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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUT34/D

Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode

The BUT34 Darlington transistor is designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line±operated SWITCHMODE applications such as:

•AC and DC Motor Controls

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Fast Turn±Off Times

0.7μs Inductive Fall Time at 25_C (Typ)

1.8μs Inductive Storage Time at 25_C (Typ)

•Operating Temperature Range ±65 to 200_C

≈ 50

≈ 8

BUT34

50 AMPERES

NPN SILICON

POWER DARLINGTON

TRANSISTOR

850 VOLTS

250 WATTS

CASE 197A±05

TO±204AE

(TO±3)

MAXIMUM RATINGS

Rating	Symbol	BUT34	Unit

Collector±Emitter Voltage	VCEO(sus)	500	Vdc
Collector±Emitter Voltage	VCEV	850	Vdc
Emitter±Base Voltage	VEB	10	Vdc
Collector Current Ð Continuous	IC	50	Adc
Collector Current Ð Peak (1)	ICM	75
Base Current Ð Continuous	IB	10	Adc
Base Current Ð Peak (1)	IBM	15
Free Wheel Diode Forward Current Ð Continuous	IF	50	Adc
Free Wheel Diode Forward Current Ð Peak	IFM	75
Total Power Dissipation @ TC = 25_C	PD	250	Watts
@ TC = 100_C		140
Derate above 25_C			_
			W/ C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	0.7	_C/W
Maximum Lead Temperature for Soldering Purpose:	TL	275	_C
1/8″ from Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x10%.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

REV 7

Motorola, Inc. 1995

BUT34

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (Table 1)			VCEO(sus)	500	Ð	Ð	Vdc
(IC = 100 mA, IB = 0)
Collector Cutoff Current			ICEV				mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)				Ð	Ð	0.2
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)				Ð	Ð	4.0
Emitter Cutoff Current			IEBO	Ð	Ð	350	mAdc
(VEB = 2.0 V, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased			IS/b		See Figure 16
Clamped Inductive SOA with Base Reverse Biased			RBSOA		See Figure 17

ON CHARACTERISTICS (1)

DC Current Gain			hFE
(IC = 16 A, VCE = 5 V)				30	Ð	Ð
(IC = 32 A, VCE = 5 V)				15	Ð	Ð
Collector±Emitter Saturation Voltage			VCE(sat)				Vdc
(IC = 16 A, IB = 0.8 A)				Ð	Ð	2.0
(IC = 32 A, IB = 3.2 A)				Ð	Ð	3.0
(IC = 40 A, IB = 4 A)				Ð	Ð	3.5
(IC = 50 A, IB = 10 A)				Ð	Ð	5.0
Base±Emitter Saturation Voltage			VBE(sat)				Vdc
(IC = 16 A, IB = 0.8 A)				Ð	Ð	2.5
(IC = 32 A, IB = 3.2 A)				Ð	Ð	2.9
(IC = 40 A, IB = 4 A)				Ð	Ð	3.3
Diode Forward Voltage			Vf	Ð	Ð	4.0	Vdc
(IF = 40 A)
SWITCHING CHARACTERISTICS
Inductive Load, Clamped (Table 1)

Storage Time	TC = 25_C	See Table 1	ts	Ð	1.8	3.0	μs
Fall Time		IC = 32 A	tf	Ð	0.7	1.5	μs
Storage Time	TC = 100_C	IB1 = 3.2 A	ts	Ð	2.2	Ð	μs
Fall Time		VBE(off) = 5 V	tf	Ð	0.8	Ð	μs

(1) Pulse Test: PW = 300 μs, Duty Cycle x 2%.

2	Motorola Bipolar Power Transistor Device Data

																			BUT34
							TYPICAL CHARACTERISTICS
	400										(VOLTS)
	200										(VOLTS)
CURRENT GAIN	100										VOLTAGE	4
	100
	50											3
	30											3
	30
	20																		IC = 40 A
												2							IC = 40 A
, DC	10										COLLECTOR±EMITTER	2
	10																IC = 20 A
																	IC = 20 A
FE	5
h	5											1	TC = 25°C
	3	TC = 25°C										1	TC = 25°C
	2	TC = 25°C
		VCE = 5.0 V									,
		VCE = 5.0 V									CE
	1										CE	0
	1	2	3	4	7	10	20	30	40	60	V	0	0.2	0.3	0.5	1	2	3	5	7	10
	1	2	3	4	7	10	20	30	40	60		0.1	0.2	0.3	0.5	1	2	3	5	7	10
			IC, COLLECTOR CURRENT (AMPS)												IB, BASE CURRENT (AMPS)

Figure 1. DC Current Gain

Figure 2. Collector Saturation Region

(VOLTS)	2.5	TC = 25°C
VOLTAGE	2.2	IC/IB = 10
	2.2
	1.9
COLLECTOR±EMITTER	1.9
	1.6
	1.3		40°C
	1.0		40°C
	1.0	25°C
		25°C
	0.7	100°C
,
CE
CE	0.4
V	0.4	2	3	5	7	10	20	30	50
	1	2	3	5	7	10	20	30	50
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

(VOLTS)	3.2	TC = 25°C
	3.2	IC/IB = 10
		IC/IB = 10
VOLTAGE	2.8
	2.5

, BASE±EMITTER	2.2
	1.9
	1.6	25°C
BE	1.3
V	1.3	100°C
	1.0	100°C
	1.0	2	3	5	7	10	20	30	50
	1	2	3	5	7	10	20	30	50

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base±Emitter Voltage

		1
EFFECTIVE TRANSIENT THERMAL		0.7	D = 0.5
		0.5	D = 0.5
	RESISTANCE (NORMALIZED)	0.5
		0.3	0.2
		0.2	0.2
		0.2															P(pk)
			0.1									RθJC(t) = r(t) RθJC					P(pk)
		0.1	0.05										°
			0.05									RθJC = 1.17 C/W MAX
		0.07	0.02									D CURVES APPLY FOR POWER
		0.05	0.02									PULSE TRAIN SHOWN					t1
		0.05										PULSE TRAIN SHOWN					t1	t
												READ TIME AT t1						t
		0.03		0.01								TJ(pk)	± TC = P(pk) RθJC(t)					2
		0.03		0.01													DUTY CYCLE, D = t1/t2
		0.02	SINGLE PULSE														DUTY CYCLE, D = t1/t2
r(t),		0.02	SINGLE PULSE
r(t),
		0.01
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500	100
										t, TIME (ms)											0

Figure 5. Thermal Response

Motorola Bipolar Power Transistor Device Data

BUT34

Table 1. Test Conditions for Dynamic Performance

INPUT CONDITIONS

VALUES

CIRCUIT TEST CIRCUITS

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

TEST CIRCUIT

for

+10 V

FREE±WHEEL

20 Ω

22 μF

DIODE

2N6438

2 W

160

5 V

MR854

220

100

MM3735

680 pF

Ib1 ADJUST

D1 D2 D3 D4

1N4934

μF

ADJUST

DRIVER

PULSES

680 pF

PW Varied to Attain

dTb ADJUST

δ = 3%

2N3763

IC = 100 mA

680 pF

100

MR854

160

2N6339

Lcoil = 10 mH, VCC = 10 V

Lcoil = 180 μH

2 W

22 μF

VCC

coil

= 0.7 Ω

coil

= 0.05 Ω

Vclamp = VCEO(sus)

VCC = 10 V

up to

INDUCTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

t1 Adjusted to

50 V

TUT

tf Clamped

Obtain IC

Rcoil

ICM

Lcoil (ICM)

1N4937

t1 [

CRONETICS

510

PG130

INPUT

Lcoil

Lcoil (ICM)

up to

SEE ABOVE FOR

EQUIVALENT

VCE V

t2 [

50 V

5 μs

DETAILED CONDITIONS

clamp

CEM

Vclamp

RS =

TIME

Test Equipment

0.1 Ω

Scope Ð Tektronix

475 or Equivalent

t, TIME ( μs)

0.5

0.3

0.2

0.1

										5		σ tF = 200 ns
								°		4		σ tF = 200 ns
							TC = 25 C			3	IC = 16 A	σ t	= 400 ns		tS
							IC/IB = 5					S				VBE(off) = 5 V
							IC/IB = 5			2						VBE(off) = 5 V
										2
									μs)	1						10 V
									μs)	1
									t, TIME (	0.5					VBE(off) = 5 V
IC = 50 A			IC = 25 A							0.3
IC = 50 A			IC = 25 A							0.2						10 V	IC/IB = 10
										0.2						10 V	IC/IB = 10
																tF	TC = 25°C
										0.1						tF	IC/IB = 20
1	2	3	4	5	6	7	8	9	10	0.1	2	3	5	7	10	20	30	50
1	2	3	4	5	6	7	8	9	10	1	2	3	5	7	10	20	30	50
				Ib2/Ib1								IC, COLLECTOR CURRENT (AMPS)

	Figure 6. Fall Time versus IB2/IB1												Figure 7. Turn±Off Time versus IC
											10
											8
							IC = 25 A				6
							IC = 25 A				5
										μs)	5
										μs)	4
											4
										(				IC = 25 A
							IC = 50 A			TIMEt,	3			IC = 25 A
							IC = 50 A			TIMEt,

											2	IC = 50 A
TC = 25°C												IC = 50 A							TC = 25°C
TC = 25°C																			TC = 25°C
VBE(off) = 5 V																			IC/IB = 5
1	2	3	4	5	6	7	8	9	10		1	1	2	3	4	5	6	7	8	9	10
1	2	3	4	5	6	7	8	9	10			1	2	3	4	5	6	7	8	9	10
			βf, FORCED GAIN													Ib2/Ib1
Figure 8. Storage Time versus Forced Gain													Figure 9. Storage Time versus Ib2/Ib1

4	Motorola Bipolar Power Transistor Device Data

BUT34

FREE±WHEEL DIODE CHARACTERISTICS

		I
		di/dt = 25 A/μs
		IFM		(AMPS)
		25 IRM		(AMPS)
		25 IRM
1	Id	trr	t	CURRENT
		IRM		EMITTER,
0				EMITTER,
VD	DYN
	10 (VDYN VFM)
	VFM			E
	VFM			I
	TFR

Figure 10. Free Wheel Diode Measurements

±σ + σ

10				TC = 25°C
0	1	2	3	4	5
0

VEC, EMITTER COLLECTOR VOLTAGE (VOLTS)

Figure 11. Forward Voltage

(VOLTS)VOLTAGEMODULATIONFORWARD,	30						(AMPS)CURRENTRECOVERYREVERSEPEAK	50
	30							50
	25								TC = 25°C
	25							40
								40
	20
								30
	15
								20
	10
	5		°		°			10
dyn			40 C		TC = 25 C		RM
dyn	0						RM	0
							,
V	0	10	20	30	40	50	I	0	10	20	30	40	50
	0	10	20	30	40	50		0	10	20	30	40	50
			IE, EMITTER CURRENT (AMPS)							IE, EMITTER CURREMT (AMPS)

Figure 12. Forward Modulation Voltage

Figure 13. Peak Reverse Recovery Current

( μs)	2.2	TC = 25°C
TIME	2.0
RECOVERY	1.8
	1.6

, FORWARD	1.4
	1.2

FR	1.0
T	1.0
	0.8	10	20	30	40	50
	0	10	20	30	40	50

IE, EMITTER CURRENT (AMPS)

	15
μs)	10	TC = 25°C
(	7
TIME	7
TIME	5
RECOVERY	5
	3
	2

, REVERSE	0.1
, REVERSE	0.7
RR	0.5
T	0.5
	0.3	10	20	30	40	50
	0	10	20	30	40	50
			IE, EMITTER CURRENT (AMPS)

Figure 14. Forward Recovery Time

Figure 15. Reverse Recovery Time

Motorola Bipolar Power Transistor Device Data

BUT34

The Safe Operating Area figures shown in Figures 16 and 17 are specifed for these devices under the test conditions shown.

	60						10 μs
	30			DC			10 μs
(AMPS)	30			DC	100	μs
					1 ms
	10
CURRENT	10
CURRENT	3.0
,COLLECTOR	1.0
	0.5
	0.3
C	0.3	TC = 25°C
I

	0.1	5	10	30	100	300	1000
	1	5	10	30	100	300	1000
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 16. Safe Operating Area

(AMPS)	60
(AMPS)
CURRENT	40
	40
COLLECTOR	20
PEAK,		IC/IB = 10
		TC = 25°C
CM					V	BE(off)	= 5 V
I						BE(off)
	0	200	400	600	850
	0	200	400	600	850

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 17. Reverse Bias Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subject to greater dissipation than the curves indicate.

The data of Figure 16 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC y 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 17 gives the RBSOA characteristics.

	100
(FACTOR)	80			SECOND BREAKDOWN
	80				DERATING
					DERATING
	60
DERATING	60
			THERMAL
	40		DERATING
	40
POWER	20
	20
	0	40	80	120	160	200
	0	40	80	120	160	200
			IC, CASE TEMPERATURE (°C)

Figure 18. Power Derating

6	Motorola Bipolar Power Transistor Device Data

BUT34

PACKAGE DIMENSIONS

±T±

SEATING

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

PLANE

Y14.5M, 1982.

D 2 PL

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

0.30 (0.012) M

DIM

MIN

MAX

MIN

MAX

1.530 REF

38.86 REF

±Y±

0.990

1.050

25.15

26.67

0.250

0.335

6.35

8.51

0.057

0.063

1.45

1.60

0.060

0.070

1.53

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

0.760

0.830

19.31

21.08

0.25 (0.010) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 197A±05

TO±204AE (TO±3)

ISSUE J

Motorola Bipolar Power Transistor Device Data

BUT34

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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