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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by TIP140/D

Darlington Complementary

Silicon Power Transistors

. . . designed for general±purpose amplifier and low frequency switching applications.

High DC Current Gain Ð Min h FE = 1000 @ IC = 5 A, VCE = 4 V

Collector±Emitter Sustaining Voltage Ð @ 30 mA

VCEO(sus) = 60 Vdc (Min) Ð TIP140, TIP145

VCEO(sus) = 80 Vdc (Min) Ð TIP141, TIP146

VCEO(sus) = 100 Vdc (Min) Ð TIP142, TIP147

Monolithic Construction with Built±In Base±Emitter Shunt Resistor

MAXIMUM RATINGS

 

 

TIP140

 

TIP141

 

TIP142

 

Rating

Symbol

TIP145

 

TIP146

 

TIP147

Unit

 

 

 

 

 

 

 

 

Collector±Emitter Voltage

VCEO

60

 

80

 

100

Vdc

Collector±Base Voltage

VCB

60

 

80

 

100

Vdc

Emitter±Base Voltage

VEB

 

5.0

 

 

Vdc

Collector Current Ð Continuous

IC

 

10

 

 

Adc

Peak (1)

 

 

15

 

 

 

 

 

 

 

 

 

 

Base Current Ð Continuous

IB

 

0.5

 

 

Adc

Total Device Dissipation

PD

 

125

 

 

Watts

@ TC = 25_C

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

 

± 65 to +150

 

_C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

1.0

_C/W

Thermal Resistance, Case to Ambient

RθJA

35.7

_C/W

(1) 5 ms, v 10% Duty Cycle.

DARLINGTON SCHEMATICS

NPN

TIP140

TIP141*

TIP142*

PNP

TIP145

TIP146*

TIP147*

*Motorola Preferred Device

10 AMPERE

DARLINGTON

COMPLEMENTARY SILICON POWER TRANSISTORS

60 ± 100 VOLTS

125 WATTS

CASE 340D±01

NPN

COLLECTOR

TIP140

 

TIP141

 

TIP142

 

BASE

 

8.0 k

40

PNP

COLLECTOR

TIP145

 

TIP146

 

TIP147

 

BASE

 

8.0 k

40

EMITTER

EMITTER

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

TIP140

TIP141

TIP142

TIP145

TIP146

TIP147

 

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage (1)

 

 

VCEO(sus)

 

 

 

Vdc

 

(IC = 30 mA, IB = 0)

 

TIP140, TIP145

 

60

Ð

Ð

 

 

 

 

 

 

 

TIP141, TIP146

 

80

Ð

Ð

 

 

 

 

 

 

 

TIP142, TIP147

 

100

Ð

Ð

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

 

ICEO

 

 

 

mA

 

(VCE = 30 Vdc, IB = 0)

 

TIP140, TIP145

 

Ð

Ð

2.0

 

 

(VCE = 40 Vdc, IB = 0)

 

TIP141, TIP146

 

Ð

Ð

2.0

 

 

(VCE = 50 Vdc, IB = 0)

 

TIP142, TIP147

 

Ð

Ð

2.0

 

 

Collector Cutoff Current

 

 

 

ICBO

 

 

 

mA

 

 

 

 

 

 

 

 

(VCB = 60 V, IE = 0)

 

TIP140, TIP145

 

Ð

Ð

1.0

 

 

(VCB = 80 V, IE = 0)

 

TIP141, TIP146

 

Ð

Ð

1.0

 

 

(VCB = 100 V, IE = 0)

 

TIP142, TIP147

 

Ð

Ð

1.0

 

 

Emitter Cutoff Current (VBE = 5.0 V)

 

 

 

IEBO

Ð

Ð

2 0

mA

 

ON CHARACTERISTICS (1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

 

 

 

hFE

 

 

 

Ð

 

(IC = 5.0 A, VCE = 4.0 V)

 

 

 

 

1000

Ð

Ð

 

 

(IC = 10 A, VCE = 4.0 V)

 

 

 

 

500

Ð

Ð

 

 

Collector±Emitter Saturation Voltage

 

 

 

VCE(sat)

 

 

 

Vdc

 

(IC = 5.0 A, IB = 10 mA)

 

 

 

 

Ð

Ð

2.0

 

 

(IC = 10 A, IB = 40 mA)

 

 

 

 

Ð

Ð

3.0

 

 

Base±Emitter Saturation Voltage

 

 

 

VBE(sat)

Ð

Ð

3.5

Vdc

 

(IC = 10 A, IB = 40 mA)

 

 

 

 

 

 

 

 

 

Base±Emitter On Voltage

 

 

 

VBE(on)

Ð

Ð

3.0

Vdc

 

(IC = 10 A, VCE = 4.0 Vdc)

 

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Resistive Load (See Figure 1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

 

 

 

 

td

Ð

0.15

Ð

μs

 

Rise Time

 

 

(VCC = 30 V, IC = 5.0 A,

 

 

t

Ð

0.55

Ð

μs

 

 

 

 

IB = 20 mA, Duty Cycle v 2.0%,

 

r

 

 

 

 

 

Storage Time

 

 

ts

Ð

2.5

Ð

μs

 

 

IB1 = IB2, RC & RB Varied, TJ = 25_C)

 

 

Fall Time

 

 

 

 

 

 

tf

Ð

2.5

Ð

μs

 

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.

 

 

 

 

 

 

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

VCC

 

 

± 30 V

 

 

D1, MUST BE FAST RECOVERY TYPE, eg:

 

 

 

 

1N5825 USED ABOVE IB 100 mA

RC

 

 

MSD6100 USED BELOW IB 100 mA

SCOPE

 

 

TUT

 

 

 

 

 

 

 

 

V2

 

R

 

 

approx

 

B

 

 

 

 

 

 

+12 V

 

 

 

 

0

51

D1

8.0 k

40

 

 

 

 

V1

 

 

 

 

 

 

 

+ 4.0 V

 

 

 

 

 

 

 

appox.

 

 

 

 

 

 

 

 

 

 

 

± 8.0 V

 

 

25

μ

s

for td and tr, D1 is disconnected

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tr, tf 10 ns

 

 

 

and V2 = 0

DUTY CYCLE = 1.0%

 

 

 

 

 

 

 

 

For NPN test circuit reverse diode and voltage polarities.

Figure 1. Switching Times Test Circuit

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PNP

 

 

5.0

 

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

 

ts

 

 

 

 

 

 

 

μs)

2.0

 

tf

 

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

t, TIME

1.0

 

 

 

 

 

 

 

0.5

 

 

 

tr

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

d

@ V

= 0

VCC = 30 V

 

 

0.2

 

 

BE(off)

 

IC/IB = 250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB1 = IB2

 

 

0.1

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

0.2

0.5

1.0

 

3.0

5.0

10

20

 

 

 

IC, COLLECTOR CURRENT (AMP)

 

 

Figure 2. Switching Times

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

TIP140

TIP141

TIP142

TIP145

TIP146

TIP147

 

 

 

 

 

 

TYPICAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

NPN

 

 

 

 

 

 

 

 

 

PNP

 

 

 

 

 

 

 

TIP140, TIP141, TIP142

 

 

 

 

 

 

TIP145, TIP146, TIP147

 

 

 

 

 

 

 

 

 

 

 

 

 

20,000

 

 

 

 

 

 

 

 

 

5000

TJ = 150°C

 

 

 

 

 

 

 

 

TJ = 150°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

 

 

100°C

 

 

 

 

 

GAIN

10,000

 

 

 

100°C

 

 

 

 

 

 

 

 

 

 

 

 

7000

 

 

 

 

 

 

 

 

CURRENT

2000

 

25°C

 

 

 

 

 

CURRENT

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

5000

 

 

 

 

 

 

 

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C

 

 

 

 

DC

1000

 

 

 

 

 

 

 

DC

3000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

h

2000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

500

 

VCE = 4.0 V

 

 

 

 

 

 

 

 

 

VCE = 4.0 V

 

 

 

 

 

300

1.0

2.0

3.0

4.0

5.0

7.0

10

 

1000

0.7

1.0

2.0

3.0

4.0

5.0

7.0

10

 

0.5

 

0.5

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

 

 

 

IC, COLLECTOR CURRENT (AMPS)

 

 

Figure 3. DC Current Gain versus Collector Current

(VOLTS)

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SATURATION

3.0

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

IC = 10 A, IB = 4.0 mA

 

 

 

 

 

 

 

 

,COLLECTOR±EMITTER

 

 

 

 

 

 

 

1.0

 

 

 

 

 

IC = 5.0 A, IB = 10 mA

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

IC = 1.0 A, IB = 2.0 mA

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

CE(SAT)

± 50

± 25

0

25

50

75

100

125

150

 

± 75

175

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

(VOLTS)

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SATURATION

3.0

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

IC = 10 A, IB = 4.0 mA

 

 

,COLLECTOR±EMITTER

1.0

 

 

 

 

 

IC = 5.0 A, IB = 10 mA

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

IC = 1.0 A, IB = 2.0 mA

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

CE(SAT)

 

 

 

 

 

 

 

 

 

 

± 75

± 50

± 25

0

25

50

75

100

125

150

175

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

Figure 4. Collector±Emitter Saturation Voltage

(VOLTS)

4.0

 

 

 

 

 

(VOLTS)

4.0

 

 

 

 

 

3.6

 

 

 

VCE = 4.0 V

 

3.6

 

 

 

VCE = 4.0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

3.2

 

 

 

 

 

VOLTAGE

3.2

 

 

 

 

 

2.8

 

 

 

 

 

2.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, BASE±EMITTER

2.4

 

 

 

 

 

, BASE±EMITTER

2.4

 

 

 

IC = 10 A

 

2.0

 

 

 

IC = 10 A

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.6

 

 

 

5.0 A

 

1.6

 

 

 

5.0 A

 

BE

1.2

 

 

 

 

 

BE

1.2

 

 

 

 

 

V

 

 

 

1.0 A

 

V

 

 

 

1.0 A

 

 

0.8

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 75

± 25

25

75

125

175

 

± 75

± 25

25

75

125

175

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

 

 

 

TJ, JUNCTION TEMPERATURE (°C)

 

Figure 5. Base±Emitter Voltage

Motorola Bipolar Power Transistor Device Data

3

TIP140 TIP141 TIP142 TIP145 TIP146 TIP147

ACTIVE±REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. At high case temper-

atures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

 

20

 

 

 

 

 

 

(mA)

10

 

 

 

 

 

 

(AMP)

 

 

 

 

 

 

7.0

 

 

 

 

 

 

5.0

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

3.0

 

 

dc

 

 

 

2.0

TJ = 150°C

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

 

SECONDARY BREAKDOWN LIMIT

 

 

 

1.0

BONDING WIRE LIMIT

 

 

 

 

THERMAL LIMITATION @ TC = 25°C

 

 

 

 

 

TIP140, 145

 

 

 

C

 

 

 

TIP141, 146

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

TIP142, 147

 

 

 

 

 

20

30

50

 

 

 

10

15

70

100

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 6. Active±Region Safe Operating Area

(AMPS)

15

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

7.0

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

100 mJ

 

 

COLLECTOR

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

0.5

1.0

2.0

5.0

10

20

50

100

 

L, UNCLAMPED INDUCTIVE LOAD (mH)

 

 

Figure 7. Unclamped Inductive Load

 

 

 

 

VCE MONITOR

 

w 7.0 ms (SEE NOTE 1)

 

 

 

 

INPUT

5.0 V

 

 

 

 

 

MPS±U52

 

 

 

 

VOLTAGE

0

 

 

 

 

COLLECTOR

100 ms

 

RBB1

 

 

100 mH

 

 

 

CURRENT

0

50

 

 

TUT

1.5 k

 

 

 

 

INPUT

 

 

VCC = 20 V

1.42 A

 

 

 

 

 

50

R

 

 

IC

 

 

 

BB2

 

 

MONITOR

VCE(sat)

 

 

= 100

 

 

 

 

VBB2 = 0

 

± 20 V

 

 

 

 

 

 

V

RS = 0.1

COLLECTOR

 

 

BB1

= 10 V

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

TEST CIRCUIT

 

V(BR)CER

 

NOTE 1: Input pulse width is increased until ICM = 1.42 A.

VOLTAGE AND CURRENT WAVEFORMS

NOTE 2: For NPN test circuit reverse polarities.

 

Figure 8. Inductive Load

CURRENT

 

100

PNP

 

 

VCE = 10 V

 

(WATTS)

5.0

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

IC = 1.0 A

 

 

 

 

 

 

 

 

SMALL±SIGNAL, FORWARD

TRANSFERRATIO

 

 

 

 

TJ = 25°C

 

 

4.0

 

 

 

 

 

2.0

 

 

PNP

 

 

P

 

 

 

 

 

 

 

 

20

 

 

 

 

DISSIPATION

3.0

 

 

 

 

 

 

 

7.0

 

 

NPN

 

 

 

 

 

 

 

 

 

10

NPN

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

POWER,

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

1.0

 

 

 

 

 

fe

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

1.0

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

2.0

3.0

5.0

7.0

10

 

0

40

80

120

160

200

 

 

 

 

f, FREQUENCY (MHz)

 

 

 

 

 

 

TA, FREE±AIR TEMPERATURE (°C)

 

 

Figure 9. Magnitude of Common Emitter

Figure 10. Free±Air Temperature

Small±Signal Short±Circuit Forward

Power Derating

Current Transfer Ratio

 

 

 

4

Motorola Bipolar Power Transistor Device Data

TIP140 TIP141 TIP142 TIP145 TIP146 TIP147

PACKAGE DIMENSIONS

 

 

C

NOTES:

B

Q

E

1.

DIMENSIONING AND TOLERANCING PER ANSI

 

Y14.5M, 1982.

 

 

 

2.

CONTROLLING DIMENSION: MILLIMETER.

 

 

 

 

 

MILLIMETERS

INCHES

 

U

 

4

DIM

MIN

MAX

MIN

MAX

 

 

 

A

A

19.00

19.60

0.749

0.771

 

L

 

B

14.00

14.50

0.551

0.570

S

 

 

C

4.20

4.70

0.165

0.185

 

 

 

D

1.00

1.30

0.040

0.051

 

 

 

 

 

1

2

3

E

1.45

1.65

0.058

0.064

K

G

5.21

5.72

0.206

0.225

 

 

 

 

 

 

 

H

2.60

3.00

0.103

0.118

 

 

 

 

J

0.40

0.60

0.016

0.023

 

 

 

 

K

28.50

32.00

1.123

1.259

 

 

 

 

L

14.70

15.30

0.579

0.602

 

 

 

 

Q

4.00

4.25

0.158

0.167

 

 

 

 

S

17.50

18.10

0.689

0.712

 

 

 

 

U

3.40

3.80

0.134

0.149

 

 

 

 

V

1.50

2.00

0.060

0.078

D

J

STYLE 1:

 

V

H

 

PIN 1.

BASE

G

 

2.

COLLECTOR

 

3.

EMITTER

 

 

 

 

4.

COLLECTOR

CASE 340D±01

TO±218AC

ISSUE A

Motorola Bipolar Power Transistor Device Data

5

TIP140 TIP141 TIP142 TIP145 TIP146 TIP147

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

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TIP140/D

*TIP140/D*

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