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2N6379RE

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6379/D

High-Power PNP Silicon

Transistors

. . . designed for use in industrial±military power amplifier and switching circuit applications.

• High Collector Emitter Sustaining Voltage Ð

VCEO(sus) = 120 Vdc (Min) Ð 2N6379

• High DC Current Gain Ð

hFE = 30±120 @ IC = 20 Adc

hFE = 10 (Min) @ IC = 50 Adc

• Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc

•Fast Switching Times @ IC = 20 Adc tr = 0.35μs (Max)

ts = 0.8 μs (Max) tf = 0.25 μs (Max)

•Complement to 2N6274±77

*MAXIMUM RATINGS

2N6379*

*Motorola Preferred Device

50 AMPERE

POWER TRANSISTORS

PNP SILICON

80, 100, 120 VOLTS

250 WATTS

CASE 197A±05

TO±204AE

(TO±3)

Rating	Symbol	Value	Unit

Collector±Base Voltage	VCB	140	Vdc
Collector±Emitter Voltage	VCEO	120	Vdc
Emitter±Base Voltage	VEB	6.0	Vdc
Collector Current Ð Continuous	IC	50	Adc
Peak		100

Base Current	IB	20	Adc
Total Device Dissipation @ TC = 25_C	PD	250	Watts
Derate above 25_C		1.43	W/_C

Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	θJC	0.7	_C/W

* Indicates JEDEC Registered Data.

	250
(WATTS)	200
(WATTS)
DISSIPATION	150
DISSIPATION	100
,POWER	100
,POWER	50
D	50
D
P
	0	25	50	75	100	125	150	175	200
	0	25	50	75	100	125	150	175	200
				TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

2N6379

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic				Symbol	Min	Max	Unit

*OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage(1)					V	120	Ð	Vdc
(IC = 50 mAdc, IB = 0)					CEO(sus)
(IC = 50 mAdc, IB = 0)
Collector Cutoff Current					ICEO	Ð	50	μAdc
(VCE = 70 Vdc, IB = 0)
Collector Cutoff Current					ICEX
(VCE = 90% Rated VCB, VBE(off) = 1.5 Vdc)						Ð	10	μAdc
(VCE = 90% Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)						Ð	1.0	mAdc
Emitter Cutoff Current					IEBO	Ð	100	μAdc
(VEB = 6.0 Vdc, IC = 0)
*ON CHARACTERISTICS(1)
DC Current Gain					hFE			Ð
(IC = 1.0 Adc, VCE = 4.0 Vdc)						50	Ð
(IC = 20 Adc, VCE = 4.0 Vdc)						30	120
(IC = 50 Adc, VCE = 4.0 Vdc)						10	Ð
Collector±Emitter Saturation Voltage					VCE(sat)	Ð		Vdc
(IC = 20 Adc, IB = 2.0 Adc)						Ð	1.2
(IC = 50 Adc, IB = 10 Adc)						Ð	3.0
Base±Emitter Saturation Voltage					VBE(sat)			Vdc
(IC = 20 Adc, IB = 2.0 Adc)						Ð	1.8
(IC = 50 Adc, IB = 10 Adc)						Ð	3.5
DYNAMIC CHARACTERISTICS

*Current±Gain Ð Bandwidth Product (2)					f	30	Ð	MHz
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)					T
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
*Output Capacitance					Cob	Ð	1500	pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
*SWITCHING CHARACTERISTICS (Figure 2)

Rise Time		(VCC = 80 Vdc, IC = 20 Adc,			tr	Ð	0.35	μs
Storage Time		(VCC = 80 Vdc, IC = 20 Adc,			ts	Ð	0.80	μs
Storage Time		I	= I	= 2.0 Adc)	ts	Ð	0.80	μs
		B1	B2
Fall Time					tf	Ð	0.25	μs
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%.				(2) fT = \|hfe\| •ftest

			VCC
			+ 80 V
			RC =
			4.0 OHMS
+ 19 V		RB =	SCOPE
0		10 OHMS
0
± 21 V	μs	MR850
30	μs	MR850

tr, tf v 10 ns

+ 4.0 V

DUTY CYCLE = 0.5%

NOTE: For information on Figures 3 & 6, RB and RC were varied to obtain desired test conditions.

Figure 2. Switching Time Test Circuit

2.0

IC/IB = 10

1.0 °

TJ = 25 C

0.7

0.5tr @ VCC = 80 V

(ns)	0.3
(ns)	0.3
TIMEt,	0.2
	0.2
	0.1
	0.1	td @ VBE(off) [ 5.0 V
	0.07
	0.07
	0.05
	0.05
	0.03
	0.03
	0.02
	0.02	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

EFFECTIVE TRANSIENT	RESISTANCE (NORMALIZED)
r(t),	THERMAL

2N6379

1.0
0.7	D = 0.5
0.5
0.3	0.2
0.2	0.1
	0.1							P(pk)
0.1	0.05							P(pk)			θJC(t) = r(t) θJC
0.07	0.02										θJC = 0.7°C/W MAX
0.07	0.02										D CURVES APPLY FOR POWER
0.05											D CURVES APPLY FOR POWER
0.05									t1		PULSE TRAIN SHOWN
0.03	0.01								t1	t2	PULSE TRAIN SHOWN
0.03	0.01									t2	READ TIME AT t1
0.02	SINGLE PULSE								DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) θJC(t)
									DUTY CYCLE, D = t1/t2
0.01	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1000	2000
0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1000	2000

t, TIME (ms)

Figure 4. Thermal Response

	100
	50
(AMP)	20						5.0 ms		1.0 ms		100 μs
	10				dc				1.0 ms		100 μs
	10				dc
CURRENT	5.0		°
		TJ = 200 C
	2.0
	1.0
, COLLECTOR	1.0
	0.5		SECOND BREAKDOWN LIMITED
	0.2		BONDING WIRE LIMITED
	0.1		THERMALLY LIMITED @ TC = 25°C
	0.05		(SINGLE PULSE)					2N6377
C	0.05		CURVES APPLY BELOW
I
	0.02							2N6378
			RATED VCEO					2N6378
			RATED VCEO					2N6379
	0.01	3.0	5.0	7.0	10	20	30	50	70	100	200
	2.0	3.0	5.0	7.0	10	20	30	50	70	100	200
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown.

t, TIME ( μs)

2.0															10,000
1.0										IB1	= IB2				7,000											TJ = 25°C
										IB1	= IB2				5,000											TJ = 25°C
					t					IC/IB = 10
					t					IC/IB = 10
					s
0.7										TJ = 25°C					3,000
0.7										TJ = 25°C					3,000								Cib
0.5														(pF)	2,000
0.5														(pF)
0.3														CAPACITANCE

																								C	ob

0.2															1,000
0.2															1,000
															700

0.1			tf @ VCC = 80			V

															500


0.07															300


0.05

															200

0.03
															100

0.02
0.02	0.7	1.0		2.0	3.0		5.0	7.0	10	20		30	50			0.2	0.3	0.5 0.7 1.0			2.0 3.0	5.0 7.0 10		20		30	50	70 100
0.5	0.7	1.0		2.0	3.0		5.0	7.0	10	20		30	50		0.1	0.2	0.3	0.5 0.7 1.0			2.0 3.0	5.0 7.0 10		20		30	50	70 100
				IC, COLLECTOR CURRENT (AMP)															VR, REVERSE VOLTAGE (VOLTS)
				Figure 6. Turn±Off Time																Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

2N6379											(VOLTS)
	200										(VOLTS)
	200
GAINCURRENT				TJ = + 150°C							VOLTAGE
GAINCURRENT	100										VOLTAGE
	100
	70			+ 25°C							COLLECTOR±EMITTER
h	50										COLLECTOR±EMITTER
	50
, DC	30			± 55°C
FE	30


	20			VCE	= 4.0 V
				VCE	= 4.0 V
				VCE	= 10 V						,
											CE
	10						7.0			30	V
	10	0.7	1.0	2.0	3.0	5.0		10	20		50
	0.5	0.7	1.0	2.0	3.0	5.0		10	20		50
				IC, COLLECTOR CURRENT (AMP)

4.0

TJ = 25°C

3.2

2.4

30 A

10 A

1.6

5.0 A

0.8

IC = 2.0 A

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (AMP)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

V, VOLTAGE (VOLTS)

2.8

2.4TJ = 25°C

2.0

1.6

1.2

VBE(sat) @ IC/IB = 10

0.8

VBE @ VCE = 4.0 V

0.4

VCE(sat) @ IC/IB = 10

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (AMP)

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+3.0

+2.0

+1.0

±1.0

±2.0

		*APPLIES FOR I				/I	t	hFE @ VCE			+	4.0	V
		*APPLIES FOR I				/I	t
					C B					4
					± 55°C to +25°C

					+ 25°C to +150°C
					+ 25°C to +150°C

			*θVC for VCE(sat)


				θVB for VBE

0.5	0.7		1.0	2.0			3.0		5.0	7.0	10			20	30	50
					IC, COLLECTOR CURRENT (AMP)

Figure 10. ªOnº Voltages

Figure 11. Temperature Coefficients

	1000
	500	VCE = 40 V
μA)	200	VCE = 40 V
	200

(	100
CURRENT	100	TJ = 150°C
	50	TJ = 150°C
	20
	10
COLLECTOR	10	100°C
	5.0	100°C
	5.0
	2.0	25°C
	1.0	25°C
,
C	0.5
I		REVERSE			FORWARD

	0.2
	0.2
	0.1+ 0.2	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut±Off Region

	100
	50	TJ = 150°C					VCE = 40 V
		TJ = 150°C
(μA)	20
(μA)	10
CURRENT	5.0	100°C
	5.0
	2.0
BASE	2.0
	1.0	25°C

,
B	0.5
I

	0.2	REVERSE			FORWARD
	0.2
	0.1+ 0.2	+ 0.1	0	± 0.1	± 0.2	± 0.3	± 0.4	± 0.5
		VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 13. Base Cutoff Region

4	Motorola Bipolar Power Transistor Device Data

2N6379

PACKAGE DIMENSIONS

±T±

SEATING

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

PLANE

Y14.5M, 1982.

D 2 PL

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

0.30 (0.012) M

DIM

MIN

MAX

MIN

MAX

1.530 REF

38.86 REF

±Y±

0.990

1.050

25.15

26.67

0.250

0.335

6.35

8.51

0.057

0.063

1.45

1.60

0.060

0.070

1.53

1.77

0.430 BSC

10.92 BSC

0.215 BSC

5.46 BSC

0.440

0.480

11.18

12.19

0.665 BSC

16.89 BSC

±Q±

0.760

0.830

19.31

21.08

0.25 (0.010) M

0.151

0.165

3.84

4.19

1.187 BSC

30.15 BSC

0.131

0.188

3.33

4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

CASE 197A±05

TO±204AE (TO±3)

ISSUE J

Motorola Bipolar Power Transistor Device Data

2N6379

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊

2N6379/D

*2N6379/D*

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