Range

TJ, Tstg

± 65 to +200

 

 

 

_C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

 

Max

 

 

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

RqJC

0.875

 

 

 

_C/W

Maximum Lead Temperature for Soldering Purposes:

TL

265

 

 

 

_C

1/16″ from Case for v 10 seconds

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Motorola, Inc. 1995

MJ15001

MJ15002

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

VCEO(sus)

140

Ð

Vdc

 

(IC, = 200 mAdc, IB = 0)

 

 

 

 

 

Collector Cutoff Current

ICEX

 

 

μAdc

 

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

 

Ð

100

 

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)

 

Ð

2

mAdc

 

Collector Cutoff Current

ICEO

Ð

250

μAdc

 

(VCE = 140 Vdc, IB = 0)

 

 

 

 

 

Emitter Cutoff Current

IEBO

Ð

100

μAdc

 

(VEB = 5 Vdc, IC = 0)

 

 

 

 

 

SECOND BREAKDOWN

 

 

 

 

 

 

 

 

 

 

 

Second Breakdown Collector Current with Base Forward Biased

IS/b

 

 

Adc

 

(VCE = 40 Vdc, t = 1 s (non±repetitive))

 

5

Ð

 

 

(VCE = 100 Vdc, t = 1 s (non±repetitive))

 

0.5

Ð

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

25

150

Ð

 

(IC = 4 Adc, VCE = 2 Vdc)

 

 

 

 

 

Collector±Emitter Saturation Voltage

VCE(sat)

Ð

1

Vdc

 

(IC = 4 Adc, IB = 0.4 Adc)

 

 

 

 

 

Base±Emitter On Voltage

VBE(on)

Ð

2

Vdc

 

(IC = 4 Adc, VCE = 2 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current±Gain Ð Bandwidth Product

fT

2

Ð

MHz

 

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)

 

 

 

 

 

Output Capacitance

Cob

Ð

1000

pF

 

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

 

 

 

 

(1)Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%.

200

(AMP)

 

TC = 25°C

10

 

 

 

CURRENT

7

 

5

 

 

 

 

3

 

COLLECTOR

2

 

0.7

THERMAL LIMITATION (SINGLE PULSE)

 

1

TJ = 200°C

 

BONDING WIRE LIMITED

 

 

,

0.5

 

C

SECOND BREAKDOWN LIMITED

I

 

0.3

CURVES APPLY BELOW RATED VCEO

0.2

2

3

5

7

10

20

30

50

70

100

200

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 1 is based on TJ (pk) = 200_C; TC is variable depending on conditions. At high case temper-

atures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

Figure 1. Active±Region Safe Operating Area

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MJ15001

MJ15002

 

 

 

 

 

 

 

 

 

TYPICAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

(MHz)

10

 

 

 

 

 

 

 

 

 

 

700

 

 

 

Cib

 

 

 

TJ = 25°C

9

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

PRODUCT

 

 

MJ15002 (PNP)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(pF)

300

 

 

 

Cib

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CAPACITANCE

 

 

 

 

 

 

 

 

 

Ð BANDWIDTH

6

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cob

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 10 V

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ftest = 0.5 MHz

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

Cob

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

C,

 

 

 

 

 

 

 

 

 

CURRENT±GAIN

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

MJ15001 (NPN)

 

 

 

 

 

 

 

 

 

 

MJ15001 (NPN)

 

 

2

 

 

 

 

 

 

 

20

 

 

 

 

 

MJ15002 (PNP)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

1.5

2

3

5

7

10

20

30

50 70

100 150

0.1

0.2

0.3

0.5 0.7

1

2

3

5

7

10

 

,

 

 

 

 

 

 

 

 

 

 

 

T

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

f

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 2. Capacitances

Figure 3. Current±Gain Ð Bandwidth Product

 

 

 

 

 

 

MJ15001

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

100

TJ = 100°C

 

 

 

 

 

VCE = 2 Vdc

 

 

25°C

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

GAIN

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

30

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, DC

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

7

 

 

 

 

 

 

 

 

 

 

h

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

2

0.3

0.5

0.7

1

2

3

5

7

10

20

 

0.2

 

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

 

 

 

 

 

 

MJ15002

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

100

 

TJ = 100°C

 

VCE = 2 Vdc

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

70

 

25°C

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

30

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, DC

10

 

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

h

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

2

0.3

0.5

0.7

1

2

3

5

7

10

20

 

0.2

 

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

 

Figure 4. DC Current Gain

 

 

 

 

 

 

MJ15001

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

1.6

 

 

 

 

 

 

 

 

 

 

(VOLTS)

1.2

 

VBE @ VCE = 2 Vdc

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

0.8

TJ = 25°C

 

 

 

 

 

 

 

 

V,

 

 

 

 

 

 

 

 

 

 

 

 

0.4

100°C

 

 

TJ = 100°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE(sat) @ IC/IB = 10

 

 

°

 

 

 

 

 

 

 

 

 

 

 

25 C

 

 

 

 

0

 

 

0.7

1

2

3

5

7

10

20

 

0.2

0.3

0.5

 

 

 

 

 

 

MJ15002

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

1.6

 

 

 

 

 

 

 

 

 

 

(VOLTS)

1.2

 

VBE @ VCE = 2 Vdc

 

 

 

 

 

V, VOLTAGE

 

 

 

 

 

 

 

0.8

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 100°C

 

 

 

 

0.4

 

°

 

 

 

 

 

 

 

100 C

 

 

 

 

 

 

 

 

 

 

VCE(sat) @ IC/IB = 10

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.3

0.5

0.7

1

2

3

5

7

10

20

 

0.2

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

Figure 5. ªOnº Voltages

Motorola Bipolar Power Transistor Device Data

3

MJ15001 MJ15002

PACKAGE DIMENSIONS

 

A

 

 

 

 

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

NOTES:

 

 

 

 

 

C

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

±T±

SEATING

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

E

 

 

PLANE

 

 

3. ALL RULES AND NOTES ASSOCIATED WITH

 

 

 

 

 

 

 

REFERENCED TO±204AA OUTLINE SHALL APPLY.

 

D 2 PL

K

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

0.13 (0.005) M

T

Q

M

Y

M

 

 

DIM

MIN

MAX

MIN

MAX

 

U

 

 

 

 

 

 

A

1.550 REF

39.37 REF

 

±Y±

 

 

 

 

B

±±±

1.050

±±±

26.67

V

L

 

 

 

 

 

 

 

 

 

 

C

0.250

0.335

6.35

8.51

 

2

 

 

 

 

 

 

D

0.038

0.043

0.97

1.09

 

 

B

 

 

 

 

E

0.055

0.070

1.40

1.77

H

G

 

 

 

 

 

G

0.430 BSC

10.92 BSC

1

 

 

 

 

 

 

H

0.215 BSC

5.46 BSC

 

 

 

 

 

 

 

K

0.440

0.480

11.18

12.19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.665 BSC

16.89 BSC

 

±Q±

 

 

 

 

 

 

N

±±±

0.830

±±±

21.08

 

0.13 (0.005) M

T

Y

M

 

 

 

Q

0.151

0.165

3.84

4.19

 

 

 

 

U

1.187 BSC

30.15 BSC

 

 

 

 

 

 

 

 

V

0.131

0.188

3.33

4.77

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

 

 

 

 

 

 

2. EMITTER

 

 

 

 

 

 

 

 

 

 

CASE: COLLECTOR

 

 

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJ15001/D

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