MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11017/D
Complementary Darlington
Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.
•High dc Current Gain @ 10 Adc Ð h FE = 400 Min (All Types)
•Collector±Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) ± MJ11018, 17
VCEO(sus) = 250 Vdc (Min) ± MJ11022, 21
• Low Collector±Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
•Monolithic Construction
•100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
MAXIMUM RATINGS
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MJ11018 |
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MJ11022 |
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Rating |
Symbol |
MJ11017 |
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MJ11021 |
Unit |
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Collector±Emitter Voltage |
VCEO |
150 |
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250 |
Vdc |
Collector±Base Voltage |
VCB |
150 |
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250 |
Vdc |
Emitter±Base Voltage |
VEB |
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50 |
Vdc |
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Collector Current Ð |
IC |
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15 |
Adc |
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Continuous Peak |
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30 |
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Base Current |
IB |
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0.5 |
Adc |
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Total Device Dissipation @ TC = 25_C |
PD |
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175 |
Watts |
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Derate Above 25_C |
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1.16 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +175 |
_C |
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Temperature Range |
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± 65 to +200 |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
0.86 |
_C/W |
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle v 10%.
PNP
MJ11017
MJ11021*
NPN *
MJ11018
MJ11022
*Motorola Preferred Device
30 AMPERE
DARLINGTON
POWER TRANSISTORS COMPLEMENTARY SILICON
60 ± 120 VOLTS
200 WATTS
CASE 1±07 TO±204AA (TO±3)
(WATTS) |
200 |
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DISSIPATION |
150 |
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100 |
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,POWER |
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50 |
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D |
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P |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
MJ11017 |
MJ11021 |
MJ11018 |
MJ11022 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
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Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 0. 1 Adc, IB = 0) |
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MJ11017, MJ11018 |
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150 |
Ð |
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MJ11021, MJ11022 |
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250 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mAdc |
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(VCE = 75, IB = 0) |
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MJ11017, MJ11018 |
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Ð |
1.0 |
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(VCE = 125, IB = 0) |
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MJ11021, MJ11022 |
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Ð |
1.0 |
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Collector Cutoff Current |
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ICEV |
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mAdc |
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(VCE = Rated VCB, VBE(off) = 1.5 Vdc) |
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Ð |
0.5 |
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(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) |
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Ð |
5.0 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
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2.0 |
mAdc |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
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(IC = 10 Adc, VCE = 5.0 Vdc) |
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400 |
15,000 |
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(IC = 15 Adc, VCE = 5.0 Vdc) |
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100 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 10 Adc, IB = 100 mA) |
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Ð |
2.0 |
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(IC = 15 Adc, IB = 150 mA) |
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Ð |
3.4 |
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Base±Emitter On Voltage |
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VBE(on) |
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Ð |
2.8 |
Vdc |
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IC = 10 A, VCE = 5.0 Vdc) |
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Base±Emitter Saturation Voltage |
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VBE(sat) |
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3.8 |
Vdc |
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(IC = 15 Adc, IB = 150 mA) |
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DYNAMIC CHARACTERISTICS |
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Current±Gain Bandwidth Product |
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[hfe] |
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3.0 |
Ð |
Mhz |
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(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |
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Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
Cob |
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pF |
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MJ11018, MJ11022 |
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Ð |
400 |
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MJ11017, MJ11021 |
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Ð |
600 |
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Small±Signal Current Gain |
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hfe |
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75 |
Ð |
Ð |
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(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) |
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SWITCHING CHARACTERISTICS |
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Typical |
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Characteristic |
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Symbol |
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NPN |
PNP |
Unit |
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Delay Time |
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td |
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150 |
75 |
ns |
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Rise Time |
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(V |
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= 100 V, I = 10 A, I = 100 mA |
tr |
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1.2 |
0.5 |
μs |
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CC |
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C |
B |
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Storage Time |
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VBE(off) = 50 V) (See Figure 2.) |
t |
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4.4 |
2.7 |
μs |
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s |
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Fall Time |
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tf |
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10.0 |
2.5 |
μs |
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(1) Pulsed Test: Pulse Width = 300 μs, Duty Cycle v 2%. |
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RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
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VCC |
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D1 MUST BE FAST RECOVERY TYPE, e.g.: |
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100 V |
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1N5825 USED ABOVE I |
≈ 100 mA |
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RC |
SCOPE |
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B |
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MSD6100 USED BELOW IB ≈ 100 mA |
TUT |
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V2 |
RB |
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APPROX |
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+12 V |
D1 |
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51 |
≈ 10 K |
≈ 8.0 |
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0 |
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V1 |
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+ 4.0 V |
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APPROX |
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25 μs |
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± 8.0 |
V |
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for td and tr, D1 is disconnected |
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and V2 = 0 |
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tr, tf ≤ 10 ns |
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DUTY CYCLE = 1.0% |
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For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
2 |
Motorola Bipolar Power Transistor Device Data |
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MJ11017 |
MJ11021 |
MJ11018 |
MJ11022 |
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1.0 |
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EFFECTIVETRANSIENT THERMAL |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
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0.3 |
0.2 |
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0.2 |
0.1 |
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P(pk) |
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0.1 |
0.05 |
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RθJC(t) = r(t) RθJC |
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0.07 |
0.02 |
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RθJC(t) = 0.86°C/W MAX |
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0.05 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.01 |
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0.03 |
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READ TIME AT t1 |
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t2 |
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r(t), |
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0.02 |
SINGLE PULSE |
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TJ(pk) ± TC = P(pk) RθJC(t) |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
0.02 |
0.03 |
0.05 |
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0.2 |
0.3 |
0.5 |
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2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
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200 |
300 |
500 |
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0.01 |
1.0 |
1.0 |
100 |
1000 |
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t, TIME (ms)
Figure 3. Thermal Response
(AMPS) |
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5.0 ms |
1.0 ms |
0.5 ms |
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30 |
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0.1 ms |
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20 |
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CURRENT |
10 |
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dc |
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5.0 |
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3.0 |
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TJ = 175°C |
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COLLECTOR |
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2.0 |
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1.0 |
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SECOND BREAKDOWN LIMIT |
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BONDING WIRE LIMIT |
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0.5 |
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THERMAL LIMITATION @ TC = 25°C |
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, |
0.3 |
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SINGLE PULSE |
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C |
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I |
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MJ11017, 18 |
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0.2 |
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0 |
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MJ11021, 22 |
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3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
150200 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 4. Maximum Rated Forward Bias Safe
Operating Area (FBSOA)
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30 |
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(AMPS) |
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L = 200 μH |
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IC/IB1 ≥ |
50 |
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TC = 25°C |
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VBE(off) 0 ± 5.0 V |
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CURRENT |
20 |
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RBE = 47 Ω |
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DUTY CYLE = 10% |
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COLLECTOR |
10 |
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MJ11017, 18 |
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C |
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MJ11021, 22 |
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I |
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0 |
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0 |
20 |
60 |
100 |
140 |
180 |
220 |
260 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum RBSOA, Reverse Bias Safe
Operating Area
FORWARD BIAS
There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 175_C, TC is variable dependIng on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 175_C. TJ(pk) may be calculated from the data in Figure 3. At high case temperatures thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn±off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be hold to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage±current conditions during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives ROSOA characteristics.
Motorola Bipolar Power Transistor Device Data |
3 |
MJ11017 |
MJ11021 |
MJ11018 |
MJ11022 |
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PNP |
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NPN |
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10,000 |
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VCE = 5.0 Vdc |
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30,000 |
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7000 |
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20,000 |
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V |
= 5.0 Vdc |
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5000 |
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CE |
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TJ = 150°C |
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TJ = 150°C |
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GAIN |
3000 |
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GAIN |
10,000 |
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7000 |
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2000 |
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CURRENT |
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CURRENT |
5000 |
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TJ = 25°C |
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1000 |
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3000 |
TJ = 25°C |
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TJ = ± 55°C |
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700 |
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2000 |
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, DC |
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TJ = ± 55°C |
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, DC |
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500 |
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FE |
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FE |
1000 |
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h |
300 |
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h |
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700 |
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200 |
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500 |
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100 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
15 |
20 |
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300 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
15 |
20 |
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0.2 |
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0.2 |
||||||||||||||||||||||
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IC, COLLECTOR CURRENT (A) |
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IC, COLLECTOR CURRENT (A) |
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Figure 6. DC Current Gain
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PNP |
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(VOLTS) |
4.0 |
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I |
= 15 A |
° |
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3.5 |
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C |
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TJ = 25 C |
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VOLTAGE |
3.0 |
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IC = 10 A |
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IC = 5.0 A |
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, COLLECTOR±EMITTER |
2.5 |
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2.0 |
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1.5 |
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1.0 |
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CE |
0.5 |
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V |
2.0 3.0 |
5.0 7.0 10 |
20 |
30 |
50 70 100 |
200 300 |
500 |
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0.5 0.7 1.0 |
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IB, BASE CURRENT (mA) |
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NPN |
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(VOLTS) |
4.0 |
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I |
= 15 A |
° |
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3.5 |
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C |
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TJ = 25 C |
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VOLTAGE |
3.0 |
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IC = 10 A |
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IC = 5.0 A |
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, COLLECTOR±EMITTER |
2.5 |
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2.0 |
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1.5 |
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1.0 |
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CE |
0.5 |
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V |
2.0 3.0 |
5.0 7.0 10 |
20 |
30 |
50 70 100 |
200 300 |
500 |
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0.5 0.7 1.0 |
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IB, BASE CURRENT (mA) |
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|||
Figure 7. Collector Saturation Region
VOLTAGE (VOLTS)
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PNP |
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NPN |
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4.0 |
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4.0 |
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3.5 |
TJ = 25°C |
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3.5 |
TJ = 25°C |
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3.0 |
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3.0 |
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(VOLTS) |
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2.5 |
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2.5 |
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VOLTAGE |
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2.0 |
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2.0 |
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1.5 |
VBE(sat) @ IC/IB = 100 |
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1.5 |
VBE(sat) @ IC/IB = 100 |
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1.0 |
|
VBE @ VCE = 5.0 V |
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1.0 |
VBE |
@ VCE = 5.0 V |
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V |
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@ I /I |
= 100 |
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VCE(sat) @ IC/IB = 100 |
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||||||
0.5 |
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CE(sat) |
C B |
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0.5 |
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0.2 0.3 |
0.5 0.7 1.0 |
2.0 3.0 |
5.0 7.0 10 |
20 30 |
50 |
70 |
|
0.2 0.3 |
0.5 0.7 1.0 |
2.0 3.0 |
5.0 7.0 10 |
20 |
30 |
50 |
|||
0.1 |
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0.1 |
|||||||||||||||
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COLLECTOR CURRENT (AMPS) |
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COLLECTOR CURRENT (AMPS) |
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||||||
Figure 8. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
MJ11017 MJ11021 MJ11018 MJ11022
PACKAGE DIMENSIONS
|
A |
|
|
|
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N |
|
|
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|
|
|
NOTES: |
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C |
|
|
|
|
|
|
1. DIMENSIONING AND TOLERANCING PER ANSI |
||||
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Y14.5M, 1982. |
|
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||
|
|
±T± |
SEATING |
|
|
2. CONTROLLING DIMENSION: INCH. |
|
|||||
|
E |
|
|
PLANE |
|
|
3. ALL RULES AND NOTES ASSOCIATED WITH |
|||||
|
|
|
|
|
|
|
REFERENCED TO±204AA OUTLINE SHALL APPLY. |
|||||
|
D 2 PL |
K |
|
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|||||
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|
|
INCHES |
MILLIMETERS |
||||
|
|
|
|
|
|
|
|
|||||
|
0.13 (0.005) M |
T |
Q |
M |
Y |
M |
|
|||||
|
DIM |
MIN |
MAX |
MIN |
MAX |
|||||||
|
U |
|
|
|
|
|
|
A |
1.550 REF |
39.37 REF |
||
|
±Y± |
|
|
|
|
B |
±±± |
1.050 |
±±± |
26.67 |
||
V |
L |
|
|
|
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|||||||
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|
C |
0.250 |
0.335 |
6.35 |
8.51 |
||
|
2 |
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|
D |
0.038 |
0.043 |
0.97 |
1.09 |
|
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B |
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|
E |
0.055 |
0.070 |
1.40 |
1.77 |
|
H |
G |
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|
G |
0.430 BSC |
10.92 BSC |
|||
1 |
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H |
0.215 BSC |
5.46 BSC |
|||
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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|||||
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|
L |
0.665 BSC |
16.89 BSC |
||
|
±Q± |
|
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|
N |
±±± |
0.830 |
±±± |
21.08 |
|
0.13 (0.005) M |
T |
Y |
M |
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|
Q |
0.151 |
0.165 |
3.84 |
4.19 |
|
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|
U |
1.187 BSC |
30.15 BSC |
||||||
|
|
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|
V |
0.131 |
0.188 |
3.33 |
4.77 |
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|
STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
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|
||
CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |
MJ11017 MJ11021 MJ11018 MJ11022
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
|
USA / EUROPE: Motorola Literature Distribution; |
JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki, |
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 |
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◊ MJ11017/D
*MJ11017/D*