Добавил:
Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:

motorola / Bipolar / MJE171RE

.PDF
Источник:
Скачиваний:
2
Добавлен:
06.01.2022
Размер:
176.66 Кб
Скачать

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE171/D

Complementary Plastic Silicon Power Transistors

. . . designed for low power audio amplifier and low current, high speed switching applications.

Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 60 Vdc Ð MJE171, MJE181

VCEO(sus) = 80 Vdc Ð MJE172, MJE182

DC Current Gain Ð

hFE = 30 (Min) @ IC = 0.5 Adc

hFE = 12 (Min) @ IC = 1.5 Adc

Current±Gain Ð Bandwidth Product Ð

fT = 50 MHz (Min) @ IC = 100 mAdc

Annular Construction for Low Leakages Ð

ICBO = 100 nA (Max) @ Rated VCB

MAXIMUM RATINGS

 

 

MJE171

 

MJE172

 

Rating

Symbol

MJE181

 

MJE182

Unit

 

 

 

 

 

 

Collector±Base Voltage

VCB

80

 

100

Vdc

Collector±Emitter Voltage

VCEO

60

 

80

Vdc

Emitter±Base Voltage

VEB

 

7.0

Vdc

Collector Current Ð Continuous

IC

 

3.0

Adc

Peak

 

 

6.0

 

 

 

 

 

 

Base Current

IB

 

1.0

Adc

Total Power Dissipation @ TA = 25_C

PD

 

1.5

Watts

Derate above 25_C

 

0.012

W/_C

 

 

 

 

Total Power Dissipation @ TC = 25_C

PD

12.5

Watts

Derate above 25_C

 

 

0.1

W/_C

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 65 to +150

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

θJC

10

_C/W

Thermal Resistance, Junction to Ambient

θJA

83.4

_C/W

PNP

MJE171* MJE172*

NPN

MJE181* MJE182*

*Motorola Preferred Device

3 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

60 ± 80 VOLTS

12.5 WATTS

CASE 77±08

TO±225AA

 

TA

TC

 

 

 

 

 

 

 

 

2.8

14

 

 

 

 

 

 

 

(WATTS)

2.4

12

 

 

 

 

 

 

 

2.0

10

 

 

 

 

 

 

 

DISSIPATION

1.6

8.0

 

 

TC

 

 

 

 

1.2

6.0

 

 

 

 

 

 

 

, POWER

0.8

4.0

 

 

TA

 

 

 

 

 

 

 

 

 

 

 

 

 

D

0.4

2.0

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

0

0

40

60

80

100

120

140

160

 

 

20

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1995

MJE171

MJE172

MJE181

MJE182

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

 

VCEO(sus)

 

 

Vdc

 

(IC = 10 mAdc, IB = 0)

 

MJE171, MJE181

 

60

Ð

 

 

 

 

 

MJE172, MJE182

 

80

Ð

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

ICBO

Ð

0.1

μAdc

 

(VCB = 80 Vdc, IE = 0)

 

MJE171, MJE181

 

 

 

(VCB = 100 Vdc, IE = 0)

 

MJE172, MJE182

 

Ð

0.1

mAdc

 

(VCB = 80 Vdc, IE = 0, TC = 150_C)

MJE171, MJE181

 

Ð

0.1

 

(VCB = 100 Vdc, IE = 0, TC = 150_C)

MJE172, MJE182

 

Ð

0.1

 

 

Emitter Cutoff Current

 

 

IEBO

Ð

0.1

μAdc

 

(VBE = 7.0 Vdc, IC = 0)

 

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

hFE

 

 

Ð

 

(IC = 100 mAdc, VCE = 1.0 Vdc)

 

 

50

250

 

 

(IC = 500 mAdc, VCE = 1.0 Vdc)

 

 

30

Ð

 

 

(IC = 1.5 Adc, VCE = 1.0 Vdc)

 

 

12

Ð

 

 

Collector±Emitter Saturation Voltage

 

VCE(sat)

 

 

Vdc

 

 

 

 

 

(IC = 500 mAdc, IB = 50 mAdc)

 

 

Ð

0.3

 

 

(IC = 1.5 Adc, IB = 150 mAdc)

 

 

Ð

0.9

 

 

(IC = 3.0 Adc, IB = 600 mAdc)

 

 

Ð

1.7

 

 

Base±Emitter Saturation Voltage

 

VBE(sat)

 

 

Vdc

 

(IC = 1.5 Adc, IB = 150 mAdc)

 

 

Ð

1.5

 

 

(IC = 3.0 Adc, IB = 600 mAdc)

 

 

Ð

2.0

 

 

Base±Emitter On Voltage

 

 

VBE(on)

Ð

1.2

Vdc

 

(IC = 500 mAdc, VCE = 1.0 Vdc)

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Current±Gain Ð Bandwidth Product (1)

 

fT

50

Ð

MHz

 

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

 

 

 

 

 

Output Capacitance

 

 

Cob

 

 

pF

 

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJE171/MJE172

 

Ð

60

 

 

 

 

 

MJE181/MJE182

 

Ð

40

 

 

 

 

 

 

 

 

 

 

(1) fT = hfeftest.

 

 

VCC

 

 

 

 

 

 

 

 

 

 

 

 

 

+ 30 V

1K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

VCE = 30 V

 

 

 

 

 

 

R

300

 

 

 

IC/IB = 10

 

 

 

 

 

 

25 μs

C

 

tr

 

VBE(off) = 4.0 V

 

 

 

 

+11 V

SCOPE

200

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

RB

100

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

(ns)

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

± 9.0 V

51

D1

30

 

td

 

 

 

 

 

 

 

 

tr, tf 10 ns

TIMEt,

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 4 V

10

 

 

 

 

 

 

 

 

 

 

DUTY CYCLE = 1.0%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

5

NPN MJE181/182

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

D1 MUST BE FAST RECOVERY TYPE, e.g.:

2

PNP MJE171/172

 

 

 

 

 

 

 

 

 

1N5825 USED ABOVE IB 100 mA

1

 

 

 

 

 

 

 

 

 

 

 

MSD6100 USED BELOW IB 100 mA

0.02 0.03 0.05

 

 

 

 

1

2

3

5

 

 

0.01

0.1

0.2

0.3

0.5

10

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

 

 

 

 

 

 

 

Figure 2. Switching Time Test Circuit

Figure 3. Turn±On Time

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

MJE171

MJE172

MJE181

MJE182

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

D = 0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

RESISTANCE (NORMALIZED)

 

 

 

 

 

 

 

 

 

 

 

 

r(t), TRANSIENT THERMAL

0.3

0.2

 

 

 

 

 

 

 

 

 

 

 

0.2

0.1

 

 

 

 

θJC(t) = r(t) θJC

 

P(pk)

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.05

 

 

 

 

θJC = 10°C/W MAX

 

 

 

 

 

 

 

 

 

 

D CURVES APPLY FOR POWER

 

 

 

 

0.07

 

 

 

 

 

 

 

 

 

0.01

0.02

 

 

 

PULSE TRAIN SHOWN

 

t1

 

 

 

0.05

 

 

 

 

READ TIME AT t1

 

t

 

 

 

 

 

 

 

 

TJ(pk) ± TC = P(pk) θJC(t)

 

2

 

 

0.03

0 (SINGLE PULSE)

 

 

 

DUTY CYCLE, D = t1/t2

 

 

 

 

 

 

 

 

 

 

0.02

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

 

 

0.02

t, TIME (ms)

Figure 4. Thermal Response

ACTIVE±REGION SAFE OPERATING AREA

 

10

 

 

 

 

 

 

 

 

(AMP)

5.0

 

 

 

 

 

100 μs

 

 

2.0

 

 

 

 

 

 

 

500 μs

CURRENT

1.0

 

 

dc

 

 

 

 

 

0.5

 

TJ = 150°C

 

5.0 ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR

0.2

 

BONDING WIRE LIMITED

 

 

 

 

 

THERMALLY LIMITED @

 

 

 

 

0.1

 

 

 

 

 

 

TC = 25°C (SINGLE PULSE)

 

 

 

0.05

 

SECOND BREAKDOWN LIMITED

 

 

 

,

 

 

CURVES APPLY BELOW

 

 

 

 

C

 

 

 

 

 

 

I

 

 

 

 

 

 

 

0.02

 

RATED VCEO

 

MJE171

 

 

 

0.01

 

 

 

 

MJE172

 

 

 

2.0

3.0

5.0

10

20

30

50

100

 

1.0

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. MJE171, MJE172

There are two limitations on the power handling ability of a transistor Ð a verage junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC

 

10

 

 

 

 

 

 

 

 

 

 

(AMP)

5.0

 

 

 

 

 

 

100 μs

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

500 μs

 

CURRENT

1.0

 

 

 

 

 

 

 

 

 

 

5.0 ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dc

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

TJ = 150°C

 

 

 

 

 

 

 

COLLECTOR,

0.05

 

 

 

 

 

 

 

 

 

SECOND BREAKDOWN LIMITED

 

 

 

 

0.2

 

BONDING WIRE LIMITED

 

 

 

 

 

 

0.1

 

THERMALLY LIMITED @

 

 

 

 

 

 

 

TC = 25°C (SINGLE PULSE)

 

 

 

 

 

 

 

 

 

 

 

C

 

 

CURVES APPLY BELOW

MJE181

 

 

 

I

0.02

 

 

 

 

 

 

RATED VCEO

 

MJE182

 

 

 

 

 

 

 

 

 

 

 

0.01

2.0

3.0

5.0

7.0

10

20

30

50

70

100

 

1.0

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 6. MJE181, MJE182

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk) t 150 _C. TJ(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

 

10K

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PNP MJE171/MJE172

 

 

5K

 

 

 

 

 

 

VCC = 30 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

NPN MJE181/MJE182

 

 

3K

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

 

 

 

 

 

2K

 

 

 

 

 

 

IB1 = IB2

 

(pF)

 

 

 

 

 

 

 

 

 

 

 

 

1K

 

 

 

 

 

 

TJ = 25°C

 

50

 

 

 

 

 

Cib

 

 

 

 

(ns)TIMEt,

 

 

 

 

 

 

 

 

 

 

 

CAPACITANCE

 

 

 

 

 

 

 

TJ = 25°C

 

500

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

ts

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

tf

 

 

 

 

 

 

 

 

 

C,

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

NPN MJE181/182

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cob

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PNP MJE171/172

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02 0.03 0.05

0.1

0.2

0.3

0.5

1

2

3

5

10

 

10

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

 

0.01

 

0.5

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

 

 

Figure 7. Turn±Off Time

Figure 8. Capacitance

 

 

Motorola Bipolar Power Transistor Device Data

3

MJE171 MJE172 MJE181 MJE182

PACKAGE DIMENSIONS

±B±

 

U

 

F

C

Q

 

 

M

 

 

±A±

 

 

 

1

2

3

 

H

 

K

 

 

 

 

V

J

G

R

S

0.25 (0.010) M A M B M

D 2 PL

 

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.425

0.435

10.80

11.04

B

0.295

0.305

7.50

7.74

C

0.095

0.105

2.42

2.66

D

0.020

0.026

0.51

0.66

F

0.115

0.130

2.93

3.30

G

0.094 BSC

2.39 BSC

H

0.050

0.095

1.27

2.41

J

0.015

0.025

0.39

0.63

K

0.575

0.655

14.61

16.63

M

5

TYP

5

TYP

Q

0.148

0.158

3.76

4.01

R

0.045

0.055

1.15

1.39

S

0.025

0.035

0.64

0.88

U

0.145

0.155

3.69

3.93

V

0.040

±±±

1.02

±±±

0.25 (0.010) M A M B M

STYLE 1:

 

 

PIN 1.

EMITTER

 

2.

COLLECTOR

 

3.

BASE

CASE 77±08

TO±225AA

ISSUE V

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MJE171/D

*MJE171/D*

Соседние файлы в папке Bipolar