MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP35A/D
Complementary |
Silicon |
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High-Power |
Transistors |
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. . . for general±purpose power amplifier and switching applications. |
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• 25 A Collector Current |
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• Low Leakage Current Ð I CEO = 1.0 mA @ 30 and 60 V |
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• Excellent DC Gain Ð h FE = 40 Typ @ 15 A |
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• High Current Gain Bandwidth Product Ð |
hfe = 3.0 min @ IC = 1.0 A, |
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f = 1.0 MHz |
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MAXIMUM RATINGS |
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TIP35A |
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TIP35B |
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TIP35C |
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Rating |
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Symbol |
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TIP36A |
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TIP36B |
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TIP36C |
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Collector±Emitter Voltage |
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VCEO |
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60 V |
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80 V |
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100 V |
Vdc |
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Collector±Base Voltage |
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VCB |
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60 V |
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80 V |
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100 V |
Vdc |
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Emitter±Base Voltage |
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VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
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IC |
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25 |
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Adc |
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Peak (1) |
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40 |
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Base Current Ð Continuous |
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IB |
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5.0 |
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Adc |
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Total Power Dissipation |
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PD |
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@ TC = 25_C |
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125 |
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Watts |
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Derate above 25_C |
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1.0 |
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W/_C |
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Operating and Storage Junction |
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TJ, Tstg |
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± 65 to + 150 |
_C |
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Temperature Range |
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Unclamped Inductive Load |
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ESB |
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90 |
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mJ |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.0 |
_C/W |
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Junction±To±Free±Air Thermal Resistance |
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RθJA |
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35.7 |
_C/W |
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NPN
TIP35A TIP35B*
TIP35C*
PNP
TIP36A TIP36B* TIP36C*
*Motorola Preferred Device
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 ± 100 VOLTS
125 WATTS
CASE 340D±02
TO±218AC
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%. |
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(WATTS) |
125 |
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100 |
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DISSIPATION |
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75 |
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,POWER |
50 |
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25 |
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D |
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P |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating |
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Preferred devices are Motorola recommended choices for future use and best overall value. |
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REV 1 |
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Motorola, Inc. 1996 |
1 |
Motorola Bipolar Power Transistor Device Data |
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
(IC = 30 mA, IB = 0) |
TIP35A, TIP36A |
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60 |
Ð |
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TIP35B, TIP36B |
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80 |
Ð |
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TIP35C, TIP36C |
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100 |
Ð |
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Collector±Emitter Cutoff Current |
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ICEO |
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mA |
(VCE = 30 V, IB = 0) |
TIP35A, TIP36A |
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Ð |
1.0 |
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(VCE = 60 V, IB = 0) |
TIP35B, TIP35C, TIP36B, TIP36C |
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Ð |
1.0 |
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Collector±Emitter Cutoff Current |
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ICES |
Ð |
0.7 |
mA |
(VCE = Rated VCEO, VEB = 0) |
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Emitter±Base Cutoff Current |
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IEBO |
Ð |
1.0 |
mA |
(VEB = 5.0 V, IC = 0) |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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Ð |
(IC = 1.5 A, VCE = 4.0 V) |
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25 |
Ð |
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(IC = 15 A, VCE = 4.0 V) |
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15 |
75 |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 15 A, IB = 1.5 A) |
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Ð |
1.8 |
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(IC = 25 A, IB = 5.0 A) |
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Ð |
4.0 |
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Base±Emitter On Voltage |
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VBE(on) |
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Vdc |
(IC = 15 A, VCE = 4.0 V) |
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Ð |
2.0 |
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(IC = 25 A, VCE = 4.0 V) |
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Ð |
4.0 |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current Gain |
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hfe |
25 |
Ð |
Ð |
(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) |
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Current±Gain Ð Bandwidth Product |
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fT |
3.0 |
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MHz |
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.
TURN±ON TIME |
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VCC |
± 30 V |
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RL |
3.0 |
+ 2.0 V |
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10 |
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TO SCOPE |
0 |
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tr ≤ 20 ns |
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RB |
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tr ≤ |
±11.0 V |
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20 ns |
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μS |
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10 TO 100 |
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DUTY CYCLE ≈ 2.0% |
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TURN±OFF TIME |
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VCC |
± 30 V |
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RL |
3.0 |
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+ 9.0 V |
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10 |
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TO SCOPE |
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0 |
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tr ≤ 20 ns |
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RB |
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±11.0 V |
≤ 20 ns |
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tr |
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10 to 100 μs |
VBB |
+ 4.0 V |
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DUTY CYCLE ≈ 2.0% |
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FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES.
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2.0 |
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1.0 |
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TJ = 25°C |
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IC/IB = 10 |
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0.7 |
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VCC = 30 V |
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0.5 |
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VBE(off) = 2 V |
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μs) |
0.3 |
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tr |
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t, TIME |
0.2 |
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0.1 |
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td |
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(PNP) |
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(NPN) |
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0.07 |
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0.05 |
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0.03 |
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0.02 |
0.5 |
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2.0 |
3.0 |
5.0 |
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20 |
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0.3 |
0.7 |
1.0 |
7.0 |
10 |
30 |
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IC, COLLECTOR CURRENT (AMPERES)
Figure 2. Switching Time Equivalent Test Circuits |
Figure 3. Turn±On Time |
2 |
Motorola Bipolar Power Transistor Device Data |
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
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10 |
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7.0 |
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(PNP) |
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TJ = 25°C |
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5.0 |
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(NPN) |
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VCC = 30 V |
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3.0 |
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ts |
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IC/IB = 10 |
GAIN |
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2.0 |
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IB1 = IB2 |
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TIMEt, ( μs) |
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DC,CURRENT |
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0.5 |
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tf |
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1.0 |
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ts |
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0.7 |
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FE |
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0.3 |
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h |
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tf |
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0.2 |
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0.1 |
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10 |
20 |
30 |
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0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
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1000 |
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500 |
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VCE = 4.0 V |
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200 |
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TJ = 25°C |
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100 |
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50 |
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20 |
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10 |
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5.0 |
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PNP |
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NPN |
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2.0 |
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1.0 |
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1.0 |
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0.1 |
0.2 |
0.5 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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IC, COLLECTOR CURRENT (AMPERES) |
IC, COLLECTOR CURRENT (AMPS) |
Figure 4. Turn±Off Time |
Figure 5. DC Current Gain |
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC w 25_C. Second breakdown limitations do not derate the same as thermal limitations.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current conditions during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics.
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100 |
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50 |
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300 μs |
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TC = 25°C |
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(AMPS) |
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30 |
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1.0 ms |
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20 |
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CURRENT |
10 |
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10 ms |
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5.0 |
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dc |
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2.0 |
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, COLLECTOR |
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SECONDARY BREAKDOWN |
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1.0 |
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THERMAL LIMIT |
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0.5 |
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BONDING WIRE LIMIT |
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0.3 |
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TIP35A, 36A |
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C |
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I |
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0.2 |
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TIP35B, 36B |
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0 |
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TIP35C, 36C |
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2.0 |
3.0 |
5.0 |
7.0 |
10 |
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30 |
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70 |
100 |
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1.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
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Figure 6. Maximum Rated Forward Bias |
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Safe Operating Area |
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(AMPS) |
40 |
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30 |
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TJ |
≤ 100°C |
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CURRENT |
25 |
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20 |
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COLLECTOR, |
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TIP35C |
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15 |
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TIP35A |
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TIP35B |
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TIP36C |
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10 |
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C |
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TIP36B |
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5.0 |
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TIP36A |
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I |
0 |
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10 |
20 |
30 |
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90 |
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100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 7. Maximum Rated Forward Bias
Safe Operating Area
Motorola Bipolar Power Transistor Device Data |
3 |
TIP35A |
TIP35B |
TIP35C |
TIP36A TIP36B TIP36C |
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TEST CIRCUIT |
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VCE MONITOR |
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L1 |
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RBB1 |
(SEE NOTE A) |
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MJE180 |
TUT |
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20 |
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INPUT |
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L2 |
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50 |
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(SEE NOTE A) |
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50 |
RBB2 = 100 |
± |
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VCC = 10 V |
IC MONITOR |
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+ |
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VBB2 = 0 |
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± |
RS = 0.1 Ω |
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VBB1 = 10 V |
+ |
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VOLTAGE AND CURRENT WAVEFORMS
tw = 6.0 ms
(SEE NOTE B)
5.0 V
INPUT
VOLTAGE
0
100 ms
0
COLLECTOR
CURRENT
± 3.0 A
0
±10 V
COLLECTOR
VOLTAGE
V(BR)CER
NOTES:
A.L1 and L2 are 10 mH, 0.11 Ω, Chicago Standard Transformer Corporation C±2688, or equivalent.
B.Input pulse width is increased until ICM = ± 3.0 A.
C.For NPN, reverse all polarities.
Figure 8. Inductive Load Switching
4 |
Motorola Bipolar Power Transistor Device Data |
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
PACKAGE DIMENSIONS
C 
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B |
Q E |
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U |
4 |
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S |
L |
A |
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K |
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1 2 |
3 |
D J 
H
V
G 
CASE 340D±02
ISSUE B
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETER.
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MILLIMETERS |
INCHES |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
±±± |
20.35 |
±±± |
0.801 |
B |
14.70 |
15.20 |
0.579 |
0.598 |
C |
4.70 |
4.90 |
0.185 |
0.193 |
D |
1.10 |
1.30 |
0.043 |
0.051 |
E |
1.17 |
1.37 |
0.046 |
0.054 |
G |
5.40 |
5.55 |
0.213 |
0.219 |
H |
2.00 |
3.00 |
0.079 |
0.118 |
J |
0.50 |
0.78 |
0.020 |
0.031 |
K |
31.00 REF |
1.220 REF |
||
L |
±±± |
16.20 |
±±± |
0.638 |
Q |
4.00 |
4.10 |
0.158 |
0.161 |
S |
17.80 |
18.20 |
0.701 |
0.717 |
U |
4.00 REF |
0.157 REF |
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V |
1.75 REF |
0.069 |
||
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
Motorola Bipolar Power Transistor Device Data |
5 |
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
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How to reach us: |
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USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; |
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6 |
◊ |
Motorola Bipolar Power Transistor Device Data |
|
TIP35/D |
*TIP35/D*