MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6035/D
Plastic Darlington Complementary Silicon Power Transistors
. . . designed for general±purpose amplifier and low±speed switching applications.
• High DC Current Gain Ð
hFE = 2000 (Typ) @ IC = 2.0 Adc
• Collector±Emitter Sustaining Voltage Ð @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) Ð 2N6035, 2N6038 VCEO(sus) = 80 Vdc (Min) Ð 2N6036, 2N6039
• Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc
•Monolithic Construction with Built±In Base±Emitter Resistors to Limit Leakage Multiplication
•Space±Saving High Performance±to±Cost Ratio TO±225AA Plastic Package
MAXIMUM RATINGS (1)
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2N6035 |
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2N6036 |
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Rating |
Symbol |
2N6038 |
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2N6039 |
Unit |
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Collector±Emitter Voltage |
VCEO |
60 |
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80 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
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80 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
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4.0 |
Adc |
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Peak |
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8.0 |
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Base Current |
IB |
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100 |
mAdc |
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Total Power Dissipation @ TC = 25_C |
PD |
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40 |
Watts |
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Derate above 25_C |
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0.32 |
W/_C |
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Total Power Dissipation @ TA = 25_C |
PD |
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1.5 |
Watts |
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Derate above 25_C |
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0.012 |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
θJC |
3.12 |
_C/W |
Thermal Resistance, Junction to Ambient |
θJA |
83.3 |
_C/W |
(1) Indicates JEDEC Registered Data.
2N6030 thru 2N603 (See 2N5630)
PNP
2N6035
2N6036*
NPN
2N6038
2N6039*
*Motorola Preferred Device
DARLINGTON 4±AMPERE COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 80 VOLTS
40 WATTS
CASE 77±08
TO±225AA TYPE
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TA |
TC |
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4.0 |
40 |
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(WATTS) |
3.0 |
30 |
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DISSIPATION |
2.0 |
20 |
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TC |
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,POWER |
1.0 |
10 |
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TA |
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D |
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P |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
Motorola, Inc. 1995
2N6035 |
2N6036 |
2N6038 |
2N6039 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage |
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VCEO(sus) |
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Vdc |
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(IC = 100 mAdc, IB = 0) |
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2N6035, 2N6038 |
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60 |
Ð |
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2N6036, 2N6039 |
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80 |
Ð |
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Collector±Cutoff Current |
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ICEO |
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μA |
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(VCE = 60 Vdc, IB = 0) |
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2N6035, 2N6038 |
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Ð |
100 |
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(VCE = 80 Vdc, IB = 0) |
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2N6036, 2N6039 |
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Ð |
100 |
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Collector±Cutoff Current |
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ICEX |
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μA |
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(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) |
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2N6035, 2N6038 |
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Ð |
100 |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) |
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2N6036, 2N6039 |
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Ð |
100 |
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(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) |
2N6035, 2N6038 |
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Ð |
500 |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) |
2N6036, 2N6039 |
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Ð |
500 |
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Collector±Cutoff Current |
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ICBO |
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mAdc |
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(VCB = 60 Vdc, IE = 0) |
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2N6035, 2N6038 |
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Ð |
0.5 |
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(VCB = 80 Vdc, IE = 0) |
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2N6036, 2N6039 |
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Ð |
0.5 |
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Emitter±Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
2.0 |
mAdc |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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Ð |
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(IC = 0.5 Adc, VCE = 3.0 Vdc) |
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500 |
Ð |
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(IC = 2.0 Adc, VCE = 3.0 Vdc) |
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750 |
15,000 |
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(IC = 4.0 Adc, VCE = 3.0 Vdc) |
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100 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 2.0 Adc, IB = 8.0 mAdc) |
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Ð |
2.0 |
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(IC = 4.0 Adc, IB = 40 mAdc) |
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Ð |
3.0 |
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Base±Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) |
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VBE(sat) |
Ð |
4.0 |
Vdc |
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Base±Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) |
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VBE(on) |
Ð |
2.8 |
Vdc |
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DYNAMIC CHARACTERISTICS |
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Small±Signal Current±Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) |
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|hfe| |
25 |
Ð |
Ð |
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Output Capacitance |
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Cob |
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pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
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2N6035, 2N6036 |
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Ð |
200 |
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2N6038, 2N6039 |
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Ð |
100 |
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* Indicates JEDEC Registered Data.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1 MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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R |
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approx |
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B |
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+ 8.0 |
V |
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0 |
51 |
D1 |
≈ 8.0 k |
≈ 60 |
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V1 |
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+ 4.0 V |
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approx |
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±12 V |
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μ |
s |
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25 |
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for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0, RB and RC are varied |
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to obtain desired test currents. |
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DUTY CYCLE = 1.0%
For NPN test circuit, reverse diode, polarities and input pulses.
Figure 2. Switching Times Test Circuit
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4.0 |
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VCC = 30 V |
IB1 |
= IB2 |
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ts |
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IC/IB = 250 |
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° |
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TJ = 25 |
C |
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2.0 |
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μs) |
1.0 |
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tf |
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( |
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t, TIME |
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0.8 |
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0.6 |
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tr |
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0.4 |
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PNP |
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td @ VBE(off) = 0 |
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0.2 |
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NPN |
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0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
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2.0 |
4.0 |
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0.04 |
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IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |
2N6035 2N6036 2N6038 2N6039
TRANSIENT THERMAL RESISTANCE, |
NORMALIZED |
r(t), |
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1.0 |
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0.7 |
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D = 0.5 |
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0.5 |
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0.3 |
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0.2 |
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0.2 |
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0.1 |
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P(pk) |
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0.1 |
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0.05 |
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θJC(t) = r(t) θJC |
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θJC = 3.12°C/W MAX |
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0.07 |
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0.02 |
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D CURVES APPLY FOR POWER |
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0.05 |
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PULSE TRAIN SHOWN |
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t1 |
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0.01 |
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0.03 |
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READ TIME AT t1 |
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t2 |
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SINGLE PULSE |
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0.02 |
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TJ(pk) ± TC = P(pk) θJC(t) |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
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0.02 0.03 |
0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
200 |
300 |
500 |
1000 |
0.01 |
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t, TIME (ms) |
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Figure 4. Thermal Response
ACTIVE±REGION SAFE±OPERATING AREA
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1.0 |
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7.0 |
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100 μs |
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(AMP) |
5.0 |
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5.0 ms |
1.0 ms |
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3.0 |
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CURRENT |
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dc |
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2.0 |
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1.0 |
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TJ = 150°C |
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COLLECTOR |
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BONDING WIRE LIMITED |
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0.7 |
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THERMALLY LIMITED |
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0.5 |
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@ TC = 25°C (SINGLE PULSE) |
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0.3 |
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SECOND BREAKDOWN LIMITED |
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, |
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C |
0.2 |
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I |
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2N6036 |
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0.1 |
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2N6035 |
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70 |
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5.0 |
7.0 |
10 |
20 |
30 |
50 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. 2N6035, 2N6036
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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1.0 |
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7.0 |
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100 μs |
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(AMP) |
5.0 |
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5.0 ms |
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3.0 |
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dc |
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1.0 ms |
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CURRENT |
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2.0 |
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1.0 |
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TJ = 150°C |
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COLLECTOR |
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BONDING WIRE LIMITED |
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0.7 |
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THERMALLY LIMITED |
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0.5 |
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@ TC = 25°C (SINGLE PULSE) |
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0.3 |
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SECOND BREAKDOWN LIMITED |
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, |
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C |
0.2 |
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I |
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2N6039 |
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0.1 |
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2N6038 |
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20 |
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5.0 |
7.0 |
10 |
30 |
50 |
70 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 6. 2N6038, 2N6039 |
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200 |
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100 |
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TC = 25°C |
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(pF) |
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70 |
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CAPACITANCE |
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50 |
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Cob |
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30 |
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Cib |
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C, |
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20 |
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PNP |
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NPN |
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10 |
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0.04 0.06 0.1 |
0.2 |
0.4 0.6 |
1.0 |
2.0 |
4.0 6.0 |
10 |
20 |
40 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data |
3 |
2N6035 |
2N6036 |
2N6038 |
2N6039 |
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PNP |
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2N6035, 2N6036 |
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6.0 k |
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4.0 k |
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TC = 125°C |
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VCE = 3.0 V |
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GAIN |
3.0 k |
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2.0 k |
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25°C |
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CURRENT |
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± 55°C |
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1.0 k |
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, DC |
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800 |
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FE |
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h |
600 |
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400 |
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300 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
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0.04 |
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IC, COLLECTOR CURRENT (AMP) |
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NPN |
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2N6038, 2N6039 |
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6.0 k |
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4.0 k |
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TJ = 125°C |
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VCE = 3.0 V |
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GAIN |
3.0 k |
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25°C |
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2.0 k |
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CURRENT |
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1.0 k |
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± 55°C |
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, DC |
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800 |
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FE |
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h |
600 |
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400 |
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300 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
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0.04 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 8. DC Current Gain
(VOLTS) |
3.4 |
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3.0 |
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TJ = 25°C |
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VOLTAGE |
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IC = |
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2.6 |
0.5 A |
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1.0 A |
2.0 A |
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4.0 A |
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COLLECTOR±EMITTER |
2.2 |
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1.8 |
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1.4 |
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1.0 |
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, |
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CE |
0.6 |
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V |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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0.1 |
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IB, BASE CURRENT (mA) |
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(VOLTS) |
3.4 |
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3.0 |
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TJ = 25°C |
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IC |
= |
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VOLTAGE |
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0.5 A |
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2.6 |
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1.0 A |
2.0 A |
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4.0 A |
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COLLECTOR±EMITTER |
2.2 |
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1.8 |
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1.4 |
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1.0 |
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, |
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CE |
0.6 |
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V |
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0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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0.1 |
||||||||||
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IB, BASE CURRENT (mA) |
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Figure 9. Collector Saturation Region
|
2.2 |
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TJ = 25°C |
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1.8 |
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(VOLTS) |
1.4 |
VBE(sat) @ IC/IB = 250 |
|
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VBE @ VCE = 3.0 V |
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||||
V, VOLTAGE |
1.0 |
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VCE(sat) @ IC/IB = 250 |
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0.6 |
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0.2 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
|
0.04 |
||||||||
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IC, COLLECTOR CURRENT (AMP) |
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2.2 |
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TJ = 25°C |
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1.8 |
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(VOLTS) |
1.4 |
VBE(sat) @ IC/IB = 250 |
|
|
VBE @ VCE = 3.0 V |
|
|||
V, VOLTAGE |
1.0 |
|
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VCE(sat) @ IC/IB = 250 |
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0.6 |
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0.2 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
4.0 |
|
0.04 |
||||||||
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|
IC, COLLECTOR CURRENT (AMP) |
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|
|||
Figure 10. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
2N6035 2N6036 2N6038 2N6039
PACKAGE DIMENSIONS
±B± |
|
||
U |
|
F |
C |
Q |
|
|
M |
|
|
±A± |
|
|
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|
|
1 |
2 |
3 |
|
H |
|
K |
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V |
J |
G |
R |
S |
0.25 (0.010) M A M B M |
D 2 PL |
|
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.425 |
0.435 |
10.80 |
11.04 |
B |
0.295 |
0.305 |
7.50 |
7.74 |
C |
0.095 |
0.105 |
2.42 |
2.66 |
D |
0.020 |
0.026 |
0.51 |
0.66 |
F |
0.115 |
0.130 |
2.93 |
3.30 |
G |
0.094 BSC |
2.39 BSC |
||
H |
0.050 |
0.095 |
1.27 |
2.41 |
J |
0.015 |
0.025 |
0.39 |
0.63 |
K |
0.575 |
0.655 |
14.61 |
16.63 |
M |
5 |
TYP |
5 |
TYP |
Q |
0.148 |
0.158 |
3.76 |
4.01 |
R |
0.045 |
0.055 |
1.15 |
1.39 |
S |
0.025 |
0.035 |
0.64 |
0.88 |
U |
0.145 |
0.155 |
3.69 |
3.93 |
V |
0.040 |
±±± |
1.02 |
±±± |
0.25 (0.010) M A M B M |
STYLE 1: |
EMITTER |
|
PIN 1. |
|
|
2. |
COLLECTOR |
|
3. |
BASE |
CASE 77±08
TO±225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data |
5 |
2N6035 2N6036 2N6038 2N6039
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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◊ |
2N6035/D |
*2N6035/D*