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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BDW42/D

Darlington Complementary

Silicon Power Transistors

. . . designed for general purpose and low speed switching applications.

•High DC Current Gain ± hFE = 2500 (typ.) @ IC = 5.0 Adc.

•Collector Emitter Sustaining Voltage @ 30 mAdc:

VCEO(sus) = 80 Vdc (min.) Ð BDW46

VCEO(sus) = 100 Vdc (min.) Ð BDW42/BDW47

• Low Collector Emitter Saturation Voltage

VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc

VCE(sat) = 3.0 Vdc (max.) @ IC = 10.0 Adc

•Monolithic Construction with Built±In Base Emitter Shunt resistors

•TO±220AB Compact Package

MAXIMUM RATINGS

				BDW42
Rating	Symbol	BDW46		BDW47	Unit

Collector±Emitter Voltage	VCEO	80		100	Vdc
Collector±Base Voltage	VCB	80		100	Vdc
Emitter±Base Voltage	VEB		5.0		Vdc
Collector Current Ð Continuous	IC		15		Adc
Base Current	IB		0.5		Adc
Total Device Dissipation	PD		85		Watts
@ TC = 25_C			85		Watts
Derate above 25_C			0.68		W/_C

Operating and Storage Junction	TJ, Tstg	± 55 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	1.47	_C/W

NPN

BDW42*

PNP

BDW46 BDW47*

*Motorola Preferred Device

DARLINGTON

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 ± 100 VOLTS

85 WATTS

CASE 221A±06

TO±220AB

	90
(WATTS)	80
	70
	60
DISSIPATION	60
	50
	40

POWER	30
POWER	20
,
D
P	10
	10
	0	50	75	100	125	150
	25	50	75	100	125	150
		TC, CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

			BDW42		BDW46	BDW47
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol		Min	Max	Unit

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage (1)		VCEO(sus)			Ð	Vdc
(IC = 30 mAdc, IB = 0)	BDW46			80	Ð
	BDW42/BDW47			100	Ð

Collector Cutoff Current		ICEO				mAdc
(VCE = 40 Vdc, IB = 0)	BDW46			Ð	2.0
(VCE = 50 Vdc, IB = 0)	BDW42/BDW47			Ð	2.0
Collector Cutoff Current		ICBO				mAdc
(VCB = 80 Vdc, IE = 0)	BDW41/BDW46			Ð	1.0
(VCB = 100 Vdc, IE = 0)	BDW42/BDW47			Ð	1.0
Emitter Cutoff Current		IEBO		Ð	2.0	mAdc
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)

DC Current Gain		hFE			Ð
(IC = 5.0 Adc, VCE = 4.0 Vdc)				1000	Ð
(IC = 10 Adc, VCE = 4.0 Vdc)				250	Ð
Collector±Emitter Saturation Voltage		VCE(sat)				Vdc
(IC = 5.0 Adc, IB = 10 mAdc)				Ð	2.0
(IC = 10 Adc, IB = 50 mAdc)				Ð	3.0
Base±Emitter On Voltage		VBE(on)		Ð	3.0	Vdc
(IC = 10 Adc, VCE = 4.0 Vdc)
SECOND BREAKDOWN (2)

Second Breakdown Collector		IS/b				Adc
Current with Base Forward Biased
BDW42	VCE = 28.4 Vdc			3.0	Ð
	VCE = 40 Vdc			1.2	Ð
BDW46/BDW47	VCE = 22.5 Vdc			3.8	Ð
	VCE = 36 Vdc			1.2	Ð
DYNAMIC CHARACTERISTICS

Magnitude of common emitter small signal short circuit current transfer ratio		fT		4.0	Ð	MHz
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance		Cob				pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)	BDW42			Ð	200
	BDW46/BDW47			Ð	300

Small±Signal Current Gain		hfe		300	Ð
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

(1)Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%.

(2)Pulse Test non repetitive: Pulse Width = 250 ms.

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS	VCC
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS	± 30 V
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA		RC SCOPE
MSD6100 USED BELOW IB [ 100 mA		RC SCOPE
TUT
TUT

V2		RB
APPROX
+ 8.0 V	51	D1	[ 8.0 k	[ 150
0	51	D1	[ 8.0 k	[ 150
0

V1		+ 4.0 V
V1		+ 4.0 V
APPROX	25 μs	for td and tr, D1 id disconnected


± 12 V

	tr, tf v 10 ns	and V2 = 0
		For NPN test circuit reverse all polarities
	DUTY CYCLE = 1.0%

	5.0
	3.0	ts
	3.0
	2.0
( μs)	1.0					tf
( μs)	0.7
t, TIME	0.5
t, TIME	0.3						tr
	0.3
	0.2
	0.2	VCC = 30 V
		VCC = 30 V
	0.1	IC/IB = 250
	0.1	IB1 = IB2
	0.07	°			td @ VBE(off) = 0 V
	0.05	TJ = 25 C			td @ VBE(off) = 0 V
	0.05	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
			IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit

Figure 3. Switching Times

Motorola Bipolar Power Transistor Device Data

3±213

BDW42		BDW46		BDW47
r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)	1.0
	0.7		D = 0.5
	0.5		D = 0.5
	0.5
	0.3		0.2
	0.2		0.2
	0.2		0.1
			0.1									P(pk)
	0.1		0.05									P(pk)				RθJC(t) = r(t) RθJC
	0.07		0.02													RθJC = 1.92°C/W
	0.05												t1			D CURVES APPLY FOR POWER
	0.03			SINGLE PULSE									t1	t2		PULSE TRAIN SHOWN
	0.03		0.01	SINGLE PULSE										t2		READ TIME AT t1
	0.02		0.01										DUTY CYCLE, D = t /t			TJ(pk) ± TC = P(pk) RθJC(t)
															1 2
	0.01
	0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
									t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

ACTIVE±REGION SAFE OPERATING AREA

	50
	20								0.1 ms
(AMP)	20
(AMP)	10	TJ = 25°C						1.0 ms	0.5 ms
CURRENT	5.0								0.5 ms
	5.0
	2.0		SECOND BREAKDOWN LIMIT					dc
			BONDING WIRE LIMIT					dc
			BONDING WIRE LIMIT
, COLLECTOR	1.0		THERMAL LIMITED
	0.5		@ TC = 25°C (SINGLE PULSE)
	0.5
	0.2
C
I	0.1
	0.1						BDW42
	0.05						BDW42
	0.05	2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. BDW42

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the

curves indicate. The data of Fig. 5 and 6 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second break-

10,000
GAIN	5000
GAIN	3000
CURRENT	3000
	2000
	1000
	500
,SMALL±SIGNAL	500
	300			TJ = 25°C
	200			VCE = 3.0 V
				VCE = 3.0 V
	100			IC = 3.0 A
	50
FE	30		BDW46, 47 (PNP)
h	20		BDW42 (NPN)
	20		BDW42 (NPN)
	10	2.0	5.0	10	20	50	100	200	500	1000
	1.0	2.0	5.0	10	20	50	100	200	500	1000

f, FREQUENCY (kHz)

Figure 7. Small±Signal Current Gain

	50
	20								0.1 ms
(AMP)	20
(AMP)	10	TJ = 25°C					1.0 ms		0.5 ms
CURRENT	5.0								0.5 ms
	5.0
	2.0		SECOND BREAKDOWN LIMIT
	2.0		BONDING WIRE LIMIT				dc
, COLLECTOR	1.0		THERMAL LIMITED				dc
	1.0		THERMAL LIMITED
	0.5		@ TC = 25°C (SINGLE PULSE)
	0.5
	0.2
C							BDW46
I	0.1

							BDW47
	0.05						BDW47
	0.05	2.0	3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 6. BDW46 and BDW47

down pulse limits are valid for duty cycles to 10% provided

TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Fig. 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

* Linear extrapolation

	300
								TJ = + 25°C
	200
(pF)
CAPACITANCE	100						Cob
CAPACITANCE	70				Cib
C,
	50		BDW46, 47 (PNP)
			BDW46, 47 (PNP)
			BDW42 (NPN)
	30	0.2	0.5	1.0	2.0	5.0	10	20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

3±214

Motorola Bipolar Power Transistor Device Data

BDW42 BDW46 BDW47

BDW40, 41, 42 (NPN)

BDW45, 46, 47 (PNP)

	20,000
	10,000
GAIN	5000
CURRENTDC,	1000
	3000
	2000
FE
h	500
	500
	300
	200
	200
	0.1

										VCE = 3.0		V			20,000
															20,000
															10,000
															10,000
														GAIN		7000
TJ	= 150°C													GAIN		5000
TJ	= 150°C													CURRENTDC,		1000
																3000
			25°	C												2000
			25°	C
		± 55°C												FE		700
		± 55°C												h		700
																500
																300
																200
0.2			0.3		0.5	0.7	1.0	2.0	3.0	5.0	7.0		10			200
0.2			0.3		0.5	0.7	1.0	2.0	3.0	5.0	7.0		10			0.1

IC, COLLECTOR CURRENT (AMP)

Figure 9. DC Current Gain

VCE = 3.0 V

TJ = 150°C

25°C

± 55°C

0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
	IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

3.0																(VOLTS)	3.0
3.0												TJ	= 25	°C		VOLTAGE	3.0														TJ =	25°C
2.6												TJ	= 25	°C			2.6														TJ =	25°C

	IC =	2.0	A			4.0 A		6.0	A										I	C =	2.0	A		4.0 A			6.0 A
																			I
2.2																COLLECTOR±EMITTER,	2.2


1.8																	1.8


1.4																CE	1.4




1.0																V	1.0
	0.5	0.7		1.0		2.0	3.0	5.0		7.0	10	20			30	V		0.5	0.7		1.0		2.0		3.0	5.0		7.0	10	20			30

0.3																	0.3
						IB, BASE CURRENT (mA)																	IB, BASE CURRENT (mA)
										Figure 10. Collector Saturation Region
					BDW40, 41, 42 (NPN)																		BDW45, 46, 47 (PNP)

V, VOLTAGE (VOLTS)

3.0

TJ = 25°C

2.5

2.0

1.5VBE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

1.0

VCE(sat) @ IC/IB = 250

0.5

0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
		IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

3.0

TJ = 25°C

2.5

2.0

1.5VBE @ VCE = 4.0 V

1.0VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

0.5

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 11. ªOnº Voltages

Motorola Bipolar Power Transistor Device Data

3±215

BDW42 BDW46 BDW47

°C)

+ 5.0

+ 4.0

(mV/

C/IB

v 250

+ 3.0

COEFFICIENT

25°C

to 150°C

+ 2.0

+ 1.0

± 55°C to

25°C

TEMPERATURE,

for VBE

± 55°C to

°C

± 1.0

*θVC for V

CE(sat)

± 2.0

25°

150°C

± 3.0

± 4.0

± 5.0

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

0.1

IC, COLLECTOR CURRENT (AMP)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+5.0

+4.0

+3.0

+2.0

+1.0

±1.0

±2.0

±3.0

±4.0

±5.0

*IC/IB v 250

+ 25°C to 150°C

*θVC for VCE(sat)

	θVB for VBE			± 55°C to +25°C		± 55°C to +25°C
	°		°			± 55°C to +25°C
	+ 25 C to 150 C

0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10
		IC, COLLECTOR CURRENT (AMP)

Figure 12. Temperature Coefficients

	105
	104	REVERSE			FORWARD
μA)	104
(		VCE = 30 V
CURRENT	103	VCE = 30 V
	103
	102
COLLECTOR	102
	101	TJ = 150°C
	101
			100°C
,	0		100°C
C	0
I	10		25°C
			25°C
	10± 1	+ 0.4	+ 0.2	0	± 0.2 ± 0.4	± 0.6	± 0.8	± 1.0	± 1.2	± 1.4
	+ 0.6	+ 0.4	+ 0.2	0	± 0.2 ± 0.4	± 0.6	± 0.8	± 1.0	± 1.2	± 1.4
			VBE, BASE±EMITTER VOLTAGE (VOLTS)

	105
	104	REVERSE		FORWARD
μA)	104
(		VCE = 30 V
CURRENT	103	VCE = 30 V
	103
	102
,COLLECTOR	102
	TJ = 150°C
	101
	100	°
C		°
I		100 C
	10± 1	25°C
	10± 1	± 0.4 ± 0.2	0	+ 0.2 + 0.4	+ 0.6	+ 0.8	+ 1.0	+ 1.2	+ 1.4
	± 0.6	± 0.4 ± 0.2	0	+ 0.2 + 0.4	+ 0.6	+ 0.8	+ 1.0	+ 1.2	+ 1.4
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 13. Collector Cut±Off Region

NPN	COLLECTOR
BDW42

BASE
[ 8.0 k	[ 60

PNP	COLLECTOR
BDW46
BDW47

BASE
[ 8.0 k	[ 60

EMITTER

Figure 14. Darlington Schematic

3±216

Motorola Bipolar Power Transistor Device Data

BDW42 BDW46 BDW47

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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◊ BDW42/D

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