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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6836/D

2N6836

Designer's Data Sheet

Switchmode Series Ultra-Fast

NPN Silicon Power Transistors

These transistors are designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line±operated switchmode applications.

• Switching Regulators

•Inverters

•Motor Controls

• Deflection Circuits

• Fast Turn±Off Times

30 ns Inductive Fall Time Ð 75 _C (Typ)

50 ns Inductive Crossover Time Ð 75 _C (Typ) 600 ns Inductive Storage Time Ð 75 _C (Typ)

• Operating Temperature Range ±65 to +200_C

• 100_C Performance Specified for: Reverse±Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages

Leakage Currents

MAXIMUM RATINGS (2)

15 AMPERE

NPN SILICON

POWER TRANSISTOR

450 VOLTS

175 WATTS

CASE 1±07 TO±204AA (TO±3)

Rating	Symbol	Max	Unit

Collector±Emitter Voltage	VCEO(sus)	450	Vdc
Collector±Emitter Voltage	VCEV	850	Vdc
Emitter Base Voltage	VEB	6.0	Vdc
Collector Current Ð Continuous	IC	15	Adc
Ð Peak (1)	ICM	20
Base Current Ð Continuous	IB	10	Adc
Ð Peak (1)	IBM	15
Total Power Dissipation @ TC = 25_C	PD	175	Watts
@ TC = 100_C		100
Derate above 25_C		1.0	_
			W/ C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200	_C
THERMAL CHARACTERISTICS (2)

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.0	_C/W
Maximum Lead Temperature for Soldering	TL	275	_C
Purposes: 1/8″ from Case for 5.0 Seconds

(1)Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

(2)Indicate JEDEC Registered Data.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

2N6836

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (1)

Collector±Emitter Sustaining Voltage (Table 2)			VCEO(sus)	450*	Ð	Ð	Vdc
(IC = 100 mA, IB = 0)
Collector Cutoff Current			ICEV				mAdc
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)				Ð	Ð	0.25*
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)				Ð	Ð	1.5*
Collector Cutoff Current			ICER	Ð	Ð	2.5	mAdc
(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)
Emitter Cutoff Current			IEBO	Ð	Ð	1.0*	mAdc
(VEB = 6.0 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased			IS/b		See Figure 15*
Clamped Inductive SOA with Base Reverse Biased			RBSOA		See Figure 16

ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage			VCE(sat)				Vdc
(IC = 5.0 Adc, IB = 0.7 Adc)				Ð	Ð	1.2
(IC = 10 Adc, IB = 1.0 Adc)				Ð	Ð	2.5*
(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)				Ð	Ð	3.0*
Base±Emitter Saturation Voltage			VBE(sat)				Vdc
(IC = 10 Adc, IB = 1.0 Adc)				Ð	Ð	1.5*
(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)				Ð	Ð	1.5
DC Current Gain			hFE				Ð
(IC = 10 Adc, VCE = 5.0 Vdc)				8.0*	Ð	30*
(IC = 15 Adc, VCE = 5.0 Vdc)				5.0	Ð	Ð
DYNAMIC CHARACTERISTICS (2)

Current Gain Ð Bandwidth Product			fT	10*	Ð	75*	MHz
(VCE = 10 Vdc, IC = 0.25 Adc, ftest = 10 MHz)
Output Capacitance			Cob	50*	Ð	400*	pF
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time			td	Ð	20	100*	ns
Rise Time	(IC = 10 Adc,	(IB2 = 2.6 Adc,	tr	Ð	200	500*
Storage Time	VCC = 250 Vdc,	RB2 = 1.6 Ω)	t	Ð	1200	3000*
	IB1 = 1.0 Adc,		s
Fall Time	IB1 = 1.0 Adc,		tf	Ð	200	250*
Fall Time	PW = 30 μs,		tf	Ð	200	250*
Storage Time	Duty Cycle v 2.0%)	(VBE(off) = 5.0 Vdc)	ts	Ð	650	Ð
Storage Time			ts	Ð	650	Ð
Fall Time			tf	Ð	80	Ð
Fall Time			tf	Ð	80	Ð
Inductive Load (Table 2)

Storage Time			tsv	Ð	800	1500*	ns
Fall Time	(IC = 10 Adc,	(TC = 100_C)	tfi	Ð	50	150*
Crossover Time	(IC = 10 Adc,		tc	Ð	90	200*
Crossover Time	IB1 = 1.0 Adc,		tc	Ð	90	200*
Storage Time	VBE(off) = 5.0 Vdc,		t	Ð	1050	Ð
	VCE(pk) = 400 Vdc)		sv
Fall Time	VCE(pk) = 400 Vdc)	(TC = 150_C)	tfi	Ð	70	Ð
Fall Time		(TC = 150_C)	tfi	Ð	70	Ð
Crossover Time			tc	Ð	120	Ð

(1)Pulse Test: PW ± 300 μs, Duty Cycle v 2%.

(2)fT = |she| ftest.

* Indicates JEDEC Registered Limit.

3±2	Motorola Bipolar Power Transistor Device Data

2N6836

TYPICAL STATIC CHARACTERISTICS

hFE, DC CURRENT GAIN

TC = 100°C

25°C

5.0

VCE = 5.0 V

3.0

0.2

0.5

1.0

2.0

5.0

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	2.0
	2.0

	1.0	15 A
	0.7



	0.5	10 A
	0.5
	0.3

		5 A
		5 A

0.2IC = 1 A

0.1						TC = 25°C

	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10
0.02

IB, BASE CURRENT (AMPS)

Figure 2. Collector Saturation Region

(VOLTS)	5.0
	5.0
	3.0
	3.0
VOLTAGE	1.0
	2.0


COLLECTOR±EMITTER	0.70								βf = 10				β	f =	5
COLLECTOR±EMITTER	0.10							T	J = 100°C				β	f =	5
	0.50			βf	= 10
	0.30		TJ =		25°C
	0.20
	0.20



,	0.07											TJ = 25°C
CE


V	0.05
V	0.05	0.3		0.5		0.7	1.0			2.0	3.0	5.0		7.0		10	15
	0.15 0.2	0.3		0.5		0.7	1.0			2.0	3.0	5.0		7.0		10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Voltage

VBE, BASE±EMITTER VOLTAGE (VOLTS)

1.5

βf = 10

1.0

TC = 25°C

0.70

75°C

0.50100°C

0.40

0.30

0.20

0.15

0.15 0.20 0.30 0.50 0.70 1.0 2.0 3.0 5.0 7.0 10 15

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base±Emitter Voltage

μA)

104

103

(

CURRENT

102

J = 150

°C

COLLECTOR

125

°C

101

100

°C

100

REVERSE

FORWARD

25°C

CE = 250 V

±1

10 ± 0.4

± 0.2

+ 0.2

+ 0.4

+ 0.6

VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

	10000
	5000
	5000
	3000
	3000		C	ib
	2000		C	ib
(pF)	2000
	1000

CAPACITANCE
	500



	300
	300				C	ob
	200				C	ob
	200
C,	100


	50



								T	C = 25°	C
								T
	20
	20
	10

		1.0					10				100	850
	0.1	1.0					10				100	850

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

Motorola Bipolar Power Transistor Device Data

3±3

2N6836

TYPICAL DYNAMIC CHARACTERISTICS

	5000
	5000	VBE(off)	= 0 VOLTS
	3000	VBE(off)	= 0 VOLTS
	3000	VBE(off)	= 2.0 VOLTS
(ns)	2000	VBE(off)	= 2.0 VOLTS
(ns)		VBE(off) = 5.0 VOLTS
TIME	1000	VBE(off) = 5.0 VOLTS
STORAGE,	500
STORAGE,

	300
	300
sv	200
sv	200
t					βf =	5
					βf =	5
	100			TC =		75°C
	0.07			VCC		= 20	VOLTS
	0.05
	0.05

	1.5	2.0		3.0	5.0		7.0				10	15
				IC, COLLECTOR CURRENT (AMPS)
				Figure 7. Storage Time
(ns)	1000


TIME	500						V	BE(off) =		0	VOLTS
	500							BE(off) =		0	VOLTS
									VBE(off)		= 5.0 VOLTS
FALL	300								VBE(off)		= 5.0 VOLTS
	300
CURRENT	200
	200

	100				VBE(off) = 2.0	VOLTS
COLLECTOR					VBE(off) = 2.0	VOLTS

	20

		T	C = 75°C
	50
		β	f = 5
fi
fi		V	CC = 20 VOLTS
,
t
	10
	10	2.0		3.0	5.0		7.0				10	15
	1.5	2.0		3.0	5.0		7.0				10	15

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Collector Current Fall Time

	5000
	5000
	3000
	3000	V		BE(off) = 0		VOLTS
	2000	V		BE(off) = 0		VOLTS
(ns)	2000

			VBE(off) = 2.0 VOLTS
TIME	1000		VBE(off) = 2.0 VOLTS
TIME

STORAGE,	700


	500			VBE(off) = 5.0 VOLTS
	500			VBE(off) = 5.0 VOLTS
	300
	300
sv	200
sv	200								βf = 10
t									βf = 10
	100								TC = 75		°C
	100								VCC = 20			VOLTS
	0.05


		2.0			3.0		5.0		7.0			10		15
	1.5	2.0			3.0		5.0		7.0			10		15
					IC, COLLECTOR CURRENT (AMPS)
					Figure 8. Storage Time
(ns)	1000


TIME	500						V	BE(off)	= 0	VOLTS
FALL	500						V	BE(off)	= 0	VOLTS
FALL	300
	300
CURRENT	200
	200

	100								VBE(off)		= 2.0		VOLTS
COLLECTOR									VBE(off)		= 2.0		VOLTS

	20

		TC	= 75°C				V	BE(off)	= 5.0		VOLTS
	50
fi		βf	= 10
fi		VCC = 20 VOLTS
,
t
	10
	10	2.0			3.0		5.0		7.0			10		15
	1.5	2.0			3.0		5.0		7.0			10		15

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Collector Current Fall Time

t c, CROSSOVER TIME (ns)

1500									1500
1500									1500
1000									1000
									1000
						VBE(off) = 0	VOLTS
						VBE(off) = 0	VOLTS
500		VBE(off) = 2.0 VOLTS						(ns)	500			VBE(off) = 0		VOLTS
								(ns)	500
300								TIME	300
300								CROSSOVER,	300
200								CROSSOVER,	200
200									200

100				VBE(off)	= 5.0	VOLTS			100				V	BE(off)	=	2.0	VOLTS
				VBE(off)	= 5.0	VOLTS

50								c	50



	βf = 5									βf =	10
	βf = 5							t
			= 75°C										V	BE(off) = 5.0 VOLTS
	T	C	= 75°C								°		V	BE(off) = 5.0 VOLTS
		C								TC =	75 C
	VCC = 20 VOLTS									TC =	75 C
20	VCC = 20 VOLTS								20	VCC	= 20 VOLTS
20									20
15									15
15									15

1.5	2.0	3.0	5.0	7.0	10	15	1.5	2.0	3.0	5.0	7.0	10	15
		IC, COLLECTOR CURRENT (AMPS)							IC, COLLECTOR CURRENT (AMPS)
		Figure 11. Crossover Time							Figure 12. Crossover Time

3±4	Motorola Bipolar Power Transistor Device Data

	IC pk			VCE(pk)		(AMPS)
		90% VCE(pk)	90% IC(pk)			(AMPS)
IC		90% VCE(pk)	90% IC(pk)			CURRENT
	tsv	trv	tc	tfi	tti	CURRENT
	tsv	trv		tfi	tti
VCE						BASE
I		10% VCE(pk)		10%	2% I	REVERSE,
B	90% IB1			I pk	2% I	C
				C
						B2
						I
		TIME

Figure 13. Inductive Switching Measurements

2N6836

10
10
9
9
8
8	IB1 =	2.0 AMPS
7	IB1 =	2.0 AMPS
6
6
5
5
4
4			IB1 = 1.0 AMPS
3
3					IC = 10	AMPS
2					IC = 10	AMPS
2					TC = 25°C
1					TC = 25°C
1
0
0	1.0		2.0	3.0	4.0		5.0
0	1.0		2.0	3.0	4.0		5.0

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 14. Peak Reverse Base Current

GUARANTEED SAFE OPERATING AREA LIMITS

CURRENTCOLLECTOR, (AMPS)	0.10		BONDING WIRE LIMIT							COLLECTORPEAK, CURRENT (AMPS)
	20
	10								10 μs
	5.0
	2.0						1 ms
	1.0	TC = 25°C
	0.50
C			THERMAL LIMIT							C(pk)
I	0.05									C(pk)

			SECOND BREAKDOWN LIMIT
			SECOND BREAKDOWN LIMIT							I
	0.02	10	20	30	50	70	100	200	300	450
	5.0	10	20	30	50	70	100	200	300	450
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 15. Maximum Forward Bias

Safe Operating Area

20
20
18
18
14
14	Bf w 4	100°C						VBE(off)		= 1 to 5 V
10	TC v	100°C
10

6.0				V	BE(off)	= 0	V


2.0


0
0	150		200	250		350		450	600 700		850
100	150		200	250		350		450	600 700		850

VCE, PEAK COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 16. Maximum Reverse Bias

Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 15 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC w 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figure 17. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base±to±emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current condition allowable during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 16 gives the RBSOA characteristics.

Motorola Bipolar Power Transistor Device Data

3±5

2N6836

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

1.0

RθJC(t) = r(t) RθJC

RθJC = 1.0°C/W

TJ(pk) ± TC = P(pk) RθJC(t)

0.1

0.01
	0.1	1.0		10	100	1 k
0.01			t, TIME (ms)

Figure 17. Thermal Response

	100
				SECOND BREAKDOWN
	80				DERATING
(%)	80
(%)
FACTOR	60
FACTOR
DERATING	40		THERMAL
			THERMAL
			DERATING
POWER	20
POWER
	0	40	80	120	160	200
	0	40	80	120	160	200
			TC, CASE TEMPERATURE (°C)

Figure 18. Power Derating

Table 1. Resistive Load Switching

	td and tr		0 V	ts and tf			+ Vdc [ 11 Vdc
			0 V
H.P. 214			[ ± 35 V			20	100
H.P. 214						20
OR								2N6191
OR		*IC						2N6191
EQUIV.	*IB	*IC		+
P.G.	*IB			+		0.02 μF		RB1
			H.P. 214	±		0.02 μF		RB1
			OR		10 μF
		TUT	OR					A
		TUT	EQUIV.					A
	RB = 10	RL	EQUIV.		0.02 μF
	RB = 10	RL	P.G.		0.02 μF			RB2
			P.G.					RB2
50		VCC				1.0 μF
		VCC	50					2N5337
					500		100
	[ 11 V
Vin		VCC = 250 Vdc						± V
0 V		RL = 25 Ω	+ V
		IC = 10 Adc	0 V
	tr v 15 ns	IB = 1.0 Adc	± 5 V
			A				TUT	RL
*Tektronix P±6042 or equivalent.								RL
*Tektronix P±6042 or equivalent.								*IC
				*IB				*IC
			50	*IB				VCC
			50					VCC
			VCC = 250	IB1 = 1.0 Adc				RB1 = 10 Ω
			RL = 25 Ω	IB2 = 2.6 Adc				RB2 = 1.6 Ω
			IC = 10 Adc	For VBE(off) = 5.0 V				RB2 = 0 Ω

*NOTE: Adjust ± V to obtain desired VBE(off) at Point A.

3±6	Motorola Bipolar Power Transistor Device Data

								2N6836
			Table 2. Inductive Load Switching
				0.02 μF		+ V [ 11 V
		H.P. 214		0.02 μF		100
		H.P. 214
		OR EQUIV.			20
		P.G.			20	2N6191
		P.G.

		0 V	+				RB1
		0 V	±	10 μF			RB1
			±	10 μF			A
		≈ ± 35 V					A
		≈ ± 35 V		0.02 μF			RB2
				0.02 μF
				1.0 μF
				1.0 μF
		50		+	±	2N5337
		50				2N5337
				500
						100	± V	IC(pk)
								IC(pk)
		T1	+ V				IC
		T1	+ V
		0 V			*IC			VCE(pk)
					*IC
						L
			± V			L	VCE
			± V				VCE
	[ Lcoil (ICpk)	A		T.U.T.		MR856		VCE(pk) = VCE(clamp)
T	[ Lcoil (ICpk)
1	VCC	50	*IB			Vclamp	VCC	IB1
	VCC	50	*IB			Vclamp	VCC	IB1
T1 adjusted to obtain IC(pk)							IB
V(BR)CEO		Inductive Switching		RBSOA
L = 10 mH		L = 200 μH		L = 200 μH				IB2
RB2 = R		RB2 = 0		RB2 = 0
VCC = 20 Volts		VCC = 20 Volts		VCC = 20 Volts
		RB1 selected for desired IB1		RB1 selected for desired IB1
*Tektronix		Scope Ð Tektronix
*P±6042 or		7403 or
*Equivalent		Equivalent		Note: Adjust ±V to obtain desired VBE(off) at Point A.

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

IC(pk) = 10 Amps

IB1 = 1.0 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 400 Volts

TC = 25°C

Time Base =

100 ns/cm

tsv

		VCE(pk)
0	I B1
	VCE(sat)
	tsv= 370 ns	I B2

IC(pk) = 10 Amps

IB1 = 1.0 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 400 Volts

TC = 25°C

Time Base =

20 ns/cm

		tfi, tc
	IC(pk)	tfi = 20 ns
	IC(pk)	VCE(pk)
		VCE(pk)
	V	tc
	CE(sat)	24 ns
		24 ns

Motorola Bipolar Power Transistor Device Data

3±7

2N6836

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

±T±

SEATING

2. CONTROLLING DIMENSION: INCH.

PLANE

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO±204AA OUTLINE SHALL APPLY.

D 2 PL

INCHES

MILLIMETERS

0.13 (0.005) M

DIM

MIN

MAX

MIN

MAX

1.550 REF

39.37 REF

±Y±

±±±

1.050

±±±

26.67

0.250

0.335

6.35

8.51

0.038

0.043

0.97

1.09

0.055

0.070

1.40

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

±±±

0.830

±±±

21.08

0.13 (0.005) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 1±07

TO±204AA (TO±3)

ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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