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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJ13333/D

MJ13333

Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Transistor

The MJ13333 transistor is designed for high voltage, high±speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:

• Switching Regulators

• Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

Fast Turn Off Times

200 ns Inductive Fall Time Ð 25 _C (Typ) 1.8 μs Inductive Storage Time Ð 25 _C (Typ)

Operating Temperature Range ±65 to +200_C

100_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

20 AMPERE

NPN SILICON

POWER TRANSISTORS

400±500 VOLTS

175 WATTS

CASE 1±07 TO±204AA (TO±3)

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	400	Vdc
Collector±Emitter voltage	VCEV	700	Vdc
Emitter Base Voltage	VEB	6.0	Vdc
Collector Current Ð Continuous	IC	20	Adc
Peak (1)	ICM	30
Base Current Ð Continuous	IB	10	Adc
Peak (1)	IBM	15
Total Power Dissipation @ TC = 25_C	PD	175	Watts
@ TC = 100_C		100
Derate above 25_C		1.0	W/_C

Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.0	_C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds	TL	275	_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v10%.

(1) Similar device types available with lower VCEO ratings, see the MJ13330 (200 V) and MJ13331 (250 V).

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

REV 1

Motorola, Inc. 1995

MJ13333

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (Table 1)		VCEO(sus)	400	Ð	Ð	Vdc
(IC = 100 mA, IB = 0)
Collector Cutoff Current		ICEV				mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)			Ð	Ð	0.25
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)			Ð	Ð	5.0
Collector Cutoff Current		ICER	Ð	Ð	5.0	mAdc
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
Emitter Cutoff Current		IEBO	Ð	Ð	1.0	mAdc
(VEB = 6.0 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased		IS/b		See Figure 12
Clamped Inductive SOA with Base Reverse Biased		RBSOA		See Figure 13

ON CHARACTERISTICS (1)

DC Current Gain		hFE	10	Ð	60	Ð
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector±Emitter Saturation Voltage		VCE(sat)				Vdc
(IC = 10 Adc, IB = 2.0 Adc)			Ð	Ð	1.8
(IC = 20 Adc, IB = 6.7 Adc)			Ð	Ð	5.0
(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)			Ð	Ð	2.4
Base Emitter Saturation Voltage		VBE(sat)				Vdc
(IC = 10 Adc, IB = 2.0 Adc)			Ð	Ð	1.8
(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C)			Ð	Ð	1.8
DYNAMIC CHARACTERISTICS

Output Capacitance		Cob	125	Ð	500	pF
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time		td	Ð	0.02	0.1	μs
Rise Time	(VCC = 250 Vdc, IC = 10 A,	t	Ð	0.3	0.7	μs
	IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 μs,	r
Storage Time	IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 μs,	ts	Ð	1.6	4.0	μs
Storage Time	Duty Cycle v 2.0%)	ts	Ð	1.6	4.0	μs
Fall Time		tf	Ð	0.3	0.7	μs
Inductive Load, Clamped (Table 1)

Storage Time	(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,	tsv	Ð	2.5	5.0	μs
Crossover Time	VBE(off) = 5 Vdc, TC = 100°C)	tc	Ð	0.8	2.0	μs
Storage Time	(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,	tsv	Ð	1.8	Ð	μs
Crossover Time	(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A,	tc	Ð	0.4	Ð	μs
Crossover Time	VBE(off) = 5 Vdc, TC = 25_C)	tc	Ð	0.4	Ð	μs
Fall Time		tfi	Ð	0.2	Ð	μs

(1) Pulse Test: PW = 300 μs, Duty Cycle v 2%.

2	Motorola Bipolar Power Transistor Device Data

															MJ13333
	100						(VOLTS)	2.0
				150°C			(VOLTS)
	50			150°C			VOLTAGE	1.6
CURRENT GAIN								1.6

								1.2		1 A			5 A		10 A
								1.2
	20			25°C
	20
								0.8
, DC							COLLECTOR±EMITTER	0.8
, DC				VCE = 5 V
FE	10			VCE = 5 V
h	10							0.4
								0.4

							,
	5.0						CE	0
	5.0	0.5	1.0	2.0	5.0	10	V	0	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10
	0.2	0.5	1.0	2.0	5.0	10	20	0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10
			IC, COLLECTOR CURRENT (AMPS)								IB, BASE CURRENT (AMP)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

(VOLTS)	2.0
(VOLTS)				IC/IB = 5
VOLTAGE	1.6
VOLTAGE	1.2
COLLECTOR±EMITTER	1.2
	0.8
	0.4			25°C
				25°C
,
CE	0			150°C
V	0						20
	0.2	0.5	1.0	2.0	5.0	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 3. Collector±Emitter Saturation Region

	104
μA)	103
(
CURRENT		TJ = 150°C
CURRENT	102	125°C
,COLLECTOR	101	100°C
	101	75°C
		75°C
	0	REVERSE		FORWARD
C	0
I	10	25°C			VCE = 250 V
		25°C			VCE = 250 V
	10±1	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
	± 0.4	± 0.2	0	+ 0.2	+ 0.4	+ 0.6
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

(VOLTS)	2.0
VOLTAGE	2.0
				IC/IB = 5
	1.6

SATURATION	1.2
				25°C

, BASE±EMITTER	0.8
	0.4			150°C
	0.4

BE(sat)	0	0.5	1.0	2.0	5.0	10	20
BE(sat)	0.2	0.5	1.0	2.0	5.0	10	20
V			IC, COLLECTOR CURRENT (AMP)
			IC, COLLECTOR CURRENT (AMP)

Figure 4. Base±Emitter Voltage

	3000
	2000
				Cib
(pF)	1000
(pF)	700
C, CAPACITANCE	700
	500
	200
						Cob
	100
	50
	30	0.5	1.0	5.0	10	50	100	500	1000
	0.1	0.5	1.0	5.0	10	50	100	500	1000

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

MJ13333
		IC pk		Vclamp
				Vclamp
		90% Vclamp	90% IC
IC	tsv	trv	tfi		tti
			tc
VCE		10% Vclamp		10%	2% IC
I	90% I			I pk	2% IC
B	B1			C
		TIME

Figure 7. Inductive Switching Measurements

C = 10

(AMP)

B1 = 2

Vclamp

= 250

CURRENTBASE,

7.0

TJ = 25

°C

5.0

B2(pk)

2.0

5.0

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 8. Reverse Base Current versus VBE(off) With No External Base Resistance

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 ± 90% Vclamp

tfi = Current Fall Time, 90 ± 10% IC tti = Current Tail, 10 ± 2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN±222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers, However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100°C.

RESISTIVE SWITCHING PERFORMANCE

	2.0
	1.0			VCC = 250 V
				VCC = 250 V
	0.5			IC/IB = 5			tr
	0.5
μs)
(
t, TIME	0.2
t, TIME	0.1
	0.1
	0.05
				td
	0.02	0.5	1.0	2.0	5.0	10	20
	0.2	0.5	1.0	2.0	5.0	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 9. Turn±On Switching Times

	5.0
	2.0				ts
	2.0
μs)	1.0
μs)
(
TIME	0.5							tf
TIME								tf
t,		VCE = 250 V
	0.2	VCE = 250 V
	0.2	IC/IB = 5
	0.1	VBE(off) = 5 V
	0.1
	0.05	0.2	0.5	1.0	2.0	5.0	10	20
		0.2	0.5	1.0	2.0	5.0	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 10. Turn±Off Switching Times

4	Motorola Bipolar Power Transistor Device Data

MJ13333

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE SWITCHING

+15 V

250 μF

470 Ω

47 Ω

2 W

15 V

TURN±ON TIME

+10 V

330 Ω

INPUT CONDITIONS

IB1

5.1 Ω

5 W

IB1 adjusted to

obtain the forced

50 Ω

100 Ω

hFE desired

PW Varied to Attain

TURN±OFF TIME

IC = 100 mA

39 Ω

Use inductive switching

430 Ω

driver as the input to

All Diodes Ð 1N4934

± 5.2

the resistive test circuit.

All NPN Ð MJE200

250 μF

All PNP Ð MJE210

Adjust R1 to obtain IB1

For switching and RBSOA, R2 = 0

For VCEO(sus), R2 = ∞

CIRCUIT VALUES

Lcoil = 80 mH, VCC = 10 V

Lcoil

= 180 μH

Vclamp

= 250 V

VCC = 250 V

Rcoil

= 0.05 Ω

RL = 50 Ω

Rcoil = 0.7 Ω

RB adjusted to attain desired IB1

VCC

= 20 V

Pulse Width = 10 μs

INDUCTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

t1 Adjusted to

RESISTIVE TEST CIRCUIT

CIRCUITS

Obtain IC

1 TUT

Rcoil

IC(pk)

t Clamped

≈

Lcoil (ICpk)

TUT

1N4937

VCC

INPUT

Lcoil

coil

)

VCC

TEST

SEE ABOVE FOR

EQUIVALENT

≈

Cpk

Vclamp

VCE

VClamp

DETAILED CONDITIONS

VCC

VCE or

RS =

Test Equipment

Vclamp

Scope Ð Tektronix

0.1 Ω

TIME

475 or Equivalent

		1
EFFECTIVE TRANSIENT THERMAL		0.7	D = 0.5
		0.5	D = 0.5
	RESISTANCE (NORMALIZED)	0.5
		0.3	0.2
		0.2	0.1
			0.1													P(pk)
		0.1	0.05								RθJC(t) = r(t) RθJC					P(pk)
		0.07	0.05								RθJC = 1.0°C/W MAX
		0.07	0.02								RθJC = 1.0°C/W MAX
		0.05	0.02								D CURVES APPLY FOR POWER
		0.05									PULSE TRAIN SHOWN						t1
					0.01						PULSE TRAIN SHOWN						t1
		0.03			0.01						READ TIME AT t1						t2
		0.03									READ TIME AT t1						t2
		0.02	SINGLE PULSE								TJ(pk) ± TC = P(pk) RθJC(t)
r(t),		0.02	SINGLE PULSE								TJ(pk) ± TC = P(pk) RθJC(t)						DUTY CYCLE, D = t1/t2
r(t),																	DUTY CYCLE, D = t1/t2
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500	1000
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500	1000

t, TIME (ms)

Figure 11. Thermal Response

Motorola Bipolar Power Transistor Device Data

MJ13333

	50		10 μs
	20		10 μs
	20	100	μs
(AMP)	5	100	μs
CURRENT	10
CURRENT	2	dc	1 ms
	2

COLLECTOR,	1
COLLECTOR,	0.2	BONDING WIRE LIMIT
	0.2
	0.1
	0.1	THERMAL LIMIT @ TC = 25°C
	0.05	THERMAL LIMIT @ TC = 25°C
	0.05	(SINGLE PULSE)
C	0.02	SECOND BREAKDOWN LIMIT
I	0.02	MJ13333
	0.01	MJ13333
	0.01
	0.005

	6	10				20	50	100	200	350 450 600
			V , COLLECTOR±EMITTER VOLTAGE (VOLTS) 400 500
				CE
		Figure 12. Forward Bias Safe Operating Area
(AMPS)	20
	20


CURRENT	16
	16
COLLECTOR	12


	8.0

PEAK,				IC/IB	≥	5
				IC/IB	≥	5
	4.0			VBE(off) = 5 V
C(pk)				TJ = 100°C
C(pk)
I	0

		100				200	300	400	500	600
		100				200	300	400	500	600

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 13. RBSOA, Reverse Bias Switching

Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 12 is based on TC = 25_C. TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14.

TJ(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current condition allowable during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the complete RBSOA characteristics.

	100
(%)				FORWARD BIAS
(%)	80			SECOND BREAKDOWN
FACTOR	80			DERATING
				DERATING
	60
DERATING	60
			THERMAL
	40		DERATING

POWER	20
	0	40	80	120	160	200
	0	40	80	120	160	200
			TC, CASE TEMPERATURE (°C)

Figure 14. Power Derating

6	Motorola Bipolar Power Transistor Device Data

MJ13333

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola Bipolar Power Transistor Device Data

MJ13333

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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